Patents Assigned to H.C. STARCK
  • Publication number: 20080254970
    Abstract: A niobium compound, ammonium(bisaquo oxobisoxalato)niobate (NH4)[Nb(O)(C2O4)2(H2O)2] and hydrates thereof, is described along with formulations containing the same and methods for creating a product specification for a batch, lot, or shipment of such compounds, comprising specifying at least one property value for said batch, lot, or shipment.
    Type: Application
    Filed: September 16, 2006
    Publication date: October 16, 2008
    Applicant: H.C. Starck GmbH
    Inventors: Karsten Beck, Hady Seyeda, Udo Sulkowski, Axel Rosenkranz
  • Patent number: 7431751
    Abstract: A method of producing a refractory metal powder that includes providing a metal powder containing magnesium tantalate or magnesium niobate; and heating the powder in an inert atmosphere in the presence of magnesium, calcium and/or aluminum to a temperature sufficient to remove magnesium tantalate or magnesium niobate from the powder and/or heating the powder under vacuum to a temperature sufficient to remove magnesium tantalate or magnesium niobate from the powder, the heating steps being performed in any order. The metal powder can be formed into pellets at an appropriate sintering temperature, which can be formed into electrolytic capacitors.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: October 7, 2008
    Assignee: H.C. Starck Inc.
    Inventors: Leonid Natan Shekhter, Leonid Lanin, Anastasis M. Conlon
  • Publication number: 20080216602
    Abstract: Disclosed is a process for the reprocessing or production of a sputter target or an X-ray anode wherein a gas flow forms a gas/powder mixture with a powder of a material chosen from the group consisting of niobium, tantalum, tungsten, molybdenum, titanium, zirconium, mixtures of two or more thereof and alloys thereof with at least two thereof or with other metals, the powder has a particle size of 0.5 to 150 ?m, wherein a supersonic speed is imparted to the gas flow and the jet of supersonic speed is directed on to the surface of the object to be reprocessed or produced.
    Type: Application
    Filed: November 5, 2007
    Publication date: September 11, 2008
    Applicant: H. C. Starck GmbH
    Inventors: Stefan Zimmermann, Uwe Papp, Hans Keller, Steven A. Miller, Prabhat Kumar, Mark Gaydos, Rong-Chen Richard Wu
  • Publication number: 20080212263
    Abstract: Porous anode bodies suitable for use in solid state capacitors, the porous anode bodies prepared by processes which include providing a niobium suboxide powder comprising niobium suboxide particles having a bulk nitrogen content of 500 to 20,000 ppm, and agglomerating and coalescing the powder; and capacitors incorporating such anode bodies.
    Type: Application
    Filed: June 1, 2006
    Publication date: September 4, 2008
    Applicant: H. C. Starck GmbH
    Inventors: Christoph Schnitter, Holger Brumm, Christine Rawohl, Colin Mccracken
  • Patent number: 7419926
    Abstract: Disclosed are sintered bodies that include: (a) 30 to 100 mol % of NbOx, wherein 0.5<x<1.5; and (b) 0 to 70 mol % of MgO. The sintered bodies may be used as inert apparatuses in the production of niobium suboxide powder or niobium suboxide anodes, or as chemically resistant components in chemical apparatuses.
    Type: Grant
    Filed: October 12, 2004
    Date of Patent: September 2, 2008
    Assignee: H.C. Starck GmbH
    Inventors: Christoph Schnitter, Gerhard Wötting
  • Patent number: 7416789
    Abstract: A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface. The substrate can be used in electronic devices, which can also include one or more semiconductor components.
    Type: Grant
    Filed: November 1, 2004
    Date of Patent: August 26, 2008
    Assignee: H.C. Starck Inc.
    Inventors: Henry F. Breit, Rong-Chein Richard Wu, Prabhat Kumar
  • Publication number: 20080199393
    Abstract: Disclosed is a niobium suboxide powder for the manufacture of capacitors with higher break down voltages, higher temperatures of operation and elongated lifetimes. The powder is doped with nitrogen which is at least partly present in the form homogeneously distributed, x-ray detectable Nb2N-crystal domains. The niobium suboxide powder contains niobium suboxide particles having a bulk nitrogen content of between 500 to 20,000 ppm.
