Abstract: A method of operation of a semiconductor device that includes the steps of coupling each of a plurality of digital inputs to a corresponding row of non-volatile memory (NVM) cells that stores an individual weight, initiating a read operation based on a digital value of a first bit of the plurality of digital inputs, accumulating along a first bit-line coupling a first array column weighted bit-line current, in which the weighted bit-line current corresponds to a product of the individual weight stored therein and the digital value of the first bit, and converting and scaling, an accumulated weighted bit-line current of the first column, into a scaled charge of the first bit in relation to a significance of the first bit.

Abstract: Systems, methods, and devices implement counters with fault tolerance and power loss protection. Systems include a non-volatile memory device that includes a first counter configured to store a first plurality of data values representing a plurality of count operations, and a second counter configured to store a second plurality of data values representing an initiation and a completion of each erase operation performed on the first counter. Systems also include control circuitry configured to generate a count value based on a current counter value of the first counter, a current counter value of the second counter, and at least one physical parameter of the first counter.

Abstract: A non-volatile memory has an array of non-volatile memory cells, first reference word lines and second reference word lines, and sense amplifiers. The sense amplifiers read system data, that has been written to supplemental non-volatile memory cells of the first reference word lines, using comparison of the supplemental non-volatile memory cells of the first reference word lines to supplemental non-volatile memory cells of the second reference word lines. Status of erasure of the non-volatile memory cells of the array is determined based on reading the system data.

Abstract: Systems, methods, and devices dynamically determine sensing levels for memory devices. Devices include nonvolatile memory cells included in a plurality of memory sectors, a plurality of static reference cells configured to represent a first reference value for distinguishing between memory states, and a plurality of dynamic reference cells configured to represent the first reference value after a designated amount of memory sector activity. Devices also include a comparator configured to be coupled to at least one memory cell of the plurality of memory cells and to at least two of the plurality of static reference cells and the plurality of dynamic reference cells, and further configured to determine a memory state of the at least one memory cell based, at least in part, on a second reference value determined by a combination of at least two of the plurality of static reference cells and the plurality of dynamic reference cells.

Abstract: Memory devices and methods for operating the same are provided. Generally, the device includes an array of multibit-memory-cells, each operable to store multiple bits in separate locations of a charge-trapping layer, and control-circuitry coupled to the array. The control-circuitry is operable read 1st and 2nd bit values of each cell individually based on generated first and second sensed currents, where the first and second sensed currents correspond to charges trapped in first and second bit locations. The control-circuitry executes an algorithm based on the first and second sensed currents and determines a logic state of the cell. In one embodiment, the control-circuitry averages the sensed currents, and compares this to a reference current to determine the logic state. In another, the 2nd bit value is a complement of the 1st, and the control-circuitry compares the currents to determine the logic state without use of a reference current.

Abstract: Semiconductor devices and methods of manufacturing the same are provided. The semiconductor devices may have a memory array having two transistor (2T) memory cells, each including a non-volatile memory (NVM) transistor and a high voltage (HV) field-effect transistor (FET) as a select transistor. The devices further include a logic area in which HV FETs, input/output (I/) FETs, and low voltage (LV)/core FETs are formed thereon. Other embodiments are also described.

Abstract: A semiconductor device and methods of fabricating the same are disclosed. Generally, the method includes forming a tunnel-dielectric for a memory transistor over a surface of a substrate, forming a nitride charge-trapping layer over the tunnel-dielectric, and forming a gate-dielectric for a field-effect transistor over the surface of the substrate. Forming the gate-dielectric can include performing a number of oxidation processes to form a thick gate-oxide while concurrently forming a blocking-dielectric including an oxide layer over the charge-trapping layer of the memory transistor.

Abstract: A method can include storing first instruction data in a first region of a nonvolatile memory device; mapping addresses of the first region to predetermined memory address spaces of a processor device; executing the first instruction data from the first region with the processor device; receiving second instruction data for the processor device. While the first instruction data remains available to the processor device, the second instruction data can be written into a second region of the nonvolatile memory device. By operation of the processor device, addresses of the second region can be remapped to the predetermined memory address spaces of the processor device; and executing the second instruction data from the second region with the processor device.

Abstract: A method of fabricating a multi-level memory cell that includes the steps of forming a shallow trench isolation (STI) in a substrate, performing clean and preclean process such that top surfaces of the STI and substrate are substantially leveled, forming a tunnel dielectric using a radical oxidation process, forming upper and lower silicon oxynitride layers in which an amount of electric charge trapped represents N×analog values stored in the multi-level memory cell, N is a natural number greater than 2, forming a blocking dielectric and patterning to form a memory stack, and forming a lightly-doped drain extension (LDD) adjacent to the memory stack by angled implant such that the LDD extends at least partly under the memory stack.

Abstract: A DC-DC converter including voltage and slope regulation and a method of operating the same are provided. Generally, the converter includes a voltage source to supply an output, a switching-circuit coupled to the voltage sources to control a voltage on the output, and a slope-detector coupled to the switching-circuit and the output to detect a slope of a voltage transition between a first and a second voltage. When the detected slope exceeds a predetermined maximum the slope-detector sends a digital signal to the switching-circuit to intermittently pause the voltage transition to limit the slope to less than the maximum. In one embodiment, the voltage source is a charge-pump, and the switching-circuit includes a logic-gate coupled to the slope-detector to turn the charge-pump ON when the detected slope is less than the maximum, and to turn OFF the charge-pump for a time when the slope exceeds the maximum.

