Patents Assigned to Fuji Electric Co., Ltd.
  • Publication number: 20220384627
    Abstract: A semiconductor device is an IGBT of a trench-gate structure and has a storage region directly beneath a p?-type base region. The semiconductor device has gate trenches and dummy trenches as trenches configuring the trench-gate structure. An interval (mesa width) at which the trenches are disposed is in a range of 0.7 ?m to 2 ?m. In each of the gate trenches, a gate electrode of a gate potential is provided via a first gate insulating film. In each of the dummy trenches, a dummy gate electrode of an emitter potential is provided via a second gate insulating film. A total number of the gate electrode is in a range of 60% to 84% of a total number of the dummy electrodes.
    Type: Application
    Filed: August 12, 2022
    Publication date: December 1, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Tohru SHIRAKAWA
  • Publication number: 20220384399
    Abstract: A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.
    Type: Application
    Filed: August 8, 2022
    Publication date: December 1, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Ryoichi KATO, Yoshinari IKEDA, Yuma MURATA
  • Patent number: 11515711
    Abstract: It is desirable to improve the accuracy of voltage control in the grid interconnection device for supplying the power generated by the distributed power source to the interconnection point. Provided is a grid interconnection device for supplying power generated by a distributed power source to an interconnection point, comprising: a calculation unit for calculating voltage at the interconnection point based on output voltage of the grid interconnection device, output current of the grid interconnection device, and an impedance component between the grid interconnection device and the interconnection point; and a control unit for controlling output power from the grid interconnection device, based on voltage at the interconnection point calculated by the calculation unit.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Songhao Yin, Takayuki Nagakura
  • Patent number: 11515782
    Abstract: A switching control circuit that controls switching of a switching device, the switching control circuit includes a frequency modulation circuit that generates an oscillator signal, and modulates a frequency of an oscillator signal with a predetermined frequency and a modulation index of two or more, and a drive circuit that drives the switching device in response to a signal corresponding to the modulated oscillator signal, the predetermined frequency being higher than a frequency indicative of a value that is a quarter of a half width of a bandpass filter used for measuring noise generated when the switching device is driven.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Ryuunosuke Araumi, Ryuji Yamada
  • Patent number: 11515869
    Abstract: A semiconductor device, including a control circuit that has a gate control circuit driving a power semiconductor element. The control circuit further includes a plurality of alarm detection circuits respectively detecting a plurality of abnormalities, a protection circuit stopping the gate control circuit responsive to the detection of any abnormality, an alarm signal generation circuit generating an alarm signal responsive to the detected abnormality, a warning detection circuit detecting a warning before any of the abnormalities is detected, and a pulse generation circuit generating a warning signal while the warning is being detected. The alarm signal is a one-shot pulse having a pulse width thereof corresponding to the detected abnormality, such that alarm signals generated responsive to different abnormalities have different pulse widths. The warning signal includes a plurality of successive pulses, each of which has a pulse width smaller than any of the pulse widths of the alarm signals.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Kenichiro Sato
  • Patent number: 11515292
    Abstract: A semiconductor device, having a first semiconductor chip including a first side portion at a front surface thereof and a first control electrode formed in the first side portion, a second semiconductor chip including a second side portion at a front surface thereof and a second control electrode formed in the second side portion, a first circuit pattern, on which the first semiconductor chip and the second semiconductor chip are disposed, a second circuit pattern, and a first control wire electrically connecting the first control electrode, the second control electrode, and the second circuit pattern. The first side portion and the second side portion are aligned. The first control electrode and the second control electrode are aligned. The second circuit pattern are aligned with the first control electrode and the second control electrode.
