Abstract: Example embodiments relate to multilayer integrated photonic structures. An example multilayer integrated photonic structure includes a propagation region formed in a first photonic layer. The propagation region includes a plurality of waveguides and a slab region in which the plurality of waveguides terminates. The multilayer integrated photonic structure also includes an outcoupling structure formed in a second photonic layer on top of the first photonic layer. The outcoupling structure is configured to couple light into and out of the multilayer integrated photonic structure. Additionally, the multilayer integrated photonic structure includes a reflector configured to optically couple the slab region of the first photonic layer and the second photonic layer. The reflector includes a first reflector element included in the slab region of the first photonic layer and a second reflector element included in the second photonic layer.

Abstract: The present disclosure relates to memory devices, in particular, flash memory devices, storage class memory (SCM) devices or dynamic random access memory (DRAM) devices. The disclosure provides a memory device with a ferroelectric trapping layer. In particular, a memory cell for the memory device comprises a layer stack including: a semiconductor layer; a tunnel layer provided directly on the semiconductor layer; a ferroelectric trapping layer provided directly on the tunnel layer; and a conductive gate layer provided directly on the ferroelectric trapping layer. A blocking layer between the ferroelectric trapping layer and the gate layer may be omitted.

Abstract: A semiconductor cell culture device for three-dimensional cell culture comprises: a semiconductor material layer in which a cell culture portion of semiconductor material is defined, wherein the cell culture portion defines an area within the semiconductor material layer surrounded by semiconductor material, wherein the cell culture portion comprises a mesh structure having island structures being interconnected by bridge structures and defining through-pores between the island structures allowing for selective transport of cell constructs, cellular components, proteins or other large molecules through the semiconductor material layer and on opposite sides of the cell culture portion in the semiconductor material layer, and a supporting structure connected to the cell culture portion.

Abstract: The disclosure relates to a method for etching a molybdenum feature, comprising the steps of: a) oxidizing a thickness portion of the molybdenum feature using a thermal oxidation process to form a thermal molybdenum oxide layer, and b) dissolving the thermal molybdenum oxide layer using a wet chemistry.

Abstract: A radiation carrier for carrying at least a radiation beam has, on a surface thereof, at least one excitation grating, for directing at least an excitation radiation beam directionally out of the radiation carrier, thereby illuminating a region of interest; and at least one structure for redirecting emission radiation emanating from the region of interest. Further a sensor is provided comprising at least one such radiation carrier and at least one detector, the structure being adapted for redirecting radiation from the region of interest into the at least one detector.

Abstract: An illumination system and method for illumination of a sample in a container is described herein. In some embodiments, the container includes a defined volume for receiving the sample. The illumination system includes, in some embodiments, at least one light source, a mask comprising an opaque portion, preventing light from passing through the mask, and an at least partially transparent portion, allowing light to pass through the mask. The illumination system can be adapted to be positioned such that the light generated by the light source, passing through the mask, illuminates the sample in the container. The light source and the mask are configured such that a shape, a size, and a position of a projection of the light passing through the mask, onto a plane of a bottom surface of the container, match a shape, a size, and a position of the bottom surface.

Abstract: A method of radar ranging comprises transmitting a digitally-modulated signal comprising successively in time, for each sequence in a plurality N of sequences, a plurality M+1 of repeats of said sequence, wherein each said sequence consists of a plurality Lc of digitally-modulated chips, wherein at least one sequence in the plurality of sequences is different from another sequence in said plurality of sequences; receiving a version of the digitally-modulated signal reflected scattered by one or more physical targets; for each sequence in the plurality of sequences, performing a preliminary target estimation; and using each said preliminary target estimation for all sequences in the plurality of sequences, performing a final target estimation.

Abstract: A method is provided for facilitating radar detection robust to IQ imbalance. The method comprises the step of generating a radar signal in digital domain comprising a number of M periodic repetitions of a code sequence with a length Lc, multiplied with a progressive phase rotation e j · ? K · n , where Lc and M are integers, K is an integer or a non-integer, and n is a discrete integer variable. The method further comprises the step of generating a process input signal in digital domain from a reflection signal corresponding to the radar signal by multiplying the reflection signal with a progressive phase rotation e - j · ? K · n . In this context, K is defined such that a ratio Lc K is a non-integer, and M is defined such that a ratio Lc · M K is an integer.

Abstract: According to an aspect of the present inventive concept there is provided a qubit device comprising: a semiconductor substrate layer; a set of control gates configured to define a row of electrostatically confined quantum dots along the substrate layer, each quantum dot being suitable for holding a qubit; and a set of nanomagnets arranged in a row over the substrate layer such that a nanomagnet is arranged above every other quantum dot of the row of quantum dots, wherein each nanomagnet has an out-of-plane magnetization with respect to the substrate layer and wherein every other quantum dot is subjected to an out-of-plane magnetic field generated by a respective nanomagnet, such that a qubit spin resonance frequency of every other quantum dot is shifted with respect to an adjacent quantum dot of the row of quantum dots.

Abstract: Augmented reality method comprising: receiving continuously from a SLAM system in an HMD SLAM data and performing a SLAM tracking; performing an IR object tracking comprising at each IR iteration of the IR object tracking; and displaying at each IR iteration an AR visualization on an AR display in the HMD such that the AR visualization appears on an AR position or an AR pose in the world coordinate system depending on the pose of the object in the world coordinate system of the current IR iteration.

