Abstract: A dynamic type RAM is provided wherein the level of a precharge control signal supplied to a gate of a precharge MOSFET to precharge complementary data lines to a half level is made the half level during a period from the memory access until the selection of the word line, at the latest. Also, the precharge control signal, corresponding to a memory mat selected according to establishing of an address, is set to a low level, while the precharge control signal corresponding to a non-selective memory mat is set to a high level.

Abstract: A semiconductor memory device comprising a decoder circuit for selecting one divided word line from among a plurality of divided word lines; the decoder circuit including a first drive MOSFET which is arranged so as to be shared by a plurality of memory blocks each having the divided word lines with memory cells respectively coupled thereto and which receives signals to be supplied to main word lines, second drive MOSFETs which are respectively coupled to the first MOSFET in series so as to share it and which receive respective predecode signals corresponding to the plurality of divided word lines, a plurality of load means which are respectively coupled to drains of the second drive MOSFETs, and inverter circuits which invert phases of drain output signals of the respective second drive MOSFETs and transmit the inverted signals to the corresponding divided word lines.

Abstract: According to the present invention, a semiconductor chip is mounted on a zigzag in-line type package (ZIP) partially using a tabless lead frame and bonding pads are arranged on the chip so that the chip can be applied also to other different types of packages. As different types of packages there are a small out-line J-bent type package (SOJ) for which there is used a lead frame with tab and a dual in-line type package (DIP) for which there is used a tabless lead frame. Further, a plurality of bonding pad pairs are provided among the bonding pads on the chip each pad of such bonding pad pairs having the same function as the other pad associated therewith thereby duplicating a common function in different bonding pads on the semiconductor chip so as to readily facilitate, or make compatible, the semiconductor chip to a variety of or different types of packages.

Abstract: A semiconductor device comprising a plurality of circuits driven by at least one external power source, and at least one voltage converter transforming the voltage of the external power source into another voltage. At least a part of the plurality of circuits are driven by the output voltage of the at least one voltage converter, which is provided with a controller for controlling its load driving power, corresponding to the operation of the part of the plurality of circuits. The voltage converter includes a voltage limiter which is used exclusively for each of the different natures of the loads, and its operation and load driving power are controlled, depending on the operations of each of the loads.

Abstract: A mask-programmed ROM includes depletion type load MOSFETs provided between data lines in a memory array and a power supply voltage, the MOSFETs having a ground potential of the circuit applied to their gates. Reading of data is carried out by an amplifying MOSFET which supplies a current to a selected data line through a depletion type MOSFET which is supplied at its gate with the circuit ground potential. Thus, bias voltages which are respectively applied to the data lines and a sense amplifier which receives a signal read out from a selected data line are made equal to each other, thereby achieving a high-speed read operation.

Abstract: A plurality of external input information are added to a selecting circuit. The output of the selecting circuit is fed back as one of the external input information to the selecting circuit. The input signal groups are decoded, and are produced as control signals to specify the external input information in synchronism with clock signals. When the input select signal groups have the non-selection mode, the output that is fed back is necessarily selected.

Abstract: Information read out from a memory cell of a static type semiconductor memory is subjected to multi-stage sense amplification in an initial stage sense amplifier, a post-stage snese amplifier and a main amplifier and then transmitted to the input of an output buffer circuit. Since an equalizing circuit is connected to the complementary inputs of each stage of the multi-stage sense amplifier, an inverse information read operation can be executed at high speed. Initially, the initial stage sense amplifier, the post-stage sense amplifier and the main amplifier are controlled to operate in high amplification gain conditions so as to execute high speed sense amplification and thereafter controlled to operate in such low power consumption conditions that the read-out information output obtained by the high speed sense amplification will not disappear.

Abstract: Interconnections interconnecting terminals to be connected by routings are dissolved into two-terminal interconnections and it is determined to which kind of terminals the terminals of each two-terminal interconnection belong, among connected diffusion layer, separated diffusion layer and gate. The interconnections are classified into groups by the combination of the kind of two terminals for each interconnection. The respective groups of interconnections are routed in the channel on the field effect transistor row according to a predetermined order of groups.

Abstract: Plural pairs of complementary data lines coupled with plural memory cells are precharged to a positive source voltage level and a pair of common complementary data lines corresponding to the plural pairs of complementary data lines are precharged to ground potential. In synchronism with selection of a word line, a pair of the plural pairs of complementary data lines and the common complementary data lines are coupled through a switch circuit. A sense amplifier coupled with the common complementary data lines is supplied with a voltage composed of a voltage of approximately half the voltage value of the positive supply voltage and a readout voltage from the memory cell superposed thereon. Thus, after the precharging operation, there is no need for an equalizing operation before a word line is selected. Therefore, high-speed reading can be achieved.

Abstract: A semiconductor memory device includes an input circuit and an output circuit. To prevent the erroneous operation of the input circuit by the noise which develops at the time of the change of the output signal of the output circuit, the threshold voltage of the input circuit is changed, or an internal signal generated by the internal circuit is fixed to a predetermined level. In an output circuit having a tri-state output function, the threshold voltage of the input circuit is changed when the output is brought into the high impedance state, or the internal signal generated by the input circuit is fixed to a predetermined state. Using these arrangements it is possible to prevent the erroneous operation of the input circuit by the noise occurring when the output is brought into the high impedance state.

