Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes a leadframe for flip chip attaching a semiconductor die thereon that comprises a rectangular area segmented into individual pads. The individual pads comprise a first pad, a second pad, and a third pad, wherein the first pad is larger than the second pad and larger than the third pad. The second pad is located in a first corner area of the rectangular area and the third pad is located in a second corner area of the rectangular area. The second corner area is located diagonally opposite to the first corner area.

Abstract: An electronic device is disclosed. In one example, the electronic device comprises a laminate carrier comprising a plurality of laminated layers, an electronic component embedded in the laminate carrier, and an at least partially electrically conductive pin extending partially inside the laminate carrier and partially protruding beyond the laminate carrier. The pin is electrically coupled with the electronic component.

Abstract: A semiconductor package is provided. The semiconductor package may include at least one semiconductor chip including a contact pad configured to conduct a current, a conductor element, wherein the conductor element is arranged laterally overlapping the contact pad and with a distance to the contact pad, at least one electrically conductive spacer, a first adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the contact pad, and a second adhesive system configured to electrically and mechanically connect the at least one electrically conductive spacer with the conductor element, wherein the conductor element is electrically conductively connected to a clip or is at least part of a clip, and wherein the spacer is configured to electrically conductively connect the contact pad with the laterally overlapping portion of the conductor element.

Abstract: A method for operating a power converter and a control circuit are disclosed. The method includes, in a power converter including an input, a converter stage, a first switch connected between the input and the converter stage, a second switch connected between input nodes of the converter stage, and an output capacitor connected between output nodes of the converter stage: detecting an operating state of the power converter; and operating the power converter in a first operating mode when the power converter is in a first operating state. Operating the power converter in the first operating mode includes regulating an input current received at the input by a switched-mode operation of the first and second electronic switches.

Abstract: A method for fabricating a semiconductor device includes providing a die with a metallization layer including a first metal with a high melting point; providing a die carrier including a second metal with a high melting point; providing a solder material including a third metal with a low melting point; providing a layer of a fourth metal with a high melting point on the semiconductor die or the die carrier; and soldering the semiconductor die to the die carrier and creating: a first intermetallic compound between the semiconductor die and the die carrier and including the first metal and the third metal; a second intermetallic compound between the first intermetallic compound and the die carrier and including the second metal and the third metal; and precipitates of a third intermetallic compound between the first intermetallic compound and the second intermetallic compound and including the third metal and the fourth metal.

Abstract: A dual active bridge circuit includes a primary side circuit including first high-side transistor and a first low-side transistor electrically coupled at a first node, and an energy transfer inductor coupled to the first node and configured to provide an inductor current based on a voltage differential across the energy transfer inductor. A secondary side circuit includes a second high-side transistor and a second low-side transistor electrically coupled at a second node. A transformer is configured to transfer energy from the primary side circuit to the secondary side circuit based on the inductor current. A controller is configured to drive each of the transistors between respective switching states with a same duty cycle to control the voltage differential across the energy transfer inductor. The same duty cycle is less than 50% such that all of the transistors are simultaneously off for a predetermined interval.

Abstract: An isolated power converter includes: a transformer having primary winding and first and second auxiliary windings on the primary side; a converter stage configured to convert a DC input for driving the primary winding and having a resonant capacitor electrically connected to the primary winding; a controller configured to control switching of the converter stage; and a voltage supply circuit configured to select a first voltage as a supply voltage for the controller if a voltage proportional to a secondary side voltage of the transformer is at a first level or select a second voltage as the supply voltage if the voltage proportional to the secondary side voltage is at a second level greater than the first level. The first voltage corresponds to a summation of voltages across the first auxiliary winding and the resonant capacitor. The second voltage corresponds to a voltage across the second auxiliary winding.

Abstract: A device for forming a housing for a power semiconductor module arrangement includes a mold. The mold includes a first cavity including a plurality of first openings and a second opening, the second opening being coupled to a runner system, wherein the runner system is configured to inject a mold material into the first cavity through the second opening. The device further includes a plurality of sleeves or hollow bushings, wherein a first end of each of the plurality of sleeves or hollow bushings is arranged in one of the first openings, and wherein a second end of each of the plurality of sleeves or hollow bushings extends to the outside of the mold, a heating element configured to heat the mold, and a cooling element configured to cool the plurality of sleeves or hollow bushings.

Abstract: An encapsulant for an electronic package is disclosed. In one example, the encapsulant comprises an electrically insulating matrix material, and a porous colorant in the matrix material.

Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

Abstract: A circuit includes one or more datastores configured to store a result register and a readout counter value and logic circuitry coupled to the one or more datastores. The logic circuitry is configured to cause, for a cycle of a plurality of cycles of a periodic signal, one or more analog-to-digital converters (ADCs) to store data to the result register and modify the readout counter value in response to the one or more ADCs storing the data to the result register for the cycle. In response to a read request for the data at the result register for the cycle, the logic circuitry is configured to output the data stored by the result register, output the readout counter value for the cycle, and, after the output of the readout counter value, set the readout counter value to a predetermined value.

Abstract: In some examples, a method of operating a circuit is described. The method may include performing a circuit function and estimating a probability of failure of the circuit based on one or more stress origination metrics, one or more stress victim events, and one or more initial state conditions.

Abstract: A method of forming a semiconductor package includes producing a package substrate that includes an interior laminate layer, a first metallization layer disposed below the interior laminate layer, and a second metallization layer disposed above the interior laminate layer, providing a first load terminal on a first surface of the first semiconductor die and a second load terminal on a second surface of the first semiconductor die; and a liner of dielectric material on the first semiconductor die; providing a liner of dielectric material on the first semiconductor die; embedding the first semiconductor die within the interior laminate layer such that the first surface of the first semiconductor die faces the second metallization layer, and wherein the liner of dielectric material is disposed on a corner of the first semiconductor die that is between the first and second load terminals of the first semiconductor die.

Abstract: A semiconductor device includes: a drift region of a first conductivity type in a semiconductor body having a first main surface; a body region of a second conductivity type between the drift region and the first main surface; and trenches extending into the semiconductor body from the first main surface and patterning the semiconductor body into mesas. The trenches include: a first trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes; a second trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes; and a third trench having first and second electrodes that face one another along a lateral direction, and a dielectric arranged between the first and second electrodes. Additional semiconductor device embodiments are described herein.

Abstract: In an embodiment, a method includes: receiving raw data from a millimeter-wave radar sensor; generating a first radar-Doppler image based on the raw data; generating a first radar point cloud based on the first radar-Doppler image; using a graph encoder to generate a first graph representation vector indicative of one or more relationships between two or more parts of the target based on the first radar point cloud; generating a first cadence velocity diagram indicative of a periodicity of movement of one or more parts of the target based on the first radar-Doppler image; and classifying an activity of a target based on the first graph representation vector and the first cadence velocity diagram.

Abstract: An ESD protection device includes a semiconductor body having an upper surface, a plurality of p-type wells that each extend from the upper surface into the semiconductor body, and a plurality of n-type wells that each extend from the upper surface into the semiconductor body, wherein a total area of electrical insulator disposed between the p-type wells and the adjacent semiconductor body is greater than a total area of electrical insulator disposed between the n-type wells and the adjacent semiconductor body.

Abstract: In an embodiment, a semiconductor device includes a semiconductor body having a first major surface, a second major surface opposing the first major surface and at least one transistor device structure, a source pad and a gate pad arranged on the first major surface, a drain pad and at least one further contact pad coupled to a further device structure. The drain pad and the at least one further contact pad are arranged on the second major surface.

Abstract: Error correction is proposed in which a syndrome calculation is carried out in a code domain of a second code and an efficient error correction algorithm is carried out in a code domain of a first code.

Abstract: A radar semiconductor chip includes a radar circuit component configured to generate at least part of a frequency-modulated ramp signal or process at least part of a reflected frequency-modulated ramp signal according to a control parameter; a memory configured to store a sequencing program associated with regulating the control parameter, wherein the sequencing program specifies a first data source, external to the sequencing program, that is configured to provide a first data value corresponding to the control parameter; and a decoder configured to read the sequencing program, access the first data value from the first data source specified by the sequencing program, derive a first control value for the control parameter from the first data value, and provide the first control value to the radar circuit component. The radar circuit component regulates a controlled circuit function in accordance with the control parameter based on the first control value.

Abstract: pa The method of processing a semiconductor wafer includes forming one or more epitaxial layers over its first main surface. It also involves forming one or more porous layers within the semiconductor wafer or within the epitaxial layers. Together, the semiconductor wafer, the epitaxial layer(s), and the porous layer(s) form a substrate. Next, doped regions of a semiconductor device are formed within the epitaxial layer(s). After forming these doped regions, a non-porous part of the semiconductor wafer is separated from the rest of the substrate along the porous layer(s).