Patents Assigned to Infineon Technologies LLC
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Publication number: 20240296115Abstract: Systems, methods, and devices prevent data loss in memory devices. Systems may include a non-volatile memory device that includes a first data unit configured to store data for the non-volatile memory device and associated metadata, and a second data unit configured to store data for the non-volatile memory device and associated metadata, wherein the first data unit and second data unit are configured to alternate storing a most recent version of the data and associated metadata. The systems may also include control circuitry configured to read metadata from the first data unit and the second data unit, identify the first data unit as an inactive data unit based on contents of the first data unit and the second data unit, and perform one or more update operations such that the first data unit is updated and set as an active unit when the update operations are complete.Type: ApplicationFiled: October 12, 2023Publication date: September 5, 2024Applicant: Infineon Technologies LLCInventors: Amichai GIVANT, Yoav YOGEV, Shivananda SHETTY, Stefano AMATO, Itzic COHEN, Idan KOREN, Yair SOFER
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Patent number: 12045714Abstract: A method of operation of a semiconductor device that includes the steps of coupling each of a plurality of digital inputs to a corresponding row of non-volatile memory (NVM) cells that stores an individual weight, initiating a read operation based on a digital value of a first bit of the plurality of digital inputs, accumulating along a first bit-line coupling a first array column weighted bit-line current, in which the weighted bit-line current corresponds to a product of the individual weight stored therein and the digital value of the first bit, and converting and scaling, an accumulated weighted bit-line current of the first column, into a scaled charge of the first bit in relation to a significance of the first bit.Type: GrantFiled: February 17, 2023Date of Patent: July 23, 2024Assignee: Infineon Technologies LLCInventors: Ramesh Chettuvetty, Vijay Raghavan, Hans Van Antwerpen
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Patent number: 12033703Abstract: Memory devices and methods for operating the same are provided. Generally, the device includes an array of multibit-memory-cells, each operable to store multiple bits in separate locations of a charge-trapping layer, and control-circuitry coupled to the array. The control-circuitry is operable read 1st and 2nd bit values of each cell individually based on generated first and second sensed currents, where the first and second sensed currents correspond to charges trapped in first and second bit locations. The control-circuitry executes an algorithm based on the first and second sensed currents and determines a logic state of the cell. In one embodiment, the control-circuitry averages the sensed currents, and compares this to a reference current to determine the logic state. In another, the 2nd bit value is a complement of the 1st, and the control-circuitry compares the currents to determine the logic state without use of a reference current.Type: GrantFiled: October 9, 2021Date of Patent: July 9, 2024Assignee: Infineon Technologies LLCInventors: Oren Shlomo, Amichai Givant, Yair Sofer
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Publication number: 20240184875Abstract: A method can include determining the CS signal has transitioned from inactive to active and receiving at least target address information at a bus interface of the IC device. In response to target address information, retrieving data stored at a corresponding storage location of the IC device. By operation of authentication circuits, generating an authentication value using at least one cryptographic function that includes at least the authentication parameters and the retrieved data. The authentication value can be transmitted with retrieved data from the IC device. Corresponding devices and systems are also disclosed.Type: ApplicationFiled: May 5, 2023Publication date: June 6, 2024Applicant: Infineon Technologies LLCInventors: Clifford ZITLAW, Yoav YOGEV, Qamrul HASAN
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Publication number: 20240162896Abstract: A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n-1, and the third number is 1, the total number of resistors is 2n.Type: ApplicationFiled: November 17, 2023Publication date: May 16, 2024Applicant: Infineon Technologies LLCInventor: Oren Shlomo
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Patent number: 11983411Abstract: A method can include, in a default mode of a memory device, decoding command data received on a unidirectional command address (CA) bus of a memory interface according to a first standard. In response to decoding a mode enter command, placing the memory device into an alternate management mode. In the alternate management mode, receiving alternate command data on the CA bus, and in response to receiving a command execute indication on the CA bus, decoding alternate command data according to a second standard to execute an alternate command. In response to decoding a mode exit command received on the CA bus according to the first standard, returning the memory device to the default mode. The memory interface comprises the CA bus and a data bus, and the CA bus and data bus comprise a plurality of parallel input connections. Corresponding devices and systems are also disclosed.Type: GrantFiled: April 25, 2022Date of Patent: May 14, 2024Assignee: Infineon Technologies LLCInventors: Nobuaki Hata, Clifford Zitlaw, Yuichi Ise, Stephan Rosner
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Patent number: 11978528Abstract: Systems, methods, and devices dynamically determine sensing levels for memory devices. Devices include nonvolatile memory cells included in a plurality of memory sectors, a plurality of static reference cells configured to represent a first reference value for distinguishing between memory states, and a plurality of dynamic reference cells configured to represent the first reference value after a designated amount of memory sector activity. Devices also include a comparator configured to be coupled to at least one memory cell of the plurality of memory cells and to at least two of the plurality of static reference cells and the plurality of dynamic reference cells, and further configured to determine a memory state of the at least one memory cell based, at least in part, on a second reference value determined by a combination of at least two of the plurality of static reference cells and the plurality of dynamic reference cells.Type: GrantFiled: January 28, 2022Date of Patent: May 7, 2024Assignee: Infineon Technologies LLCInventors: Shivananda Shetty, Yoram Betser, Pawan Singh, Stefano Amato, Alexander Kushnarenko
