Patents Assigned to Infineon Technologies
  • Multilayer metallization with stress-reducing interlayer
    Patent number: 8736054
    Abstract: A wiring structure for a semiconductor device includes a multilayer metallization having a total thickness of at least 5 ?m and an interlayer disposed in the multilayer metallization with a first side of the interlayer adjoining one layer of the multilayer metallization and a second opposing side of the interlayer adjoining a different layer of the multilayer metallization. The interlayer includes at least one of W, WTi, Ta, TaN, TiW, and TiN or other suitable compound metal or a metal silicide such as WSi, MoSi, TiSi, and TaSi.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventors: Manfred Schneegans, Jürgen Förster
  • Semiconductor device including diffusion soldered layer on sintered silver layer
    Patent number: 8736052
    Abstract: A semiconductor device includes a substrate and a first sintered silver layer on the substrate. The semiconductor device includes a first semiconductor chip and a first diffusion soldered layer coupling the first semiconductor chip to the first sintered silver layer.
    Type: Grant
    Filed: August 22, 2011
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventors: Niels Oeschler, Kirill Trunov, Roland Speckels
  • Semiconductor device having a through contact and a manufacturing method therefor
    Patent number: 8735262
    Abstract: According to an embodiment, a method of forming a semiconductor device includes: providing a wafer having a semiconductor substrate with a first side a second side opposite the first side, and a dielectric region arranged on the first side; mounting the wafer with the first side on a carrier system; etching a deep vertical trench from the second side through the semiconductor substrate to the dielectric region, thereby insulating a mesa region from the remaining semiconductor substrate; and filling the deep vertical trench with a dielectric material.
    Type: Grant
    Filed: October 24, 2011
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventors: Hermann Gruber, Thomas Gross, Andreas Peter Meiser, Markus Zundel
  • Off-center angle measurement system
    Patent number: 8736257
    Abstract: A method for measuring an angular position of a rotating shaft, the method including providing a magnetic field which rotates with the shaft about an axis of rotation, positioning an integrated circuit having first and second magnetic sensing bridges within the magnetic field at a radially off-center position from the axis of rotation, the first and second magnetic sensing bridges respectively providing first and second signals representative of first and second magnetic field directions, the integrated circuit having a set of adjustment parameters for modifying attributes of the first and second signals, modifying values of the set of adjustment parameters until errors in the first and second signals are substantially minimized, and determining an angular position of the shaft based on the first and second signals.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Granig, Dirk Hammerschmidt, Udo Ausserlechner
  • Pad sidewall spacers and method of making pad sidewall spacers
    Patent number: 8736062
    Abstract: A method of making contact pad sidewall spacer and pad sidewall spacers are disclosed. An embodiment includes forming a plurality of contact pads on a substrate, each contact pad having sidewalls, forming a first photoresist over the substrate, and removing the first photoresist from the substrate thereby forming sidewall spacers along the sidewalls of the plurality of the contact pads.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventor: Johann Gatterbauer
  • Vehicle lighting arrangement
    Patent number: 8736172
    Abstract: A vehicle lighting arrangement comprising a luminous device, a luminous device driver circuit, a sensor and a nonvolatile memory, wherein the luminous device driver circuit is designed to drive the luminous device during luminous device driving such that the luminous device emits light, wherein the sensor is designed to detect a sensor state of the luminous device, and wherein the vehicle lighting arrangement is designed to read in a sensor state of the luminous device detected by the sensor and to write the read-in sensor state to the nonvolatile memory.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventors: Markus Hammer, Guenther Ruhl
  • Determining a change in the activation state of an electromagnetic actuator
    Patent number: 8737034
    Abstract: A method determines a change in the activation state of an electromagnetic actuator.
