Abstract: A complementary bipolar semiconductor device (CBi semiconductor device) comprising a substrate of a first conductivity type, active bipolar transistor regions in the substrate, in which the base, emitter and collector of vertical bipolar transistors are arranged, vertical epitaxial-base npn bipolar transistors in a first subset of the active bipolar transistor regions, vertical epitaxial-base pnp bipolar transistors in a second subset of the active bipolar transistor regions, collector contact regions which are respectively arranged adjoining an active bipolar transistor region, and shallow field insulation regions which respectively laterally delimit the active bipolar transistor regions and the collector contact regions, wherein arranged between the first or the second or both the first and also the second subset of active bipolar transistor regions on the one hand and the adjoining collector contact regions on the other hand is a respective shallow field insulation region of a first type with a first depth

Abstract: A parallel digital-analog converter for the conversion of a plurality of differential digital input signals into a differential analog output signal, including a group of 1-bit digital-analog converters (200) which respectively include an intermediate storage cell (202) and a current cell (201) and which are adapted to feed a respective output current to a first (204) or a second output contact (206) in dependence on a logic state of the intermediate storage cell, wherein a first of two outputs of an intermediate storage cell (202) is connected by way of an input resistor (220) to a first signal terminal (208.1) of a first transistor (208) and a second of the two outputs of the intermediate storage cell (202) is connected by way of an input resistor (218) to a first signal terminal (210.

Abstract: A vertical heterobipolar transistor comprising a substrate of semiconductor material of a first conductivity type and an insulation region provided therein, a first semiconductor electrode arranged in an opening of the insulation region and comprising monocrystalline semiconductor material of a second conductivity type, which is either in the form of a collector or an emitter, and which has a first heightwise portion and an adjoining second heightwise portion which is further away from the substrate interior in a heightwise direction, wherein only the first heightwise portion is enclosed by the insulation region in lateral directions perpendicular to the heightwise direction, a second semiconductor electrode of semiconductor material of the second conductivity type, which is in the form of the other type of semiconductor electrode, a base of monocrystalline semiconductor material of the first conductivity type, and a base connection region having a monocrystalline portion which in a lateral direction laterall

Abstract: A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

Abstract: A complementary BiCMOS semiconductor device comprises a substrate of a first conductivity type and a number of active regions which are provided therein and which are delimited in the lateral direction by shallow field insulation regions, in which vertical npn-bipolar transistors with an epitaxial base are arranged in a first subnumber of the active regions and vertical pnp-bipolar transistors with an epitaxial base are arranged in a second subnumber of the active regions, wherein either one transistor type or both transistor types have both a collector region and also a collector contact region in one and the same respective active region. To improve the high-frequency properties exclusively in a first transistor type in which the conductivity type of the substrate is identical to that of the collector region, an insulation doping region is provided between the collector region and the substrate.

Abstract: An MEMS component including a monolithically integrated electronic component with a multi-plane conductor track layer stack which is arranged on a substrate and into which is integrated a cantilevered elastically movable metallic actuator which is arranged in the multi-plane conductor track layer stack at the level of a conductor track plane and is connected by via contacts to conductor track planes which are arranged thereabove or therebeneath and which apart from an opening in the region of the actuator are separated from the conductor track plane of the actuator by a respective intermediate plane insulator layer, wherein the actuator is formed from a metallically conductive layer or layer combination which is resistant to corrosive liquids or gases and which contains titanium nitride or consists of titanium nitride.

Abstract: A bipolar transistor has a base with an epitaxial base layer and a raised base connection region which in a lateral direction in parallel relationship with the substrate surface encloses the emitter which is surrounded by a spacer of insulating material. The epitaxial base layer is raised in a heightwise direction perpendicularly to the substrate surface. An emitter of a T-shaped cross-sectional profile is separated laterally from the outer base portion by a spacer of insulating material. Its vertical bar of the T-shape adjoins with its lower end the inner base portion.

Abstract: A chip arrangement comprising a first chip having at least one first signal interface with first coupling elements arranged along a first line in a first number density and at least one second chip with at least one second signal interface with second coupling elements arranged along a second line in a second number density, where the first and second coupling elements permit contactless signal transmission between the first and second signal interfaces, where the two chips are so arranged relative to each other that coupling elements of the first and second signal interfaces can contactlessly transmit signals with each other, where the longitudinal extent of at least one of the signal interfaces along the line associated therewith is greater than the length of the overlap of the two longitudinal extents, and where one of the signal interfaces has a greater number density of coupling elements than the other.

Abstract: The invention concerns an electronic circuit comprising a sigma-delta modulator and a power amplifier connected downstream thereof, wherein there is provided a feedback circuit (207) which is coupled between an output of the sigma-delta modulator and an input of the sigma-delta modulator and which includes an emulation of the signal path between the output of the sigma-delta modulator and the output of a power amplifier (107) connected downstream of said sigma-delta modulator.