Abstract: An echo suppressor for a communication system wherein a signal sent to a transmitting line is returned to a receiving line with some delay. The suppressor comprises an attenuator for attenuating the amplitude of a received speech signal. The transmitting speech signal amplitude level is compared to the amplitude of a receiving speech signal, and according to the result obtained, a signal for controlling the signal attenuation of the attenuator is generated. The delay time, until the attenuation control signal operates on the attenuator according to a change in the amplitude level of the receiving speech signal, is controlled. The controlled delay time is normally held at a predetermined maximum value, and is minimized when a change in amplitude of the receiving speech signal indicates a beginning of speech. Thus, an echo of the speech uttered by a near end user can be suppressed without impairing a beginning of the speech signal uttered by a far end user.

Abstract: A semiconductor memory is provided in which a column decoder is used commonly for the random input and output and the serial input/output by providing both a signal path for transmitting signals in parallel to the data lines of a memory array and a latch circuit and a switch path for connecting said latch circuit and a serial input/output common data line in response to a selection signal generated by a shift register, and by feeding the output signal of a random input/output column decoder as an initial value to the individual bits of said shift register.

Abstract: A semiconductor memory having a memory array, a first and a second selection line which are connected to a memory cell, and a selection means which selects either one of the selection lines. The selection means includes a selection circuit which optionally selects the first selection line or the second selection line when an address signal corresponding to the first selection line is aligned with a predetermined address signal.

Abstract: In duplicated equipment including main equipment, duplicated subordinate equipment, and a communication line for transferring data between the main equipment and the duplicated subordinate equipment and for sending a changeover signal which can put one and the other of a pair of subordinate devices making up the duplicated subordinate equipment in an active state and a standby state, respectively, from the main equipment to the duplicated subordinate equipment, each of the subordinate devices includes means for putting the other subordinate device in the standby state, to prevent both of the subordinate devices from being put in the active state when a failure occurs on a transmission path between the communication line and one of the subordinate devices.

Abstract: An A/D converter apparatus comprises: a sampling signal generating means to generate an oversampling signal and an internal sampling signal; a converter means to convert an input analog signal into a digital signal in synchronism with the oversampling signal; and a decimator means to perform a specified decimation on the digital signal in synchronism with the internal sampling signal; whereby the sampling signal generating means maintains the frequencies of the oversampling signal and the internal sampling signal in a specified relationship.

Abstract: The partial differential equations inputted with respect to an unknown quantity A are processed according to the finite element method in which simultaneous first-order equations equivalent to the partial differential equations are obtained, and then a matrix equation equivalent to the simultaneous first-order equations, namely, (k.sub.ij) (a.sub.i)=(d.sub.i) is processed to derive a coefficient {a.sub.j } so as to generate a program which calculates the unknown quantity A. For each group of a plurality of elements, the program calculates a contribution determined by the positions of the nodes associated with the elements with respect to a portion of matrix element group such as k.sub.lm and k.sub.ll and a portion of constant group such as d.sub.l and d.sub.m determined by the numbers assigned to a plurality of nodes contained in the group of a plurality of elements and then generates the final values of the matrix element group {k.sub.ij } and the constant {d.sub.

Abstract: This invention relates to an information processing apparatus such as a digital signal processor and is applied particularly suitably to a digital filter.A plurality of data from initial value data till final value data relating to filtering coefficients of a digital filter are stored in a data memory, and are sequentially read out by an increment operation of an address arithmetic unit.A data arithmetic unit executes sequentially product and/or sum operations of a plurality of data that are sequentially read out and digital input signals that are sequentially inputted, to perform digital signal processing.The information processing apparatus is equipped particularly with means, which when an access address starts from an initial value, exceeds a final value and reaches a return address due to the increment operation, returns automatically the access address to the initial value. Therefore, a plurality of data stored in the data memory can be utilized repeatedly.

Abstract: A dynamic RAM is provided in which an output voltage of a booster circuit for forming a word line selection timing signal is rendered greater than a power source potential and less than a predetermined potential by providing voltage limitation means, thereby preventing destruction of circuit elements receiving the output voltage.

Abstract: A mask-programmed ROM includes depletion type load MOSFETs provided between data lines in a memory array and a power supply voltage, the MOSFETs having a ground potential of the circuit applied to their gates. Reading of data is carried out by an amplifying MOSFET which supplies a current to a selected data line through a depletion type MOSFET which is supplied at its gate with the circuit ground potential. Thus, bias voltages which are respectively applied to the data lines and a sense amplifier which receives a signal read out from a selected data line are made equal to each other, thereby achieving a high-speed read operation.

Abstract: A semiconductor memory incorporating an ECC circuit includes a memory array, means for selecting a plurality of bits which are to be simultaneously output to the outside of the IC from a plurality of bits which are simultaneously read out from the memory array, and an error correcting circuit which constitutes the ECC circuit. The selecting means is provided in a stage previous to the error correcting circuit. In consequence, it is possible to reduce the number of bits of a signal which need to be simultaneously processed by the error correcting circuit. Accordingly, the size of the ECC circuit can be reduced.