Abstract: A circuit for optoelectronic down-conversion of a terahertz, THz, signal comprises a first photodiode and a second photodiode configured to be excited by an optical beat signal. The photodiodes are coupled in series through a common antenna. The terminals of the antenna are coupled to form an output terminal and the antenna is configured to receive the terahertz, THz, signal. The photodiodes thereby, via the optical beat signal, respectively, down-convert the THz signal and generate a current comprising an intermediate frequency, IF, component and a direct current, DC, component. The respective generated currents are summed at the output terminal, thereby obtaining the IF components and cancelling the DC components.

Abstract: The disclosed technology relates generally to the field of magnetic devices, in particular to magnetic memory devices or logic devices. The disclosed technology presents a magnetic structure for a magnetic device, wherein the magnetic structure comprises a magnetic reference layer (RL); a spacer provided on the magnetic RL, the spacer comprising a first texture breaking layer provided on the magnetic RL, a magnetic bridge layer provided on the first texture breaking layer, and a second texture breaking layer provided on the magnetic bridge layer. Further, the magnetic structure comprising a magnetic pinned layer (PL) or hard layer (HL) provided on the spacer, wherein the magnetic RL and the magnetic PL or HL are magnetically coupled across the spacer through direct exchange interaction.

Abstract: A method of bonding semiconductor components is described. In one aspect a first component, for example a semiconductor die, is bonded to a second component, for example a semiconductor wafer or another die, by direct metal-metal bonds between metal bumps on one component and corresponding bumps or contact pads on the other component. In addition, a number of solder bumps are provided on one of the components, and corresponding contact areas on the other component, and fast solidified solder connections are established between the solder bumps and the corresponding contact areas, without realizing the metal-metal bonds. The latter metal-metal bonds are established in a heating step performed after the soldering step. This enables a fast bonding process applied to multiple dies bonded on different areas of the wafer and/or stacked one on top of the other, followed by a single heating step for realizing metal-metal bonds between the respective dies and the wafer or between multiple stacked dies.

Abstract: A method of generating ultrasound by driving an array of ultrasonic transducers comprises a charge transfer procedure. The charge transfer procedure comprises switching a terminal of a first ultrasonic transducer of the array, at a first electric potential, to a charge distribution bus; switching a terminal of a second ultrasonic transducer of the array, at a second electric potential different than the first potential, to the charge distribution bus; and allowing charge to flow between the first ultrasonic transducer and the second ultrasonic transducer through the charge distribution bus.

Abstract: A sign switching circuitry is disclosed. In one aspect, the sign switching circuitry includes a first and second differential common-source amplifier having common differential input nodes and common differential output nodes configured such that a differential input signal applied at the common differential input nodes is amplified to a differential output signal at the common differential output nodes with a fixed gain by the first amplifier and by the fixed gain with opposite sign by the second amplifier. The sign switching circuitry also includes a switching circuitry configured to activate the first common-source amplifier and deactivate the second common-source amplifier to amplify the differential input signal by the fixed gain, and to activate the second common-source amplifier and deactivate the first common-source amplifier to amplify the differential input signal by the fixed gain with opposite sign.

Abstract: An implantable device includes a substrate and protective cover that cooperate to define an enclosed sensor volume. A sealed enclosure is provided within the sensor volume, with an electronic component assembly (ECA) being located within the sealed enclosure. A flexible circuit board assembly (FCBA) is electrically coupled with the ECA through a wall of the sealed enclosure. At least one transducer is provided on the FCBA in contact with the substrate, and the FCBA is held apart from the enclosure via a polymeric spacer provided therebetween. An inert polymer fill is provided within the sensor volume external to the enclosure.