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Patent number: 11978494Abstract: A method of operating a memory device that includes the steps of receiving a read command and a target address in a non-volatile memory (NVM) array, in which the NVM array is divided into a plurality of blocks based on row and column addresses, performing a read operation on NVM cells in the target address and coupling an output of each NVM cell read to a sensing circuit, generating a local reference voltage based on a base reference voltage and an adjustment reference voltage corresponding to the target address of the NVM cells being read and a block that the NVM cells belong thereto, and offsetting the base reference voltage with the adjustment reference voltage, and coupling the local reference voltage to the sensing circuit. Other embodiments are also described.Type: GrantFiled: February 17, 2023Date of Patent: May 7, 2024Assignee: Infineon Technologies LLCInventors: Edwin Kim, Alan D. Devilbiss, Kapil Jain, Patrick F. O'Connell, Franklin Brodsky, Shan Sun, Fan Chu
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Patent number: 11954206Abstract: Systems, methods, and devices securely boot processors and nonvolatile memories. Methods include implementing, using a controller of a secured nonvolatile memory, a validation operation on a first portion of code stored in a first secured storage region of the secured nonvolatile memory, the validation operation comprising computing a validation value. Methods also include retrieving a second portion of code from a second secured storage region, the second portion of code comprising a pre-computed validation value, the first and second portion of code being associated with booting a processor, and implementing a comparison operation of the validation value and the pre-computed validation value. Methods further include generating, using the controller, a signal based on a result of the comparison operation, the signal being provided to the processor via an interface of the secured nonvolatile memory, and the signal enabling booting of the processor in response to a matching comparison operation.Type: GrantFiled: June 25, 2021Date of Patent: April 9, 2024Assignee: Infineon Technologies LLCInventors: Sandeep Krishnegowda, Zhi Feng
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Publication number: 20240107771Abstract: A fabrication method of a semiconductor device is described. Generally, the method includes forming a customizable oxide-nitride-oxide (ONO) stack over a substrate in an in-situ atomic layer deposition (ALD) tool or chamber. Radical oxidation or oxide deposition process steps are performed to form tunnel dielectric layer overlying the substrate. Silicon nitride deposition process steps are also performed to form a multi-layer charge trapping (CT) layer in which at least some of the process parameters of silicon nitride deposition process steps are adjusted when forming the first and second CT sub-layers of the multi-layer CT layer. Subsequently, radical oxidation or oxide deposition process steps are performed in the ALD tool to form a blocking dielectric layer overlying the multi-layer CT layer.Type: ApplicationFiled: September 27, 2022Publication date: March 28, 2024Applicant: Infineon Technologies LLCInventors: Michael ALLEN, Krishnaswamy RAMKUMAR
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Patent number: 11940831Abstract: In accordance with an embodiment, a circuit includes: a trimmable reference current generator having a temperature dependent current output node, the trimmable reference current generator including: a proportional to absolute temperature (PTAT) current generation circuit; a first programmable current scaling circuit coupled to the PTAT current generation circuit and including a first output coupled to the temperature dependent current output node; a constant current generation circuit; a second programmable current scaling circuit coupled to the constant current generation circuit and including a first output coupled to the temperature dependent current output node; and a reference interface circuit having an input coupled to the temperature dependent current output node and an output configured to be coupled to a reference current input of a memory sense amplifier.Type: GrantFiled: March 3, 2022Date of Patent: March 26, 2024Assignee: Infineon Technologies LLCInventor: Cristinel Zonte
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Patent number: 11935603Abstract: A non-volatile memory has an array of non-volatile memory cells, first reference word lines and second reference word lines, and sense amplifiers. The sense amplifiers read system data, that has been written to supplemental non-volatile memory cells of the first reference word lines, using comparison of the supplemental non-volatile memory cells of the first reference word lines to supplemental non-volatile memory cells of the second reference word lines. Status of erasure of the non-volatile memory cells of the array is determined based on reading the system data.Type: GrantFiled: January 11, 2022Date of Patent: March 19, 2024Assignee: Infineon Technologies LLCInventors: Amichai Givant, Idan Koren, Shivananda Shetty, Pawan Singh, Yoram Betser, Kobi Danon, Amir Rochman
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Publication number: 20240087626Abstract: A system and method are provided for generating Unique Digital Signatures (UDS) for semiconductor memories to improve data security. Generally, the method involves allocating a number of native memory cells in a memory device; obtaining a multibit binary entropy string (BES) using variations of threshold voltages (VT) of the allocated cells as an entropy source; and mathematically manipulating the BES to generate the UDS. Optionally, the BES can be concatenated with another multibit binary number from a second entropy source internal or external to the memory device, and the result of the concatenation mathematically manipulated to generate the UDS. In one embodiment, a reference voltage is located at a median VT for the cells, and the BES is obtained by reading the cells versus the reference, assigning those having a VT above the reference a first bit value, and the remaining cells a second bit value.Type: ApplicationFiled: December 21, 2022Publication date: March 14, 2024Applicant: Infineon Technologies LLCInventors: Amichai GIVANT, Yoav YOGEV, Eduardo MAYAAN, Yair SOFER
