Abstract: A novel process for the preparation of high-purity zirconium, hafnium, tantalum and niobium alkoxides (alcoholates), novel tantalum and niobium compounds and a process for their preparation are provided. The process comprises the steps of mixing crude metal alkoxides M(OR)x having a halogen impurity of at least 0.05 wt. %, with an alcohol ROH, in which R is a C1-C12-alkyl radical, and subsequently or simultaneously metering in an excess of ammonia, based on the amount of mononuclear or polynuclear halogen-containing metal alkoxides.

Abstract: The invention relates to the use of gluconates in the production of semiconductor wafers, preferably in the polishing of the semiconductor wafers during the production process, and to a polishing agent based on an abrasive substance and/or colloid and a mixture of disuccinates or methylglycine diacetic acid (MGDA) and gluconates.

Abstract: Backing plate for sputter targets made of a composite material which comprises 5 to 99 wt. % of at least one refractory metal from the group consisting of Mo, W, Re and Ta and 95 to 1 wt. % of at least one fuirther metallic component from the group consisting of Cu, Ag and Au, process for the production thereof and unit which comprises the backing plate and a sputter target.

Abstract: The invention relates to formulations comprising polythiophenes A) comprising at least one polythiophene containing recurring units of the general formula (I-a) and/or (I-b) and at least two further polymers, the use thereof and electroluminescent arrangements comprising hole-injecting layers comprising these formulations.

Abstract: The invention relates to a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current consisting of a solid electrolyte made of conductive polymers and an outer layer containing conductive polymers, to electrolytic capacitors produced by this process and to the use of such electrolytic capacitors.

Abstract: The present invention is directed to bearings produced from a silicon nitride material. The silicon nitride material consists of a sintering aid selected from the group consisting of Al2O3 and Y2O3, silicon dioxide, and optionally, up to 10 mole %, based on the amount of silicon nitride, of an additive that reacts with silicon nitride, said additive selected from the group consisting of TiO2, WO3, MoO3 and mixtures thereof.

Abstract: The present invention relates to specific novel tungsten and molybdenum compounds to the use thereof for the deposition of tungsten- or molybdenum-containing layers by means of chemical vapour deposition, and to the tungsten- or molybdenum-containing layers produced by this process.

Abstract: The present invention relates to novel, water-soluble niobium compounds, a process for their preparation and their formulations.

Abstract: The invention concerns a process for producing transparent multi-layer electrodes from conductive polymers, electrodes produced by this process and their use in electro-optical structures.

Abstract: A process for reducing the content of alkali metal impurities (e.g., potassium) in ammonium metallate solutions is described. The process involves subjecting a feed solution containing ammonium metallate and alkali metal impurities to membrane filtration. The membrane filtration results in the formation of a retentate having a reduced level alkali metal relative to the feed solution, and a permeate containing substantially the balance of alkali metal. The permeate may also be further treated, to remove alkali metal there from, by passage through a cation exchange column, thereby forming a cation exchange treated permeate that may be combined with the retentate of the membrane filtration step.

Abstract: The present invention relates to coatings comprising electrically conductive polymers and melamine derivatives, their preparation and use, and dispersions for the preparation of such coatings.

Abstract: The invention relates to a novel process for the production of linear organic thiophene-phenylene oligomers represented by the following general formula (I), The process involves reacting (e.g., by means of a Suzuki coupling reaction) a compound represented by the following general formula (II), with a formula represented by the following general formula (III), The reaction may be conducted optionally in the presence of catalysts, optionally in a solution and/or optionally at elevated temperature. The linear organic thiophene-phenylene oligomers of the present invention may be used to form semi-conductive coatings.

Abstract: The invention relates to asymmetrical linear organic oligomers represented by the following formula (I), X—R1ArnR2 ??(I) in which n is from 4 to 10, Ar is for example an optionally substituted 2,5-thienylene group, R1 is for example a C10–C20 alkylene group, R2 is for example a C1–C12 alkyl group, and X is for example a vinyl group or an alkoxysilyl group. Also described is a process for the production of such organic oligomers, and semiconductors in electronic modules that include such organic oligomers.

