Abstract: A method for calibrating an image sensor begins by illuminating a portion of the image sensor with an input light spectrum, where the input light spectrum includes light of known wavelength and intensity. The method continues by sampling an output for each optical sensor of the image sensor, where each optical sensor is associated with one or more optical filters and where each optical filter being associated with a group of optical filters of a plurality of groups of optical filters. Each optical filter of a group of optical filters is configured to pass light in a different wavelength range and at least some optical filters in different groups of the plurality of groups of optical filters are configured to pass light in substantially a same wavelength range.

Abstract: A method for calibrating an image sensor begins by illuminating a portion of the image sensor with an input light spectrum, where the input light spectrum includes light of known wavelength and intensity. The method continues by sampling an output for each optical sensor of the image sensor, where each optical sensor is associated with one or more optical filters and where each optical filter being associated with a group of optical filters of a plurality of groups of optical filters. Each optical filter of a group of optical filters is configured to pass light in a different wavelength range and at least some optical filters in different groups of the plurality of groups of optical filters are configured to pass light in substantially a same wavelength range.

Abstract: An integrated circuit for an imaging system is disclosed. In one aspect, an integrated circuit has an array of optical sensors, an array of optical filters integrated with the sensors and configured to pass a band of wavelengths onto one or more of the sensors, and read out circuitry to read out pixel values from the sensors to represent an image. Different ones of the optical filters are configured to have a different thickness, to pass different bands of wavelengths by means of interference, and to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non-monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract: An integrated circuit for an imaging system is disclosed. In one aspect, an integrated circuit has an array of optical sensors, an array of optical filters integrated with the sensors and configured to pass a band of wavelengths onto one or more of the sensors, and read out circuitry to read out pixel values from the sensors to represent an image. Different ones of the optical filters are configured to have a different thickness, to pass different bands of wavelengths by means of interference, and to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non-monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract: A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light transmission. The method includes (a) growing the transmission layer of a III-V type material, (b) providing a mask layer on the transmission layer, the mask layer leaving first portions of the transmission layer exposed, and (c) partially decomposing the first exposed portions of the transmission layer. Suitably redeposition occurs in a single step with decomposition, so as to obtain a textured surface based on crystal facets of a plurality of grown crystals. The resulting device has a light-emitting element. The transmission layer hereof is suitably present at the top side.

Abstract: Disclosed are methods and mask structures for epitaxially growing substantially defect-free semiconductor material. In some embodiments, mask structure includes a first level defining a first trench extending through the first level, wherein a bottom of the first trench is defined by a semiconductor substrate, and a second level on top of the first level, wherein the second level defines a plurality of second trenches positioned at a non-zero angle with respect to the first trench.

Abstract: Provided herein is a method for producing hollow contact areas for insertion bonding, formed on a semiconductor substrate comprising a stack of one or more metallization layers on a surface of the substrate. Openings are etched in a dielectric layer by plasma etching, using a resist layer as a mask. The resist layer and plasma etch parameters are chosen to obtain openings with sloped sidewalls having a pre-defined slope, due to controlled formation of a polymer layer forming on the sidewalls of the resist hole and the hollow contact opening formed during etching. According to a preferred embodiment, metal deposited in the hollow contact areas and on top of the dielectric layer is planarized using chemical mechanical polishing, leading to mutually isolated contact areas. The disclosure is also related to components obtainable by the method and to a semiconductor package comprising such components.

Abstract: The present invention relates to a method for fabricating a semiconductor device for stimulation and/or data recording of biological material to a such semiconductor device. The method comprises providing a semiconductor substrate comprising a first insulating layer; providing a patterned conductive layer on top of the first insulating layer; depositing and patterning a second insulating layer atop the patterned conductive layer; growing carbon nano-sheets atop the second insulating layer; and defining carbon nano-sheet electrode areas on the second insulating layer by etching away the carbon nano-sheets outside of the carbon nano-sheet electrode areas.

Abstract: A method is disclosed for packaging a device, e.g., for bio-medical applications. In one aspect, the method includes obtaining a component on a substrate and separating the component and a first part of the substrate from a second part of the substrate using at least one physical process inducing at least one sloped side wall on the first part of the substrate. The method also includes providing an encapsulation for the chip. The resulting packaged chip advantageously has a good step coverage resulting in a good hermeticity, less sharp edges resulting in a reduced risk of damaging or infection after implantation and has a relatively small packaged volume compared to conventional big box packaging techniques.

Abstract: An integrated circuit for an imaging system is disclosed. In one aspect, an integrated circuit has an array of optical sensors, an array of optical filters integrated with the sensors and configured to pass a band of wavelengths onto one or more of the sensors, and read out circuitry to read out pixel values from the sensors to represent an image. Different ones of the optical filters are configured to have a different thickness, to pass different bands of wavelengths by means of interference, and to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non-monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract: The present disclosure relates generally to Hf-comprising materials for use in, for example, the insulator of a RRAM device, and to methods for making such materials. In one aspect, the disclosure provides a method for the manufacture of a layer of material over a substrate, said method including a) providing a substrate, and b) depositing a layer of material on said substrate via ALD at a temperature of from 250 to 500° C., said depositing step comprising: at least one HfX4 pulse, and at least one trimethyl-aluminum (TMA) pulse, wherein X is a halogen selected from Cl, Br, I and F and is preferably Cl.