Abstract: According to an aspect, there is provided a method of forming a magnetic tunneling junction (MTJ) device, including: forming a layer stack including an MTJ layer structure and a spin-orbit torque (SOT) layer below the MTJ layer structure; forming a first etch mask over the layer stack, the first etch mask including a first mask line extending in a first horizontal direction; patterning the layer stack to form an MTJ line extending in the first horizontal direction, the patterning including etching while the first etch mask masks the layer stack, and stopping etching on or above the SOT-layer; forming sidewall spacers on one or both sides of the MTJ line; while the sidewall spacers mask the SOT-layer, etching the SOT-layer to form a patterned layer stack including the MTJ line and a first patterned SOT-layer; forming a second etch mask over the patterned layer stack, the second etch mask including a second mask line extending in a second horizontal direction across the MTJ line; and patterning the patterned la

Abstract: A method (100) for making a non-aqueous rechargeable metal-air battery is provided. The method includes before and/or after inserting (108) a cathode in the battery, a pre-conditioning step (104, 106, 110) of a 3D nanomesh structure, so as to obtain a pre-conditioned 3D nanomesh structure, the pre-conditioned 3D nanomesh structure being free of cathode active material. A cathode to be inserted into a non-aqueous rechargeable metal-air battery is also provided. The cathode includes a pre-conditioned 3D nanomesh structure made of nanowires made of electronic conductive metal material, the pre-conditioned 3D nanomesh structure being free of cathode active material. A non-aqueous rechargeable metal-air battery including such a cathode is also provided.

Abstract: A microfluidic routing device for routing objects of interest in a microfluidic flow includes a substrate; a first layer provided on the substrate, in which the first layer forms a bottom wall of a microfluidic channel. At least two holes through the first layer form respectively an inlet and an outlet for the microfluidic channel The microfluidic routing device further includes a second layer spaced away from the first layer, in which the second layer forms a top wall of the microfluidic channel. The second layer is configured to transmit an optical signal from the microfluidic channel. The microfluidic routing device includes an actuator for actuating the objects of interest in a sorting junction of the microfluidic channel.

Abstract: A solid electrolyte of the present disclosure includes: a porous dielectric having a plurality of pores interconnected mutually; and an electrolyte including a metal salt and at least one selected from the group consisting of an ionic compound and a bipolar compound and at least partially filling an interior of the plurality of pores. Inner surfaces of the plurality of pores of the porous dielectric are at least partially modified by a functional group containing a halogen atom.

Abstract: A memory device including at least one channel and a fluid including particles is provided. In one aspect, the channel includes a least some of the fluid. The memory device may further include an actuator configured to induce a movement of the particles in the channel; and a writing element configured to arrange the particles in a sequence, thereby yielding a sequence of particles in the channel. The particles may include first particles and second particles. The particles may be in a first state or a second state in the channel. In certain aspects, the channel is configured to preserve the sequence of the particles. The memory device may further include a reading element for detecting the sequence of the particles in the channel.

Abstract: A method is provided for forming a semiconductor product including providing a substrate comprising a buried power rail; forming a sacrificial plug at a contact surface on the buried power rail; applying a front-end-of-line module for forming devices in the semiconductor substrate; providing a Via, through layers applied by the front-end-module, which joins the sacrificial plug on the buried power rail; selectively removing the sacrificial plug thereby obtaining a cavity above the buried power rail; filling the cavity with a metal to electrically connect the devices with the buried power rail, wherein the sacrificial plug is formed such that the contact surface area is larger than an area of a cross-section of the Via parallel with the contact surface.

Abstract: A liquid electrochemical memory device is provided. In one aspect, the device includes a memory region for storing at least two bits, the memory region having a first volume; and a liquid electrolyte region fluidically connected to the memory region, the liquid electrolyte region having a second volume larger than the first volume. The device further includes a working electrode exposed to the memory region, and a counter electrode exposed to the liquid electrolyte region. The device also includes an electrolyte filling the memory region and the liquid electrolyte region, in physical contact with the working electrode and the counter electrode, the electrolyte including at least two conductive species. The device further includes a control unit for biasing the working electrode and the counter electrode.

Abstract: A substrate, assembly and method for bonding and electrically interconnecting substrates are provided. According to the method, two substrates are provided, each comprising metal contact structures that are electrically isolated from each other by a bonding layer of dielectric material. Openings are produced in the bonding layer, the openings lying within the surface area of the respective contact structures, exposing the contact material of the structures at the bottom of the openings. Then a layer of conductive material is deposited, filling the openings, after which the material is planarized, removing it from the surface of the bonding layer and leaving a recessed contact patch in the openings. The substrates are then aligned, brought into contact, and bonded by applying an annealing step at a temperature suitable for causing thermal expansion of the contact structures.

