Abstract: A vacuum lamination device for laminating a lamination member includes a base plate having an uneven surface contacting the lamination member for placing the lamination member, a frame member fixed to the base plate and having a discharge port for evacuating a processing space, and a cover member for hermetically sealing the processing space in the lamination process. The lamination member is placed on the uneven surface, and the cover member is placed so as to cover the lamination member. Then, a gaseous material in the processing space is evacuated through the discharge port while heating the processing space.

Abstract: An organic EL device includes a substrate; an organic EL element formed on the substrate; and a sealing film formed on the organic EL element, wherein the sealing film is a silicon nitride film containing from 0.85 to 0.95 at % H. A method of manufacturing the organic EL device, includes the steps of: forming an organic EL element on a substrate; and forming a sealing film on the organic EL element in a process including mixing SiH4, NH3, N2, and H2, during which the H2 is introduced at a flow rate set to from 1 to 5 volume percent of that of the N2, so that a silicon nitride film containing hydrogen atoms or hydrogen molecules is formed.

Abstract: An object of this invention is to provide a sealing film for an organic EL element having excellent moisture resistance, due to the absence of pinholes. A sealing film of this invention is a sealing film for an organic EL element having a layered structure of at least three layers with a silicon nitride film and a silicon oxynitride film layered in alternation, and is characterized in that odd-numbered layers from the side of the organic EL element are silicon nitride films having a film thickness (T1) of 200 nm or greater, and even-numbered layers from the side of the organic EL element are silicon oxynitride films having a film thickness (T2) of 20 nm or greater and 50 nm or less.

Abstract: The present invention provides a color conversion film which can maintain sufficient conversion light intensity without increasing the thickness thereof, and a multicolor light-emitting organic EL device which uses such a film. The color conversion film of the invention includes a polymeric dye material composed of a first dye unit and a second dye unit. The first dye unit absorbs light incident on the color conversion film and transfers the energy of the absorbed incident light to the second dye unit. The second dye unit receives the energy from the first dye unit and emits light.

Abstract: Provided are a color conversion film that maintains sufficient converted light intensity over a long period of time without increasing its thickness and a multicolor light-emitting organic EL device that includes the color conversion film. The color conversion film contains a conjugated high molecular weight copolymer having a structure of formula (1) that has alternating fluorene group-containing repeating units and arylenevinylene repeating units, and has phenylene groups inserted as spacers on both ends of the fluorene groups.

Abstract: A color conversion film is disclosed that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin.

Abstract: A cream solder obtained by kneading an Sn—Ag—Cu alloy together with a flux, wherein the Sn—Ag—Cu alloy includes a mixture of a first powdery alloy and a second powdery alloy, the first powdery alloy is represented by an Sn—Ag phase diagram having a solid-liquid coexistence region and has a given silver amount which is larger than that in the eutectic composition (3.5 wt. % silver), and the second powdery alloy has a silver amount which is that in the eutectic composition (3.5 wt. % silver) or which is close to that in the eutectic composition and is smaller than that in the first powdery alloy. This cream solder has excellent strength and thermal stability, and satisfactory bonding properties. It is based on an inexpensive Sn—Ag—Cu solder alloy. It is suitable for use as a high-temperature-side lead-free solder material conformable to temperature gradation bonding. Also provided is a method of soldering.

Abstract: An object of the invention is to ensure the thermal stability of magnetization even when a magnetic memory element is miniaturized. A magnetic memory element includes a first magnetic layer (22), an insulating layer (21) that is formed on the first magnetic layer (22), and a second magnetic layer (20) that is formed on the insulating layer (21). At least one of the first magnetic layer (22) and the second magnetic layer (20) is strained and deformed so as to be elongated in an easy magnetization axis direction of the magnetic layer (22) or (20) or compressive strain (101) remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

Abstract: A laminated bus bar is applied to a main wiring circuit of an electric power converter and connected to a semiconductor module. The laminated bus bar includes insulator plates laminated together, and conductors interposed between the insulator plates. Each conductor includes a connection terminal section led out in accordance with an arrangement of a main circuit terminal on the semiconductor module. A creepage groove is formed on an edge of each of the insulator plates in accordance with a position between the connection terminal sections. The laminated bus bar facilitates elongation of the creepage distance between the connection terminals.

Abstract: A method of manufacturing an organic EL element, which may be a top-emitting or a transparent organic EL element, provides an organic EL element having a low driving voltage and a high efficiency. The organic EL element includes a substrate; an anode; an organic EL layer which includes at least an emissive layer, an electron transport layer and a damage-mitigating electron injection layer; and a transparent cathode composed of a transparent conductive oxide material, the damage-mitigating electron injection layer is in contact with the transparent cathode, and the damage-mitigating electron injection layer includes a crystalline oligothiophene compound.

