Abstract: A data processing system having a first processor, a second processor, a local memory of the second processor, and a built-in self-test (BIST) controller of the second processor which can be randomly enabled to perform memory accesses on the local memory of the second processor and which includes a random value generator is provided. The system can perform a method including executing a secure code sequence by the first processor and performing, by the BIST controller of the second processor, BIST memory accesses to the local memory of the second processor in response to the random value generator. Performing the BIST memory accesses is performed concurrently with executing the secure code sequence.

Abstract: A microelectromechanical systems (MEMS) die includes a substrate having a recess formed therein and a cantilevered platform structure. The cantilevered platform structure has a platform and an arm extending from the platform, wherein the platform and arm are suspended over the recess. The arm is fixed to the substrate and is a sole attachment point of the platform to the substrate. A MEMS device resides on the platform. Fabrication methodology entails forming the recess in the substrate, with the recess extending inwardly from a surface of the substrate, and attaching a structural layer over the recess and over the surface of the substrate. The MEMS device is formed on the structural layer and the structural layer is removed around a perimeter of the platform and the arm to form the cantilevered platform structure.

Abstract: Piggy-back snoops are used for non-coherent memory transactions in distributed processing systems. Coherent and non-coherent memory transactions are received from a plurality of processing cores within a distributed processing system. Non-coherent snoop information for the non-coherent memory transactions is combined with coherent snoop information for the coherent memory transactions to form expanded snoop messages. The expanded snoop messages are then output to a snoop bus interconnect during snoop cycles for the distributed processing system. As such, when the processing cores monitor the snoop bus interconnect, the processing cores receive the non-coherent snoop information along with coherent snoop information within the same snoop cycle. While this piggy-backing of non-coherent snoop information with coherent snoop information uses an expanded snoop bus interconnect, usage of the coherent snoop bandwidth is significantly reduced thereby improving overall performance of the distributed processing system.

Abstract: A method includes over-programming thin film storage (TFS) memory cells on a semiconductor wafer with a first voltage that is higher than a highest voltage used to program the memory cells during normal operation of the memory cells. With the memory cells in an over-programmed state, the wafer is exposed to a first temperature above a product specification temperature for a period of time sufficient to induce redistribution of charge among storage elements in the memory cells.

Abstract: An integrated circuit device includes a cut-through forwarding module. The cut-through forwarding module includes at least one receiver component arranged to receive data to be forwarded, and at least one transmitter component arranged to transmit data stored within at least one transmitter buffer thereof. The cut-through forwarding module further includes at least one delimiter component arranged to trigger a transmission of frame data within the at least one transmitter buffer, upon receipt of a first number elements of a respective data frame by the at least one receiver component, the first number of data elements comprising a first predefined integer value.

Abstract: A system and method of accelerating sparse matrix operations in full accuracy simulation of a circuit includes determining repetitive blocks of the circuit, determining a set of values of a current block, determining whether the state of the current block is sufficiently close to the state of a stored block solution when the corresponding values are within a predetermined error range, and performing a reduced computation using the stored block solution to provide a solution for the current block when the states are sufficiently close to each other. The reduced computation includes retrieving previously stored solutions and performing substantially simplified matrix and vector operations while maintaining accuracy of the solution. Reduced precision versions of the values may be used to generate a hash index used to store the block solutions. Stored redundant device information may also be used to simplify device solutions in a similar manner.

Abstract: A system and method for packaging a semiconductor device that includes a wall to reduce electromagnetic coupling is presented. A semiconductor device has a substrate on which a first circuit and a second circuit are formed proximate to each other. An isolation wall of electrically conductive material is located between the first circuit and the second circuit, the isolation wall being configured to reduce inductive coupling between the first and second circuits during an operation of the semiconductor device. Several types of isolation walls are presented.

Abstract: A packaged integrated circuit (IC) device having a heatsink mounted onto an IC die, itself mounted onto a die pad, is assembled using a lead frame having tie bars that deflect during an encapsulation phase of the device assembly, which enables the die pad, the die, and the heatsink to move relative to the lead frame support structure when compressive force is applied by the molding tool. This movement results in negligible relative displacement between the heatsink and the die during encapsulation, which reduces the probability of physical damage to the die. Each tie bar has a number of differently angled sections that enable it to deflect when compressive force is applied to it.

Abstract: A memory circuit has control gate circuitry (104) and select gate circuitry (106). A first memory cell (122/124) has a control gate coupled to the control gate circuitry, a select gate coupled to the select gate circuitry, a drain that is coupled to a first bit line for reading a logic state of the of the first memory cell, and a source. A second memory cell (150/152 or 158/160) having a control gate coupled to the control gate circuitry, a select gate coupled to the select gate circuitry, a drain that is coupled to a second bit line for reading a logic state of the of the second memory cell, and a source. A source control circuit (102) that, during programming of the first memory cell, outputs a first voltage to the source of the first memory cell and keeps the source of the second memory cell floating.

Abstract: There is provided an energy consumption meter device (1) comprising the processor (8) arranged to receive input data from the sampling unit. The processor calculates at a calculation step [n] an energy contribution value using ?E using a sampled voltage value and a sampled current value. The processor will calculate an energy value E[n] using a reminder value which was calculated at a previous calculation step [n?1]. The processor will then calculate a relative delay Td? using the threshold value, the reminder value and the energy value, and generate an output pulse at an output time tpulse which is delayed for the relative delay Td? with respect to the calculation time step[n]. By delaying the output pulse with a value which is a closest proximity of Td, the cycle-by-cycle jitter is less or equal to the clock frequency of the timer tclk.

