Abstract: An object of the present disclosure is to provide a semiconductor module capable of reducing variation in drive characteristics of each of plural semiconductor switching elements. A semiconductor module includes IGBTs configured to supply power to a load and gate driver circuits in which drive targets are set in a one-to-one relationship to the IGBTs and in which according to a positional relationship to, for example, the IGBT as the drive target, a driving capability of the gate driver circuit to drive the IGBT is set.

Abstract: A semiconductor device includes a semiconductor module having a wiring board, semiconductor assemblies that include a multilayer substrate on which semiconductor elements are mounted, and a sealing part; a cooler; and a heat conduction sheet which is placed between the semiconductor module and the mounting surface of the cooler and which is in contact with the bottom surfaces of the multilayer substrates. The heat conduction sheet has recesses corresponding to at least parts of the outer edges of second electrically conductive plates provided on the bottoms of the multilayer substrates.

Abstract: Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.

Abstract: A detection circuit including a temperature voltage generator circuit and an output circuit. The temperature voltage generator circuit generates a detection voltage corresponding to a temperature of the detection circuit based on a predetermined constant current, when a pulse signal received by the detection circuit is at a first level, and stop generating the detection voltage when the pulse signal is at a second level. The output circuit outputs a detection signal indicating whether the temperature is higher than a predetermined temperature based on the detection voltage, during a period of time between a first time that is a predetermined time period after the pulse signal reaches the first level and a second time at which the pulse signal switches from the first level to the second level, the pulse signal remaining in the first level in the period of time.

Abstract: Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided.

Abstract: A power conversion device includes a controller configured to alternately turn on a second upper arm and a second lower arm of a first bridge circuit such that on-times thereof do not overlap each other to increase power stored in a resonance capacitor of the first bridge circuit in a state in which a first leg of the first bridge circuit is turned off when transmitting power from a second bridge circuit to the first bridge circuit and performing step-up operation.

Abstract: A power semiconductor module includes a half-bridge circuit having a first power semiconductor element and a second power semiconductor element that are connected in series with each other. The power semiconductor module also includes first to third external terminals, a first wiring member that connects a high-potential-side main electrode of the first power semiconductor element to the first external terminal, a second wiring member that connects a low-potential-side main electrode of the second power semiconductor element to the second external terminal, a third wiring member that connects an output of the half-bridge circuit to a third external terminal, and at least one of a first corrosion sensor disposed in an installation environment of the first wiring member, a second corrosion sensor disposed in an installation environment of the second wiring member, or a third corrosion sensor disposed in an installation environment of the third wiring member.

Abstract: A semiconductor device includes a conductive board, a contact component having a cylindrical through hole and including a main body portion with first and second open ends, and an external connection terminal inserted in the through hole of the contact component, having four outer surfaces extending in an insertion direction to form a quadrangular prism shape, and having four corner portions along an insertion direction pressed by an inner circumferential surface of the through hole of the contact component. The external connection terminal has protrusions, each of which is disposed on a respective one of at least one pair of opposite outer surfaces among the four outer surfaces, and being pressed by the inner circumferential surface of the through hole.

Abstract: A method of manufacturing a silicon carbide semiconductor device, including forming a first-conductivity-type region in a SiC semiconductor substrate, selectively forming a plurality of second-conductivity-type regions in the first-conductivity-type region, forming an interlayer insulating film covering the first-conductivity-type region and the second-conductivity-type regions, selectively removing the interlayer insulating film to form a plurality of openings exposing the second-conductivity-type regions, forming, in each opening, a layered metal film having a cap film stacked on an aluminum film, thermally diffusing aluminum atoms in the aluminum film to thereby form a plurality of second-conductivity-type high-concentration regions, removing the layered metal film, selectively removing the interlayer insulating film to form a contact hole, forming a first electrode by sequentially stacking a titanium film and a metal film containing aluminum on the first surface of the semiconductor substrate in the conta

Abstract: A solder material having a good thermal-cycle fatigue property and wettability. The solder material contains not less than 6.0% by mass and not more than 8.0% by mass Sb, not less than 3.0% by mass and not more than 5.0% by mass Ag, and the balance of Sn and incidental impurities. Also, a semiconductor device may include a joining layer between a semiconductor element and a substrate electrode or a lead frame, the joining layer being obtained by melting this solder material.

Abstract: A bonding tool for bonding two conductive plates in contact with each other by pressing the bonding tool against the two conductive plates while vibrating a bonding end portion thereof in a direction parallel to the conductive plates. The bonding end portion of the bonding tool includes a bonding base having an end surface, the end surface having a protrusion area that has two sides facing and parallel to each other in a first direction that is parallel to the end surface, a plurality of protrusions provided in the protrusion area of the end surface, and a suppression portion provided on the end surface along the two sides of the protrusion area. The bonding end portion is configured to vibrate in the first direction.

Abstract: A semiconductor device includes an integrated circuit having a first resistor configuring a voltage divider circuit, a sensing resistor configured to measure a sheet resistance having a same attribute as that of the first resistor, a temperature detection circuit configured to detect a value of a first temperature, a storage circuit configured to store a table including first information for each of a plurality of values of the first temperatures, the first information corresponding to a sheet resistance of the first resistor obtained based on a result of measurement of the sensing resistor, and indicating a relationship between a second temperature and a divided voltage of the voltage divider circuit at the second temperature, and an arithmetic circuit configured to obtain the second temperature, based on the first information at the value of the first temperature detected by the temperature detection circuit and the divided voltage.

