Abstract: A process for fabricating synthetic materials, such as "atomic ceramics", by atomic alloying of a host material. Energetic modifier elements or species are introduced into the host matrix of a fluidic precursor material so as to obtain an engineered material characterized by a range of optical electrical, thermal, chemical or mechanical properties not exhibited by either the modifier or the precursor material. In this manner modified, layered, graded, doped and/or alloyed materials may be synthesized. Special emphasis is placed on a novel technique for the synthesis of optical fibers.

Abstract: Disclosed is a method of testing ultra large area integrated circuits. The circuit has a plurality of individually addressable elements. The method comprises providing a dispersed chargeable powder with the integrated circuit in proximity to and above the powder. At least one device of the integrated circuit is electrically selected. An electrical potential is applied between the integrated circuit and the dispersed powder. The potential causes the chargeable particles to adhere to substantially only functional selected devices of the integrated circuit, thereby differentiating between functional and non-functional devices.

Abstract: The production of improved multiple cell photovoltaic amorphous silicon devices having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the silicon alloy material in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of constituent amorphous silicon cells, which regions preferably further include at least one of fluorine and hydrogen. One adjusting element is germanium which narrows the band gap from that of the silicon alloy materials without the adjusting element incorporated thereinto. Other adjusting elements can be used, such as carbon or nitrogen to widen the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous silicon alloys by glow discharge decomposition techniques.

Abstract: A method for the preparation of a highly alloyed metal hydride, hydrogen storage alloy material including titanium, zirconium, vanadium, nickel and chromium. The hydrogen storage alloy material is prepared by vacuum induction melting electrochemically operative amounts of the materials in a nigh density, high purity graphite crucible, under an inert gas atmosphere.

Abstract: A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Abstract: A window assembly for transmitting relatively high power microwave energy from a waveguide, held at substantially atmospheric pressure levels, into a microwave reaction chamber at sub-atmospheric pressure levels. The window assembly provides for the transmission of microwave energy to generate a glow discharge plasma without suffering from catastrophic failure as a result of excessive temperature and pressure conditions.

Abstract: A method and apparatus for direct, single beam, overwrite of new data over existing data in a phase change optical data storage device are disclosed. This eliminates the need for an intermediate erase step.

Abstract: An improved method for the continuous fabrication of metal-hydride, electrochemical, hydrogen storage alloy, negative electrodes for use in rechargeable nickel metal hydride cells. The improved method comprises the steps of reducing the size of a high hardness, metal hydride, hydrogen storage alloy by shattering it along natural fracture line thereof. The process next includes providing measured amounts of powered metal hydride electrochemical hydrogen storage alloy material and disposing said material upon a continuous wire mesh screen substrate. Thereafter, the powdered metal hydride electrochemical hydrogen storage alloy and wire mesh screen are subjected to a compaction process wherein they are rolled and pressed so as to form a single integral electrode web which is subsequently exposed to a high temperature sintering process in a chemically inert environment.

Abstract: A copying system which includes the combination of a digitizing unit formed of an array of thin film photosensitive elements adapted to generate electrical signals indicative of a detectible image on an image-bearing surface and a replicating unit responsive to the photogenerated electrical signals for reproducing one or more hard copies of that detectible image.

Abstract: Apparatus for the hydride-dehydride cycling comminution of metal hydride, hydrogen storage alloy materials, which comminuted hydrogen storage alloy material is adapted for use in the negative electrode of hydrogen storage, electrochemical cells.

Abstract: Microwave energy apparatus adapted to sustain a substantially uniform plasma over a relatively large area. In the broadest form of the invention, an isolating window is disposed about the microwave applicator, said isolating window formed from a material through which the microwave energy can be transmitted from the applicator into a plasma reaction vessel and said isolating window configured in a shape which is substantially optimized to withstand compressive forces. In this manner, the thickness of the isolating window may be minimized to provide for rapid thermal cooling, wherby high power densities may be achieved without cracking the window.

Abstract: A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

Abstract: The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous cells containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as carbon or nitrogen to increase the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Abstract: Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of each may be substantially intrinsic or lightly doped. One or more control electrodes or gates located adjacent to each current path project a variable electric field over the ambipolar path, which modulates current by controlling the amount of charge carriers of both polarities injected into the semiconductor body. In most of the single gate embodiments, the electrodes extend across a portion, preferably a major portion such as 75% or 90%, or the length of the current path, but not the entire length of the current path. The embodiments having a plurality of gates typically have two insulated gates, one extending from the anode electrode and the other extending from the cathode electrode. The gates in a single device may overlap.

Abstract: Disclosed is an optical data storage device having a reversible, phase change data storage medium formed of (Sb.sub.2 Te.sub.3).sub.1-x (Sb.sub.2 Se.sub.3).sub.x, where x is from 0.18 to 0.43.

Abstract: Apparatus for the photogeneration of electrical signals representative of a detectable condition of an image-bearing surface. The apparatus includes a transparent substrate upon which an array of spaced, thin film photosensitive elements is deposited. A substantially loss-free, light transmitting faceplate, preferably formed from a fused array of oriented optical fibers is operatively spaced from that array of photosensitive elements by a layer of optical grease.

Abstract: A liquid crystal display electronic matrix array has first and second diodes connected together with the cathode of the first diode electrically connected to the anode of the second diode. The diodes are connected between substantially parallel address leads with the anode of the first diode connected to one of the address leads. The anode of the other diode connects to the other of the address leads. The diodes have a PIN structure of amorphous silicon alloy material.

Abstract: An electronic camera system, which system comprises the combination of an image digitizer media and a digital signal storage media. The camera includes an x-y matrix formed of a thin film photosensor array of small area photosensitive elements capable of providing high resolution digitized electrical signal corresponding to an image projected thereon. The storage media is preferably formed as a layer of phase change optical memory material deposited upon an elongated tape or disc-like number and disposed in a cartridge-like housing which is removably positioned in the camera adjacent a writing mechanism such as a multi-headed laser. By utilizing multiple lasers, it is possible to simultaneously write on the entire width of the tape or disc for increasing processing speed.