    Type: Grant
    Filed: August 27, 2020
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Mitsuhiro Kakefu, Hiroaki Ichikawa
  • Patent number: 11515700
    Abstract: A drive circuit of a voltage-controlled power semiconductor element, including first to fourth switching elements, first and second delay circuits, an overcurrent detection circuit, a slow shutdown detection circuit and a flip-flop. The first switching element turns on upon receiving an off signal. The second switching element is turned on by the first delayed signal generated by the first delay circuit. The third switching element turns on upon receiving a second delayed signal generated by the second delay circuit through the flip-flop. The fourth switching element is turned on by the slow shutdown detection signal generated by the slow shutdown detection circuit. The first to fourth switching elements extract electric charges from the gate terminal of the voltage-controlled power semiconductor element, with first to fourth extracting capabilities, respectively. The first and fourth extracting capabilities are larger than the third extracting capability and smaller than the second extracting capability.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Masanari Fujii
  • Patent number: 11515387
    Abstract: A method of manufacturing a silicon carbide substrate having a parallel pn layer. The method includes preparing a starting substrate containing silicon carbide, forming a first partial parallel pn layer on the starting substrate by a trench embedding epitaxial process, stacking a second partial parallel pn layer by a multi-stage epitaxial process on the first partial parallel pn layer, and stacking a third partial parallel pn layer on the second partial parallel pn layer by another trench embedding epitaxial process. Each of the first, second and third partial parallel pn layers is formed to include a plurality of first-conductivity-type regions and a plurality of second-conductivity-type regions alternately disposed in parallel to a main surface of the silicon carbide substrate.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Yasuyuki Kawada
  • Patent number: 11515868
    Abstract: An electronic circuit, including a first switching device that contains a first semiconductor material with a first band gap, and a second switching device that is coupled in parallel to the first switching device, and contains a second semiconductor material with a second band gap smaller than the first band gap. Each of the first and second switching devices has a control electrode, and the control electrode of the first switching device is coupled to the control electrode of the second switching device.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Tadahiko Sato
  • Patent number: 11513165
    Abstract: A power semiconductor module including at least first and second power semiconductor elements, includes a first terminal, a first gate terminal, a second terminal, a second gate terminal, a third terminal and a common terminal. The first terminal connected to a first electrode of the first power semiconductor element. The first gate terminal connected to a gate of the first power semiconductor element. The second terminal connected to a first electrode of the second power semiconductor element. The second gate terminal connected to a gate of the second power semiconductor element. The third terminal connected to a second electrode of the first power semiconductor element and a second electrode of the second power semiconductor element. The common terminal that is connected to the first gate terminal through a first resistor and is connected to the second gate terminal through a second resistor.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Tadahiko Sato
  • Patent number: 11513546
    Abstract: A current generation circuit includes a metal-oxide-semiconductor (MOS) transistor having a source terminal coupled to one line of a power supply line and a ground line, a voltage generation circuit configured to generate a first voltage corresponding to a resistance value of wiring between the one line and the source terminal, and a control circuit configured to cause the MOS transistor to generate a predetermined current based on the first voltage.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: November 29, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Takahiro Mori
  • Publication number: 20220375845
    Abstract: A semiconductor device, including a sealing body portion, a nut and a bus bar. The sealing body portion has a housing portion formed on a front surface thereof, the sealing body portion including a semiconductor chip contained therein and a plurality of pin-shaped external connection terminals electrically connected to the semiconductor chip. The nut has a screw hole and disposed in the housing portion. The bus bar is arranged opposite the housing portion, and includes a fastening area with an opening portion opposite the screw hole of the nut, and a bonding area that is outside the fastening area and is connected to the plurality of external connection terminals. The sealing body portion has a protrusion adjacent to the bonding area of the bus bar.
    Type: Application
    Filed: April 18, 2022
    Publication date: November 24, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Norihiro DAICHO, Fumihiko MOMOSE
  • Publication number: 20220377939
    Abstract: A cooling apparatus includes: a first member including a first surface in contact with a cooling target, a second surface opposite to the first surface, and radiating fins protruding from the second surface; and a second member including a third surface facing the second surface, a refrigerant flows between the first member and the second member, the second member includes a first protrusion protruding from the third surface toward a space, the space existing between the radiating fins in a flow direction of the refrigerant, the first protrusion includes a first slope inclined to the third surface, the first slope includes a first end and a second end, the first end is closer to the second surface than the second end, the second end is closer to the third surface than the first end, the first end is positioned downstream in the flow direction from the second end.
    Type: Application
    Filed: March 22, 2022
    Publication date: November 24, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Ginji UCHIBE
  • Publication number: 20220376054
    Abstract: A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, a gate insulating film, gate electrodes, first electrodes, a second electrode, and a gate pad portion configured by a gate electrode pad and a connecting portion. The second semiconductor layer includes a first region facing the connecting portion and a second region facing a corner portion of the gate electrode pad, and the first and second regions are free of the second semiconductor regions. The oxide film is provided on surfaces of the second semiconductor regions and the first and second regions, and the oxide film and the gate insulating film are made of a same material.
