Abstract: A method of preparing a non-conductive substrate to allow metal plating thereon. The method includes the steps of a) contacting the non-conductive substrate with a conditioner comprising a conditioning agent; b) applying a carbon-based dispersion to the conditioned substrate, wherein the carbon-based dispersion comprises carbon or graphite particles dispersed in a liquid solution; and c) etching the non-conductive substrate. The etching step is performed before the liquid carbon-based dispersion dries on the non-conductive substrate.

Abstract: A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.

Abstract: Textured hardcoat films are disclosed for preferable use in film insert moulding. Texture in the hardcoat film is created through the use of a textured protective overlayer, which can impart texture to the curable coating of the hardcoat film. This process preferably avoids the need to alter the composition of the curable coating to allow for texture and preferably produces a hardcoat film with a matte and reduced-glare finish. An apparatus and a method embodying the invention are disclosed.

Abstract: Upon use of an immersion tin plating solution, contaminants build in the solution, which cause the plating rate and the quality of the plated deposit to decrease. One primary contaminant, which builds in the plating solution upon use, is hydrogen sulfide, H2S. If a gas is bubbled or blown through the solution, contaminants, especially hydrogen sulfide, can be effectively removed from the solution and, as a result, the high plating rate and plate quality can be restored or maintained. In this regard, any gas can be used, however, it is preferable to use a gas that will not detrimentally interact with the solution, other than to strip out contaminants. Nitrogen is particularly preferred for this purpose because it is efficient at stripping out contaminants, including hydrogen sulfide, but does not induce the oxidation of the tin ions from their divalent state to the tetravalent state, which is detrimental.

Abstract: The invention relates to a method for the adjustment of the lightness L* of electrolytically deposited chromium-finishes on workpieces obtained by an electroplating bath comprising at least chromium(III)-ions and sulfur containing organic compounds, wherein the concentration of the sulfur containing organic compounds in the bath are adjusted by passing at least part of the bath composition through an activated carbon filter. Furthermore, the invention is directed to dark chrome coatings comprising a defined concentration gradient of deposited sulfur containing organic compounds.

Abstract: The invention relates to a method for the adjustment of the lightness L* of electrolytically deposited chromium-finishes on workpieces obtained by an electroplating bath comprising at least chromium(III)-ions and sulfur containing organic compounds, wherein the concentration of the sulfur containing organic compounds in the bath are adjusted by passing at least part of the bath composition through an activated carbon filter. Furthermore, the invention is directed to dark chrome coatings comprising a defined concentration gradient of deposited sulfur containing organic compounds.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate.

Abstract: The invention relates to a composition and a process for the deposition of conductive polymers on dielectric substrates. In particular, the invention relates to a composition for the formation of electrically conductive polymers on the surface of a dielectric substrate, the composition comprising at least one polymerizable monomer which is capable to form a conductive polymer, an emulsifier and an acid, characterized in that the composition comprises at least one metal-ion selected from the group consisting of lithium-ions, sodium-ions, aluminum-ions, beryllium-ions, bismuth-ions, boron-ions, indium-ions and alkyl imidazolium-ions. The acid is typically a high molecular weight polymeric acid having molecular weight of at least 500,000 Da including, for example, polystyrene sulfonic acid having a molecular weight of approximately 1,000,000 Da.

Abstract: A near neutral pH pickling composition for the removal of oxides from metallic surfaces, including heat treated steel. The pickling composition comprises a) a water-soluble organic or inorganic nitro compound, wherein a central N atom has an oxidation state of 3+; b) a polarizing agent for the nitro compound, wherein the polarizing agent comprises at least one of a phosphonate and a carboxylate; c) a pH buffer, and d) at least one metal complexing agent. The composition is preferably maintained at a pH between about 4.5 and about 7.5. The near neutral pH pickle composition can be used on various metallic surfaces as well as composite surfaces comprising metallic and non-metallic portions.

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.

Abstract: The present invention relates to the use of water soluble and air stable phosphaadamantanes as stabilizers in electrolytes for electroless metal deposition. An electrolyte, as well as a method for the electroless deposition of metals is disclosed. The plated metal layers can comprise nickel, copper, cobalt, boron, silver, palladium or gold, as well as alloys comprising at least one of the aforementioned metals as an alloying metal. The present invention further relates to an organic stabilizer for electroless plating processes, and an electrolyte for the electroless deposition of a metal layer on a substrate, comprising a metal ion source for the metal to be deposited, a reducing agent, a complexing agent, a stabilizer and preferably an accelerator. A method for the electroless deposition of a metal layer on a surface from an electrolyte according to the invention is also disclosed.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: An aqueous electrolyte for the deposition of a metal layer on a substrate surface as well as a method for the deposition of a metal layer on a substrate surface by which electrolyte and in which method the formation of airborne emissions above the surface of the electrolyte in a plating tank is significantly reduced or more preferably omitted. The aqueous electrolyte composition according to the invention comprises at least one surfactant in a concentration affecting a dynamic surface tension of the composition of ?35 mN/m.

Abstract: Compositions and methods for enhancing adhesion between a copper conducting layer and a dielectric material during manufacture of a printed circuit board. Conditioning compositions contain a functional organic compound and preferably a transition metal ion. The functional organic compound, e.g., a purine derivative, is capable of forming a self-assembled monolayer. Adhesion promoting compositions contain an acid, preferably an inorganic acid, and an oxidant. The latter compositions may also contain a corrosion inhibitor and/or a transition metal ion selected from among Zn, Ni, Co, Cu, Ag, Au, Pd or another Pt group metal. The corrosion inhibitor may comprise a nitrogen-containing aromatic heterocyclic compound.

Abstract: The invention relates to a cyanide-free electrolyte composition for depositing a silver or silver alloy layer on a substrate as well as a method for depositing such layers with the help of said cyanide-free electrolyte composition. The electrolyte composition according to the invention comprises at least one silver ion source, a sulfonic acid and/or a sulfonic acid derivative, a wetting agent and a hydantoin. The silver or silver alloy layers deposited from such an electrolyte composition by means of the method according to the invention are dull and ductile.

Abstract: The invention relates to an aqueous stripping composition for the removal of polymeric surface sealants on metal surfaces, said stripping composition comprising an alkalizing agent, a polymer splitting agent, a swelling agent, and a cloud point booster, wherein said polymer splitting agent is at least one gluconate wherein said swelling agent is at least one compound selected from the group consisting of glycol ethers and aliphatic alcohols having 3 to 9 carbon atoms. The inventive aqueous stripping composition is capable to remove polymeric sealants like e.g. polyurethane sealants, polyethylene sealants, polyethylene waxes, polyacrylic sealants, polysilicate sealants, and the like.

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.