Abstract: A line narrowing gas laser device includes a line narrowing device, an output coupling mirror, a laser chamber arranged on an optical path of an optical resonator, a first holder which supports the output coupling mirror, a second holder which supports the first holder to be rotatable about a rotation axis of the first holder, and an adjustment device supported by the second holder and being in contact with the first holder to rotate the first holder about the rotation axis. The line narrowing device has a characteristic of changing, into a first direction, beam pointing of laser light output toward the output coupling mirror when temperature inside the line narrowing device rises. The second holder and the adjustment device rotate the first holder in a direction in which a change in the first direction in the beam pointing of the laser light is suppressed by thermal expansion.

Abstract: A target substance replenishment device may include a first container containing a solid target substance, a first path through which the solid target substance supplied from the first container passes, a first supply switching device switching between a first state where supply of the solid target substance from the first container to the first path is suppressed and a second state where the supply of the solid target substance from the first container to the first path is allowed, a first valve connected to the first path, a second path which is connected to the first valve and through which the solid target substance having passed through the first valve passes, a first detector outputting a first detection signal indicating that the second path is clogged with the solid target substance, and a processor controlling the first supply switching device to the first state based on the first detection signal.

Abstract: A laser processing apparatus includes a placement base on which a workpiece is placed, a beam shaping optical system that shapes laser light such that a first laser light irradiated region of a mask blocking part of the laser light has a rectangular shape having short edges and long edges, the beam shaping optical system capable of causing one of a first radiation width of the first irradiated region in the direction parallel to the short edges and a second radiation width of the first irradiated region in the direction parallel to the long edges to be fixed and causing the other to be changed, a projection optical system that projects a pattern on the mask onto the workpiece, and a mover that moves the first irradiated region at least in the direction parallel to the short edges to move a second laser light irradiated region of the workpiece.

Abstract: A control method for a line narrowed gas laser apparatus is a control method for a line narrowed gas laser apparatus configured to emit a pulse laser beam including a first wavelength component and a second wavelength component. The apparatus includes a laser chamber including a pair of electrodes, an optical resonator including an adjustment mechanism configured to adjust a parameter of an energy ratio of the first and second wavelength components, and a processor in which relation data indicating a relation of the parameter of the energy ratio with a control parameter of the adjustment mechanism is stored. The control method includes receiving a command value of the parameter of the energy ratio from an external device, and acquiring, based on the relation data, a value of the control parameter corresponding to the command value and controlling the adjustment mechanism based on the value of the control parameter.

Abstract: A laser apparatus includes an oscillator that outputs a laser beam, an amplifier that amplifies the laser beam in a chamber including discharge electrodes, front-side and rear-side optical systems disposed at positions facing each other across the chamber and constituting a ring resonator including a first optical path and a second optical path intersecting between the pair of discharge electrodes, a front-side observation device for observation of the first and second optical paths between the front-side optical system and the chamber, and a rear-side observation device for observation of the first and second optical paths between the rear-side optical system and the chamber. Through the first optical path, the front-side optical system outputs, toward the rear-side optical system, the laser beam from the oscillator. Through the second optical path, the rear-side optical system outputs, toward the front-side optical system, the laser beam through the first optical path.

Abstract: A laser system includes a first semiconductor laser device configured to output first CW laser light, a first semiconductor optical amplification device configured to amplify the first CW laser light and output second CW laser light, an optical parametric amplification device configured to amplify the second CW laser light and output first pulse laser light, and a wavelength conversion device configured to perform wavelength conversion on the first pulse laser light and output second pulse laser light in a deep ultraviolet wavelength region.

Abstract: A gas laser device includes a laser chamber including an opening, an electrical insulating portion blocking the opening, a first electrode, and a second electrode facing the first electrode. The first electrode includes a contact region contacting the surface of the electrical insulating portion, an opposing surface facing the second electrode, and a first curved surface included in a region between the contact region and the opposing surface and convexly curved toward an outer side of the first electrode. In a cross section of the first electrode along a surface extending in a separation direction of the first electrode and the second electrode, the contact region is located on an inner side of the first electrode with respect to the first curved surface, and the first curved surface is a part of a circumference of a circle or an ellipse which does not intersect the electrical insulating portion.

