Abstract: A method and system for providing a magnetic memory are described. The method and system include providing memory array tiles (MATs), intermediate circuitry, global bit lines, global word lines, and global circuitry. Each MAT includes magnetic storage cells, bit lines, and word lines. Each of the magnetic storage cells includes at least one magnetic element and at least one selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element(s). The bit lines and the word lines correspond to the magnetic storage cells. The intermediate circuitry controls read and write operations within the MATs. Each global bit line corresponds to a first portion of the plurality of MATs. Each global word line corresponds to a second portion of the MATs. The global circuitry selects and drives part of the global bit lines and part of the global word lines for the read and write operations.

Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.

Abstract: Techniques, apparatus and circuits based on magnetic or magnetoresistive tunnel junctions (MTJs). In one aspect, a programmable circuit device can include a magnetic tunnel junction (MTJ); a MTJ control circuit coupled to the MTJ to control the MTJ to cause a breakdown in the MTJ in programming the MTJ; and a sensing circuit coupled to the MTJ to sense a voltage under a breakdown condition of the MTJ.

Abstract: A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.

Abstract: Devices having magnetic or magnetoresistive tunnel junctions (MTJS) have a multilayer insulator barrier layer to produce balanced write switching currents in the device circuitry, or to produce the magnetic devices with balanced critical spin currents required for spin torque transfer induced switching of the magnetization, or both for the MTJs under both the forward and reversed bias directions.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The second ferromagnetic layer has a very high perpendicular anisotropy and an out-of-plane demagnetization energy. The very high perpendicular anisotropy energy is greater than the out-of-plane demagnetization energy of the second layer.

Abstract: A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.

Abstract: A method and system for providing a magnetic element and memory utilizing the magnetic element are described. The magnetic element includes a reference layer, a nonferromagnetic spacer layer, and a free layer. The reference layer has a resettable magnetization that is set in a selected direction by a magnetic field generated externally to the reference layer. The reference layer is also magnetically thermally unstable at an operating temperature range and has KuV/kBT is less than fifty five. The spacer layer resides between the reference layer and the free layer. In addition, the magnetic element is configured to allow the free layer to be switched to each of a plurality of states when a write current is passed through the magnetic element.

Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.

Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.

Abstract: A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disables at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.

Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.

Abstract: A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.

Abstract: A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

Abstract: A method and system for providing a magnetic element are described. The magnetic element includes pinned and free layers, a nonmagnetic spacer layer between the free and pinned layers, and a stability structure. The free layer is between the spacer layer and the stability structure. The free layer has a free layer magnetization, at least one free layer easy axis, and at least one hard axis. The stability structure includes magnetic layers and is configured to decrease a first magnetic energy corresponding to the free layer magnetization being aligned with the at least one easy axis without decreasing a second magnetic energy corresponding to the free layer magnetization being aligned with the at least one hard axis. The magnetic element is configured to allow the free layer magnetization to be switched to between states when a write current is passed through the magnetic element.

Abstract: A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.