    Type: Application
    Filed: May 31, 2006
    Publication date: August 21, 2008
    Applicant: H.C. Starck GmbH
    Inventors: Christoph Schnitter, Holger Brumm, Christine Rawohl, Colin McCracken
  • Publication number: 20080193798
    Abstract: Molybdenum sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
    Type: Application
    Filed: August 29, 2005
    Publication date: August 14, 2008
    Applicant: H. C. STARCK INC.
    Inventors: Brad Lemon, Joseph Hirt, Timothy Welling, James G. Daily, David Meendering, Gary Rozak, Jerome O'Grady, Peter R. Jepson, Prabhat Kumar, Steven A. Miller, Richard Wu, Davd G. Schwarz
  • Patent number: 7411779
    Abstract: The invention relates to a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current consisting of a solid electrolyte made of conductive polymers and an outer layer containing conductive polymers, to electrolytic capacitors produced by this process and to the use of such electrolytic capacitors.
    Type: Grant
    Filed: July 19, 2006
    Date of Patent: August 12, 2008
    Assignee: H.C. Starck GmbH
    Inventors: Udo Merker, Klaus Wussow
  • Patent number: 7410609
    Abstract: The invention relates to a process for producing capacitors based on niobium suboxide, and having an insulator layer of niobium pentoxide. Also described is a powder mixture suitable for production of capacitors. Pressed bodies produced from the powder mixture, and capacitors having specific properties are also disclosed.
    Type: Grant
    Filed: July 19, 2004
    Date of Patent: August 12, 2008
    Assignee: H.C. Starck GmbH
    Inventor: Christoph Schnitter
  • Patent number: 7402651
    Abstract: Macromolecular compounds having a core-shell structure are described. Also described is a process for preparing such macromolecular compounds, and their use as semiconductors in electronic structural elements.
    Type: Grant
    Filed: March 24, 2005
    Date of Patent: July 22, 2008
    Assignee: H.C. Starck GmbH & Co. KG
    Inventors: Stephan Kirchmeyer, Sergei Ponomarenko, Aziz Muzafarov
  • Patent number: 7399335
    Abstract: A method of preparing primary refractory metals (e.g., primary tantalum metal) by contacting a particulate refractory metal oxide (e.g., tantalum pentoxide) with a heated gas (e.g., a plasma), is described. The heated gas comprises hydrogen gas. The temperature range of the heated gas and the mass ratio of hydrogen gas to refractory metal oxide are each selected such that: (i) the heated gas comprises atomic hydrogen; (ii) the refractory metal oxide feed material is substantially thermodynamically stabilized (i.e., the concurrent formation of suboxides that are not reduced by atomic hydrogen is minimized); and (iii) the refractory metal oxide is reduced by contact with the heated gas, thereby forming primary refractory metal (e.g., primary tantalum metal and/or primary niobium metal).
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: July 15, 2008
    Assignee: H.C. Starck Inc.
    Inventors: Leonid Natan Shekhter, Leah F. Simkins, Hugh P. Greville, Leonid Lanin
  • Patent number: 7381396
    Abstract: A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and/or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.
    Type: Grant
    Filed: July 13, 2004
    Date of Patent: June 3, 2008
    Assignee: H.C. Starck GmbH
    Inventors: Oliver Thomas, Christoph Schnitter
  • Patent number: 7377947
    Abstract: The invention relates to a process for the production of electrolyte capacitors having a low equivalent series resistance and low residual current, and which comprise a solid electrolyte of conductive polymers and an outer layer comprising conductive polymers applied in the form of a dispersion. Electrolyte capacitors produced by this process and the use of such electrolyte capacitors are also provided.