Abstract: A superconducting circuit comprises a resonator and a Josephson junction. The resonator comprises an inductor and a capacitor. The inductor comprises a first terminal and a second terminal. The second terminal of the inductor is electrically coupled to a first terminal of the capacitor. A second terminal of the capacitor is electrically coupled to a first terminal of the Josephson junction. The terminal shared by the inductor and the capacitor is configured to be electrically coupled to an alternating current (AC) voltage source having a particular frequency and particular phase. The inductance of the inductor and the capacitance of the capacitor are selected to cause the resonator to resonate at a frequency and a phase that substantially match the particular frequency and the particular phase, respectively, of the AC voltage source to facilitate switching a state of the Josephson junction via a single flux quantum (SFQ) pulse.

Abstract: The disclosed technology relates to a selector device for a memory array, and a method of forming the selector device. In some embodiments, the selector device comprises a first electrode layer embedded in an oxide; a second electrode layer arranged above the first electrode layer and separated from the first electrode layer by the oxide; and a semiconductor material forming a semiconductor layer on the top surface of the second electrode layer, and extending through the second electrode layer and the oxide onto the top surface of the first electrode layer, wherein the semiconductor material contacts the first electrode layer and the second electrode layer. In some embodiments, the selector device helps to solve the sneak path problem in the memory array it is inserted into.

Abstract: Example embodiments relate to time-interleaved analog-to-digital converters and conversion methods thereof. One embodiment includes a slope analog-to-digital converter. The slope analog-to-digital converter includes a sample and hold stage configured to sample an analog input signal at a sampling frequency. The slope analog-to-digital converter also includes a comparator downstream to the sample and hold stage configured to compare the analog input signal to a slope signal. Further, the slope analog-to-digital converter includes a digital logic configured to receive a counter value corresponding to a voltage level of the slope signal and to sample the counter value based upon the comparison, thereby generating a digital representation of the analog input signal based upon the comparison. The slope signal is asynchronous to the sampling frequency.

Abstract: The invention provides in an electron microscopy grid, comprising: - a perforated substrate; - a support film on the perforated substrate; - a mixture of different linker molecules according to Structure (I), wherein AG is an anchoring group, for anchoring the linker molecule to the solid support; BU is a binding unit, for binding to the analyte; L1 is a first linear linker section; L2 is a second linear linker section; ? is the angle between the linear linker section L1 and the linear linker section L2; AS is an angled linker section, connecting the linear linker section L1 and the linear linker section L2. The invention further provides in method of structural determination of analytes, using such EM-grids.

Abstract: The current density distribution is determined in an electronic device including a first and a second electrode, and a layer of a 2-dimensional conductive material extending between the first and second electrode. The total current through the electrodes is measured, and then a first current measurement probe is placed at a plurality of positions near the interface between the 2D material and the first electrode. The probe is coupled to the same voltage as the first electrode. The same is done at the interface between the channel and the second electrode, by placing a second probe coupled to the same voltage as the second electrode. The boundary conditions are determined for the current, and assuming that the current density vector is normal to the interfaces, this yields the boundary conditions for the current density vector. Finally, the continuity equation is solved, taking into account the boundary conditions.

Abstract: Example embodiments relate to imaging systems and methods for acquisition of multi-spectral images. One example imaging system includes a detector that includes an array of light sensitive elements arranged in rows and columns. Each light sensitive element is configured to generate a signal dependent on an intensity of light incident onto the light sensitive element. The imaging system also includes a plurality of wavelength separating units. Each wavelength separating unit is configured to spatially separate incident light within a wavelength range into a number of wavelength bands distributed along a line. The line is a straight line. Each wavelength band along the line is associated with a mutually unique light sensitive element. Further, the imaging system includes a processing unit configured to define a number of mutually unique clusters of light sensitive elements for summing signals from the light sensitive elements within the respective clusters.