Abstract: A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.

Abstract: A quartz crystal microbalance (QCM) sensor, comprises a sensor housing and a crystal component supported within the sensor housing. The crystal component includes a quartz crystal substrate and a gasket seal disposed about the periphery of the quartz crystal substrate configured to prevent ingress of fluids into the sensor housing.

Abstract: An electron bombardment ion source assembly for use in a mass spectrometer and including an anode extending along an axis and surrounding an ionization volume. At least two filaments are each configured to thermionically emit electrons and are positioned outside the ionization volume and proximate to the anode. The at least two filaments each comprise an elliptically-shaped portion and non-elliptical portions on either end of the elliptically-shaped portion. The non-elliptically-shaped portions are configured to be mounted in a fixed position relative to the anode to maintain a constant distance between the elliptically-shaped portion and the anode. The elliptically-shaped portion extends along a plane that intersects a plane perpendicular to the axis of the anode at a non-zero angle.

Abstract: An improved Quartz Crystal Microbalance (QCM) sensor and method for fabrication thereof by one of: (i) increasing the quantity of surface defects to the quartz crystal surface and (ii) an adsorption of non-metal and/or metalloid elements to the quartz crystal surface. The improved sensor, and the method for its fabrication, significantly improves the registration response of the QCM sensor from minutes to several seconds.

Abstract: A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.

Abstract: A semiconductor fabrication system includes a mixing bowl, a distribution system receiving a mixture of gases from the mixing bowl, and a process chamber in fluid communication with the distribution system for performing a variety of semiconductor processes, e.g., deposition and etch processes, on a substrate. A plurality of mixing bowl sensors are disposed within a cavity of the mixing bowl and issue gas signals indicative of the type and flow-rate of the detected gas. Further, at least one process chamber sensor is provided within the process chamber and disposed proximal to the substrate. The process chamber sensor has a resonance property which changes upon exposure to the semiconductor process, i.e., a build-up of deposited material on a surface of the sensor, and issues material process signals indicative of the anticipated material on the surface of the substrate.

Abstract: A method for monitoring precursor material in a carrier stream of a fabrication system comprises depositing a film of precursor material on a surface of a QCM sensor and determining a starting resonance frequency of the QCM sensor with the deposited film of precursor material. The resonance frequency of the QCM sensor is measured during operation of the fabrication system and compared with the starting resonance frequency. A system error is issued when the measured resonance frequency differs from the corresponding starting resonance frequency by more than a threshold value. A system correction is automatically implemented and configured to restore the QCM sensor to the starting resonance frequency.

Abstract: A system and method for determining the changes in resonance frequency in crystal microbalance (CM) sensors and the resulting changes in the determination of incremental mass on the CM sensors caused by temperature. Dual mode resonances and coefficients are used in a deconvolution process to determine and extract the frequency shift caused by temperature to provide the temperature compensated incremental mass (?M). In one embodiment, dual mode analysis is provided using a mass mode (e.g., the c-mode fundamental frequency (fc100)) and a temperature mode (e.g., the anharmonic frequency (fc102)) and associated coefficients. In other embodiments that are more sensitive to temperature changes, dual mode analysis is provided using the b-mode fundamental frequency (fb100) as the temperature-mode and associated coefficients.

Abstract: A method of maintenance optimization for production equipment in a factory includes specifying a time period and determining maintenance tasks to be performed on each piece of production equipment over the specified time period. The technician skills required to perform each maintenance task are determined. The availability of each technician during the specified time period and their certifications are then determined. The parts required for each maintenance task and a parts inventory are determined. A production schedule for the specified time period is then determined. A recommended maintenance schedule is generated which minimizes production impact during the specified time period based on the determined maintenance tasks, technician availability and certifications and parts availability. The recommended maintenance schedule includes a recommended time to perform each maintenance task and a recommended technician to perform each maintenance task.

Abstract: A sealing system includes a first seal, a second seal spaced apart from the first seal and a sealing chamber defined between the first and second seals. The sealing chamber is fluidly connected to a vacuum source. In operation, the sealing chamber is maintained at a pressure that is below atmospheric pressure. Contaminants that breach one of the first and second seals are pulled into the sealing chamber and removed by the vacuum source.

Abstract: A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.

Abstract: A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: A method for displaying gas concentration values on a graphical display of a leak detector comprises detecting a presence of a gas using a gas sensor. A signal is generated by the gas sensor and transmitted from the gas sensor to a processor. The received signal is processed to determine a gas concentration value and a corresponding time stamp. The gas concentration values and corresponding time stamps are displayed graphically as they are determined and newly determined gas concentration values and corresponding time stamps are displayed in relation to previously determined gas concentration values and time stamps in streaming manner.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: An ion source assembly for use in a mass spectrometer comprises a first anode defining a first ionization volume and a first electron source positioned proximate the first anode and configured to generate electrons that pass through the first anode and into the first ionization volume. The ions source assembly further includes a second anode defining a second ionization volume and a second electron source positioned proximate to the second anode and configured to generate to generate electrons that pass through the second anode and into the second ionization volume. At least one optical element is positioned proximate the first ionization volume and defines an aperture. The first and second anodes and the first and second ionization volumes are positioned along an ion optical axis of the mass spectrometer, and the first anode is positioned between the second anode and the aperture.

Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.