Abstract: A semiconductor module includes a semiconductor unit including a semiconductor chip, a housing for accommodating the semiconductor unit, and a target member bonded to the housing by an adhesive having a water absorption rate of 0.5% or less.

Abstract: A semiconductor device includes a current spreading region of the first conductivity type provided on a drift layer and having a higher impurity density than the drift layer; a base region of a second conductivity type provided on the current spreading region; a base contact region of the second conductivity type provided in a top part of the base region and having a higher impurity density than the base region; and an electrode contact region of the first conductivity type provided in a top part of the base region that is laterally in contact with the base contact region, the electrode contact region having a higher impurity density than the drift layer, wherein a density of a second conductivity type impurity element in the base contact region is at least two times as much as a density of a first conductivity type impurity element in the electrode contact region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first semiconductor type, a first semiconductor layer of the first semiconductor type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first semiconductor type, trenches, a gate insulating film, and gate electrodes. The silicon carbide semiconductor device has a minimum value of a subthreshold slope factor (subthreshold swing) in a subthreshold region in a range from 0.24V/dec. to 0.3V/dec.

Abstract: A drive device for driving a voltage-controlled semiconductor element. The drive device includes: a drive circuit connected to the gate of the semiconductor element via a gate resistor; a delay circuit connected to the drive circuit, for delaying a drive signal output from the drive circuit until a gate voltage of the semiconductor element enters a Miller effect period, which is a period during which the gate voltage transitionally changes, the gate voltage having temperature dependency on a chip temperature of the semiconductor element; a one-shot circuit connected to the delay circuit, for outputting a pulse signal with a pulse width shorter than the Miller effect period; a comparator that compares the gate voltage with a reference voltage; and an AND circuit that outputs an overheat detection signal in response to the gate voltage exceeding the reference voltage.

Abstract: A semiconductor module includes a resin case housing a semiconductor element; an insulating layer extending outward from the resin case; and a first external connection terminal extending outward from the resin case, arranged above the insulating layer so as to face the insulting layer, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in a thickness direction of the insulating layer at a position overlapping the insulating layer in a plan view.

Abstract: A semiconductor device having a load. The semiconductor device including: an output element configure to connect to the load, the output element being switchable to operate the load; a drive circuit which outputs a drive signal for driving the output element to switch; a detection circuit which compares a state signal, indicative of an operating state of the output element, with a detection threshold, to thereby detect an abnormal level of the operating state; an abnormal level notification circuit which informs an outside of the detected abnormal level; an external terminal configured to receive an external signal for adjusting the detection threshold; and a detection threshold adjustment circuit which adjusts the detection threshold on a basis of the received external signal.

Abstract: A current detection circuit for a power supply circuit configured to generate an output voltage from an input voltage thereof, the power supply circuit including an inductor configured to receive the input voltage, a transistor configured to control an inductor current flowing through the inductor, and a diode coupled to a first node that is a node at which the inductor and the transistor are coupled. The current detection circuit is configured to detect the inductor current, and includes: a first capacitor coupled to the first node; and a second capacitor provided between the first capacitor and a ground, the second capacitor being coupled in series with the first capacitor.

Abstract: A semiconductor module includes a semiconductor chip arranged on a mounting board, and a wiring member electrically connected to the semiconductor chip. The wiring member includes a body portion elongated in the direction of a Y-axis, and one or more ridges protruding from a surface of a flat plate-shaped portion of the body portion and extending along the Y-axis.

Abstract: A semiconductor device includes n-type drift layer, n-type first current spreading layer on top surface of the drift layer, p-type base region on top surface of the first current spreading layer, p-type gate-bottom protection region inside the first current spreading layer, p-type base-bottom embedded region separated from the gate-bottom protection region and in contact with bottom surface of the base region, n-type second current spreading layer having side surface opposed to the gate-bottom protection region and in contact with side surface of the base-bottom embedded region, and insulated gate electrode structure inside trench penetrating the base region to reach the gate-bottom protection region. The impurity concentration ratio of the gate-bottom protection region to the first current spreading layer is greater than the impurity concentration ratio of the base-bottom embedded region to the second current spreading layer.

Abstract: A semiconductor module includes a circuit board having a semiconductor element mounted thereon, a lead including a first bonding portion bonded to the semiconductor element via a bonding material and a wiring portion connected to the first bonding portion, and a sealing material that seals the semiconductor element and the lead. The first bonding portion has first and second side surfaces that face each other. The wiring portion has a bent portion connected to the first bonding portion at a side of the first bonding portion at which the first side surface is located. The bent portion is bent at a border between the first bonding portion and the bent portion in a direction away from a lower surface of the first bonding portion. The border is located between the first and second side surfaces of the first bonding portion in a plan view of the lead.

Abstract: A semiconductor device 100A includes drive chips 21[k], a control chip 41A including a plurality of terminals H including a voltage terminal Hc and power supply terminals Hb[k] and configured to control each of the drive chips 21[k], using a corresponding one of power supply voltages Vb[k] supplied to a corresponding one of the power supply terminals Hb[k], a die pad 63 for supplying control voltage Vcc to the voltage terminal Hc, wires Qb[k] each connected to a corresponding one of the power supply terminals Hb[k] and for supplying a corresponding one of the power supply voltages Vb[k] to a corresponding one of the power supply terminals Hb[k], and a semiconductor chip 30A used for bootstrap operation to generate the power supply voltages Vb[k] and including diodes the number of which is the same as the number of the power supply voltages Vb[k].

