Abstract: The present invention provides a method for the production of an aqueous dispersion containing an electroconductive polymer component which enables electroconductive thin films which are outstanding in their transparency and electroconductivity to be formed, together with the aqueous dispersion obtained by said method. This method includes a stage in which a 3,4-dialkoxythiophene is polymerized in an aqueous solvent using an oxidizing agent in the presence of a polyanion and, in this stage, said oxidizing agent is added by the dropwise addition of a solution or dispersion containing said oxidizing agent to the reaction solution or, alternatively, in the polymerization stage, the alkali metal ion concentration in the reaction liquid is maintained at no more than 400 ppm.

Abstract: The invention is related to a boride of a metal of transition group four of the periodic table of the elements, wherein at least 40 wt. % of the particles have a grain size of more than 106 ?m, determined by sieve analysis according to ASTM B 214, and these particles consist of grown, monocrystalline grains. The invention also relates to a cermet, wettable powder and a surface coating which contain the boride. The invention further relates to a process to prepare the boride. The invention additionally relates to a process to prepare a cermet or a wettable powder.

Abstract: A solid electrolytic capacitor is disclosed. The capacitor comprises an organophosphorus material positioned between the dielectric layer and the polymeric electrolyte layer. The organophosphorus compound improves the interlayer adhesion between the dielectric and electrolyte layers.

Abstract: A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and/or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.

Abstract: The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole % of SnO2, and b) from about 1 to about 40 mole % of one or more materials selected from the group consisting of i) Nb2O5, ii) NbO, iii) NbO2, iv) WO2, v) a material selected consisting of a) a mixture of MoO2 and Mo and b) Mo, vi) W, vii) Ta2O5, and viii) mixtures thereof, wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

Abstract: Methods of stabilizing thiophene derivatives of the general formula (I) by treatment with basic compounds: wherein R1 and R2 each independently represents a moiety selected from the group consisting of hydrogen, optionally substituted C1-20 alkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, optionally substituted C1-20 oxyalkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, or wherein R1 and R2 together represent a fused cyclic moiety selected from the group consisting of optionally substituted C1-20 dioxyalkylene groups and C1-20 dioxyarylene groups; and stabilized thiophene derivatives that can be prepared by such methods.

Abstract: The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc.

Abstract: A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Jr, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR?R? (hydrazido(-1), wherein R, R? and R? have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

Abstract: A niobium compound, ammonium(bisaquo oxobisoxalato)niobate (NH4)[Nb(O)(C2O4)2(H2O)2] and hydrates thereof, is described along with formulations containing the same and methods for creating a product specification for a batch, lot, or shipment of such compounds, comprising specifying at least one property value for said batch, lot, or shipment.

Abstract: Processes comprising: melting a mixture comprising a valve metal precursor and a diluting agent in at least one first vessel under a first set of temperature and residence time conditions; transferring the mixture to at least one second vessel; and initiating, in the at least one second vessel, a reaction of the valve metal precursor to form a valve metal under a second set of temperature and residence time conditions; valve metal powder prepared thereby and uses therefor.

Abstract: A method of producing a refractory metal powder that includes providing a metal powder containing magnesium tantalate or magnesium niobate; and heating the powder in an inert atmosphere in the presence of magnesium, calcium and/or aluminum to a temperature sufficient to remove magnesium tantalate or magnesium niobate from the powder and/or heating the powder under vacuum to a temperature sufficient to remove magnesium tantalate or magnesium niobate from the powder, the heating steps being performed in any order. The metal powder can be formed into pellets at an appropriate sintering temperature, which can be formed into electrolytic capacitors.

Abstract: Disclosed are sintered bodies that include: (a) 30 to 100 mol % of NbOx, wherein 0.5<x<1.5; and (b) 0 to 70 mol % of MgO. The sintered bodies may be used as inert apparatuses in the production of niobium suboxide powder or niobium suboxide anodes, or as chemically resistant components in chemical apparatuses.

Abstract: A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface. The substrate can be used in electronic devices, which can also include one or more semiconductor components.

Abstract: Disclosed is a niobium suboxide powder for the manufacture of capacitors with higher break down voltages, higher temperatures of operation and elongated lifetimes. The powder is doped with nitrogen which is at least partly present in the form homogeneously distributed, x-ray detectable Nb2N-crystal domains. The niobium suboxide powder contains niobium suboxide particles having a bulk nitrogen content of between 500 to 20,000 ppm.

Abstract: The invention relates to a process for producing capacitors based on niobium suboxide, and having an insulator layer of niobium pentoxide. Also described is a powder mixture suitable for production of capacitors. Pressed bodies produced from the powder mixture, and capacitors having specific properties are also disclosed.

Abstract: The invention relates to a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current consisting of a solid electrolyte made of conductive polymers and an outer layer containing conductive polymers, to electrolytic capacitors produced by this process and to the use of such electrolytic capacitors.

Abstract: Macromolecular compounds having a core-shell structure are described. Also described is a process for preparing such macromolecular compounds, and their use as semiconductors in electronic structural elements.

Abstract: A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).

Abstract: A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and/or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.