Abstract: Processes for preparing high-purity niobium alkoxides, especially niobium ethoxide, are described which include: (a) providing a crude niobium alkoxide starting material comprising at least one compound of the general formula (I) Nb(OR)5??(I) wherein each R independently represents a linear or branched C1-12 alkyl group; and (b) contacting the crude niobium alkoxide starting material with a treatment medium comprising a component selected from the group consisting of (i) one or more alcohols of the general formula (II) in an amount of 0.01 to 5% by weight, (ii) air or an oxygen-containing gas, and (iii) combinations thereof; R1OH??(II) wherein each R1 independently represents a linear or branched C1-12 alkyl group.

Abstract: Metallic materials consisting essentially of a conductive metal matrix, preferably copper, and a refractory dopant component selected from the group consisting of tantalum, chromium, rhodium, ruthenium, iridium, osmium, platinum, rhenium, niobium, hafnium and mixtures thereof, preferably in an amount of about 0.1 to 6% by weight based on the metallic material, alloys of such materials, sputtering targets containing the same, methods of making such targets, their use in forming thin films and electronic components containing such thin films.

Abstract: A process for preparing nickel hydroxide by alkaline precipitation from nickel salt solutions in the presence of complexing agents, in which the precipitation is carried out at at least two different locations in the same mother liquor with different precipitation kinetics at the different locations and the mother liquor is mixed prior to agglomeration of the precipitated primary crystals, is described.

Abstract: The invention relates to tungsten carbide powder consisting of powder particles, which have a core comprised of tungsten cast carbide and a covering comprised of tungsten monocarbide, to the production thereof by heating a tungsten cast carbide powder in the presence of a carbon source to a temperature ranging from 1300 to 2000° C., and to the use thereof for coating surfaces of parts subjected to wear and for producing drill bits.

Abstract: The invention relates to blends of metal, alloy or composite powders having a maximum mean particle diameter D50 of 75, preferably a maximum of 25 ?m, which are produced according to a process in which a base powder is first transformed into flake-like particles and these are then crushed in the presence of milling auxiliary agents, with further additives and also the use of these powder blends and moulded objects produced from them.

Abstract: The present invention relates to specific, novel tantalum and niobium compounds which can serve as starting materials for the preparation of chemical vapour deposition (CVD) precursors.

Abstract: Abradable coatings are provided. The coatings comprise SrTiO in combination with a ceramic, such as ytrria stabilized zirconia, or SrTiO in combination with an MCrAlX, such as NiCoCrAlY. The abradable coatings are suitable for use in high temperature environments found in gas turbine engines. Also provided are metal articles coated with such coatings, and abradable assemblies.

Abstract: A valve metal powder by is prepared by a particular set of sequential steps that involves the use of precursor having preformed morphology. The method by which the valve metal is prepared includes a stabilization step that results in the valve metal powder having secondary and tertiary structures that each corresponds to the secondary and tertiary structures of the precursor. Also described is a method of producing solid electrolyte capacitors that include the valve metal powder of the present invention.

Abstract: The present invention provides a method for the production of an aqueous dispersion containing an electroconductive polymer component which enables electroconductive thin films which are outstanding in their transparency and electroconductivity to be formed, together with the aqueous dispersion obtained by said method. This method includes a stage in which a 3,4-dialkoxythiophene is polymerized in an aqueous solvent using an oxidizing agent in the presence of a polyanion and, in this stage, said oxidizing agent is added by the dropwise addition of a solution or dispersion containing said oxidizing agent to the reaction solution or, alternatively, in the polymerization stage, the alkali metal ion concentration in the reaction liquid is maintained at no more than 400 ppm.

Abstract: The invention is related to a boride of a metal of transition group four of the periodic table of the elements, wherein at least 40 wt. % of the particles have a grain size of more than 106 ?m, determined by sieve analysis according to ASTM B 214, and these particles consist of grown, monocrystalline grains. The invention also relates to a cermet, wettable powder and a surface coating which contain the boride. The invention further relates to a process to prepare the boride. The invention additionally relates to a process to prepare a cermet or a wettable powder.

Abstract: A solid electrolytic capacitor is disclosed. The capacitor comprises an organophosphorus material positioned between the dielectric layer and the polymeric electrolyte layer. The organophosphorus compound improves the interlayer adhesion between the dielectric and electrolyte layers.

Abstract: A niobium suboxide powder comprising 100 to 600 ppm of magnesium is described. The niobium suboxide powder may (alternatively or in addition to 100 to 600 ppm of magnesium) further include 50 to 400 ppm of molybdenum and/or tungsten. The niobium suboxide powder is suitable for the production of: capacitors having an insulator layer of niobium pentoxide; capacitor anodes produced from the niobium suboxide powder; and corresponding capacitors.

Abstract: The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole % of SnO2, and b) from about 1 to about 40 mole % of one or more materials selected from the group consisting of i) Nb2O5, ii) NbO, iii) NbO2, iv) WO2, v) a material selected consisting of a) a mixture of MoO2 and Mo and b) Mo, vi) W, vii) Ta2O5, and viii) mixtures thereof, wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

Abstract: Methods of stabilizing thiophene derivatives of the general formula (I) by treatment with basic compounds: wherein R1 and R2 each independently represents a moiety selected from the group consisting of hydrogen, optionally substituted C1-20 alkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, optionally substituted C1-20 oxyalkyl groups which can contain up to 5 heteroatoms selected from the group consisting of oxygen and sulfur, or wherein R1 and R2 together represent a fused cyclic moiety selected from the group consisting of optionally substituted C1-20 dioxyalkylene groups and C1-20 dioxyarylene groups; and stabilized thiophene derivatives that can be prepared by such methods.

Abstract: The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction (“EBSD”) and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion (“CTE”) value between the CTE of the backing plate and the CTE of the layer of sputtering material. The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc.

Abstract: The invention relates to a process for producing capacitors based on niobium suboxide, and having an insulator layer of niobium pentoxide. Also described is a powder mixture suitable for production of capacitors. Pressed bodies produced from the powder mixture, and capacitors having specific properties are also disclosed.

Abstract: A tantalum or tantalum alloy which contains pure or substantially pure tantalum and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Jr, Pt, Mo, W and Re to form a tantalum alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the tantalum alloy.

Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR?R? (hydrazido(-1), wherein R, R? and R? have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

Abstract: Disclosed are sintered bodies that include: (a) 30 to 100 mol % of NbOx, wherein 0.5<x<1.5; and (b) 0 to 70 mol % of MgO. The sintered bodies may be used as inert apparatuses in the production of niobium suboxide powder or niobium suboxide anodes, or as chemically resistant components in chemical apparatuses.

Abstract: Processes comprising: melting a mixture comprising a valve metal precursor and a diluting agent in at least one first vessel under a first set of temperature and residence time conditions; transferring the mixture to at least one second vessel; and initiating, in the at least one second vessel, a reaction of the valve metal precursor to form a valve metal under a second set of temperature and residence time conditions; valve metal powder prepared thereby and uses therefor.