Abstract: The disclosed technology relates generally to a semiconductor device package comprising a metal-insulator-metal capacitor (MIMCAP). In one aspect, the MIMCAP comprises portions of a first and second metallization layers in a stack of metallization layers, e.g., copper metallization layers formed by single damascene processes. The MIMCAP comprises a bottom plate formed in the first metallization layer, a first conductive layer on and in electrical contact with the bottom plate, a dielectric layer on and in contact with the first conductive layer, a second conductive layer on and in contact with the dielectric layer, and a top plate formed in the second metallization layer, on and in electrical contact with the second metal plate. The electrical contacts to the bottom and top plates of the MIMCAP formed in the first and second metallization layer are thereby established without forming separate vias between the plates and the metallization layers.

Abstract: In an aspect of the disclosure, a stimulation device includes a probe attached to a first support. The probe includes at least one grating coupler for coupling light into the probe. The device further includes at least one optical source for providing an optical stimulation signal mounted on a second support, and at least one means for detachably attaching the first support to the second support. The position of the at least one optical source is aligned with the position of the at least one grating coupler to allow light emitted from the at least one optical source to be received by the at least one grating coupler.

Abstract: An integrated circuit for an imaging system is disclosed. In one aspect, an integrated circuit has an array of optical sensors, an array of optical filters integrated with the sensors and configured to pass a band of wavelengths onto one or more of the sensors, and read out circuitry to read out pixel values from the sensors to represent an image. Different ones of the optical filters are configured to have a different thickness, to pass different bands of wavelengths by means of interference, and to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non-monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract: Disclosed is a method for imaging brain activity from a set of ultrasound images I(t) of blood in a brain, wherein a measured spectrum s(P,t,?) is computed at each point P of the ultrasound images, a reference spectrum s(P,?) is determined at each point P, based on measured spectrums at point P, the reference spectrogram having a high frequency edge decaying in a frequency ?min(P) to ?max(P), and a differential intensity is computed as: dI(P,t)=??min(P)?max(P)A(P,?)[s(P,t,?)?s(P,?)]d? wherein A(P,?) is a positive weighting function.

Abstract: A microcomputer comprising a microprocessor unit and a first memory unit is disclosed. In one aspect, the microprocessor unit comprises at least one functional unit and at least one register. Further, the at least one register is a wide register comprising a plurality of second memory units which are capable to each contain one word, the wide register being adapted so that the second memory units are simultaneously accessible by the first memory unit, and at least part of the second memory units are separately accessible by the at least one functional unit. Further, the first memory unit is an embedded non-volatile memory unit.

Abstract: The present invention provides a resistive memory array arranged in a 3D stack comprising a plurality of resistivity switching memory elements laid out in an array in a first and second direction, and stacked in a third direction, a plurality of first electrodes and a plurality of second electrodes extending in the first direction, each first electrode and each second electrode being associated with the at least one resistivity switching memory element, and a plurality of transistor devices, each transistor device being electrically coupled to one of the resistivity switching memory elements, an inversion or accumulation channel of a transistor device being adapted for forming a switchable resistivity path in the third direction, between the electrically coupled resistivity switching memory element and the associated second electrode, wherein the memory array furthermore comprises at least one third electrode provided in a trench through the stack.

Abstract: A microcomputer comprising a microprocessor unit and a first memory unit is disclosed. In one aspect, the microprocessor unit comprises at least one functional unit and at least one register. Further, the at least one register is a wide register comprising a plurality of second memory units which are capable to each contain one word, the wide register being adapted so that the second memory units are simultaneously accessible by the first memory unit, and at least part of the second memory units are separately accessible by the at least one functional unit. Further, the first memory unit is an embedded non-volatile memory unit.

Abstract: A system (100) is described for characterizing and/or manipulating molecules. The system may especially be suitable for biological molecules, although the invention is not limited thereto. The system (100) comprises a substrate (110) comprising a nanostructure (120) being suitable for translocation of molecules through the nanostructure (120). It furthermore comprises a means (210) for translocating molecules through the nanostructure (120) and a plasmonic force field generating means (130) adapted for influencing the translocation speed of the particle by applying a plasmonic force field at the nanostructure (120). A corresponding method also is described.

Abstract: A spectral camera for producing a spectral output is disclosed. The spectral camera has an objective lens for producing an image, a mosaic of filters for passing different bands of the optical spectrum, and a sensor array arranged to detect pixels of the image at the different bands passed by the filters, wherein for each of the pixels, the sensor array has a cluster of sensor elements for detecting the different bands, and the mosaic has a corresponding cluster of filters of different bands, integrated on the sensor element so that the image can be detected simultaneously at the different bands. Further, the filters are first order Fabry-Perot filters, which can give any desired passband to give high spectral definition. Cross talk can be reduced since there is no longer a parasitic cavity.