Abstract: A gate insulating film has a multilayer structure including a SiO2 film, a LaAlO3 film, and an Al2O3 film that are sequentially stacked, relative permittivity of the gate insulating film being optimized by the LaAlO3 film. In forming the LaAlO3 film constituting the gate insulating film, a La2O3 film and an Al2O3 film are alternately deposited repeatedly using an ALD method. The La2O3 film is deposited first, whereby during a POA performed thereafter, a sub-oxide of the surface of the SiO2 film is removed by a cleaning effect of lanthanum atoms in the La2O3 film. A temperature of the POA is suitably set in a range from 700 degrees C. to less than 900 degrees C.

Abstract: A semiconductor device including a semiconductor chip, an insulating circuit board having a circuit pattern formed on an insulating plate, a case including a frame part having an opening that is substantially rectangular in a plan view of the semiconductor device, inner wall surfaces of the frame part at the opening forming a storage part to store the insulating circuit board, and a printed circuit board which has a flat plate shape and which protrudes from one of the inner wall surfaces of the frame part toward the storage part. The semiconductor device further includes a sealing material filled in the storage part, to thereby seal the semiconductor chip and the printed circuit board. A front surface of the sealing material forms a sealing surface, and in a thickness direction of the semiconductor chip, the sealing surface is higher around the printed circuit board than around the semiconductor chip.

Abstract: A semiconductor device includes an output-stage element and a detection element, each of the output-stage element and the detection element including: a channel-formation region deposited at an upper part of a drift region; a main electrode region deposited at an upper part of the channel-formation region; and a gate electrode buried via a gate insulating film in one or more first trenches in contact with the main electrode region, the channel-formation region, and the drift region, wherein the first trenches used in common with the detection element and the output-stage element extend in a planar pattern, and a plurality of second trenches extending in parallel to each other in a direction perpendicular to the first trenches interpose the detection element so as to separate the channel-formation region of the output-stage element and the channel-formation region of the detection element from each other.

Abstract: A control circuit for controlling an output transistor for outputting power includes: a ramp terminal connected to a ramp resistance; a ramp waveform generation unit for generating a ramp waveform including a slope corresponding to a resistance value of the ramp resistance; an output control unit for controlling at least one of an ON time or an OFF time of the output transistor based on a comparison result between the ramp waveform and a comparison voltage; and a state detection unit for detecting a state of the ramp resistance connected to the ramp terminal, wherein the output control unit turns the output transistor to an OFF state regardless of the comparison result, when the state of the ramp resistance becomes a predetermined state.

Abstract: There is provided a semiconductor device including a drift region of a first conductivity type, a first semiconductor region of the first conductivity type provided above the drift region and having a doping concentration higher than the drift region, a second semiconductor region of a second conductivity type provided between the first semiconductor region and the drift region, and a plurality of trench portions arranged in a first direction and having an extending portion that extends in a second direction perpendicular to the first direction. At least one trench portion of the plurality of trench portions has a first tapered portion at an upper side than a depth position of a lower surface of the second semiconductor region. The width of the first tapered portion in the first direction becomes smaller from a lower side of the first tapered portion toward an upper side of the first tapered portion.

Abstract: A semiconductor module circuit structure, including an insulating circuit substrate having an insulating plate, and a circuit pattern formed on a top face of the insulating plate, and a semiconductor element disposed on a top face of the circuit pattern. The circuit pattern includes a first straight part extending in a first direction, a second straight part extending in a second direction different from the first direction, and a corner part connecting the first and second straight parts. A wiring member is formed on a top surface of the first straight part along the first direction, the wiring member being formed off-center at the first straight part to be closer to an outer periphery of the circuit pattern.

Abstract: Even when a fault occurs on an electric power system, a command signal based on appropriate calculation is given to a distributed power supply. Provided is a control apparatus configured to control a plurality of distributed power supplies connected to an electric power system. The control apparatus comprises: a first calculation unit configured to calculate in advance reactive electric power to be output by each of the distributed power supplies in the event of a fault on the electric power system; and a command output unit configured to output, to each of the distributed power supplies, a command signal for causing each of the distributed power supplies to output the reactive electric power calculated in advance by the first calculation unit when it is detected that a fault has occurred on the electric power system.

Abstract: A switching control circuit for a power supply circuit that includes an inductor to which a voltage in accordance with an alternating current (AC) voltage is applied, and a transistor controlling an inductor current flowing through the inductor, the power supply circuit generating an output voltage from the AC voltage, the switching control circuit being configured to control switching of the transistor, the switching control circuit comprising: an ON signal output circuit that outputs an ON signal to turn on the transistor in response to the inductor current reaches a predetermined current, when a feedback voltage in accordance with the output voltage indicates that the output voltage is lower than a first level, and outputs the ON signal every first cycle when the feedback voltage indicates that the output voltage is higher than the first level; an OFF signal output circuit that outputs an OFF signal to turn off the transistor based on the feedback voltage; and a driver circuit that drives the transistor ba