Patents Assigned to INSTITUTE
  • Patent number: 8829039
    Abstract: Disclosed are dihydroindolone compounds which can modulate the activity of protein tyrosine kinases, a method for preparing the same, and pharmaceutical compositions comprising the same. Also disclosed are use of such compounds and pharmaceutical compositions thereof in the treatment and/or prophylaxis of protein tyrosine kinase associated diseases in an organism, particularly in the treatment and/or prophylaxis of tumors and fibroblast proliferation associated diseases.
    Type: Grant
    Filed: May 25, 2009
    Date of Patent: September 9, 2014
    Assignees: Shanghai Institute of Pharmaceutical Industry, Jiangsu Chiatai Tianqing Pharmaceutical Co., Ltd.
    Inventors: Zhedong Yuan, Xiaomin Zhang, Hubo Wang, Xueyan Zhu, Hongjiang Xu, Hui Fu, Wei Song
  • Patent number: 8829536
    Abstract: According to one embodiment, an SiC semiconductor device including a p-type 4H—SiC region formed on at least part of a surface portion of an SiC substrate, a first gate insulating film formed on the 4H—SiC region and formed of a 3C—SiC thin film having p-type dopant introduced therein, a second gate insulating film formed on the first gate insulating film, and a gate electrode formed on the second gate insulating film.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: September 9, 2014
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Tatsuo Shimizu, Tetsuo Hatakeyama
  • Patent number: 8828812
    Abstract: A silicon/germanium (SiGe) heterojunction Tunnel Field Effect Transistor (TFET) and a preparation method thereof are provided, in which a source region of a device is manufactured on a silicon germanium (SiGe) or Ge region, and a drain region of the device is manufactured in a Si region, thereby obtaining a high ON-state current while ensuring a low OFF-state current. Local Ge oxidization and concentration technique is used to implement a Silicon Germanium On Insulator (SGOI) or Germanium On Insulator (GOI) with a high Ge content in some area. In the SGOI or GOI with a high Ge content, the Ge content is controllable from 50% to 100%. In addition, the film thickness is controllable from 5 nm to 20 nm, facilitating the implementation of the device process. During the oxidization and concentration process of the SiGe or Ge and Si, a SiGe heterojunction structure with a gradient Ge content is formed between the SiGe or Ge and Si, thereby eliminating defects.
    Type: Grant
    Filed: September 19, 2012
    Date of Patent: September 9, 2014
    Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy
    Inventors: Jiantao Bian, Zhongying Xue, Zengfeng Di, Miao Zhang
  • Patent number: 8830573
    Abstract: A 4-Pi microscope for imaging a sample, comprising a first objective for focusing a first light beam on the sample at a spatial point one or more Digital Optical Phase Conjugation (DOPC) devices, wherein the DOPC devices include a sensor for detecting the first light beam that has been transmitted through the sample and inputted on the sensor; and a spatial light modulator (SLM) for outputting, in response to the first light beam detected by the sensor, a second light beam that is an optical phase conjugate of the first light beam; and a second objective positioned to transmit the first light beam to the sensor and focus the second light beam on the sample at the spatial point, so that the first light beam and the second light beam are counter-propagating and both focused to the spatial point.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: September 9, 2014
    Assignee: California Institute of Technology
    Inventors: Meng Cui, Changhuei Yang
  • Patent number: 8827502
    Abstract: The present embodiment relates to a metamaterial for deflecting electromagnetic wave, includes a functional layer made up by at least one metamaterial sheet layer, each of the metamaterial sheet layers including a substrate and a number of artificial microstructures attached onto the substrate. The functional layer is divided into several strip-like regions. The refractive indices in all the strip-like regions continually increase along the same direction and there are at least two adjacent first and second regions, wherein, the refractive indices in the first region continually increase from n1 to n2, the refractive indices in the second region continually increase from n3 to n4, and n2>n3. The metamaterial of the present invention that deflects electromagnetic wave has a number of regions disposed thereon. In each region, the refractive indices can continuously increase or decrease so that the electromagnetic waves within the regions will be slowly deflected.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: September 9, 2014
    Assignees: Kuang-Chi Innovative Technology Ltd., Kuang-Chi Institute of Advanced Technology
    Inventors: Ruopeng Liu, Chunlin Ji, Lin Luan, Jinjin Wang
  • Patent number: 8828881