Abstract: A CORDIC unit for the iterative approximation of a vector rotation through a rotary angle ? by a number of elementary rotations through elementary angles ?i, including elementary rotation stages for respectively affecting an elementary rotation through an elementary angle ?i as an iteration step in the iterative approximation. After such an elementary rotation there remains a residual angle through which rotation is still to be affected. The elementary rotation stages of the CORDIC unit are adapted for rotation through elementary angles ?i given by powers of two with a negative integral exponent. The CORDIC unit can also include a triggering device for triggering the elementary rotations, a triggering device which is adapted prior to each iteration step to compare the residual angle to at least one of the elementary angles and to omit those elementary rotation stages whose elementary angles are greater than the residual angle.

Abstract: The IEEE 802.11a standard uses OFDM, where the transmission is divided into several orthogonal sub-carriers. Here, an algorithm is used for the frame detection; a simplified differentiator obtains an absolute maximum in the differentiated signal at that point where the first plateau in JF(k) starts; a peak detector obtains the position of the absolute maximum in the differentiated signal, divides the problem into relative peak detection and falling edge detection; a simplified XNOR-based crosscorrelator is used, where the simplifications are based on the knowledge of the reference; a particular solution is provided for the CORDIC algorithm in the vectoring mode for arctangent calculation; hardware structuring is presented for the whole synchronizer so as to obtain a simple control mechanism and the separation of this structure into different clock domains, each one being activated only to perform its operation and deactivated afterwards.

Abstract: The invention relates to layers in substrate wafers. The aim of the invention is to provide layers in substrate wafers with which the drawbacks of conventional assemblies are overcome in order to achieve, on the one hand, an adequate resistance to latch-up in highly scaled, digital CMOS circuits with comparatively low costs and, on the other hand, to ensure low substrate losses/couplings for analog high-frequency circuits and, in addition, to influence the component behavior in a non-destructive manner.

Abstract: A method of reducing a phase error caused by a plurality of error sources in a signal in the form of a sequence of a plurality of digital partial signals associated with a number of subcarriers (k) of a carrier, the method including, for each partial signal: equalization of the partial signal (Y(i,k)), estimation of the phase error of the equalized partial signal (X(i,k)), and correction of the estimated phase error of the equalized partial signal. One embodiment provides the equalization with elimination of an accumulation of a phase error over the sequence of the partial signals. In addition the estimation includes detecting a plurality of predetermined pilot signals and determining a phase correction factor on the basis of the detected pilot signals, with at least one multiplication operation carried out solely by means of shift and adding operations. A corresponding apparatus is also described.

Abstract: The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the silicon-bearing layer and the praseodymium oxide layer and containing silicon, praseodymium and oxygen. It is possible because of the mixed oxide layer on the one hand to improve the capacitance of the component and on the other hand to achieve a high level of charge carrier mobility without the necessity for a silicon oxide intermediate layer.

Abstract: The invention concerns an asynchronous wrapper for a globally asynchronous, locally synchronous circuit. The asynchronous wrapper operates with a request signal-driven clock control, supplemented by a local clock unit in the absence of request signals. It has at least one input unit which is adapted to receive a request signal from outside and to indicate to the outside the reception of the request signal by the delivery of an associated acknowledgement signal, and a pausable clock unit which is adapted to repeatedly produce a first clock signal and to deliver it to an internally synchronous circuit block associated with the asynchronous wrapper. The input unit is adapted to produce, if a request signal is applied, a second clock signal which is in a defined time relationship with the request signal and to deliver it to the internally synchronous circuit block.

Abstract: The semiconductor device according to the invention includes a substrate, a field insulating region which delimits an active region of the semiconductor substrate, a collector, at least one collector contact region associated with the collector, and a base with an associated base connection region. The collector and the collector contact region are formed in the same active region. In addition the base connection region extends partially over the active region and is separated from the surface of the active region by an insulator layer.

Abstract: The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

Abstract: A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low ‘on’ resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the low doped drain region LDDR (22, 26) of the transistor is a doping zone (24) which is shallow in comparison with the penetration depth of the source/drain region (3, 5), of inverted conductivity type to the LDDR (22, 26) (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR (22, 26) and does not exceed a nett doping of 8E12 At/cm2.

Abstract: A chip arrangement comprising a first chip having at least one first signal interface with first coupling elements arranged along a first line in a first number density and at least one second chip with at least one second signal interface with second coupling elements arranged along a second line in a second number density, where the first and second coupling elements permit contactless signal transmission between the first and second signal interfaces, where the two chips are so arranged relative to each other that coupling elements of the first and second signal interfaces can contactlessly transmit signals with each other, where the longitudinal extent of at least one of the signal interfaces along the line associated therewith is greater than the length of the overlap of the two longitudinal extents, and where one of the signal interfaces has a greater number density of coupling elements than the other.

Abstract: The invention relates to a method for producing high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip. In order to produce these high-speed vertical npn bipolar transistors and complementary MOS transistors on a chip, all technological method steps for producing the vertical structure of the collector, base and emitter in the active region of the npn bipolar transistors as well as for laterally structuring the collector regions, base regions and emitter regions are performed before the troughs and the gate insulating layer for the MOS transistors are produced.