Abstract: The invention relates to a process for the production of electrolyte capacitors having a low equivalent series resistance and low residual current for high nominal voltages, electrolyte capacitors produced by this process and the use of such electrolyte capacitors.

Abstract: A novel process for the preparation of high-purity zirconium, hafnium, tantalum and niobium alkoxides (alcoholates), novel tantalum and niobium compounds and a process for their preparation are provided. The process comprises the steps of mixing crude metal alkoxides M(OR)x having a halogen impurity of at least 0.05 wt. %, with an alcohol ROH, in which R is a C1-C12-alkyl radical, and subsequently or simultaneously metering in an excess of ammonia, based on the amount of mononuclear or polynuclear halogen-containing metal alkoxides.

Abstract: A process for the production of 3,4-dioxythiophene compounds represented by the following formula (I), is described. In formula (I) A, B, C and D in each case independently denote a bond, optionally substituted alkylene, optionally substituted cycloalkylene, optionally substituted arylene or (O—(CR1R2)m)x, where R1 and R2 in each case mutually independently denote hydrogen or optionally substituted alkyl, m denotes an integer from 1 to 10 and x denotes an integer from 1 to 10, provided that at least one of the units A, B, C or D does not denote a bond. The process involves reacting a 3,4-dihydroxythiophene or the alkali metal salt thereof with the following compound, TosO-A-B-C-D-OTos, thus forming an intermediate 3,4-dioxythiophene diester. The intermediate 3,4-dioxythiophene diester is saponified, thus forming an intermediate 3,4-dioxythiophene dicarboxylic acid, which is then decarboxylated, thereby forming the 3,4-dioxythiophene compound represented by formula-(I).

Abstract: A process for producing hafnium(III) nitride (HfN) or zirconium nitride coatings by means of the CVD method (chemical vapour deposition) from a reactive gas on a substrate surface, the HfN coating or ZrN coating and their use are described. In the process, a hafnium or zirconium tetrakis(dialkylamide) having the general formula Hf(NR1R2)4 or Zr(NR1R2)4 wherein R1 and R2 denote identical or different, straight-chain or branched C1 to C4 alkyl radicals, is used as the Hf precursor or Zr precursor and a hydrazine derivative having the general formula H2N—NR3R4 wherein R3 denotes a straight-chain or branched C1 to C4 alkyl radical and R4 independently denotes a C1 to C4 alkyl radical or H, is used as the reactive gas.

Abstract: Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 where R?C1 to C4 alkyl, R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes halogen from the group comprising Cl, Br, I, or NH—R5 where R5?optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an optionally substituted allyl radical, or an indenyl radical, or an optionally substituted benzyl radical, or an optionally substituted cyclopentadienyl radical, or —NR—NR?R? (hydrazido(?1), wherein R, R? and R? h

Abstract: An isocyanate is produced by: (a) reacting chlorine with carbon monoxide to form phosgene, (b) reacting the phosgene with an organic amine to form an isocyanate and hydrogen chloride, (c) separating the isocyanate and hydrogen chloride, (d) optionally, purifying the hydrogen chloride, (e) preparing an aqueous solution of the hydrogen chloride, (f) optionally, purifying the aqueous solution of hydrogen chloride, (g) subjecting the aqueous hydrogen chloride solution to electrochemical oxidation to form chlorine, and (h) returning at least a portion of the chlorine produced in (g) to (a).

Abstract: The production of electrically conductive polythiophenes by reaction of 2,5-dihalogen-3,4-ethylene dioxythiophenes with 3,4-ethylene dioxythiophenes in a solvent or liquid phase is provided. These polythiophenes can be used as a plastic or lacquer additive to provide antistatic properties.