Abstract: A circuit for controlling a motor that includes control circuitry configured to generate, for a phase of the motor, a switching signal indicating to couple the phase to a first terminal of a supply for an entire portion of each switching cycle of a first plurality of switching cycles corresponding to a first range of electrical angles for the rotor and to couple the phase to a second terminal of the supply for a portion of each switching cycle of a second plurality of switching cycles corresponding to a second range of electrical angles for the rotor. The control circuitry is further configured to control the motor based on the switching signal.

Abstract: A method for determining a rotation angle of a magnet includes measuring a 3D magnetic field vector of a magnetic field generated by the magnet, wherein the 3D magnetic field vector describes at least a part of an ellipse in 3D space during a rotational movement of the magnet. The method further includes mapping the measured 3D magnetic field vector to a 2D vector based on a compensation mapping, wherein the compensation mapping is configured to map the ellipse in 3D space to a circle in 2D space. The method further includes determining the rotation angle of the magnet based on the 2D vector.

Abstract: A method for controlling an electric load is described herein. In accordance with one embodiment the method includes collecting ambient energy using an energy harvesting circuit and using the collected ambient energy to charge a buffer capacitor. The method further includes alternatingly connecting and disconnecting an electrical load and the buffer capacitor, wherein a capacitor voltage provided by the buffer capacitor is applied to the electrical load in a discharging phase, in which the electrical load is connected to the buffer capacitor and the capacitor voltage decreases, and wherein the buffer capacitor is recharged in a charging phase, in which the electrical load is disconnected from the buffer capacitor in a charging phase in which the capacitor voltage again increases. The durations of the charging phase and the discharging phase are designed such that the capacitor voltage stays above a minimum supply voltage of the electrical load.

Abstract: A power semiconductor device includes: a semiconductor body; a control electrode at least partially on or inside the semiconductor body; elevated source regions in the semiconductor body adjacent to the control electrode; recessed body regions adjacent to the elevated source regions; and a dielectric layer arranged on a portion of a surface of the semiconductor body and defining a contact hole. The contact hole is at least partially filled with a conductive material establishing an electrical contact with at least a portion of the elevated source regions and at least a portion of the recessed body regions. At least one first contact surface between at least one elevated source region and the dielectric layer extends in a first horizontal plane. At least one second contact surface between at least one recessed body region and the dielectric layer extends in a second horizontal plane located vertically below the first horizontal plane.

Abstract: A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.

Abstract: A semiconductor device and method is disclosed. In one example, the semiconductor device includes a single first row of leads and a first chip carrier comprising a first electrically insulating layer arranged on the single first row of leads. At least one first semiconductor chip is mounted on the first electrically insulating layer, wherein the at least one first semiconductor chip is arranged over only the single first row of leads.

Abstract: A semiconductor package having an antenna; and a semiconductor die which is coupled to the antenna and comprises a transmitter configured to transmit wirelessly via the antenna a wireless signal having information on a local oscillator signal to a further semiconductor package comprising a further semiconductor die.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

Abstract: A light detection and ranging (LIDAR) sensor includes a first reflective surface configured to oscillate about a first rotation axis to deflect a light beam into an environment; and a second reflective surface configured to oscillate about a second rotation axis to guide light received from the environment onto a photodetector of the LIDAR sensor. The first rotation axis and the second rotation axis extend parallel to one another. The LIDAR sensor also includes a control circuit configured to drive the first reflective surface to oscillate with a first maximum deflection angle about the first rotation axis, and to drive the second reflective surface to oscillate with a second maximum deflection angle about the second rotation axis, the first maximum deflection angle being greater than the second maximum deflection angle, and an area of the first reflective surface is less than an area of the second reflective surface.

Abstract: In some examples, this disclosure describes a light-emitting diode (LED) driver circuit comprising a set of LED drivers, wherein each LED driver of the set of LED drivers is configured to control one or more LEDs of a set of LEDs. Additionally, the LED driver circuit comprises a core computing device configured to receive LED control information, compare primary path LED driver control output data with secondary path LED driver control output data to detect whether one or more error conditions are present in the core computing device, receive channel status feedback information, compare the secondary path LED driver control output data with the channel status feedback information to detect whether one or more error conditions are present in the set of LED drivers or in the set of LEDs, and trigger, based on determining that one or more error conditions are present, one or more remedial actions.