    Type: Grant
    Filed: January 13, 2010
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies AG
    Inventors: Herbert Gietler, Heinz Zitta
  • Transistor component having an amorphous semi-isolating channel control layer
    Patent number: 8735981
    Abstract: Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: May 27, 2014
    Assignee: Infineon Technologies Austria AG
    Inventor: Gerhard Schmidt
  • PULSE MODULATION CONTROL IN A DC-DC CONVERTER CIRCUIT
    Publication number: 20140139296
    Abstract: In a device, a pulse modulation switching logic is provided to generate switching signals of a pulse modulator so as to generate a pulse modulated signal with a first pulse modulation control parameter and a second pulse modulation control parameter. The first pulse modulation control parameter is controlled on the basis of a first control signal, and the second pulse modulation control parameter is controlled on the basis of a second control signal. A first control loop is provided to generate the first control signal from an output signal derived from the pulse modulated signal. A second control loop is provided to generate the second control signal on the basis of the output signal. The first and second control signals are applied to concurrently control the first and second pulse modulation control parameters.
    Type: Application
    Filed: January 27, 2014
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Stefano MARSILI, Dietmar STRAEUSSNIGG, Luca BIZJAK, Robert PRIEWASSER, Matteo AGOSTINELLI
  • Method for Fabricating an Electronic Component
    Publication number: 20140138843
    Abstract: A carrier and a semiconductor chip are provided. A connection layer is applied to a first main face of the semiconductor chip. The connection layer includes a plurality of depressions. A filler is applied to the connection layer or to the carrier. The semiconductor chip is attached to the carrier so that the connection layer is disposed between the semiconductor chip and the carrier. The semiconductor chip is affixed to the carrier.
    Type: Application
    Filed: November 19, 2012
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Georg Meyer-Berg, Khalil Hosseini, Joachim Mahler, Edward Fuergut
  • SENSOR SIGNAL PROCESSING USING TRANSLINEAR MESH
    Publication number: 20140139289
    Abstract: Apparatuses and methods are described where input signals are supplied to a translinear mesh. In some embodiments an output of the translinear mesh is regulated to a desired value.
    Type: Application
    Filed: November 18, 2013
    Publication date: May 22, 2014
    Applicant: Infineon Technologies AG
    Inventors: Dieter DRAXELMAYR, Simone FABBRO
  • CHIP ARRANGEMENTS AND METHODS FOR MANUFACTURING A CHIP ARRANGEMENT
    Publication number: 20140138803
    Abstract: A chip arrangement is provided, the chip arrangement including: a carrier; a chip disposed over the carrier, the chip including one or more contact pads, wherein a first contact pad of the one or more contact pads is electrically contacted to the carrier; a first encapsulation material at least partially surrounding the chip; and a second encapsulation material at least partially surrounding the first encapsulation material.
    Type: Application
    Filed: November 16, 2012
    Publication date: May 22, 2014
    Applicant: Infineon Technologies AG
    Inventors: Ralf Otremba, Josef Hoeglauer, Juergen Schredl, Xaver Schloegel, Klaus Schiess, Bernd Roemer, Edward Fuergut
  • METHOD AND APPARATUS FOR DETERMINING A CHARGE STATE
    Publication number: 20140139230
    Abstract: Described are methods and devices by which a charge state of a battery can be determined. The determination is made in various embodiments by substantially separating a load, and detecting voltages associated with the battery, and by including adjustments based on operating conditions of the battery.
    Type: Application
    Filed: November 19, 2013
    Publication date: May 22, 2014
    Applicant: Infineon Technologies AG
    Inventors: Christoph UNTERRIEDER, Stefano MARSILI, Florian HUS
  • Method for Manufacturing an Electronic Component
    Publication number: 20140138813
    Abstract: A semiconductor wafer includes a first main face and a second main face opposite to the first main face and a number of semiconductor chip regions. The wafer is diced along dicing streets to separate the semiconductor chip regions from each other. At least one metal layer is formed on the first main face of each one of the semiconductor chip regions.
    Type: Application
    Filed: November 21, 2012
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Gopalakrishnan Trichy Rengarajan, Armin Tilke
  • Method for Manufacturing a Semiconductor Device
    Publication number: 20140141594
    Abstract: A method for producing a semiconductor device is provided. The method includes: providing a wafer including an upper surface and a plurality of semiconductor mesas extending to the upper surface; forming a first support structure made of a first material and adjoining the plurality of semiconductor mesas at the upper surface so that adjacent pairs of the plurality of semiconductor mesas are bridged by the first support structure; forming a second support structure made of a second material different from the first material and adjoining the plurality of semiconductor mesas at the upper surface so that the adjacent pairs of the plurality of semiconductor mesas are bridged by the second support structure; removing the first support structure; and at least partly removing the second support structure.
