Abstract: A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a housing frame provided for pre-assembly in the cryostat. A pin insert is arranged in the housing frame. The pin insert includes a base plate and contact pins. The contact pins are arranged in an array. A housing cover has a receptacle for the substrate. The housing cover, when assembled with the housing frame, exerts a compressive force on a front side of the substrate by which a rear side of the substrate is pressed onto the contact pins.

Abstract: A method for fabricating a semiconductor device includes providing a die with a metallization layer including a first metal with a high melting point; providing a die carrier including a second metal with a high melting point; providing a solder material including a third metal with a low melting point; providing a layer of a fourth metal with a high melting point on the semiconductor die or the die carrier; and soldering the semiconductor die to the die carrier and creating: a first intermetallic compound between the semiconductor die and the die carrier and including the first metal and the third metal; a second intermetallic compound between the first intermetallic compound and the die carrier and including the second metal and the third metal; and precipitates of a third intermetallic compound between the first intermetallic compound and the second intermetallic compound and including the third metal and the fourth metal.

Abstract: An isolated power converter includes: a transformer having primary winding and first and second auxiliary windings on the primary side; a converter stage configured to convert a DC input for driving the primary winding and having a resonant capacitor electrically connected to the primary winding; a controller configured to control switching of the converter stage; and a voltage supply circuit configured to select a first voltage as a supply voltage for the controller if a voltage proportional to a secondary side voltage of the transformer is at a first level or select a second voltage as the supply voltage if the voltage proportional to the secondary side voltage is at a second level greater than the first level. The first voltage corresponds to a summation of voltages across the first auxiliary winding and the resonant capacitor. The second voltage corresponds to a voltage across the second auxiliary winding.

Abstract: A method for operating a power converter and a control circuit are disclosed. The method includes, in a power converter including an input, a converter stage, a first switch connected between the input and the converter stage, a second switch connected between input nodes of the converter stage, and an output capacitor connected between output nodes of the converter stage: detecting an operating state of the power converter; and operating the power converter in a first operating mode when the power converter is in a first operating state. Operating the power converter in the first operating mode includes regulating an input current received at the input by a switched-mode operation of the first and second electronic switches.

Abstract: A dual active bridge circuit includes a primary side circuit including first high-side transistor and a first low-side transistor electrically coupled at a first node, and an energy transfer inductor coupled to the first node and configured to provide an inductor current based on a voltage differential across the energy transfer inductor. A secondary side circuit includes a second high-side transistor and a second low-side transistor electrically coupled at a second node. A transformer is configured to transfer energy from the primary side circuit to the secondary side circuit based on the inductor current. A controller is configured to drive each of the transistors between respective switching states with a same duty cycle to control the voltage differential across the energy transfer inductor. The same duty cycle is less than 50% such that all of the transistors are simultaneously off for a predetermined interval.

Abstract: In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.

Abstract: This disclosure includes novel ways of implementing a power supply that powers a load. More specifically, a power supply includes a bidirectional power converter and a controller. The controller monitors a magnitude of an input voltage supplied from an input voltage source to a load. Based on a magnitude of the input voltage, the controller switches between a first mode of operating the bidirectional power converter to charge an energy storage resource using (a portion of power provided by) the input voltage and a second mode of producing a backup voltage from the energy storage resource to power the load as a substitute to the input voltage such as when the input voltage is below a threshold value.

Abstract: An inductor device includes a first face, a first inductive path, and magnetic permeable material. The first face couples the inductor device to a circuit board. The first inductive path extends between a first terminal on the first face to a second terminal on the first face. A portion of the first inductive path is exposed on a second face of the inductor device. The second face is disposed opposite the first face. The second face supports dissipation of heat conveyed by the first inductive path from the first face to the second face. The magnetic permeable material is disposed between the first face and the second face and carries magnetic flux associated with the first inductive path.

Abstract: A controller for a power converter, a corresponding power converter and a corresponding method are provided. The controller for a power converter includes a rectifier configured to receive an alternating current input signal and output rectified half waves, an output capacitor and a current control device is coupled between the rectifier and the output capacitor. After reaching a first maximum voltage, power flowing is gradually reduced, and later the current provided to the output capacitor is gradually ramped up.

Abstract: A semiconductor device package comprises an electrically conductive carrier, a semiconductor die disposed on the carrier, an encapsulant encapsulating part of the carrier and the semiconductor die, an electrically insulating and thermally conductive interface structure, in particular covering an exposed surface portion of the carrier and a connected surface portion of the encapsulant, wherein the interface structure comprises a glass transition temperature in a range between ?40° C. to 150° C.

Abstract: In an embodiment, a transistor device a semiconductor substrate having a main surface, and a cell field including a plurality of transistor cells of a power transistor. The cell field further includes: a body region of a second conductivity type; a source region of a first conductivity type on or in the body region, the first conductivity type opposing the second conductivity type; a gate trench in the main surface of the semiconductor substrate; a gate dielectric lining the gate trench; a metal gate electrode arranged in the gate trench on the gate dielectric; and an electrically insulating cap arranged on the metal gate electrode. A method of fabricating a gate of the transistor device is also described.