Abstract: A method can include, for each row of a nonvolatile memory (NVM) cell array, generating a multiply-accumulate (MAC) result for the row by applying input values on bit lines. Each MAC result comprising a summation of an analog current or voltage that is a function of each input value modified by a corresponding weight value stored by the NVM cells of the row. By operation of at least one multiplexer, one of the rows can be connected to an analog-to-digital converter (ADC) circuit to convert the analog current or voltage of the row into a digital MAC value. A storage element of each NVM cell can be configured to store a weight value that can vary between no less than three different values. Corresponding devices and systems are also disclosed.

Abstract: A semiconductor device and method of making such device is presented herein. The method includes disposing a gate layer over a dielectric layer on a substrate and further disposing a cap layer over the gate layer. A first transistor gate is defined having an initial thickness substantially equal to a combined thickness of the cap layer and the gate layer. A first doped region is formed in the substrate adjacent to the first transistor gate. The cap layer is subsequently removed and a second transistor gate is defined having a thickness substantially equal to the thickness of the gate layer. Afterwards, a second doped region is formed in the substrate adjacent to the second transistor gate. The first doped region extends deeper in the substrate than the second doped region, and a final thickness of the first transistor gate is substantially equal to the thickness of the second transistor gate.

Abstract: A semiconductor device that has a semiconductor-oxide-nitride-oxide-semiconductor (SONOS) based non-volatile memory (NVM) array including NVM cells arranged in rows and columns, in which NVM transistors of the NVM cells are configured to store N×analog values corresponding to the N×levels of their drain current (ID) or threshold voltage (VT) levels, digital-to-analog (DAC) function that receives and converts digital signals from external devices, column multiplexor (mux) function that is configured to select and combine the analog value read from the NVM cells, and analog-to-digital (ADC) function that is configured to convert analog results of the column mux function to digital values and output the digital values.

Abstract: Systems, methods, and devices securely boot processors and nonvolatile memories. Methods include implementing, using a controller of a secured nonvolatile memory, a validation operation on a first portion of code stored in a first secured storage region of the secured nonvolatile memory, the validation operation comprising computing a validation value. Methods also include retrieving a second portion of code from a second secured storage region, the second portion of code comprising a pre-computed validation value, the first and second portion of code being associated with booting a processor, and implementing a comparison operation of the validation value and the pre-computed validation value. Methods further include generating, using the controller, a signal based on a result of the comparison operation, the signal being provided to the processor via an interface of the secured nonvolatile memory, and the signal enabling booting of the processor in response to a matching comparison operation.

Abstract: A semiconducting device utilizing air-gaps for inter-layer insulation and methods of producing the device are described. The device may be produced by forming a sacrificial layer between two structures. A porous membrane layer is then formed over the sacrificial layer. The membrane layer is porous to an etch product, which allows for the subsequent etching of the sacrificial layer leaving an air gap between the device structures and the membrane intact. The device may also include a cap layer formed above the device structures and the membrane.

Abstract: Embodiments of the present disclosure provide a temperature sensor that may be integrated into a memory device along with a 1T1C reference voltage generator to enable the 1T1C reference voltage generator to provide a temperature dependent 1T1C reference voltage to a memory core (e.g., F-RAM memory core) of the memory device. The temperature sensor may detect a temperature of the memory core, and output this information (e.g., as a trim) for use by the 1T1C reference voltage generator in providing a temperature dependent 1T1C reference voltage. In this way, both the P-term and U-term margins of the memory core may be maintained even as a temperature of the memory core increases.

Abstract: A method can include, by operation of a host device, initiating a first transaction with at least a first device on a serial bus in synchronism with a clock, the first transaction having a predetermined response latency. The host device can initiate a second transaction on the serial bus in synchronism with the clock signal during the response latency. The first transaction and second transaction can be completed on the serial bus in synchronism with the clock. The serial bus is configured to transmit instruction data identifying transactions, target data identifying a destination for transactions, and data for transactions. Corresponding devices and systems are also disclosed.

Abstract: A device can include a plurality of regions, each region including a plurality of nonvolatile memory cells; a permission store configured to store a set of permission values, including at least one permission value for each region in a nonvolatile fashion; and access control circuits configured to control access to each region according to the permission value for the region, including one or more of requiring authentication to access the region, encrypting data read from the region, and decrypting data for storage in the region. Related methods and systems are also disclosed.

Abstract: Embodiments of the present disclosure provide systems and methods of reducing the EMI effect generated by such analog blocks. By varying the clock frequency in time of oscillators used by such analog blocks, the EMI energy may be spread over a wide spectrum range thereby reducing the peak energy for the main frequency. To achieve this, the oscillator frequency is directly varied using analog mechanisms. The mechanisms may be based on a synchronized method for increasing/decreasing the current that is charging/discharging the oscillator capacitor. The frequency variation may be achieved by analog control of the extra charge/discharge current.

Abstract: A storage device can include at least one nonvolatile (NV) memory array that includes a first section having a first physical address range, and a second section having a second physical address range. A nonvolatile fault indication can be set to at least a fault state or a no-fault state. A memory watchdog circuit configured to set the fault indication to the fault state in response to an expiration of a predetermined watchdog period, the watchdog period being reset in response to a defer indication. An address mapping circuit can be configured to, in response to the fault indication having the no fault state, mapping input addresses to the first physical addresses range, and in response to the fault indication having the fault state, mapping the same input addresses to the second physical address range. Corresponding methods and systems are also disclosed.