Abstract: A line narrowing device includes first and second prisms disposed at positions different in a wavelength dispersion direction of any of the first and second prisms, a third prism disposed on the optical path of an optical beam and through which the beam width of the optical beam is enlarged and first and second parts of the optical beam are incident on the first and second prisms, respectively, a grating disposed across the optical path of the first part having passed through the first prism and the optical path of the second part having passed through the second prism, a first actuator configured to adjust the incident angle of the first part on the grating, a second actuator configured to adjust the incident angle of the second part on the grating, and a third actuator configured to adjust an energy ratio of the first and second parts.

Abstract: Provided is a laser annealing apparatus causing laser light to be radiated to processing receiving areas arranged, out of a first direction and a second direction perpendicular to the first direction, along at least the second direction and move a batch radiation area and a workpiece in the first direction, and the laser annealing apparatus includes an energy density measuring apparatus measuring the energy density at, out of first and second ends of the batch radiation area in the second direction, at least the second end, an energy density adjusting apparatus adjusting the energy density at the first end, and a controller controlling the energy density adjusting apparatus. The energy density at the first end when (N+1)-th scanning is performed is so adjusted that the energy density at the first end in an (N+1)-th scan area approaches the energy density at the second end in the N-th scan area.

Abstract: A laser device according to an aspect of the present disclosure includes a chamber into which laser gas is introduced; a pair of electrodes arranged in the chamber; a power source configured to apply a voltage between the electrodes; a nozzle structure which includes an internal passage for receiving the laser gas and a slit connected to the internal passage and is configured to generate flow of the laser gas between the electrodes due to the laser gas blowing out from the slit; a gas flow path which has a suction port through which the laser gas in the chamber is suctioned and introduces, to the nozzle structure, the laser gas suctioned through the suction port; and a blower device configured to cause the laser gas to blow toward the internal passage of the nozzle structure through the gas flow path.

Abstract: Provided is an optical proximity correction method in consideration of off-axis chromatic aberration produced when a photosensitive substrate is exposed to pulse laser light having center wavelengths. A method for creating a photomask includes scanning a test wafer in a first direction with the pulse laser light via a test mask to pattern the test wafer, measuring a wafer pattern of the patterned test wafer to acquire a measured wafer pattern indicating the result of the measurement in each of divided regions arranged on a surface of the test wafer in a second direction that intersects with the first direction, creating a corrected mask pattern for creating the photomask based on a test mask pattern formed at the test mask, the measured wafer pattern, and a target pattern that is a target wafer pattern at a photosensitive substrate, and creating the photomask based on the corrected mask pattern.

Abstract: An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

Abstract: A control method for a line narrowed gas laser apparatus is a control method for a line narrowed gas laser apparatus configured to emit a pulse laser beam including a first wavelength component and a second wavelength component. The apparatus includes a laser chamber including a pair of electrodes, an optical resonator including an adjustment mechanism configured to adjust a parameter of an energy ratio of the first and second wavelength components, and a processor in which relation data indicating a relation of the parameter of the energy ratio with a control parameter of the adjustment mechanism is stored. The control method includes receiving a command value of the parameter of the energy ratio from an external device, and acquiring, based on the relation data, a value of the control parameter corresponding to the command value and controlling the adjustment mechanism based on the value of the control parameter.

Abstract: An electronic device manufacturing method includes acquiring a pulse spectral shape of pulse laser light, and a target integrated spectral shape realized by the pulse laser light of pulses generated based on wavelength sequence in which a center wavelength of the pulse laser light periodically changes; calculating target center wavelengths allocated to the pulses to realize the target integrated spectral shape, and a number of allocation pulses of each target center wavelength being the number of allocation pulses per cycle of the wavelength sequence; calculating the wavelength sequence by correspondingly allocating at least one first center wavelength having the number of allocation pulses of 2 or greater so that the smaller the number of allocation pulses is, the larger a time interval of the allocation pulses for the first center wavelength is, and then correspondingly allocating at least one second center wavelength having the number of allocation pulses of 1.