    Type: Application
    Filed: November 21, 2012
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventor: Kurt Sorschag
  • DRIVER CIRCUIT WITH TIGHT CONTROL OF GATE VOLTAGE
    Publication number: 20140139268
    Abstract: A driver circuit includes a driver output stage and an operational amplifier. The driver output stage has a high-level voltage input and a low-level voltage input, and is operable to generate an output voltage responsive to a gate voltage applied to the driver output stage. The operational amplifier is operable to regulate the gate voltage applied to the driver output stage so that the output voltage corresponds to a control signal input to the operational amplifier. A first supply voltage connected to the high-level voltage input of the driver output stage is higher than a maximum value of the control signal, and a second supply voltage connected to the low-level voltage input of the driver output stage is lower than a minimum value of the control signal.
    Type: Application
    Filed: November 19, 2012
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventor: Reinhold Bayerer
  • System and Method for High Input Capacitive Signal Amplifier
    Publication number: 20140140538
    Abstract: In accordance with an embodiment, a method includes determining an amplitude of an input signal provided by a capacitive signal source, compressing the input signal in an analog domain to form a compressed analog signal based on the determined amplitude, converting the compressed analog signal to a compressed digital signal, and decompressing the digital signal in a digital domain to form a decompressed digital signal. In an embodiment, compressing the analog signal includes adjusting a first gain of an amplifier coupled to the capacitive signal source, and decompressing the digital signal comprises adjusting a second gain of a digital processing block.
    Type: Application
    Filed: January 24, 2014
    Publication date: May 22, 2014
    Applicant: Infineon Technologies AG
    Inventors: Michael Kropfitsch, Jose Luis Ceballos
  • INTEGRATED CIRCUIT, A SEMICONDUCTOR DIE ARRANGEMENT AND A METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT
    Publication number: 20140138841
    Abstract: An integrated circuit is provided, the integrated circuit including: a chip having a first chip side and a second chip side opposite to the first chip side, the chip having at least one contact area on the second chip side; encapsulation material at least partially covering the chip; and at least one contact via comprising electrical conductive material contacting the at least one contact area and extending through the encapsulation material and through the chip between the first chip side and the second chip side.
    Type: Application
    Filed: November 16, 2012
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Khalil Hosseini, Joachim Mahler, Georg Meyer-Berg
  • PROCESSING ARRANGEMENT AND A METHOD FOR PROCESSING INFORMATION IN A MACHINE-TO-HUMAN COMMUNICATIONS INTERFACE
    Publication number: 20140143858
    Abstract: A processing arrangement in accordance with various embodiments may include: a security element configured to generate a digital image; a display device configured to receive the digital image from the chip card, and to display the digital image; and an input device configured to receive a user input, wherein the user input identifies a part of the digital image, and wherein the input device is further configured to provide the chip card with information indicating which part of the digital image is identified by the user input.
    Type: Application
    Filed: November 16, 2012
    Publication date: May 22, 2014
    Applicant: Infineon Technologies AG
    Inventor: Olaf Brixel
  • Semiconductor Device Assembly Including a Chip Carrier, Semiconductor Wafer and Method of Manufacturing a Semiconductor Device
    Publication number: 20140138833
    Abstract: A semiconductor device includes a chip carrier and a semiconductor die with a semiconductor portion and a conductive structure. A soldered layer mechanically and electrically connects the chip carrier and the conductive structure at a soldering side of the semiconductor die. At the soldering side an outermost surface portion along an edge of the semiconductor die has a greater distance to the chip carrier than a central surface portion. The conductive structure covers the central surface portion and at least a section of an intermediate surface portion tilted to the central surface portion. Solder material is effectively prevented from coating such semiconductor surfaces that are prone to damages and solder-induced contamination is significantly reduced.
    Type: Application
    Filed: November 21, 2012
    Publication date: May 22, 2014
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Philipp Seng, Khalil Hosseini, Anton Mauder