Abstract: A method of generating an impulse for impulse radio transmission signals and an impulse-radio ultra-wideband transmitter are provided. In one aspect, the method includes distributing input digital data according to time information data and amplitude information data along a first modulation path and a second modulation path, respectively. Pulse position modulation is performed based on the time information data along the first modulation path to define a timing position of the impulse. Pulse amplitude modulation is performed based on the amplitude information data along the second modulation path to define an envelope of the impulse. The input digital data can be distributed according to phase information data along a third modulation path, and phase shift keying modulation can be performed based on the phase information data along the third modulation path to define a phase of a carrier signal of the impulse.

Abstract: A temperature compensation method for wavelength monitoring using spectrometers on photonic integrated chips and a related temperature-compensated wavelength monitoring device include an optical filter of the chip filters a source signal to provide at least one spectral reference line to a first spectrometer to detect thermal wavelength drifts thereof. At least one spectral line to be monitored is received by the same or another spectrometer of the chip to detect wavelength shifts thereof. The detected thermal drift of the reference line is compared to calibrated thermal drifts for the reference line which is associated with a calibrated thermal drift for the spectral response curve of the spectrometer receiving the spectral line to be monitored. A thermal drift rate for the response curve of the optical filter differs from a thermal drift rate for the response curve of the first spectrometer at least by an amount.

Abstract: A Microelectromechanical Systems (MEMS) device combining a MEMS layer and a Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuit (IC), and its fabrication method is provided. The fabrication method includes: processing the MEMS layer on a first semiconductor substrate, the MEMS layer including one or more movable structures and one or more anchor structures; processing one or more first contacts on the first semiconductor substrate, each first contact being processed into one of the anchor structures and being configured to bias that anchor structure; processing the CMOS IC on a second semiconductor substrate; processing one or more second contacts on the second semiconductor substrate, each second contact being connected to the CMOS IC; and bonding the first semiconductor substrate to the second semiconductor substrate such that each first contact directly contacts one of the second contacts. The method can allow fabricating the MEMS device without vapor HF etching.

Abstract: In some embodiments, a method for controlling an artificial iris may include receiving a measurement of light intensity detected by a sensor on or adjacent to the artificial iris. The method may include accessing a user-specific profile based on user calibration for determining one or more user-specific thresholds of light intensity of the user-specific profile. The one or more user-specific thresholds are associated with light intensities for triggering a change of light transmittance through the artificial iris. The method may include comparing the received measurement of light intensity to the one or more thresholds in the user-specific profile. The method may include determining, based on the comparing, whether to turn on or turn off one or more concentric rings of liquid crystals of the artificial iris for controlling an amount of light transmitted through the artificial iris.

Abstract: A method for improving a bias temperature instability of a SiO2 layer comprises exposing the SiO2 layer to atomic hydrogen.

Abstract: The present invention provides an apparatus for detecting photoluminescent light emitted from a sample, said apparatus (200; 300) comprising at least one light source (210; 310, 318), which is configured to emit light of a first and a second wavelength towards a sample comprising photoluminescent particles, wherein said first wavelength is an excitation wavelength for inducing photoluminescent light from said photoluminescent particles, and wherein said second wavelength is longer than said first wavelength and for gathering background noise information from said sample.

Abstract: A method includes providing a semiconductor structure including: a substrate; a layer stack with each layer of the layer stack including a Group III-nitride material; and a p-type doped GaN layer on the layer stack. The method also includes providing, on the GaN layer, a metal bi-layer including a first metal layer in contact with GaN layer and a second metal layer on the first metal layer and having a lower sheet resistance than the first metal layer. The method also includes performing a patterning process upon the metal bi-layer and the p-type doped GaN layer such that a first periphery of the first metal layer is aligned to a second periphery of the second metal layer and such that a first cross section of the metal bi-layer is smaller than a second cross section of the GaN layer parallel to the first cross section.

Abstract: Example embodiments relate to counteracting semiconductor material loss during semiconductor structure formation. One embodiment includes a method for forming a semiconductor structure. The method includes providing a structure. The structure includes a substrate. The structure also includes a layer stack on the substrate. The layer stack includes at least one semiconductor layer of a semiconductor material and at least one sacrificial layer under the semiconductor layer. Further, the structure includes a trench through the layer stack. The further also includes forming a recess in the layer stack by etching a portion of the sacrificial layer exposed by the trench. The etching includes a preferential etch of the sacrificial layer with respect to the semiconductor layer. Additionally, the method includes epitaxially growing a liner of the semiconductor material onto surfaces of the semiconductor layer exposed by the trench.

Abstract: According to an aspect there is provided a method for automatic maintenance of a dialysis system. The dialysis system includes a plurality of filter sections where each filter section includes a blood flow channel, a dialysate flow channel, and a membrane separating the blood flow channel from the dialysate flow channel and having a plurality of pores through which substances are exchanged between a blood flow in the blood flow channel and a dialysate flow in the dialysate flow channel. The method includes determining, for each filter section of the plurality of filter sections, whether a maintenance criterion is fulfilled. The method also includes triggering a maintenance event for a filter section of the plurality of filter sections for which the maintenance criterion is fulfilled. The method also includes executing the maintenance event and optionally administering a thrombolytic agent to the blood flow channel of the filter section.

Abstract: A cyclic capillary electrophoresis device includes a capillary channel that forms a closed loop. The capillary channel comprises an inner half facing toward a space enclosed by the loop, where the inner half having an inner wall of first charge density, and an outer half facing away from the space enclosed by the loop, where the outer half having an inner wall surface of second charge density. A difference between the first and the second charge densities exists or can be turned on. The difference is configured to create a smaller average electroosmotic flow velocity in the inner half than in the outer half.