Abstract: An EUV light generation apparatus includes a chamber; a target supply device supplying a first target; a laser device outputting first pulse laser light to be incident on the first target, outputting second pulse laser light to be incident on a second target, and adjusting a control parameter correlated with a shape of plasma generated by the second pulse laser light being incident on the second target; an EUV light concentrating mirror reflecting EUV light emitted from the plasma and concentrating the EUV light on an intermediate focal point; a camera imaging the EUV light and generating a picture including an image of the plasma; and a processor obtaining a value of the control parameter for improving circularity of a profile of the EUV light at the intermediate focal point using the picture and correlation information including a correlation between the shape of the plasma and the control parameter.

Abstract: A laser processing apparatus includes a placement base on which a workpiece is placed, a beam shaping optical system that shapes laser light such that a first laser light irradiated region of a mask blocking part of the laser light has a rectangular shape having short edges and long edges, the beam shaping optical system capable of causing one of a first radiation width of the first irradiated region in the direction parallel to the short edges and a second radiation width of the first irradiated region in the direction parallel to the long edges to be fixed and causing the other to be changed, a projection optical system that projects a pattern on the mask onto the workpiece, and a mover that moves the first irradiated region at least in the direction parallel to the short edges to move a second laser light irradiated region of the workpiece.

Abstract: A laser system includes a first laser outputting first laser light, an optical intensity changer outputting first pulse laser light, a modulator widening spectral linewidth of the first laser light or the first pulse laser light, an optical fiber amplifier amplifying the first pulse laser light and outputting second pulse laser light, a second laser outputting second laser light, an optical parametric amplifier amplifying the second laser light and outputting third pulse laser light, a wavelength converter outputting fourth pulse laser light using the second and third pulse laser light, an amplification section amplifying the fourth pulse laser light and outputting fifth pulse laser light, and a processor controlling a modulation signal such that the fifth pulse laser light having target spectral linewidth is generated, and controlling the center wavelength of the second laser light such that the fifth pulse laser light having a target center wavelength is generated.

Abstract: An optical pulse stretcher that stretches a pulse width of a pulse laser beam includes a polarizer configured to separate a component in a specific polarization direction of the pulse laser beam that has entered, a delay optical system including a plurality of mirrors through which the pulse laser beam reflected by or transmitted through the polarizer is propagated; and a first Faraday rotator that includes a first magnet and a first Faraday material and is disposed on an optical path of the delay optical system to rotate a polarization direction of the pulse laser beam.

Abstract: A laser radiation optical system for laser doping and post-annealing, the laser radiation system including A. a laser apparatus configured to generate pulsed laser light that belongs to an ultraviolet region, B. a stage configured to move a radiation receiving object in an at least one scan direction, the radiation receiving object being an impurity source film containing at least an impurity element as a dopant and formed on a semiconductor substrate, and C. an optical system including a beam homogenizer configured to shape the beam shape of the pulsed laser light into a rectangular shape and generate a beam for laser doping and a beam for post-annealing that differ from each other in terms of a first beam width in the scan direction but have the same second beam width perpendicular to the scan direction.

Abstract: A narrowed-line gas laser apparatus includes a laser chamber that accommodates a pair of electrodes disposed so as to face each other, an output coupling mirror, and a line narrowing apparatus that forms an optical resonator along with the output coupling mirror, the line narrowing apparatus including an optical system having a first region and a second region on which a first portion and a second portion of a light beam that exits out of the laser chamber are incident, the first and second portions passing through different positions in a direction in which the pair of electrodes face each other, the optical system being configured to suppress an increase in the distance between the optical path axis of the first portion and the optical path axis of the second portion.