Abstract: An apparatus for estimating and evaluating characteristics of large-area series-connected solar battery cells from a measured current-voltage characteristic of a small-area single cell, includes an analysis model construction unit, an analysis operation unit and an evaluation unit. The construction unit reads shape parameters and material physical properties of the cells and automatically constructs a finite element method model. The operation unit obtains a current at a voltage based on the measured characteristic, sets the current as a current load, calculates potential distributions of transparent electrode and rear electrode of the cells, corrects the current load based on a difference between the distributions and the measured characteristic, recalculates the distributions based on the corrected current load, and repeats the recalculation until the distributions converge.

Abstract: A thin-film solar cell can include a light-reflective metal electrode layer, a first transparent conductive layer, a semiconductor layer and a front transparent conductive layer. The metal electrode layer can be formed on a substrate and has an uneven structure. The first transparent conductive layer can contain an amorphous transparent conductive material. The thin-film solar cell further can have a second transparent conductive layer between the first transparent conductive layer and the semiconductor layer. The second transparent conductive layer can be made of a crystalline transparent conductive material. Due to the first transparent conductive layer made amorphous, the surface roughness of the metal electrode layer is reduced so that the semiconductor layer can be formed with a good film quality.

Abstract: In some aspects of the invention, a power semiconductor module is applied to a multi-level converter circuit with three or more levels of voltage waveform. A first IGBT, a diode whose cathode is connected to the emitter of the first IGBT, and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT, are housed in one package, and each of the collector of the first IGBT, the collector of the second IGBT, the connection point of the emitter of the first IGBT and the emitter of the second IGBT, and the anode of the diode, is an external terminal.

Abstract: Aspects of the invention are related to a power semiconductor module applied to a multi-level converter circuit with three or more levels of voltage waveform. Aspects of the invention can include a first IGBT to which a diode is reverse parallel connected and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT are housed in one package, and each of the collector of the first IGBT, the collector of the second IGBT, and the connection points of the emitter of the first IGBT and the emitter of the second IGBT, is an external terminal.

Abstract: An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)?Ip(HIL)?Ip(EML)?0.4 eV.

Abstract: A semiconductor device of a three-level inverter circuit with a reduced number of power supplies for driving IGBTs. The semiconductor device includes a series-connected circuit of IGBTs between P and N of a DC power supply and an AC switch element that is connected between a series connection point of the series-connected circuit and a neutral point of the DC power supply. The series-connected circuit and the AC switch element are integrated into one module. The AC switch element is formed by connecting a collector of a first IGBT to which a diode is connected in reverse parallel and a collector of a second IGBT to which a diode is connected in reverse parallel, and an intermediate terminal is provided at a connection point between the collectors.

Abstract: Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.

Abstract: A reverse block-type insulated gate bipolar transistor (IGBT) manufacturing method that, when manufacturing a reverse block-type IGBT having a separation layer formed along tapered surfaces of a V-shaped groove formed using anisotropic etching, can secure a highly reliable reverse pressure resistance, and suppress a leakage current when reverse biasing. When irradiating with a flash lamp for flash lamp annealing after implantation of ions into a second conductivity type separation layer and second conductivity type collector layer to form the second conductivity type collector layer and second conductivity type separation layer, the strongest portion of radiation energy is focused on a depth position from the upper portion to the central portion of a tapered side edge surface.

Abstract: Two conducting wires are used in one embodiment of an inductor. Opposite ends of each of the conducting wires are connected to leader lines (terminals) shared by the conducting wires. Each of the conducting wires is wound to make half a round of an annular or ring-like magnetic substance. One of the conducting wires is wound around a lower half area of the magnetic substance to form one winding while the other conducting wire is wound around an upper half area of the magnetic substance to form another winding. In this manner, the distance between the leader lines can be increased to eliminate parasitic capacitance between the leader lines. The magnetic fluxes generated by current flowing in the two windings are in the same direction. Thus, it is possible to provide an inductor whose total parasitic capacitance is reduced. In other embodiments, additional conducting wires are used.

Abstract: Provided is an organic EL device capable of maintaining an excellent luminous efficiency over an extended period of time, particularly in a top emission-type EL device. The organic EL device of the invention includes a substrate and an organic EL element formed on the substrate. The organic EL element is composed of a bottom electrode, an organic EL layer, a top electrode and a protective layer. The protective layer is composed of one or a plurality of inorganic films, and at least one of the one or plurality of inorganic films is an SiON:H film having stretching-mode peak area ratios, as determined by infrared absorption spectroscopy, that include an absorption area ratio of N—H bonds to Si—N bonds in the SiON:H film which is not less than 0.04 but not more than 0.07 and an absorption area ratio of Si—H bonds to Si—N bonds which is not more than 0.15.