Abstract: Described is a polyethylene membrane and in particular an ultra-high molecular weight polyethylene member that provides a high air permeability and is hydrophobic. The membranes have small pores and are suitable for sterilization by exposure to gamma radiation. The membranes can be made by methods that involve one or more of stretching the membrane and grafting hydrophobic monomers onto the membrane surface. A perfluorinated monomer, such as perfluoro-n-octyl acrylate, can be grafted to one or more surfaces of the membrane. The membrane have a high flow rate compared to unstretched or ungrafted membranes.

Abstract: The invention is directed to a configurable vaporizer or ampoule assembly that uses a configurable vessel body, assembled from one or more support tray modules with their own individual heating assemblies or heater members, bounded by a base member and a lid member to form the whole ampoule. This eliminates the need for the prior art ampoule body that normally holds the support trays and was used to heat each of the support trays from the exterior surface using heating jackets or the like.

Abstract: The invention provides a removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and ceria particles from a microelectronic device having said particles and contaminants thereon. The composition achieves highly efficacious removal of the ceria particles and CMP by-product contaminant material from the surface of the microelectronic device.

Abstract: A method of CMP includes providing a slurry solution including ?1 per-compound oxidizer in a concentration between 0.01 M and 2 M with a pH from 2 to 5 or 8 to 11, and ?1 buffering agent which provides a buffering ratio ?1.5 that compares an amount of a strong acid needed to reduce the pH from 9.0 to 3.0 as compared to an amount of strong acid to change the pH from 9.0 to 3.0 without the buffering agent. The slurry solution is exclusive any hard slurry particles or has only soft slurry particles that have throughout a Vickers hardness <300 Kg/mm2 or Mohs Hardness <4. The slurry solution is dispensed on a hard surface having a Vickers hardness >1,000 kg/mm2 is pressed by a polishing pad with the slurry solution in between while rotating the polishing pad relative to the hard surface.

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Abstract: Described are bulk process gas purification systems and related methods, including systems that are adapted to use a volume of gas at an exterior surface of a vessel, e.g., a flow of the gas, to control a temperature of the vessel interior during a recharging step, during a cooling step that follows a recharging step, or both.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: Described are boron-doped amorphous carbon hard masks, methods of preparing boron-doped amorphous carbon hard masks, methods of using the boron-doped amorphous carbon hard masks, and devices that include the boron-doped amorphous carbon hard masks.

Abstract: A solid delivery precursor is described, which is useful for volatilization to generate precursor vapor for a vapor deposition process. The solid delivery precursor comprises solid bodies of compacted particulate precursor, e.g., in a form such as pellets, platelets, tablets, beads, discs, or monoliths. When utilized in a vapor deposition process such as chemical vapor deposition, pulsed chemical vapor deposition, or atomic layer deposition, the solid delivery precursor in the form of solid bodies of compacted particulate precursor provide substantially increased flux of precursor vapor when subjected to volatilization conditions, in relation to the particulate precursor. As a result, vapor deposition process operation can be carried out in shorter periods of time, thereby achieving increased manufacturing rates of products such as semiconductor products, flat-panel displays, solar panels, LEDs, optical coatings, and the like.

Abstract: System and method for removing molecular contaminants from an air stream are disclosed. The system includes first, second and third filter. The first filter removes organic contaminants from an air stream passing through the first filter. The second filter is downstream of the first filter, is physically and chemically exchangeable with the first filter and removes organic contaminants from the air stream output of the first filter. The third filter, downstream of the second filter, is not exchangeable with the first filter or the second filter. The first position filter can be replaced by the second filter in the second position when the first filter in the first position becomes depleted as detected. A new filter in the second filter position is inserted. Replacing the depleted first filter with the second downstream filter reduces costs and waste while inserting the new filter in the second position ensures removing organic contaminants.

Abstract: A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.

Abstract: Filters for semiconductor tool and clean room applications to control airborne molecular contamination. The filter cartridge system includes a filter cartridge having a non-woven fiber and at least one adsorbent. In some embodiments, the filter cartridge is constructed of substantially combustible materials to support its end of service destruction.

Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

Abstract: A removal composition and process for selectively removing p-doped polysilicon (e.g., boron-doped polysilicon) relative to silicon nitride from a microelectronic device having said material thereon. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract: A thermoplastic blended potting resin, a blended resin potted membrane, a membrane separation module, a fluid separation device, a method of making and a method of using the membrane separation module and the fluid separation device are described herein. The blended thermoplastic potting resin comprises at least one polar membrane having two end regions and a middle region; and a blended resin comprising a non-polar thermoplastic polymer and a polar thermoplastic polymer; wherein at least one of the two ends regions is coated with the blended potting resin to form a fluid-tight seal between the end regions and the open middle region, and wherein the polar thermoplastic polymer is 1% or greater by weight of blended resin.

Abstract: Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a portion of the substrate. The film comprises a fluorinated metal oxide containing yttrium.

Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

Abstract: Microporous polyamide-imide membranes and methods for making them are disclosed. The microporous membrane includes polyamide-imide polymer, wherein the membrane has an HFE bubble point, and an IPA flow-time. The microporous membrane has an HFE bubble point from about 25 psi to about 200 psi and has an IPA flow-time from about 400 second to about 40,000 seconds. Another microporous polyamide-imide membrane includes a polyamide-imide polymer, wherein the membrane has a HFE bubble point from about 25 psi to about 200 psi. The membrane is asymmetric- and has a tight layer with a thickness of ?10 microns. Filter and purification devices incorporating such devices are also disclosed.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.