    Type: Grant
    Filed: April 10, 2006
    Date of Patent: May 27, 2008
    Assignee: H.C. Starck GmbH
    Inventors: Udo Merker, Klaus Wussow, Friedrich Jonas
  • Publication number: 20080110767
    Abstract: A process for recovery of valuable metals from superalloys by electrochemical decomposition is described, both electrodes being formed by the superalloy and the polarity of the electrolysis current being reversed with a frequency of from 0.005 to 5 Hz.
    Type: Application
    Filed: June 21, 2007
    Publication date: May 15, 2008
    Applicant: H.C. Starck GmbH
    Inventors: Viktor Stoller, Armin Olbrich, Juliane Meese-Marktscheffel, Wolfgang Mathy, Michael Erb, Georg Nietfeld, Gerhard Gille
  • Patent number: 7368176
    Abstract: The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.
    Type: Grant
    Filed: January 14, 2004
    Date of Patent: May 6, 2008
    Assignees: H.C. Starck Inc., Metal Matrix Cast Composites, Inc.
    Inventors: Richard Wu, James Cornie, Stephen Cornie, Hank Breit, Larry Ballard, Richard Malen, Prabhat Kumar, John Shields, Robert Desberg
  • Publication number: 20080102304
    Abstract: A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second major surface and a plurality of openings extending, at least partially, from the first major surface to the second major surface; and a Group IB metal from the periodic table of the elements or other high thermally conductive material filling at least a portion of the space encompassed by at least some of the openings; and optionally, a layer containing a Group IB metal from the periodic table or other high thermally conductive material disposed over at least a portion of the first major surface and at least a portion of the second major surface.
    Type: Application
    Filed: October 27, 2005
    Publication date: May 1, 2008
    Applicant: H.C. Starck Inc.
    Inventors: Henry F. Breit, Rong-Chen R. Wu, Prabhat Kumar
  • Publication number: 20080094779
    Abstract: A tantalum powder consisting of agglomerated primary particle with a minimum primary particle dimension of 0.2 to 0.8 ?m, a specific surface area of 0.9 to 2.5 m2/g and a particle size distribution determined to ASTM B 822 corresponding to a D10 value of 5 to 25 ?m, a D50 value of 20 to 140 ?m and a D90 value of 40 to 250 ?m, wherein the powder does not comprise an effective content of sintering protection agents.
    Type: Application
    Filed: September 24, 2005
    Publication date: April 24, 2008
    Applicant: H.C. Starck GmbH & Co. KG
    Inventors: Helmut Haas, Ulrich Bartmann
  • Publication number: 20080087138
    Abstract: The invention relates to the production of valve metal powders, in particular, tantalum powders by reduction of a corresponding valve metal compound, for example, K2TaF7, with an alkali metal in the presence of a diluent salt, whereby the reduction is carried out in the presence of a particle diminution agent, preferably, Na2SO4, which is added to the reaction mixture continuously or in aliquots.
    Type: Application
    Filed: December 9, 2004
    Publication date: April 17, 2008
    Applicant: H.C. Starck GmbH
    Inventors: Roland Scholl, Stefan Zimmermann
  • Patent number: 7358326
    Abstract: Multifunctional 3,4-alkylenedioxythiophene derivatives represented by formula (I) are described, In formula (I), n and m each independently of each other, and independently for each o, are an integer from 1 to 5, and o is 3 or 4. The groups R1, R2, R3 and R4 are independently of each other and independently for each o, selected from, for example, hydrogen, halogen and optionally substituted linear or branched C1-C20-alkyl. The group R— of formula (I) may be, independently for each o, hydrogen or a thiophene represented by the following formula (II), in which m, n, R1, R2, R3 and R4 are as described in formula (I). The group X— of formula (I) is a polyvalent linking unit (e.g., a triphenylamine radical). Also described are electrically conductive oligomers and polymers comprising the multifunctional 3,4-alkylenedioxythiophene derivatives of the present invention as a repeating or crosslinking unit.
    Type: Grant
    Filed: December 6, 2004
    Date of Patent: April 15, 2008
    Assignee: H.C. Starck GmbH
    Inventors: Helmut-Werner Heuer, Rolf Wehrmann