Abstract: A device for sensing a physical parameter includes a sensor element configured for measuring the physical parameter and for outputting a corresponding measured signal, wherein the measured signal is influenceable by a sensor drift of the sensor element. The device includes a corrector for correcting the measured signal output by the sensor element to obtain a corrected signal, wherein the corrector is configured for evaluating the measured signal to determine a drift effect of the sensor drift on the measured signal and for correcting the measured signal so as to at least partially compensate for the drift effect. The device includes a signal output configured for outputting the corrected signal.

Abstract: According to various embodiments, a cryptographic processing device is described comprising a processor configured to determine a masking component, generate a masked version of a secret first element by masking multiple components of the secret first element with the masking component, determine a first share of the product of the secret first element and a second element by multiplying the second element with the masked version of the secret first element, determine a second share of the product of the secret first element and the second element by multiplying the second element with the difference of the secret first element and the masked version of the secret first element and continue with a lattice-based cryptography operation using the first share and the second share of the product.

Abstract: A method may comprise: controlling ON/OFF switching of a power switch via a driver circuit; receiving a first signal on a detection pin associated with the power switch, wherein the first signal corresponds to a first point in time when current is not passing through the power switch and wherein the first signal indicates a first voltage drop over one or more other circuit elements; receiving a second signal on the detection pin, wherein the second signal, wherein the second signal corresponds to a second point in time when current is passing through the power switch and wherein the second signal indicates a voltage drop over the power elements; and determining the voltage drop over the power switch based on a difference between the first signal and the second signal.

Abstract: A semiconductor device includes: a carrier having a die pad and a contact; a semiconductor die having opposing first and second main sides and being attached to the die pad by a first solder joint such that the second main side faces the die pad; and a contact clip having a first contact region and a second contact region. The first contact is attached to the first main side by a second solder joint. The second contact region is attached to the contact by a third solder joint. The first contact region has a convex shape facing towards the first main side such that a distance between the first main side and the first contact region increases from a base of the convex shape towards an edge of the first contact region. The base runs along a line that is substantially perpendicular to a longitudinal axis of the contact clip.

Abstract: A power semiconductor device includes a semiconductor substrate having a wide bandgap semiconductor material and a first surface, an insulation layer above the first surface of the semiconductor substrate, the insulation layer including at least one opening extending through the insulation layer in a vertical direction, a front metallization above the insulation layer with the insulation layer being interposed between the front metallization and the first surface of the semiconductor substrate, and a metal connection arranged in the opening of the insulation layer and electrically conductively connecting the front metallization with the semiconductor substrate; wherein the front metallization includes at least one layer that is a metal or a metal alloy having a higher melting temperature than an intrinsic temperature of the wide bandgap semiconductor material of the semiconductor substrate.

Abstract: Methods and devices for detecting electrical arcs are provided. A first wavelet transformation with a first mother wavelet is applied to a chronological sequence of current measurements (80) of a current through a lead, to obtain first wavelet coefficients. In addition, a second wavelet transformation with a second mother wavelet different from the first mother wavelet is applied to the chronological sequence in order to obtain second wavelet coefficients. On the basis of the first wavelet coefficients and the second wavelet coefficients, it is then determined whether an arc (10; 11; 24) is present.

Abstract: Cryptographic information is compiled by: (a) determining a first portion of the cryptographic information based on an input and a randomness; (b) checking a rejection criterion based on the first portion; (b1) re-starting step (a) with a different randomness if the rejection criterion is fulfilled; (b2) if not all portions of the cryptographic information have been generated, determining a subsequent portion of the cryptographic information based on the input and the randomness and continuing with step (b) or, otherwise, continuing with step (c); (c) determining the first portion of the cryptographic information based on the input and the randomness; (d) conveying the respective portion of the cryptographic information; and (e) if not all portions of the cryptographic information have been generated, determining a subsequent portion of the cryptographic information based on the input and the randomness and continuing with step (d).

Abstract: A method of determining a temporal position of a received signal within a sample series is disclosed. The method includes sampling a sensor at a sampling frequency to generate the sample series. A matched filter set of matched filters is applied to the sample series to generate a matched filter correlation set of matched filter correlations, wherein impulse responses of respective matched filters correspond to a template signal at the sampling frequency of the sensor shifted by a sub-interval shift. The matched filter correlations are evaluated to determine a received signal sub-interval shift. The temporal position of the received signal within the sample series is determined based on at least the received signal sub-interval shift.

Abstract: A control circuit for controlling a data input/output is provided. The control circuit comprises a plurality of control level circuits that include a first control level circuit and a last control level circuit. Each control level circuit has a control element, with a number of control elements of the last control level circuit being greater than a number of control elements of the first control level circuit. Each control element is configured to receive a first control signal and a second control signal, and controls a current for the data input/output depending on the first and second control signals. The control circuit is configured to provide the first control signal to the control elements in a sequence starting at the first control level circuit and ending at the last control level circuit, and then to provide the second control signal to the last control level circuit in reverse order.

