Abstract: In some examples, this disclosure describes a light-emitting diode (LED) driver circuit comprising a set of LED drivers, wherein each LED driver of the set of LED drivers is configured to control one or more LEDs of a set of LEDs. Additionally, the LED driver circuit comprises a core computing device configured to receive LED control information, compare primary path LED driver control output data with secondary path LED driver control output data to detect whether one or more error conditions are present in the core computing device, receive channel status feedback information, compare the secondary path LED driver control output data with the channel status feedback information to detect whether one or more error conditions are present in the set of LED drivers or in the set of LEDs, and trigger, based on determining that one or more error conditions are present, one or more remedial actions.

Abstract: Magnetic field sensor apparatuses are discussed. A magnetic field sensor apparatus in accordance with one example implementation in this case comprises a coil and a magnetic field sensor. A chip carrying the coil and the magnetic field sensor is arranged on a leadframe. The leadframe comprises a cutout.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

Abstract: Examples relate to a method, an apparatus and a computer program for determining distance information based on Time of Flight (ToF) sensor data. The method includes obtaining the ToF sensor data, determining one or more saturated regions within the ToF sensor data, determining distance information for one or more boundary regions located adjacent to the one or more saturated regions based on the ToF sensor data, and determining distance information for at least a part of the one or more saturated regions based on the distance information of the one or more boundary regions.

Abstract: A controller for an environmental sensor provides digital environmental measurement values from analog environmental measurements performed by analog circuitry, the digital environmental measurement values lying in a global scale range. The controller subjects the global scale range to a subdivision into scale subranges that are proper subranges of the global scale range. The controller selects, among the scale subranges, one scale subrange in which an analog environmental measurement is to be performed, selects an offset information and a gain information that are associated with the selected scale subrange and that are indicative of an offset and a gain to be applied by the analog circuitry to perform an analog environmental measurement in the selected scale subrange, and to provide the offset information and the gain information to the analog circuitry.

Abstract: A semiconductor package includes a package substrate that includes an interior laminate layer, a first metallization layer disposed below the interior laminate layer, and a second metallization layer disposed above the interior laminate layer, a first semiconductor die that includes a first load terminal disposed on a first surface of the first semiconductor die and a second load terminal disposed on a second surface of the first semiconductor die that is opposite from the first surface of the first semiconductor die, and a liner of dielectric material on the first semiconductor die, wherein the first semiconductor die is embedded within the interior laminate layer such that the first surface of the first semiconductor die faces the second metallization layer, and wherein the liner of dielectric material is disposed on a corner of the first semiconductor die that is between the first and second load terminals of the first semiconductor die.

Abstract: According to one embodiment, a method performed by a first communication device for generating a symmetric session key for encrypted communication with a second communication device is described comprising generating a blinding value for each of a first and a second private key component, generating a blinded public key from the first private key component, the second private key component, and the blinding values using a public key generation function, transmitting the blinded public key to the second communication device for encryption of a shared secret, receiving the shared secret, generating a session key for encrypted communication with the second communication device from the shared secret, encrypting, using the session key, an information from which the blinding values are derivable and transmitting the encrypted information to the second communication device.

Abstract: A die package and method is disclosed. In one example, the die package includes a die having a first die contact on a first side and a second die contact on a second side opposite the first side, and insulating material laterally adjacent to the die. A metal structure substantially directly contacts the surface of the second die contact, wherein the metal structure is made of the same material as the second die contact. A first pad contact on the first side of the die electrically contacts the first die contact, and a second pad contact on the first side of the die electrically contacts the second die contact via the metal structure. The insulating material electrically insulates the metal structure from the first die contact.

Abstract: A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

Abstract: A tire pressure monitoring system (TPMS) includes a communication interface device configured to communicate with a target TPMS sensor module. The communication interface device include a radio frequency (RF) transceiver configured to generate at least one wake-up signal; an antenna array configured to transmit each wake-up signal as a directional RF beam; a processing circuit configured to monitor for a response signal in response to the antenna array transmitting the at least one wake-up signal; and a power amplifier configured to set a power of each wake-up signal according to an adjustable power setting such that the power of each subsequent wake-up signal is increased in discrete steps until the response signal is received by the RF transceiver.