Abstract: A control circuit for a circuit that has a rectifier circuit including first to fourth diodes, and first to fourth switches respectively connected in parallel with the first to fourth diodes, for rectifying an AC voltage; and a capacitor receiving the rectified AC voltage. The control circuit controls the first to fourth switches, and includes: a determination unit determining an off-period in which, when the AC voltage is applied, the first to fourth diodes turn off, the off-period including a first period and a second period, in which the first and fourth diodes, and the second and third diodes, respectively turn off; and a control unit turning on the first and fourth switches in the first period, when the second and third diodes are off, and turning on the second and third switches in the second period, when the first and fourth diodes are off.

Abstract: A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate of a first conductivity type; forming a first semiconductor layer of a first conductivity type at a surface of the silicon carbide semiconductor substrate, the first semiconductor layer having a first surface and a second surface opposite to each other, the second surface facing the silicon carbide semiconductor substrate; implanting ions of an inert element into a region of a surface layer of the first semiconductor layer, thereby, inducing ion implantation damage to a crystal structure of the region in which a long tail occurs, the surface layer being at the first surface of the first semiconductor layer; and implanting a dopant of a second conductivity type into the surface layer of the first semiconductor layer where the crystal structure is damaged, thereby, forming column regions of the second conductivity type.

Abstract: A semiconductor module, including: a first circuit board and a second circuit board respectively have a first switching element and a second switching element located thereon, each of the first and second switching elements having an emitter electrode; a first connecting portion and a second connecting portion respectively electrically connected to the emitter electrodes of the first and second switching elements over the first and second circuit boards; an auxiliary emitter terminal; and an auxiliary emitter wiring electrically connected to the auxiliary emitter terminal. The auxiliary emitter wiring includes: a branch point, a common wiring portion which connects the auxiliary emitter terminal and the branch point, and a first discrete wiring portion and a second discrete wiring portion which connect the branch point respectively to the first and second connecting portions, and which each have an inductance smaller than 10 percent of an inductance of the common wiring portion.

Abstract: A semiconductor device includes a plurality of power semiconductor elements and a control chip including a plurality of terminals including a first terminal and a plurality of second terminals and configured to control the plurality of power semiconductor elements, using power supply voltage supplied to the plurality of second terminals. The semiconductor device also includes a first conductor for supplying a predetermined control voltage to the first terminal, a plurality of first wirings individually connected to the plurality of second terminals and for supplying the power supply voltage to the plurality of the second terminals, a die pad on which the control chip is arranged, and a semiconductor chip including a diode used for bootstrap operation to generate the power supply voltage. The semiconductor chip is fixed to the die pad by an insulating material. The die pad is connected to a terminal to which a reference voltage is supplied.

Abstract: A trimming circuit configured to output a voltage according to the presence or absence of disconnection of a fuse resistor is provided, including a fuse resistor formed by a polysilicon layer arranged on a semiconductor substrate via an insulating film, a pad for trimming connected to one end of the fuse resistor, an output terminal electrically connected to a connection point between the fuse resistor and the pad, and configured to output a voltage according to the presence or absence of disconnection of the fuse resistor, and a diode formed on the semiconductor substrate, having one end connected to the other end of the fuse resistor.

Abstract: Provided is a scrubber apparatus for geothermal power generation configured to treat gas from geothermal power generation equipment to supply a power generation apparatus with the treated gas. The scrubber apparatus for geothermal power generation comprises: a wet-type cyclone scrubber unit that has a reaction tower into which the gas is introduced and a liquid spray unit for spraying liquid into the reaction tower and that is configured to treat the gas with the liquid; a gas derivation unit connected to the wet-type cyclone scrubber unit and configured to derive the gas to the power generation apparatus; and a swirling unit that is arranged farther downstream than the liquid spray unit in a gas flow channel including the wet-type cyclone scrubber unit and the gas derivation unit and that is configured to swirl the gas in a predetermined swirling direction.

Abstract: A semiconductor device including a semiconductor unit that has a first arm part, which includes: first and second semiconductor chips having first and second control electrodes on their front surfaces, a first circuit pattern where the first and second semiconductor chips are disposed, a second circuit pattern to which the first and second control electrodes are connected, and a first control wire electrically connecting the first and second control electrodes and the second circuit pattern sequentially in a direction; and a second arm part, which includes third and fourth semiconductor chips having third and fourth control electrodes on their front surfaces, a third circuit pattern where the third and fourth semiconductor chips are disposed, a fourth circuit pattern to which the third and fourth control electrodes are connected, and a second control wire electrically connecting the third and fourth control electrodes and the fourth circuit pattern sequentially in the direction.

Abstract: The present invention provides a method for producing a steam turbine member that is highly superior in smoothness. The present invention provides a method for producing a steam turbine member including a cladding layer forming step of forming a cladding layer from a powdered material containing a metal in a region of a base material in which corrosion easily occurs, and a surface heating step of heat-melting a surface of the cladding layer.

Abstract: A semiconductor device, including: an output element having a gate, the output element being configured to perform switching to thereby operate a load of the semiconductor device in accordance with a drive signal applied to the gate thereof; a current monitoring element having a gate and a sense emitter, the current monitoring element being configured to monitor a current flowing through the output element; and a voltage division circuit, which is connected between the gate of the output element and the sense emitter of the current monitoring element, which divides a voltage of the drive signal applied to the gate of the output element, and which applies an obtained voltage to the gate of the current monitoring element.