Patents Assigned to Instruments Incorporated
  • Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technology
    Patent number: 6548337
    Abstract: A method is described for forming a high gain bipolar junction transistor in a optimized CMOS integrated circuit. The bipolar junction transistor comprises a compensated base region (130) which is formed by forming the p-well region (20) and the n-well region (30) in a common substrate region.
    Type: Grant
    Filed: October 12, 2001
    Date of Patent: April 15, 2003
    Assignee: Instruments Incorporated
    Inventors: Chi-Cheong Shen, David B. Spratt, Michael D. Aragon, Kamel Benaissa