    Abstract: The invention discloses an etch-back method for planarization at the position-near-interface of an interlayer dielectric (ILD), comprising: depositing or growing a thick layer of SiO2 by the chemical vapor deposition or oxidation method on a surface of a wafer; spin-coating a layer of SOG and then performing a heat treatment to obtain a relatively uniform stack structure; perform an etch-back on the SOG using a plasma etching, and stopping when approaching the position-near-interface of SiO2; performing a plasma etch-back on the remaining SOG/SiO2 structure at the position-near-interface until achieving a desired thickness. Since a two-step etching at the position-near-interface is employed, an extremely good smooth surface of the ILD is obtained. That is, a planar and tidy surface of the ILD is obtained not only in the center region, but also even at the edge of the wafer.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: September 9, 2014
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Lingkkuan Meng, Huaxiang Yin
  • Patent number: 8830202
    Abstract: A touch-sensing display apparatus including a touch panel, an environmentally sensitive electronic device and an adhesive layer is provided. The water/oxygen vapor transmission rate of the touch panel is lower than 10?1 g/m2*day, and the touch panel includes a first substrate, a sensing circuit and at least one water/oxygen barrier layer. The first substrate is a first flexible substrate. The sensing circuit and the water/oxygen barrier layer are disposed on the first substrate. The environmentally sensitive electronic device includes a second substrate and a pixel array. The pixel array is disposed on the second substrate and between the first substrate and the second substrate. The adhesive layer is disposed between the touch panel and the environmentally sensitive electronic device. Moreover, a fabricating method of the above-mentioned touch-sensing display apparatus is also provided.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: September 9, 2014
    Assignee: Industrial Technology Research Institute
    Inventor: Kuang-Jung Chen
  • Patent number: 8829537
    Abstract: Disclosed is an integrated apparatus including an isolative substrate, a plurality of driver chips provided on a side of the isolative substrate, a power supply provided on the side of the isolative substrate and electrically connected to the driver chips, and LED chips provided on another side of the isolative substrate and electrically connected to the driver chips. Thus, the driver chips, the power supply and the LED chips are integrated on the isolative substrate. The production is easy. The integrated apparatus is not vulnerable to surges and lightning strikes. Electromagnetic interferences are reduced. Heat radiation of the integrated apparatus is excellent so that the LED chips are protected from thermal effect.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: September 9, 2014
    Assignee: Chung-Shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense
    Inventors: Yang-Kuao Kuo, Chin-Peng Wang, Lea-Hwung Leu
  • Patent number: 8829989
    Abstract: This invention provides a multi-stage amplifier incorporating DC offset cancellation. The amplifier has a plurality of series-connected gain stages each of which comprises a differential amplifier unit generating a pair of differential outputs from a pair of differential inputs. In particular, a trailing stage in the plurality of gain stages comprises a digital DC offset cancellation module configured to compensate for a DC offset of the trailing stage's differential amplifier unit. The digital DC offset cancellation module comprises a comparator coupled to the pair of differential outputs of the trailing stage's differential amplifier unit for receiving such differential outputs as inputs for the comparator. Preferably, the comparator has an inherent DC offset that is substantially small. It is preferable that a non-trailing stage of the amplifier comprises an analog DC offset cancellation module for compensating for a DC offset of the non-trailing stage.
    Type: Grant
    Filed: December 20, 2012
    Date of Patent: September 9, 2014
    Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
    Inventors: Huimin Guo, Kai Cheung Chung, Gang Qian
  • Patent number: 8829621
    Abstract: The present invention relates to a semiconductor substrate, an integrated circuit having the semiconductor substrate, and methods of manufacturing the same.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: September 9, 2014
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Huilong Zhu, Zhijiong Luo, Haizhou Yin, Huicai Zhong
  • Patent number: 8828840
    Abstract: A semiconductor device and a method for manufacturing the same are disclosed. The method comprises: forming at least one trench in a first semiconductor layer, wherein at least lower portions of respective sidewalls of the trench tilt toward outside of the trench; filling a dielectric material in the trench, thinning the first semiconductor layer so that the first semiconductor layer is recessed with respect to the dielectric material, and epitaxially growing a second semiconductor layer on the first semiconductor layer, wherein the first semiconductor layer and the semiconductor layer comprise different materials from each other. According to embodiments of the disclosure, defects occurring during the heteroepitaxial growth can be effectively suppressed.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: September 9, 2014
    Assignee: Chinese Academy of Sciences, Institute of Microelectronics
    Inventors: Zhijiong Luo, Huilong Zhu, Haizhou Yin
  • Patent number: 8831226
    Abstract: The present invention relates to a key update method based on the amount of communication in wireless sensor networks having a hierarchy structure.
