Abstract: A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.

Abstract: A wide-range ion source for a mass spectrometer comprises a first portion and a second portion that is positioned downstream of the first portion. The first portion includes an anode and a first filament that is positioned proximate the anode and secured in place relative to the anode. The first filament is exposed to a pressure of a process chamber. A first electron repeller has at least a partially circular shape. The second portion includes a tubular anode, a second filament surrounding the tubular anode, an extraction lens defining an opening and a focus lens to conduct ions into a volume.

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: A method for displaying gas concentration values on a graphical display of a leak detector comprises detecting a presence of a gas using a gas sensor. A signal is generated by the gas sensor and transmitted from the gas sensor to a processor. The received signal is processed to determine a gas concentration value and a corresponding time stamp. The gas concentration values and corresponding time stamps are displayed graphically as they are determined and newly determined gas concentration values and corresponding time stamps are displayed in relation to previously determined gas concentration values and time stamps in streaming manner.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

Abstract: A time-of-flight mass spectrometer assembly includes a flange with a vacuum chamber facing surface and an environment facing surface. The flange defines an opening that extends between the vacuum chamber facing surface and the environment facing surface. A plurality of stacked components are supported by the vacuum chamber facing surface of the flange. A secondary flange is removably secured within the opening of the flange. The secondary flange includes a vacuum chamber facing surface and an environment facing surface. A supported spectrometer component is supported by the vacuum chamber facing surface of the secondary flange such that removal of the secondary flange from the flange acts to remove the supported component from the plurality of stacked components supported by the vacuum chamber facing surface of the flange.

Abstract: An ion source assembly for use in a mass spectrometer comprises a first anode defining a first ionization volume and a first electron source positioned proximate the first anode and configured to generate electrons that pass through the first anode and into the first ionization volume. The ions source assembly further includes a second anode defining a second ionization volume and a second electron source positioned proximate to the second anode and configured to generate to generate electrons that pass through the second anode and into the second ionization volume. At least one optical element is positioned proximate the first ionization volume and defines an aperture. The first and second anodes and the first and second ionization volumes are positioned along an ion optical axis of the mass spectrometer, and the first anode is positioned between the second anode and the aperture.

Abstract: A system and method for monitoring a semiconductor process includes a plurality of sensors and a microcontroller. The plurality of sensors are disposed within a process chamber. The microcontroller receives data from the plurality of sensors and measures the uniformity of a semiconductor process based on the data received from the plurality of sensors.

Abstract: A gas analyzer and a method for performing mass spectrometry analysis includes a membrane configured to receive an input flow of carrier gas. The membrane defines a variable thickness region between first and second positions along an input face of the membrane and separates the analyte sample into an output flow of analyte molecules. A mass spectrometer is disposed downstream of the membrane and includes an input orifice for receiving the output flow. The mass spectrometer is configured to perform a response profile analysis of the analyte molecules in the sample analyte.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: An ion source assembly for use in a mass spectrometer comprises a first anode defining a first ionization volume and a first electron source positioned proximate the first anode and configured to generate electrons that pass through the first anode and into the first ionization volume. The ions source assembly further includes a second anode defining a second ionization volume and a second electron source positioned proximate to the second anode and configured to generate to generate electrons that pass through the second anode and into the second ionization volume. At least one optical element is positioned proximate the first ionization volume and defines an aperture. The first and second anodes and the first and second ionization volumes are positioned along an ion optical axis of the mass spectrometer, and the first anode is positioned between the second anode and the aperture.

Abstract: A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

Abstract: Methods and systems for chemical analysis. For instance, a device for chemical analysis of a sample includes a housing, an inlet, a pump, multiple membranes and at least one detector. The housing contains an interior chamber of the device. The inlet on the housing introduces the sample into the interior chamber. The pump is connected to the housing to form a partial vacuum in the interior chamber. The multiple membranes have different response times to different constituents of the sample. The multiple membranes include at least a first membrane and a second membrane. The multiple membranes have different response times to different constituents of the sample. The detector is for detecting the different constituents of the sample after interaction with the multiple membranes. In addition, a method for chemical analysis of a sample. A first step includes introducing a sample to multiple membranes having different response times to different constituents of the sample.

Abstract: Devices, systems and methods for process monitoring are presented. For instance, the device includes a crystal and a reactance sensor. The crystal is connected to a frequency measurement circuit. The reactance sensor is connected to the crystal. The reactance sensor is configured to detect a change in a process parameter. The frequency measurement circuit detects the change in the process parameter as a change in the frequency of the crystal. In another example, the system includes a reactance sensor and a measurement device. The reactance sensor is disposed in a process chamber, and has a variable reactance responsive to a change in a process parameter. The measurement device is disposed outside the process chamber and has a frequency measurement circuit. The frequency measurement circuit includes a crystal and is connected to the reactance sensor, and detects the change in the process parameter as a change in the frequency of the crystal.

Abstract: A gas analyzer and a method for performing mass spectrometry analysis includes a membrane configured to receive an input flow of carrier gas. The membrane defines a variable thickness region between first and second positions along an input face of the membrane and separates the analyte sample into an output flow of analyte molecules. A mass spectrometer is disposed downstream of the membrane and includes an input orifice for receiving the output flow. The mass spectrometer is configured to perform a response profile analysis of the analyte molecules in the sample analyte.

Abstract: A system for analyzing an analyte is described herein. The system includes a chamber having an inlet and a semi-permeable membrane arranged to seal the inlet. The semi-permeable membrane includes a cross-linked mixture of a first compound and a second compound. The system can also include a radiation source arranged in the vacuum chamber, the radiation source spaced apart from the semi-permeable membrane and adapted to irradiate the semi-permeable membrane with electromagnetic radiation at a frequency at least partially absorbed by the semi-permeable membrane.

Abstract: Methods and systems for chemical analysis. For instance, a device for chemical analysis of a sample includes a housing, an inlet, a pump, multiple membranes and at least one detector. The housing contains an interior chamber of the device. The inlet on the housing introduces the sample into the interior chamber. The pump is connected to the housing to form a partial vacuum in the interior chamber. The multiple membranes have different response times to different constituents of the sample. The multiple membranes include at least a first membrane and a second membrane. The multiple membranes have different response times to different constituents of the sample. The detector is for detecting the different constituents of the sample after interaction with the multiple membranes. In addition, a method for chemical analysis of a sample. A first step includes introducing a sample to multiple membranes having different response times to different constituents of the sample.

Abstract: A system for monitoring thin film deposition is described. The system includes a quartz crystal and a synthesizer to generate a modulated signal. The modulated signal is to be grounded through the quartz crystal. The system also includes a phase detector to determine a phase of the modulated signal from the quartz crystal in order to monitor thin film deposition. A modulation index can be selected so that, at resonance, high frequency of the signal matches the crystal frequency.