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Patent number: 11852544Abstract: Embodiments of the present disclosure provide a temperature sensor that may be integrated into a memory device along with a 1T1C reference voltage generator to enable the 1T1C reference voltage generator to provide a temperature dependent 1T1C reference voltage to a memory core (e.g., F-RAM memory core) of the memory device. The temperature sensor may detect a temperature of the memory core, and output this information (e.g., as a trim) for use by the 1T1C reference voltage generator in providing a temperature dependent 1T1C reference voltage. In this way, both the P-term and U-term margins of the memory core may be maintained even as a temperature of the memory core increases.Type: GrantFiled: March 31, 2021Date of Patent: December 26, 2023Assignee: Infineon Technologies LLCInventors: Srikanth Machavolu, Sheshadri Sohani, Kapil Jain, Alan D. DeVilbiss
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Patent number: 11855641Abstract: A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n?1, and the third number is 1, the total number of resistors is 2n.Type: GrantFiled: December 7, 2020Date of Patent: December 26, 2023Assignee: Infineon Technologies LLCInventor: Oren Shlomo
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Patent number: 11841764Abstract: In an embodiment, a method includes: receiving, via control lines of a parallel interface of a memory device, a first command and a first read command including one or more bits indicative of a first selection that causes a selector circuit to select data from a data memory portion of the memory device; providing, via data lines of the parallel interface, first data from the data memory portion using the selector circuit, where the provided first data is associated with the first read command; receiving, via the control lines, a second command and a second read command including one or more bits indicative of a second selection that causes the selector circuit to select data from an ECC memory portion; and providing, via the data lines, first ECC values from the ECC memory portion using the selector circuit, where the first ECC values are associated with the first data.Type: GrantFiled: March 18, 2022Date of Patent: December 12, 2023Assignee: Infineon Technologies LLCInventors: Yuichi Ise, Clifford Zitlaw, Nobuaki Hata
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Patent number: 11830942Abstract: In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.Type: GrantFiled: March 4, 2021Date of Patent: November 28, 2023Assignee: Infineon Technologies LLCInventors: Angela T. Hui, Wenmei Li, Minh Van Ngo, Amol Ramesh Joshi, Kuo-Tung Chang
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Patent number: 11810616Abstract: A method of fabricating a multi-level memory cell that includes the steps of forming a shallow trench isolation (STI) in a substrate, performing clean and preclean process such that top surfaces of the STI and substrate are substantially leveled, forming a tunnel dielectric using a radical oxidation process, forming upper and lower silicon oxynitride layers in which an amount of electric charge trapped represents N×analog values stored in the multi-level memory cell, N is a natural number greater than 2, forming a blocking dielectric and patterning to form a memory stack, and forming a lightly-doped drain extension (LDD) adjacent to the memory stack by angled implant such that the LDD extends at least partly under the memory stack.Type: GrantFiled: May 19, 2022Date of Patent: November 7, 2023Assignee: Infineon Technologies LLCInventors: Krishnaswamy Ramkumar, Venkatraman Prabhakar, Vineet Agrawal, Long Hinh, Santanu Kumar Samanta, Ravindra Kapre
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Publication number: 20230342034Abstract: A method can include, in a default mode of a memory device, decoding command data received on a unidirectional command address (CA) bus of a memory interface according to a first standard. In response to decoding a mode enter command, placing the memory device into an alternate management mode. In the alternate management mode, receiving alternate command data on the CA bus, and in response to receiving a command execute indication on the CA bus, decoding alternate command data according to a second standard to execute an alternate command. In response to decoding a mode exit command received on the CA bus according to the first standard, returning the memory device to the default mode. The memory interface comprises the CA bus and a data bus, and the CA bus and data bus comprise a plurality of parallel input connections. Corresponding devices and systems are also disclosed.Type: ApplicationFiled: April 25, 2022Publication date: October 26, 2023Applicant: Infineon Technologies LLCInventors: Nobuaki Hata, Clifford Zitlaw, Yuichi Ise, Stephan Rosner
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Publication number: 20230267983Abstract: A method of operating a memory device that includes the steps of receiving a read command and a target address in a non-volatile memory (NVM) array, in which the NVM array is divided into a plurality of blocks based on row and column addresses, performing a read operation on NVM cells in the target address and coupling an output of each NVM cell read to a sensing circuit, generating a local reference voltage based on a base reference voltage and an adjustment reference voltage corresponding to the target address of the NVM cells being read and a block that the NVM cells belong thereto, and offsetting the base reference voltage with the adjustment reference voltage, and coupling the local reference voltage to the sensing circuit. Other embodiments are also described.Type: ApplicationFiled: February 17, 2023Publication date: August 24, 2023Applicant: Infineon Technologies LLCInventors: Edwin KIM, Alan D. DEVILBISS, Kapil JAIN, Patrick F. O'CONNELL, Franklin BRODSKY, Shan SUN, Fan CHU