Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

Abstract: Described are silicon carbide filters for use with liquid metals such as liquid tin, as well as methods of using such a filter to remove particles from the liquid metal, and systems and processes that use the filtered liquid metal.

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract: A wafer shipper utilizing wafer support rings for supporting individual wafers therein. The wafer support rings can support wafers of various thicknesses without affecting the height of the stack, and provide containment of the resident wafers within the rings during an impact event. The wafers and the rings cooperate to define voids between the wafers that act as cushions in an impact event for dampening the shock imparted on the wafers during an impact event. Likewise, some embodiments include structure that defines enclosed gas pockets between the uppermost and the lowermost wafers of the stack for dampening the effects of an impact. Various embodiments include structure that prevents wafers from “jumping” out of the wafer support rings during an impact event. Some embodiments include structure for supporting wafer flats.

Abstract: The invention is directed to a vaporizer or ampoule assembly with improved heat transfer between a vaporizer vessel body and at least one support tray located therein. In particular, there is provided a heat transfer enhancing member that is disposed between a vessel body and support tray. In one example of a heat transfer enhancing member or assembly there is included a heat conductive mesh or liner around totally or partially around the support tray that is wedged in between the support tray and the interior diameter or wall of the vessel body. In a related embodiment, the heat transfer enhancing member includes an expandable support tray sidewall to increase physical contact between the support tray and the vessel body interior wall.

Abstract: An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

Abstract: Described are glass-forming molds made of a graphite mold body and a coating formed by atomic layer deposition, with the coating being made of alumina or a combination of alumina and yttria.

Abstract: A substrate retainer (110) is provided which presents a substantially uniform contact face (128) that can accommodate a large variation in the location of substrate registration thereon. The uniform contact face (128) is allowed to deflect and compress in order to eliminates the prospect of substrates (114) being damaged by or becoming inadvertently pinched within the substrate retainer (110) or from being pressed too hard by the uniform contact face (128). With this arrangement, no adhesives or tapes are utilized, so there is no attendant out gassing of volatile organic compounds to contaminate the microenvironment, or complications due to incompatibility of such adhesives and tapes with washing processes.

Abstract: An organotitanium compound selected from the group consisting of: (i) organotitanium compounds of Formulae (I): wherein: each of R0, R1 and R2 is the same as or different from the others, and each is independently selected from organo substituents containing olefinic or alkynyl unsaturation; and each of R3, R4, R5, R6, and R7 is the same as or different from the others, and each is independently selected from H, C1-C12 alkyl, and substituents containing olefinic or alkynyl unsaturation; (ii) organotitanium compounds including at least one tris(alkylaminoalkyl)amine ligand and at least one dialkylamine ligand, wherein alkyl is C1-C6 alkyl; and (iii) organotitanium compounds including a cyclopentadienyl ligand, and a cyclic dienyl or trienyl ligand other than cyclopentadienyl Such organotitanium compounds are usefully employed in vapor deposition processes for depositing titanium on substrates, e.g., in the manufacture of microelectronic devices and microelectronic device precursor structures.

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C?CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

Abstract: A method to provide compressive stress to substrates includes depositing a film on a ceramic substrate at a deposition temperature (Td) to form an article, the film having a difference relative to the ceramic substrate at Td in a coefficient thermal expansion (CTE) of at least 1.0×10?6/K and a difference in a refractive index >0.10. At least a portion of the thickness the film is converted in at least one of composition, phase and microstructure by lowering or raising the temperature from Td to reach a changed temperature (Tc) that is at least 100° C. different from Td. The film converting conditions result in the converted film portion providing a difference in refractive index at the Tc between the converted film and the ceramic substrate of ?|0.10|. The temperature of the article is then lowered to room temperature.

Abstract: A bottom opening pod utilizing magnetic coupling for securing one or more cassettes within. The pod includes magnetic couplers that provide magnetic coupling between the cassette(s) and the bottom door of the pod. The magnetic couplers may include magnetic elements disposed on a base of the cassette and on the bottom door of the pod. The magnetic coupling secures the cassette(s) to the bottom door without imposition of separation forces between the housing and the bottom door of the pod.

Abstract: A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.

Abstract: A fluorine plasma resistant coating on a substrate being a component in a semiconductor manufacturing system is disclosed. In one embodiment the composition includes an AlON coating that overlies a substrate, and an optional yttria coating layer that overlies the AlON coating, with a total coating thickness of about 5-6 microns.

Abstract: A gas supply vessel for storing and dispensing a reagent gas including a filter such that the vessel is capable of delivering the reagent gas, after it is filtered, at a high level of purity. The filter includes a porous sintered body and is effective to provide a desired level of purity of a supplied reagent gas by flowing the reagent gas through the filter during delivery from the vessel at a low pressure, at a relatively low flow rate, and with a relatively low pressure drop across the filter.

Abstract: Grafted, asymmetric, porous, ultra high molecular weight polyethylene membranes having a bubble point between about 5.38 bar (78 psi) and 11.03 bar (160 psi) are disclosed. Monomers are grafted to the porous polymeric membrane surfaces, the monomers having one or more of neutral groups or ion exchange groups grafted to one or more surfaces of the membrane. A combination of two photoinitiators can be used to graft the monomers to the asymmetric, porous, ultra high molecular weight membrane resulting in grafted microporous membranes that have water flow rates that are at least 50% of the water flow rate of an ungrafted, asymmetric, porous ultra high molecular weight polyethylene membrane. The grafted membrane also wets in water.

Abstract: A deposited cobalt composition is described, including cobalt and one or more alloy component that is effective in combination with cobalt to enhance adhesion to a substrate when exposed on the substrate to variable temperature and/or delaminative force conditions, as compared to corresponding elemental cobalt, wherein the one or more alloy component is selected from the group consisting of boron, phosphorous, tin, antimony, indium, and gold. Such deposited cobalt composition may be employed for metallization in semiconductor devices and device precursor structures, flat-panel displays, and solar panels, and provides highly adherent metallization when the metallized substrate is subjected to thermal cycling and/or chemical mechanical planarization operations in the manufacturing of the semiconductor, flat-panel display, or solar panel product.

Abstract: A foam brush that has nodules on an outer diameter surface of the brush that have a pitch to diameter ratio (P/D) of between 1.2 and 1.5 and a nodule height to nodule diameter ratio of 0.2 to 0.5 can be used to achieve improved small particle and organic residue removal from substrates following CMP processing. CMP cleaning brushes of the disclosure may also be prepared with foams that are relatively soft and have a compression strength of less than 90 grams/cm2. CMP cleaning brushes with such P/D and H/D ratios, and optionally a compression strength of less than 90 grams/cm2 can be used in a variety of CMP cleaning processes including post copper CMP processes.

Abstract: High-purity gas purifiers for purification of corrosive gases, such as halogen gases or halide gases, and noncorrosive gases, such as hydrogen and inert gases, methods of making and methods of using the gas purifiers, are described. The gas purifier includes a housing made of nickel or stainless steel. Within the housing, the gas purifier includes a purifier resin, including a modifi-er coated onto a substrate. The gas purifier further includes porous nickel membranes located at the inlets and outlets of the device. The inlets and outlets are capable of fluid communication with external fixtures.

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.