Abstract: A method for designing a loudspeaker excursion estimator comprises measuring an excursion-related parameter for a loudspeaker, for each of a plurality of loudspeaker input signal levels and each of a plurality of loudspeaker input signal frequencies. The method further comprises, for each of the loudspeaker input signal frequencies and based on the measured excursion-related parameters, identifying a respective loudspeaker input signal level corresponding to a target maximum excursion-related parameter value. The method further comprises determining a filter response, based on the identified loudspeaker input signal levels and their respective loudspeaker input signal frequencies, and implementing a filter, based on the calculated filter response, for generating an excursion estimation based on loudspeaker input signal levels.

Abstract: A high-electron-mobility transistor comprises a semiconductor body comprising a barrier region and a channel region that forms a heterojunction with the barrier region such that a two-dimensional charge carrier gas channel is disposed in the channel region, source and drain electrodes disposed on the semiconductor body and laterally spaced apart from one another, a gate structure disposed on the semiconductor body and laterally between the source and drain electrodes, the gate structure being configured to control a conduction state of two-dimensional charge carrier gas, and a first dielectric region that is disposed along the upper surface of the semiconductor body in a lateral region that is between the gate structure and the drain electrode, wherein the first dielectric region comprises aluminum and oxide, and wherein first dielectric region comprises a first end that faces and is laterally spaced apart from the gate structure.

Abstract: A method of manufacturing an electronic module assembly includes forming the electronic module assembly, wherein the electronic module assembly comprises a plurality of internal exposed surfaces, a plurality of external exposed surfaces, at least one internal cavity, and an internal heat source configured to generate heat internally within the electronic module assembly; dipping the electronic module assembly into a thermally conductive material to coat the plurality of internal exposed surfaces and the plurality of external exposed surfaces and to at least partially fill the at least one internal cavity; and curing the thermally conductive material formed on the plurality of internal exposed surfaces and the plurality of external exposed surfaces and filled within the at least one internal cavity to form a thermally conductive layer, wherein the thermally conductive layer is formed as a one-piece integral member.

Abstract: A semiconductor device includes an IGBT in an IGBT portion of a semiconductor body and a diode in a diode portion of the semiconductor body. The diode includes an anode region of a first conductivity type and confined by diode trenches along a first lateral direction. Each of the diode trenches includes a diode trench electrode and a diode trench dielectric. A first contact groove extends into the anode region along a vertical direction from the first surface of the semiconductor body. An anode contact region of the first conductivity type adjoins a bottom side of the first contact groove. A cathode contact region of a second conductivity type adjoins a second surface of the semiconductor body opposite to the first surface. The IGBT includes a gate trench including a gate electrode and a gate dielectric, a source region, an emitter electrode, a drift region, and a second contact groove.

Abstract: A device includes an interposer including an insulative layer between a lower metal layer and a first upper metal layer and a second upper metal layer, a semiconductor transistor die attached to the first upper metal layer and comprising a first lower main face and a second upper main face, with a drain or collector pad on the first main face and electrically connected to the first upper metal layer, a source or emitter electrode pad and a gate electrode pad on the second main face, a leadframe connected to the interposer and comprising a first lead connected with the first upper metal layer, a second lead connected with the source electrode pad, and a third lead connected with the second upper metal layer, and wherein an electrical connector that is connected between the gate electrode pad and the second upper metal layer is orthogonal to a first electrical connector.

Abstract: A power supply includes a controller. The controller controls switching of a first switch and a second switch in a power supply to regulate conveyance of energy from a primary winding of a transformer to a secondary winding of the transformer to generate an output voltage. To control generation of the output voltage, the controller receives a first signal generated at a first node coupling the first switch and the second switch. As discussed herein, the controller controls activation of the first switch to an ON state depending on a magnitude of the first signal. This disclosure provides improved reliability of power supply components (such as one or more switches) because such components are no longer stressed (or overstressed) due to body diode cross conduction.

Abstract: An apparatus comprises a power source connected to a buffer capacitor. The apparatus comprises a first switch connected between the buffer capacitor and a driven switch. The buffer capacitor is charged by the power source when the first switch is turned off. The apparatus comprises a comparator. The comparator monitors the charging of the buffer capacitor. In response to the buffer capacitor reaching a threshold amount of charge, the comparator turns on the first switch to initiate a charge redistribution of charge from the buffer capacitor to the driven switch.

Abstract: In an embodiment, a leadframe includes a first electrically conductive part and a second electrically conductive part, each having an outer surface arranged to provide substantially coplanar outer contact areas having a footprint and an inner surface opposing the outer surface, the first part being spaced apart from the second part by a gap, a first recess arranged in the inner surface of the first part, a second recess arranged in the inner surface of the second part, and a first electrically conductive insert that is arranged in, and extends between, the first recess and the second recess and bridges the gap between the first part and the second part.

Abstract: An electronic module includes a semiconductor package, and a clip connected to the semiconductor package. The clip is connected to or includes at least one fastening element which is configured to make a connection to an external heat sink.