Abstract: Analog switch circuits, methods for use with analog switch circuits, and devices and systems including analog switch circuits are disclosed herein. Such analog switch circuits include an analog switch input terminal (In), an analog switch output terminal (Out), and an analog switch control terminal (Ctl). During a normal-voltage condition, the input terminal (In) of the analog switch circuit is selectively connected and disconnected to/from the output terminal (Out) in dependence on a control signal received at the control terminal (Ctl). During an over-voltage condition, the input terminal (In) is disconnected from the output terminal (Out) regardless of the control signal received at the control terminal (Ctl). Additionally, during an under-voltage condition, the input terminal (In) is disconnected from the output terminal (Out) regardless of the control signal received at the analog switch control terminal (Ctl).

Abstract: A semiconductor structure comprises a top metal layer, a bond pad formed on the top metal layer, a conductor formed below the top metal layer, and an insulation layer separating the conductor from the top metal layer. The top metal layer includes a sub-layer of relatively stiff material compared to the remaining portion of the top metal layer. The sub-layer of relatively stiff material is configured to distribute stresses over the insulation layer to reduce cracking in the insulation layer.

Abstract: An integrated circuit, including a junction barrier Schottky diode, has an N type well, a P-type anode region in the surface of the well, and an N-type Schottky region in the surface of the well and horizontally abutting the anode region. A first silicide layer is on and makes a Schottky contact to the Schottky region and is on an adjoining anode region. A second silicide layer of a different material than the first silicide is on the anode region. An ohmic contact is made to the second silicide on the anode region and to the well.

Abstract: A configurable photo detector circuit comprises a photo detector array including a plurality of photo detectors coupled to a plurality of amplifiers. A method for programming a detection pattern of the configurable photo detector circuit comprises selecting a first detection pattern for the photo detector array, generating first signals to create the first selected detection pattern, and applying the first generated signals to the photo detector circuit to implement the first selected detection pattern.

Abstract: Correcting phase error in a two-channel TIADC system in a manner that is independent of the Nyquist zone(s) occupied by the input signal. In the preferred approach this is done using the gradient of a phase error estimate. The gradient may be determined from a simplified expression of linear regression; the direction of the adaptation is then controlled by the sign of the gradient. The adaptive algorithm converges to the optimal value regardless of the Nyquist zone occupied by the input signal.

Abstract: A method for controlling performance of an integrated circuit using a zero-pin serial interface is provided. The method comprises identifying a desired performance characteristic of the circuit, and transmitting a first change mode signal to the circuit on a first pin to cause the circuit to enter an instruction reception mode, with the first pin performing differently during a normal operation mode. The method also comprises transmitting a performance adjusting instruction to the circuit on a second pin when the circuit is in the instruction reception mode, with the second pin performing differently during the normal operation mode, and transmitting a second change mode signal to the circuit on the first pin to cause the circuit to enter the normal operation mode. An output performance of the circuit is compared to the desired performance characteristic, with the output performance being the performance of the circuit during the normal operation mode.

Abstract: A controller configurable to operate in either in an NVDC mode or a standard mode. The controller includes mode logic that detects a mode value indicative of the selected mode and that asserts a corresponding mode signal, and control logic that is configured to operate according to the selected battery charging mode based on the mode signal and that provides a control signal accordingly. In the standard mode, the control signal is in either an on or off state depending upon presence of an external adapter and the charge state of the battery. In the NVDC mode, the control signal may operate in a linear mode if the battery is deeply discharged. A battery detector provides a battery indication that is used to switch the regulation operating point of an external system voltage. A power monitor output provides an indication of power being provided via the system voltage.

Abstract: Hysteretic performance with fixed frequency may be achieved in controlling a power/voltage regulator, by adapting fixed frequency PWM (Pulse Width Modulation) to current-mode hysteretic control. In steady state, the current waveform may be inferred without having to measure the current. In current-mode control, the current may be adjusted proportional to the error voltage. The change in load current may be related to the change in duty-cycle, and the change in duty-cycle may be related to the error voltage, with the change in duty-cycle expressed as a function of the error voltage, to establish current-mode control. This current-mode control may be adapted to perform current-mode hysteretic, if instead of duty-cycle, the same duty-cycle or current shift was effected by a change in phase. A fraction of ripple current (Forc) may be defined as a specified fraction of the peak-to-peak ripple current, establishing a linear relationship between the Forc and the ripple current.

Abstract: A system according to an embodiment of the present invention includes one or more first optical sensors and one or more second optical sensors. The first optical sensor(s) each include a photodetector region and a plurality of first slats over the photodetector region. The second optical sensor(s) each include a photodetector region and a plurality of second slats over the photodetector region, wherein the second slats have a different configuration than the first slats. For example, the second slats can be orthogonal relative to the first slats. For another example, the first slats can slant in a first direction, and the second slats can slant in a second direction generally opposite the first direction. Currents produced by the first optical sensor(s) and the second optical sensor(s), which are indicative of light incident on the optical sensors, are useful for distinguishing between movement in at least two different directions.

Abstract: Point-of-load (POL) regulators may be configured as multiphase POL DC-to-DC (direct current to direct current) converters, operating in a multiphase configuration in order to boost the total current available to a system. Current balancing may be performed by utilizing an active low bandwidth current sharing algorithm that uses matched artificial line resistance (droop resistance) while maintaining multi-loop stability during both steady-state and dynamic transient states. The current sharing algorithm may be facilitated through digital communication between the devices, where the digital bus may be a single wire bus, a parallel bus or a clock-and-data bus.

