Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.

Abstract: The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

Abstract: The present invention provides a patterned silicon substrate-silicon germanium thin film composite structure comprising a silicon substrate having a patterned structure, a silicon germanium buffer layer positioned on the silicon substrate, a silicon germanium/silicon superlattice layer positioned on the silicon germanium buffer layer and a silicon germanium thin film layer positioned on the silicon germanium/silicon superlattice layer, wherein the silicon germanium/silicon superlattice layer comprises silicon germanium layers and silicon layers which are grown alternately. The present invention also provides a preparation method of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention. The present invention also provides an application of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention in strained silicon devices.

Abstract: The present disclosure relates to a spin wave switch and a filter based on a magnonic crystal. According to one embodiment, a magnonic crystal device may include a ferromagnetic layer and an antiferromagnetic planar periodic structure set on the ferromagnetic layer. The magnonic crystal device of the present disclosure may be used as a spin wave switch to effectively regulate and control the transmission coefficient of the spin wave, or may be used as a spin wave filter to filter the spin wave of a specific frequency.

Abstract: Embodiments of the present disclosure are a pitch-based negative electrode material for a sodium-ion battery and related methods and applications. The method comprises: placing a pitch recursor into a muffle furnace to allow the pitch precursor to experience pre-oxidation for 2 to 6 hours at a temperature ranging from 200° C. to 350° C., to obtain pre-oxidized pitch; placing the pre-oxidized pitch into a high-temperature carbonization furnace, and increasing the temperature to 1300° C. to 1600° C. at a temperature increase speed of 0.5° C./min to 5° C./min, and carrying out thermal treatment on the pre-oxidized pitch in an inert atmosphere for 1 to 10 hours, to allow the pre-oxidized pitch to experience carbonization reactions, oxygen in the pre-oxidized pitch being used for breaking an ordered structure of the pitch during the carbonization of the pre-oxidized pitch, so as to form a wedge-shaped voids disordered structure.

Abstract: Provided is a prelithiation material, comprising a lithium-containing compound and an inorganic non-metallic reductive agent. Further provided is a method for preparing the prelithiation material of the present invention. Further provided is use of the prelithiation material of the present invention in a lithium ion battery. By mixing the prelithiation material provided by the present invention with a positive electrode material or coating the side of a separator near the positive electrode with the same, a battery is assembled, and during first cycle, active lithium can be released so as to compensate active lithium lost from a negative electrode. The prelithiation material provided by the present invention has a good compatibility with currently commercially available positive and negative electrodes, and is very suitable for current secondary lithium ion batteries.

Abstract: Methods and devices are described for performing an all-phase measurement of an ultra-fast laser pulse having a spectral range of greater than one octave. The ultra-fast laser pulse may be split into a first beam comprising a fundamental light with a wavelength ?0 and a second beam comprising a light with a wavelength 2?0. The light with the wavelength 2?0 may be frequency doubled to a light with a wavelength ?0 to generate an interference with the fundamental light. Fourier transform may be performed on an interference spectrum of the interference, and a relative envelope delay (RED) between the fundamental light and the frequency doubled light and a carrier envelope phase (CEP) may be acquired based on a result of the Fourier transform.

Abstract: Provided by the present invention is a magnesium-antimony-based (Mg—Sb-based) thermoelement, a preparation method and application thereof. The Mg—Sb-based thermoelement comprises: a substrate layer of a Mg—Sb-based thermoelectric material positioned in the center of the thermoelement, transitional layers that are attached to the two surfaces of the substrate layer, and two electrode layer that are respectively attached to the surfaces of the two transitional layers; the transitional layers are made of a magnesium-copper alloy and/or magnesium-aluminum alloy, and the electrode layer is made of copper. The transitional layer and the electrode layer which are developed in the present invention and which are suitable for a Mg—Sb-based thermoelectric material have great significance and prospects in application. The electrode layer enable the Mg—Sb-based thermoelectric material to have an opportunity to enter the market and realize commercialization.

Abstract: The invention provides a composite-coated nano-tin negative electrode material, which comprises a tin-based nanomaterial, a nano-copper layer coated on the surface of the tin-based nanomaterial and a conductive protective layer coated on the surface of the nano-copper layer. The nano-copper layer can inhibit the volume expansion of nano-tin, keep the nano-tin material from cracking, avoid direct contact between nano-tin and electrolyte to form stable SEI and increase the conductivity of the electrode. Coating a conductive layer on the surface of the nano-copper layer can effectively inhibit the oxidation of nano-copper, thus improving its electrochemical performance. The composite-coated nano-tin negative electrode material according to the invention is used as a negative electrode material of a lithium-ion battery, has excellent electrochemical performance, and has potential application prospects in portable mobile devices and electric vehicles.

Abstract: This invention relates to a double layer composite-coated nano-silicon negative electrode material, and its preparation methods and use, the negative electrode material comprising: a silicon-based nanoparticle, a copper layer coated on the surface of the silicon-based nanoparticle, and a conductive protective layer coated on the surface of the copper layer. Nano-copper has superplastic ductility and conductivity, and the prior art has proved that lithium ions can penetrate nano-copper; therefore, the copper coating layer has effects of inhibiting the volume expansion of the silicon-based nanoparticle and keeping the silicon-based nanoparticle from cracking so that direct contact between the silicon-based nanoparticle and an electrolyte is effectively avoided and a stable SEI is formed, and increasing the conductivity of the electrode.