Abstract: A semiconductor package includes a package substrate that includes an interior laminate layer, a first metallization layer disposed below the interior laminate layer, and a second metallization layer disposed above the interior laminate layer, a first semiconductor die that includes a first load terminal disposed on a first surface of the first semiconductor die and a second load terminal disposed on a second surface of the first semiconductor die that is opposite from the first surface of the first semiconductor die, and a liner of dielectric material on the first semiconductor die, wherein the first semiconductor die is embedded within the interior laminate layer such that the first surface of the first semiconductor die faces the second metallization layer, and wherein the liner of dielectric material is disposed on a corner of the first semiconductor die that is between the first and second load terminals of the first semiconductor die.

Abstract: A controller for an environmental sensor provides digital environmental measurement values from analog environmental measurements performed by analog circuitry, the digital environmental measurement values lying in a global scale range. The controller subjects the global scale range to a subdivision into scale subranges that are proper subranges of the global scale range. The controller selects, among the scale subranges, one scale subrange in which an analog environmental measurement is to be performed, selects an offset information and a gain information that are associated with the selected scale subrange and that are indicative of an offset and a gain to be applied by the analog circuitry to perform an analog environmental measurement in the selected scale subrange, and to provide the offset information and the gain information to the analog circuitry.

Abstract: According to one embodiment, a method performed by a first communication device for generating a symmetric session key for encrypted communication with a second communication device is described comprising generating a blinding value for each of a first and a second private key component, generating a blinded public key from the first private key component, the second private key component, and the blinding values using a public key generation function, transmitting the blinded public key to the second communication device for encryption of a shared secret, receiving the shared secret, generating a session key for encrypted communication with the second communication device from the shared secret, encrypting, using the session key, an information from which the blinding values are derivable and transmitting the encrypted information to the second communication device.

Abstract: An apparatus may include a regulated power converter, a control engine configured to control the regulated power converter based upon a regulation control parameter, and a parameter control system. The parameter control system may be configured to detect a transient event at an output of the regulated power converter. The parameter control system may be configured to modify, in response to the transient event, the regulation control parameter from a first value to a second value based upon a parameter modification profile. The parameter control system may be configured to modify, in response to modifying the regulation control parameter from the first value to the second value, the regulation control parameter according to a function of the parameter modification profile. The function may define a return of the regulation control parameter from the second value to the first value over a period of time.

Abstract: A measurement arrangement includes a first soft magnetic element, a second soft magnetic element, a magnetic element which is mechanically coupled to the first soft magnetic element and is configured to produce a magnetic field, and a sensor arrangement for capturing the magnetic field, which sensor arrangement is arranged in such a manner that a relative movement between the first soft magnetic element and the sensor arrangement results in a change in the magnetic field at the location of the sensor arrangement. The sensor arrangement is configured to determine the change. The sensor arrangement and the magnetic element are arranged between the first soft magnetic element and the second soft magnetic element.

Abstract: A method includes providing a silicon carbide substrate, wherein a gate trench extends from a main surface of the silicon carbide substrate into the silicon carbide substrate and wherein a gate dielectric is formed on at least one sidewall of the gate trench, and forming a gate electrode in the gate trench, the gate electrode including a metal structure and a semiconductor layer between the metal structure and the gate dielectric.

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Abstract: Examples relate to a method, an apparatus and a computer program for determining distance information based on Time of Flight (ToF) sensor data. The method includes obtaining the ToF sensor data, determining one or more saturated regions within the ToF sensor data, determining distance information for one or more boundary regions located adjacent to the one or more saturated regions based on the ToF sensor data, and determining distance information for at least a part of the one or more saturated regions based on the distance information of the one or more boundary regions.

Abstract: Some examples relate to a system including a pulse modulation (PM) circuit having a PM input and a PM output. The system also includes a load circuit having a load circuit input, and an I/O pad coupling the PM output to the load circuit input. An asymmetry detection circuit has a first asymmetry detection (AD) input coupled to the PM output via a first feedback path, a second AD input coupled to an output node of the I/O pad via a second feedback path, and an AD output coupled to the PM input of the pulse modulation circuit via a control path.

Abstract: Magnetic field sensor apparatuses are discussed. A magnetic field sensor apparatus in accordance with one example implementation in this case comprises a coil and a magnetic field sensor. A chip carrying the coil and the magnetic field sensor is arranged on a leadframe. The leadframe comprises a cutout.