Abstract: There is provided a method of manufacturing high quality ZnO manufacturing film on silicon (111) substrate, including the following steps: removing silicon oxide on the surface of silicon (111) substrate; depositing metal monocrystal film having 1-10 nm thickness, such as Mg, Ca, Sr, Cd etc, at low temperature; oxiding the metal film at low temperature to obstain metal oxide monocrystal layer; depositing ZnO buffer layer at low temperature; depositing ZnO epitaxial layer at high temperature. The ZnO film is suitable for fabrication of high performance of photoelectron device.

Abstract: A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A?, B?, C? and an output signal line O? are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

Abstract: A method of manufacturing epitaxial material used for GaN based LED with low polarization effect, which includes steps of growing n-type InGaAlN layer composed of GaN buffer layer (2) and n-type GaN layer (3), low polarizing active layer composed of InGaAlN multi-quantum well structure polarized regulating and controlling layer (4) and InGaAlN multi-quantum well structure light emitting layer (5) and p-type InGaAlN layer (6) on sapphire or SiC substrate (1) in turn. The method adds InGaAlN multi-quantum well structure polarized regulating and controlling layer, thus reduces polarization effect of quantum well active region.

Abstract: Polar molecules dominated electrorheological fluids mainly comprising a mixture of dispersed phase of solid particles and/or dispersing liquid medium. The dispersed phase solid particles, on the surface, or the liquid dispersing medium contain polar molecules or polar groups, the dipole moment of which is 0.5-10 deb and the size is between 0.1 nm and 0.8 nm. Dispersed phase solid particles are spherical or nearly spherical, of which the size is 10-300 nm and dielectric constant is higher than 50. The conductance rate of the liquid dispersing medium is lower than 10?8 S/m, and the dielectric constant is lower than 10. The PM-ER fluids possess the characteristics of high yield strength, high dynamic shear strength, low leakage current, the linear dependence of yield strength on electric field, and high yield strength at low electric field, etc. The yield strength improves to almost 100 times of that of ordinary ER fluids and reaches to more than 200 Kpa.

Abstract: The invention relates to modified electrodes for ER fluids prepared by adding a rough, wear-resisting, and low conductive modified layer on the surface of metallic electrodes. The material for the modified layer can be at least one from diamond, alumina, titanium dioxide, carborundum, titanium nitride, nylon, polytetrafluoroethylene, adhesive, and adhesive film. Through the addition of the modified layer, the adhesion of the ER fluid to electrodes is increased so that the shear stress measured near the plates is close to the intrinsic value, which makes the ER fluid applicable, while reducing the leakage current and increasing the breakdown voltage of the ER fluid equipment.

Abstract: The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

Abstract: The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 ?m2˜10000 ?m2; the thickness of the base is comparable to the electron mean free path of material in the layer; the magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector.

Abstract: The present invention concerns a Ce-base amorphous metallic plastics being CeaAlbMc, in which 55?a?75, 5?b?25, 10?c?25, and a+b+c=100; said M is Co, Cu or Ni. Otherwise the metallic plastics could be CedAleCufZg, in which 55?d?75, 5?e?15, 15?f?25, 0.01?g?10, and d+e+f+g=100; said Z is one element selected from Co, Fe, Hf, Mg, Mo, Nb, Sc, Ta, Ti, W, Zn and Zr. The metallic plastic could also be CehAliCujNik, in which 55?h?75, 5?i?15, 15?j?25, 0.01?k<5, and h+i+j+k=100. The Ce-base amorphous metallic plastic has a low glass-transition temperature and a wide super-cooling liquid phase area, therefore possesses a high thermal stability. The material could be deformed, shaped and imprinting working into desired amorphous alloy articles as thermoplastic plastic at a very low temperature.

Abstract: The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

Abstract: this invention relates to an alloy material for data storage of magneto-optical disk (ADSMO), as well as its manufacturing process. ADSMO is based on manganese, bismuth and doped with aluminum atoms and silicon atoms or by aluminum atoms and boron atoms. The above mentioned elements are deposited onto a transparent substrate in a certain sequence using an evaporation process or sputtering process, and then compact hexagonal cyrstalline structures are formed after being annealed in vacuum. ADSMO has a large magneto-optical Kerr rotation, a small size of crystal grains and a stable structure; its manufacturing process is easy and simple.

Abstract: The present invention is a pyroelectric radiation detector using a polyvinylidene fluoride film (PVDF) as the sensitive material and having graphite in contact with one side of the film. The detector can have a planar or a conical cavity configuration. The sensitivity of this detector is in the range of 5 to 10 V/J, and the response time is shorter than 0.5 ms. This detector can be used to directly detect pulse laser radiation within a spectral range of 0.25 .mu.m to 25 .mu.m and having a power density as high as 100 MW/cm.sup.2. The detector is also suitable for other light radiations ranging from violet to infrared wavelength. It can be used, for example, as an infrared detector, as a radiation sensor for measuring temperature, as a detector for a standard radiation meter, and as a light trap for the equivalent black body absorption.