Abstract: The embodiments described herein provide a radar device and method that can provide improved sensitivity. In general, the embodiments described herein provide a saturation detector and reset mechanism coupled to a radar receiver. The saturation detector is configured to detect saturation events in the radar receiver, and the reset mechanism is configured to reset at least one filter unit in the radar receiver in response to detected saturation events. As such, the embodiments can facilitate improved radar sensitivity by reducing the effects of saturation events in the radar receiver.

Abstract: Tooling for molding a packaged semiconductor device includes a clamping plate, a cavity bar, and an attachment mechanism. The cavity bar has a mold half that has a mold cavity for molding the packaged semiconductor device. The mold half has teeth and a space between pairs of adjacent teeth. The teeth and the spaces support bending of leads of a lead frame of the packaged semiconductor device. The attachment mechanism affixes the cavity bar to the clamping plate and permits the cavity bar to slide relative to the clamping plate. This sliding of the cavity bar enables proper alignment with a mating cavity bar to reduce the likelihood of resin bleed.

Abstract: A method and apparatus for storing trace data within a processing system. The method includes configuring at least one Error Correction Code, ECC, component within the processing system to operate in a trace data storage operating mode, generating trace data at a debug module of the processing system, and conveying the trace data from the debug module to the at least one ECC component for storing in an area of memory used for ECC information.

Abstract: A semiconductor device includes a substrate, a dielectric layer supported by the substrate, an interconnect adjacent the dielectric layer, the interconnect including a conduction material and a barrier material disposed along sidewalls of the interconnect between the conduction material and the dielectric layer, and a layer disposed over the interconnect to establish an interface between the conduction material, the barrier material, and the layer. A plate is disposed along a section of the interconnect to interrupt the interface.

Abstract: A method and circuit for a data processing system (20) provide a processor-based partitioned priority blocking mechanism by storing priority levels and associated partition information in special purpose registers (27-29) located at the processor core (26) to enable quick and efficient interrupt priority blocking on a partition basis.

Abstract: A method for protecting terminal elements on a wafer during wafer level fabrication processes entails applying a protective coating to the terminal elements prior to further processing operations. These processing operations may include back side grinding of the wafer and/or saw-to-reveal operations to expose the terminal elements from a cap wafer of a wafer structure. The protective coating can protect the terminal elements from potentially damaging contaminants, such as debris from the grinding or saw-to-reveal operations. Furthermore, the protective coating can protect the bond pads from coming into contact with a rapidly oxidizing environment when exposed to water. The protective coating may be a hot-water soluble thermoplastic material the melts from a solid form to a liquid form at a relatively low temperature to enable application of the protective coating in liquid form onto the terminal elements and clean removal of the protective coating from the terminal elements.

Abstract: An amplifier system includes a low offset amplifier having a first signal input, a second signal input, an output, a resistive digital to analog converter (RDAC) coupled between a first amplifying terminal and a second amplifying terminal of the amplifier that provides offset control, and a current supply coupled to the RDAC. The amplifier system further includes a low offset amplifier having a first signal input, a second signal input, an output, a resistive digital to analog converter coupled between a first amplifying terminal and a second amplifying terminal of the amplifier that provides offset control, and a current supply coupled to the RDAC. The amplifier system also further includes a load coupled to the output and to the second input of the amplifier and a controller coupled to the RDAC that provides an offset control of the first and second inputs by controlling the RDAC.

Abstract: A semiconductor device including a voltage regulator is disclosed. The voltage regulator may include a multipath amplifier stage, a driver stage coupled to the multipath amplifier stage, a dynamic compensation circuit coupled to the multipath amplifier stage, and a current compensation circuit. The dynamic compensation circuit may be operable to provide a varying level of compensation to the multipath amplifier stage, where the varying level of compensation proportional to a current level associated with the load; and the current compensation circuit may be operable to allow a minimum current level at the driver stage.

Abstract: A receiver system includes a DC (direct current) offset estimation block configured to capture a plurality of sample pairs, each sample pair including a first sample of a first signal and a second sample of a second signal. The first and second signals are passed through one or more gain elements. The DC offset estimation block is also configured to apply a modified circle-fit algorithm to the plurality of sample pairs to estimate a first DC offset exhibited by the first signal and a second DC offset exhibited by the second signal, the first and second DC offsets generated by the gain elements, the modified circle-fit algorithm includes a magnitude approximation term used to iteratively estimate the first and second DC offsets. The receiver system also includes a DC offset correction block configured to calculate one or more correction control signals based on the first and second DC offsets.

Abstract: An integrated circuit package has a first side and an opposite second side. The integrated circuit package comprises: a stack of layers comprising at least a first and second electrically isolating layers, a dielectric material arranged on the stack of layers at the second side for encapsulating the integrated circuit package, a first integrated antenna structure for transmitting and/or receiving a first radio frequency signal, and a first array of electrically conductive vias extending through at least the first electrically isolating layer and the dielectric material. The first integrated antenna structure is arranged between the first and second electrically isolating layers and is surrounded by the electrically conductive vias which are electrically connected to respective first metal patches arranged on the dielectric material at the second side.