    Type: Application
    Filed: March 28, 2022
    Publication date: November 24, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Shingo HAYASHI, Akimasa KINOSHITA
  • Publication number: 20220370948
    Abstract: There is provided a scrubber device including: a reaction tower in which an internal space is formed; a liquid spray unit configured to spray a liquid in the internal space; a gas inlet port configured to introduce a gas to the reaction tower; a liquid outlet port configured to discharge, from the reaction tower, drainage generated by treatment of taking, into the liquid, a substance in the gas; a gas supply unit configured to supply the treated gas from the reaction tower; and a heating unit which is provided in at least a part of a portion close to the liquid outlet port with respect to the gas inlet port in the reaction tower, and a portion of a liquid outlet tube that is connected downstream from the liquid outlet port, and which is configured to heat the drainage.
    Type: Application
    Filed: May 5, 2022
    Publication date: November 24, 2022
    Applicants: FUJI ELECTRIC CO., LTD., FUJI ELECTRIC CO., LTD.
    Inventor: Taichiro KATO
  • Publication number: 20220376614
    Abstract: A power supply circuit of a step-down type, configured to generate an output voltage at a predetermined level from an alternating current (AC) voltage. The power supply circuit includes a rectifier circuit configured to rectify the AC voltage, a first line coupled to the rectifier circuit, a second line on a ground side, a switch coupled between the first line and the second line, and a control circuit configured to control the switch to bring a level of the output voltage to the predetermined level. The power supply circuit is free of an inductor interposed between the first line and the rectifier circuit.
    Type: Application
    Filed: March 24, 2022
    Publication date: November 24, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Yoshinori KOBAYASHI, Masayuki YAMADAYA, Hironobu SHIROYAMA, Toshimitsu MORIMOTO
  • Publication number: 20220375818
    Abstract: A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.
    Type: Application
    Filed: May 17, 2022
    Publication date: November 24, 2022
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventor: Yuhei NISHIDA
  • Patent number: 11506987
    Abstract: An electrophotographic photoreceptor includes a conductive substrate and a photosensitive layer containing a charge transport portion including a first hole transport material represented by General Formula (1) below, a cured resin, and a cross-linked structure there between: where Za is a polymerizable functional group with a Structural Formula (2), (3), or (4), Zb is a divalent group with a Structural Formula (6) or (7), Ra, Rb, Rc and Rd each are one of a branched or unbranched alkyl group having from 1 to 6 carbon atoms, an alkoxy group having from 1 to 6 carbon atoms, a substituted or unsubstituted phenyl group, or a substituted or unsubstituted styryl group, I is 0 or 1 when Za is (2) or (4) and 1 when Za is (3), m is from 0 to 5, n, o, and p are each from 0 to 4, q is from 1 to 3.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: November 22, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Shinjiro Suzuki, Tomoki Hasegawa, Fengqiang Zhu
  • Patent number: 11508581
    Abstract: Plural sessions of proton irradiation are performed by differing ranges from a substrate rear surface side. After first to fourth n-type layers of differing depths are formed, the protons are activated. Next, helium is irradiated to a position deeper than the ranges of the proton irradiation from the substrate rear surface, introducing lattice defects. When the amount of lattice defects is adjusted by heat treatment, protons not activated in a fourth n-type layer are diffused, forming a fifth n-type layer contacting an anode side of the fourth n-type layer and having a carrier concentration distribution that decreases toward the anode side by a more gradual slope than that of the fourth n-type layer. The fifth n-type layer that includes protons and helium and the first to fourth n-type layers that include protons constitute an n-type FS layer. Thus, a semiconductor device having improved reliability and lower cost may be provided.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: November 22, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Kouji Mukai, Souichi Yoshida
  • Patent number: 11509215
    Abstract: Recently, it is desired to improve responsiveness in case where a drop in the output voltage is prevented. A power supply control device is provided, comprising a switch control unit for controlling an ON/OFF state of a switching device of a boosting chopper using an oscillation wave, a voltage acquisition unit for acquiring DC output voltage corresponding to an output of the boosting chopper, and an oscillation control unit for reducing a change speed of the oscillation wave during at least a part of a period during which the switching device is in an ON state, in response to a drop in the DC output voltage.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: November 22, 2022
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventor: Nobuyuki Hiasa