Abstract: A package is disclosed. In one example, the package includes a first main face for mounting a heat sink and an opposing second main face for being mounted on a mounting base. The package comprises a carrier, an electronic component mounted at the carrier, and an encapsulant encapsulating at least part of the electronic component and at least part of the carrier. Electrically insulating material covers electrically conductive material of the carrier at said first main face. The encapsulant comprises at least one step at the first main face.

Abstract: Techniques for obtaining reflectance measurements using a time-of-flight (ToF) measurement device. An example method comprises obtaining a distance measurement, using one or more pixels in a ToF sensor, obtaining an intensity measurement corresponding to the distance measurement, using the one or more pixels, and calculating a reflectance value, based on the distance measurement, the intensity measurement, and a reflectance calibration factor. In some embodiments, the calibration distance is obtained by measuring a reference distance to a calibration surface, using a reference pixel in the ToF sensor, and obtaining the calibration distance from the measured reference distance.

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Abstract: A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptacle in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptacle and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptacle. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

Abstract: A circuit includes: a first load circuit and a second load circuit coupled in parallel between a first node and a reference voltage node, where the first load circuit and the second load circuit are configured to receive a first input signal and a second input signal, respectively; a first pass device and a first switch coupled in series between a voltage supply node and the first node; a second pass device and a second switch coupled in series between the voltage supply node and the first node; and an amplifier, where a first input terminal and a second input terminal of the amplifier are configured to be coupled to a reference input voltage and the first node, respectively, where an output terminal of the amplifier is coupled to a first control terminal of the first pass device and a second control terminal of the second pass device.

Abstract: A silicon carbide device includes a transistor cell with a source region and a gate electrode. The source region is formed in a silicon carbide body and has a first conductivity type. A first low-resistive ohmic path electrically connects the source region and a doped region of a second conductivity type. The doped region and a floating well of the first conductivity type form a pn junction. A first clamp region having the second conductivity type extends into the floating well. A second low-resistive ohmic path electrically connects the first clamp region and the gate electrode.

Abstract: One exemplary embodiment describes an integrated circuit, comprising a multiplicity of scan flip-flops, a multiplicity of ring oscillator circuits, wherein each ring oscillator circuit comprises a chain of logic gates comprising a plurality of logic gates connected in succession, an input multiplexer for the chain, and a feedback line from an output connection of the last logic gate of the chain to a data input connection of the input multiplexer. Each ring oscillator circuit is assigned a scan flip-flop group that contains at least one of the multiplicity of scan flip-flops.

Abstract: A magnet for a magnetic angle sensing system, the magnet having a tapered geometry in parallel with a rotation axis of the magnet, and configured to be mounted to a rotatable member such that a thin end of the magnet is closer to a magnetic field sensing element located on the rotation axis than a broad end of the magnet.

Abstract: A sensor device includes a magnetic field sensor component, including a chip carrier having a connection conductor and a magnetic field sensor chip arranged on the chip carrier, and a magnet, wherein the magnetic field sensor component is arranged on a mounting surface of the magnet, wherein the mounting surface has an elevation and the connection conductor is bent around the elevation.

Abstract: A semiconductor device includes a semiconductor die comprising a radio frequency (RF) circuit, a first dielectric layer disposed over a first surface of the semiconductor die, an antenna layer disposed over a surface of the first dielectric layer, and an antenna feeding structure coupling the antenna layer to the RF circuit of the semiconductor die, wherein the semiconductor die comprises a via, and the antenna feeding structure comprises a first portion arranged within the opening of the semiconductor die and extending to the first surface of the semiconductor die, and a second portion arranged through the first dielectric layer.