Abstract: A system and method for controlling an over current protection trip point for a voltage regulator includes an input for receiving a monitored operating parameter of the voltage regulator. Control logic responsive to this input generates a digital current control signal. A digital to analog controller converts the digital current control signal to an analog current control signal and this analog current control signal is used for controlling a current source for generating a current that establishes the over current protection trip point of the voltage regulator.

Abstract: A circuit can compensate for intra pair skew or mode conversion in a channel by applying a second or corrective mode conversion effect that counters the channel's mode conversion. The circuit can process the common mode signal with a frequency dependent filter prior to injection back into the differential mode. The circuit can implement the reverse mode conversion with passive circuits using integrated resistors and metal oxide semiconductor (MOS) switches. In certain embodiments, such actions can proceed effectively without necessarily consuming active power.

Abstract: Exemplary embodiments provide structures and methods for power devices with integrated clamp structures. The integration of clamp structures can protect the power device, e.g., from electrical overstress (EOS). In one embodiment, active devices can be formed over a substrate, while a clamp structure can be integrated outside the active regions of the power device, for example, under the active regions and/or inside the substrate. Integrating clamp structure outside active regions of power devices can maximize the active area for a given die size and improve robustness of the clamped device since the current will spread in the substrate by this integration.

Abstract: An AC to DC converter for converting an AC input voltage to a regulated DC output voltage using a Z-type converter and rectified switches. The Z-type converter includes first and second inductors, a capacitor, two rectified switches and a load device coupled in a cross-coupled configuration. The Z-type converter may be configured according to a Z-source or a quasi-Z-source rectifier network. The AC input voltage is applied to an input and the DC output voltage is developed across the load device. Each rectified switch may be configured as a series-coupled diode and electronic switch or as a dual gate GaN device with a shorted gate. A control network monitors the DC output voltage and develops a control signal for controlling the first and second rectified switches to regulate the DC output voltage. The control network may control the rectified switches based on duty cycle control or current mode control.

Abstract: A phase current sharing network that adjusts operation of a current mode multiphase switching regulator in which the phase current sharing network includes multiple synthetic ripple networks and a current share network. The regulator develops phase currents including ripple currents through corresponding phase inductors as controlled by corresponding pulse control signals. Each synthetic ripple networks develops a corresponding ripple voltage that simulates a corresponding phase ripple current and uses the ripple voltages to develop the pulse control signals. The current share network adjusts each ripple voltage by a combined adjustment value. The combined adjustment value is a combination of phase adjustment values in which each phase adjustment value is based on a difference between a corresponding one of ripple voltage and a reference voltage. Transconductance amplifiers may be used to convert the voltage differences to current adjust values applied to the ripple capacitors developing the ripple voltages.

Abstract: Exemplary embodiments provide a solar cell device, and method for forming the solar cell device by integrating a switch component into a solar cell element. The solar cell element can include a solar cell, a solar cell array and/or a solar cell panel. The integrated solar cell element can be used for a solar sensor, while the solar sensor can also use discrete switches for each solar cell area of the sensor. Exemplary embodiments also provide a connection system for the solar cell elements and a method for super-connecting the solar cell elements to provide a desired connection path or a desired power output through switch settings. The disclosed connection systems and methods can allow for by-passing underperforming solar cell elements from a plurality of solar cell elements. In embodiments, the solar cell element can be extended to include a battery or a capacitor.

Abstract: Monolithic optical sensor devices, and methods for fabricating such devices, are described herein. In an embodiment, a semiconductor wafer substrate includes a plurality of photodetector (PD) regions. A wafer-level inorganic dielectric optical filter is deposited and thereby formed over at least a subset of the plurality of PD regions. One or more wafer-level organic color filter(s) is/are deposited and thereby formed on one or more selected portion(s) of the wafer-level inorganic dielectric optical filter that is/are over selected ones of the PD regions. For example, an organic red filter, an organic green filter and an organic blue filter can be over, respectively, portions of the wafer-level inorganic dielectric optical filter that are over first, second and third PD regions.

Abstract: An electronic system, a reduced-noise reference voltage platform for a voltage converter device, and a method of manufacture of a reduced-noise reference voltage platform for a voltage converter device are disclosed. For example, the reduced-noise reference voltage (e.g., ground) platform includes a first conductor unit, a second conductor unit, and an insulator unit interposed between a first surface of the first conductor unit and a first surface of the second conductor unit. The reduced-noise reference voltage platform also includes a phase terminal connected to the first conductor unit, and a reference voltage (e.g., ground) terminal connected to the second conductor unit, wherein a second surface of the second conductor unit forms a platform coupled to the reference voltage (e.g., ground).

Abstract: A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of dielectric. Removing portions of the gate material layer to form a first and second gate material regions of predetermined lateral lengths. Introducing a first conductivity type dopant in the substrate to form a top gate using first edges of the first and second gate material regions as masks, Introducing a second conductivity dopant of high dopant density in the substrate to form a drain region adjacent the surface of the substrate using a second edge of the second gate material region as a mask to form a first edge of the drain region, wherein a spaced distance between the top gate and the drain region is determined by the lateral length of the second gate material region.

Abstract: A method of forming a MOSFET is provided. The method comprises forming a relatively thin layer of dielectric on a substrate. Depositing a gate material layer on the relatively thin layer of dielectric. Removing portions of the gate material layer to form a first and second gate material regions of predetermined lateral lengths. Introducing a first conductivity type dopant in the substrate to form a top gate using first edges of the first and second gate material regions as masks, Introducing a second conductivity dopant of high dopant density in the substrate to form a drain region adjacent the surface of the substrate using a second edge of the second gate material region as a mask to form a first edge of the drain region, wherein a spaced distance between the top gate and the drain region is determined by the lateral length of the second gate material region.