Abstract: A semiconductor device includes a support substrate having a first surface capable of supporting the epitaxial growth of at least one III-V semiconductor and a second surface opposing the first surface, at least one mesa positioned on the first surface, each mesa including an epitaxial III-V semiconductor-based multi-layer structure on the first surface of the support substrate, the III-V semiconductor-based multi-layer structure forming a boundary with the first surface and a parasitic channel suppression region positioned laterally adjacent the boundary.

Abstract: A clip, a semiconductor package, and a method are disclosed. In one example the clip includes a die attach portion having a first main face and a second main face opposite to the first main face, and at least one through-hole extending between the first and second main faces and including a curved transition from an inner wall of the at least one through-hole to the first main face.

Abstract: A silicon-controlled rectifier (SCR) includes a semiconductor body including a first main surface, an active device region, a first, a second, a third and a fourth surface contact area at the first main surface and arranged directly one after another along a first lateral direction, wherein the semiconductor body is electrically contacted at each of the first to fourth surface contact areas, and a first, a second, a third and a fourth SCR region, wherein the first and third SCR regions are of a first conductivity type and directly adjoin the first and third surface contact areas, respectively, and wherein the second and fourth SCR regions are of a second conductivity type and directly adjoin the second and fourth surface contact areas, respectively, wherein the first SCR region is electrically connected to the fourth SCR region, and the second SCR region is electrically connected to the third SCR region.

Abstract: A package is disclosed. In one example, the package includes an electronic component and an encapsulant encapsulating at least part of the electronic component. A first electrically conductive structure is arranged on one side of the electronic component, a second electrically conductive structure arranged on an opposing other side of the electronic component and being electrically coupled with the electronic component, and at least one sidewall recess at the encapsulant. The first electrically conductive structure and the second electrically conductive structure are configured to be at different electric potentials during operation of the package. The first electrically conductive structure and the second electrically conductive structure are exposed at opposing main surfaces of the encapsulant.

Abstract: An ultrasonic touch sensor includes: a covering having a contact face configured to receive a touch; a first ultrasonic transducer element; a first semiconductor chip comprising the first ultrasonic transducer element; a second ultrasonic transducer element; and an acoustic barrier formed between the first ultrasonic transducer element and the second ultrasonic transducer element.

Abstract: A MEMS device includes a MEMS sound transducer, and control circuitry. The control circuitry includes a supply signal provider for providing a high-level supply signal and read-out circuitry for receiving an output signal from the MEMS sound transducer, and a switching arrangement for selectively connecting the MEMS sound transducer to the supply signal provider, and for selectively connecting the MEMS sound transducer to the read-out circuitry based on a control signal. The control circuitry provides the control signal having an ultrasonic actuation pattern to the switching arrangement during a first condition TX of the control signal, wherein the ultrasonic actuation pattern of the control signal triggers the switching arrangement for alternately coupling the high-level supply signal to the MEMS sound transducer.

Abstract: The subject matter described herein relates to a semiconductor circuit arrangement with a semiconductor substrate with an integrated Hall sensor circuit. During a first clock phase PHspin1 a first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) can be generated in the Hall effect region that has a first dependency on a mechanical stress of the semiconductor substrate. During a second clock phase PHspin2 a second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2) can be generated in the Hall effect region that has a second dependency on a mechanical stress of the semiconductor substrate. The semiconductor circuit arrangement is designed to ascertain a specific mechanical stress component based on a combination of the first electrical voltage signal ±VHallout(PHspin1) or ±VHallbias(PHspin1) and of the second electrical voltage signal ±VHallout(PHspin2) or ±VHallbias(PHspin2).

Abstract: A molded semiconductor package includes a mold compound, a plurality of leads each having a first end embedded in the mold compound and a second end protruding from a side face of the mold compound, and a semiconductor die embedded in the mold compound and electrically connected, within the mold compound, to the plurality of leads. The second end of each lead of the plurality of leads has a bottom surface facing in a same direction as a bottom main surface of the mold compound. Each lead of the plurality of leads has a negative standoff relative to the bottom main surface of the mold compound.

Abstract: A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, an encapsulant encapsulating at least part of the electronic component and at least part of the carrier and having a bottom side at a first vertical level. At least one lead is electrically coupled with the electronic component and comprising a first lead portion being encapsulated in the encapsulant and a second lead portion extending out of the encapsulant at the bottom side of the encapsulant. A functional structure at the bottom side extends up to a second vertical level different from the first vertical level.

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material and a power source. A switch arrangement including a plurality of switches is provided, which is configured to selectively provide electrical power from the power source to the set of the heaters.

Abstract: A circuit includes a cross-talk compensation component including a power profile reconstruction component for reconstructing the power profile of a digital microphone coupled to a microelectromechanical (MEMS) device, wherein the power profile represents power consumption of the digital microphone over time between at least two operational modes of the digital microphone, and a reconstruction filter for modeling thermal and/or acoustic properties of the digital microphone; and a subtractor having a first input for receiving a signal from the digital microphone, a second input coupled to the cross-talk compensation component, and an output for providing a digital output signal.