    Type: Grant
    Filed: November 14, 2011
    Date of Patent: September 9, 2014
    Assignee: Gwangju Institute of Science and Technology
    Inventors: Saewoom Lee, Kiseon Kim, Jeehoon Lee, Yoondong Sung
  • Patent number: 8828245
    Abstract: A fabricating method of a flexible circuit board includes the following steps. The metal carrier foil with metal oxide layer on its surfaces is provided first. The metal oxide layer is formed from the spontaneous oxidization of the metal carrier foil in ambient air and provides passive protection in a sulfuric acid solution or an acidic copper sulphate solution. A conductive seed layer is electroplated onto the metal oxide layer. A flexible insulating layer is formed onto the conductive seed layer by performing a polyimide casting process. The metal carrier foil is then peeled off from the conductive seed layer, which is supported by the insulating layer. A patterned circuit is formed on the insulating layer by performing photoresist coating, developing and etching.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: September 9, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Chung Chen, Yi-Ling Lo, Hung-Kun Lee, Tzu-Ping Cheng
  • Patent number: 8830930
    Abstract: Provided is a device resource management apparatus in a wireless network, the device resource management apparatus including an access mode selection module to select a predetermined access mode among a plurality of access modes for a device, each of the plurality of access modes determining a type of a medium included in an access route between the device and an opponent device, and a device agency module to obtain an agent profile corresponding to the device when an access route between the device and the opponent device is formed according to the predetermined access mode, and to perform, as a proxy for the device, at least one function defined by the agent profile.
    Type: Grant
    Filed: August 16, 2011
    Date of Patent: September 9, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventor: Pyeong Jung Song
  • Patent number: 8831827
    Abstract: Provided are a method and apparatus for projecting driving information in front of a vehicle with respect to a destination. The method for projecting driving information in front of the vehicle with respect to the destination may include obtaining driving information and controlling a driving information projecting apparatus on the basis of the obtained driving information. The driving information projecting apparatus may include a driving information display unit displaying the obtained driving information and a lighting unit used as a light source 100 for the driving information display unit.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 9, 2014
    Assignee: Korea Institute of Science and Technology
    Inventors: Ig Jae Kim, Jaewon Kim
  • Patent number: 8831052
    Abstract: An apparatus for generating a short-pulse laser using a temporally modulated sideband gain is provided. The apparatus includes a laser diode and an external reflector. By use of a time difference resulted by a nanosecond laser pulse signal at the external reflector, a sideband gain is obtained for generating a short-pulse picosecond laser output.
    Type: Grant
    Filed: May 28, 2013
    Date of Patent: September 9, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Yao-Wun Jhang, Chien-Ming Huang, Hsin-Chia Su, Shih-Ting Lin, Chih-Lin Wang, Hong-Xi Tsau
  • Patent number: 8829336
    Abstract: A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.
    Type: Grant
    Filed: May 3, 2007
    Date of Patent: September 9, 2014
    Assignee: Rochester Institute of Technology
    Inventors: Ryne P. Raffaelle, David M. Wilt
  • Patent number: 8831043
    Abstract: A selective cooperative relaying method, the method including: determining, by a base station, whether a mobile station for which the base station provides a service is the mobile station necessary for direct transmission or is the mobile station necessary for cooperative relaying via a relay station; and selecting, by a base station, mobile stations using a simple relaying scheme, a cooperative transmission diversity scheme, or a cooperative receiving diversity scheme from mobile stations necessary for the cooperative relaying via the relay station.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: September 9, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Bangwon Seo, Heesoo Lee, Jae Young Ahn, Hyun Kyu Chung, Chung Gu Kang, Hyun Seok Ryu, Jung Jae Yu
  • Patent number: 8827066
    Abstract: Provided is a package automation apparatus including: a detection unit configured to detect package information of a package conveyed to a tray; a chute operation unit configured to operate a package loading chute so that the package is loaded on at least one of a plurality of sorting spaces formed at a pallet adjacent to the tray; and a control unit configured to transfer an operation control signal of the package loading chute to the chute operation unit so that the package is loaded on any one of the plurality of sorting spaces, based on the package information, in order to easily sort the package automatically.
    Type: Grant
    Filed: May 17, 2013
    Date of Patent: September 9, 2014
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Young Won Kim, Dong Gil Na, Hoon Jung
  • Patent number: 8828093
    Abstract: Apparatus and methods are provided for determining a locomotion mode that can be provided to a controller of a lower prosthesis limb in order to accurately control the prosthesis. One or more prosthesis sensors are provided that break a gait cycle down into a plurality of gait phases. EMG sensors provide signals to a processor that directs them to a gait phase specific classifier that is used to determine a particular locomotion mode for the wearer. With the locomotion mode accurately known, the prosthetic device can be accurately controlled.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: September 9, 2014
    Assignee: Rehabilitation Institute of Chicago
    Inventors: Todd Kuiken, He Huang