Abstract: The present invention provides a patterned silicon substrate-silicon germanium thin film composite structure comprising a silicon substrate having a patterned structure, a silicon germanium buffer layer positioned on the silicon substrate, a silicon germanium/silicon superlattice layer positioned on the silicon germanium buffer layer and a silicon germanium thin film layer positioned on the silicon germanium/silicon superlattice layer, wherein the silicon germanium/silicon superlattice layer comprises silicon germanium layers and silicon layers which are grown alternately. The present invention also provides a preparation method of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention. The present invention also provides an application of the patterned silicon substrate-silicon germanium thin film composite structure of the present invention in strained silicon devices.

Abstract: An X-ray single-pixel camera based on X-ray computational correlated imaging, which belongs to the technical research fields of X-ray computational correlated imaging and X-ray single-pixel imaging. The X-ray single-pixel camera includes: an X-ray modulation system (3), an X-ray modulation control system (4), an X-ray single-pixel detector (5), a main control system unit (6), a time synchronization system (7) and a computational imaging system (8). The main control system unit (6) controls each module through software; the time synchronization system (7) controls synchronization of each module for automatic collection; and the computational imaging system (8) is configured to perform a second-order correlated computation or a compressed sensing computation or a deep learning computation on the signals collected by the X-ray single-pixel detector (5) and a preset modulation matrix, so as to obtain an image of an object under test.

Abstract: An X-ray single-pixel camera based on X-ray computational correlated imaging, which belongs to the technical research fields of X-ray computational correlated imaging and X-ray single-pixel imaging. The X-ray single-pixel camera includes: an X-ray modulation system (3), an X-ray modulation control system (4), an X-ray single-pixel detector (5), a main control system unit (6), a time synchronization system (7) and a computational imaging system (8). The main control system unit (6) controls each module through software; the time synchronization system (7) controls synchronization of each module for automatic collection; and the computational imaging system (8) is configured to perform a second-order correlated computation or a compressed sensing computation or a deep learning computation on the signals collected by the X-ray single-pixel detector (5) and a preset modulation matrix, so as to obtain an image of an object under test.

Abstract: Provided by the present invention is a magnesium-antimony-based (Mg—Sb-based) thermoelenient, preparation method and application thereof. The Mg—Sb-based. thermoelement comprises: a substrate layer of a Mg—Sb-based. thermoelectric material positioned in the center of the thermoelement, transitional layers that are attached to the two surfaces of the substrate layer, and two electrode layer that are respectively attached to the surfaces of the two transitional layers; the transitional layers are made of a magnesium-copper alloy and/or magnesium-aluminum alloy, and the electrode layer is made of copper. The transitional layer and the electrode layer which are developed in the present invention and which are suitable for a Mg—Sb-based thermoelectric material have great significance and prospects in application. The electrode layer enable the Mg—Sb-based thermoelectric material to have an opportunity to enter the market and realize commercialization.

Abstract: Methods and devices are described for performing an all-phase measurement of an ultra-fast laser pulse having a spectral range of greater than one octave. The ultra-fast laser pulse may be split into a first beam comprising a fundamental light with a wavelength ?0 and a second beam comprising a light with a wavelength 2?0. The light with the wavelength 2?0 may be frequency doubled to a light with a wavelength ?0 to generate an interference with the fundamental light. Fourier transform may be performed on an interference spectrum of the interference, and a relative envelope delay (RED) between the fundamental light and the frequency doubled light and a carrier envelope phase (CEP) may be acquired based on a result of the Fourier transform.

Abstract: The present disclosure relates to a magnonic magnetoresistance (MMR) device and an electronic equipment including the same. According to one embodiment, a core structure of a MMR device may include: a first ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI1); a two-dimensional conductive material layer (Spacer) set on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (Ferro-magnetic Insulator, FMI2) set on the two-dimensional conductive material layer. The MMR device of the present disclosure may enhance interface effect in spin electron transmission and thus improve performance of the MMR device.

Abstract: A carbon-based anode material with high ramp capacity, a preparation method therefore, and a use thereof. The method includes placing a carbon source precursor into a crucible and heating to 400° C-1000° C. at a heating rate of 0.2° C./min-30° C./min under an inert atmosphere, wherein the precursor includes any one or a combination of at least two of fossil fuel, biomass, resin, and organic chemicals; and carrying out heat treatment on the precursor at a temperature of 400° C. to 1000° C. for 0.5-48 hours to carbonize the precursor to obtain a carbon-based negative electrode material. The specific surface area of the anode material is less than 10 m2/g. and assembling the obtained electrode material into a sodium ion battery and then carrying out charging and discharging between 0 and 2.5 V, to obtain a voltage curve. The ramp capacity being above 180 mAh/g and the first-cycle Coulombic efficiency is above 75%.

Abstract: A pre-lithiated film and a preparation method therefor and an application thereof. The pre-lithiated film comprises: a 1 ?m-50 ?m base film and a 0.02 ?m-100 ?m pre-lithiated coating coated on the base film; the pre-lithiated coating includes: 1 wt %-99.99 wt % of a pre-lithiated material, 0 wt %-98.99 wt % of a coating material, 0.01 wt %-10 wt % of a binder, 0 wt %-10 wt % of a conductive additive material, 0 wt %-2 wt % of a dispersing agent and 0 wt %-2 wt % of an aid. The pre-lithiated material is a material that can produce an electrochemical reaction to release lithium ions under voltage control.

Abstract: The present invention provides a sulfur-based positive electrode active material for use in a solid-state battery, comprising: 30-80 wt % of Li2S, 10-40 wt % of one or more second lithium compounds selected from LiI, LiBr, LiNO3, and LiNO2, and 0-30 wt % of a conductive carbon material; a method for preparing the sulfur-based positive electrode active material, a positive electrode including the sulfur-based positive electrode active material, and a solid-state battery including the positive electrode. The sulfur-based positive electrode active material and the positive electrode provide a high specific capacity and an increased discharge voltage.

Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.