Patents Assigned to JSR Corporation
  • Rubber composition, production method therefor and tire
    Patent number: 8962760
    Abstract: Objects of the present invention are to provide a rubber composition that can obtain a rubber elastic body having small rolling resistance and excellent impact resilience and a method for producing the same, and to provide a tire having small rolling resistance and excellent impact resilience. The rubber composition of the present invention is obtained by kneading a conjugated diene polymer (A) having a group with bonding reactivity to silica only at one site of one molecule of the polymer, a polymer (B) having groups with bonding reactivity to silica at a plurality of sites of one molecule of the polymer, and a filler (C) containing silica.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: February 24, 2015
    Assignee: JSR Corporation
    Inventors: Takeshi Yuasa, Koji Okada
  • RESIST PATTERN-FORMING METHOD
    Publication number: 20150050600
    Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
    Type: Application
    Filed: January 17, 2014
    Publication date: February 19, 2015
    Applicant: JSR Corporation
    Inventors: Yusuke ANNO, Takashi MORI, Hirokazu SAKAKIBARA, Taiichi FURUKAWA, Kazunori TAKANASHI, Hiromitsu TANAKA, Shin-ya MINEGISHI
  • Method for forming resist pattern, and composition for forming resist underlayer film
    Patent number: 8956807
    Abstract: A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: February 17, 2015
    Assignee: JSR Corporation
    Inventors: Hiromitsu Tanaka, Kazunori Takanashi, Shinya Minegishi, Takashi Mori, Tomoaki Seko, Jyunya Suzuki
  • Rubber composition and process for production thereof, and tire
    Patent number: 8946349
    Abstract: A rubber composition that can be used in applications such as automotive tires and can improve the fuel efficiency performance and driving stability of automobiles and the like, a method for producing a rubber composition, and a tire using the same are provided.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: February 3, 2015
    Assignee: JSR Corporation
    Inventors: Koji Okada, Ryoji Tanaka, Yoshiyuki Udagawa
  • Chemical-mechanical polishing pad and chemical-mechanical polishing method
    Patent number: 8944888
    Abstract: A chemical mechanical polishing pad includes a polishing layer, a recess being formed in a polishing surface of the polishing layer, the polishing layer including a surface layer that forms at least an inner side of the recess, and a ratio (D1/D2) of an average opening ratio D1(%) to an average opening ratio D2(%) being 0.01 to 0.5, the average opening ratio D1 being an average opening ratio of the inner side of the recess when the polishing layer has been immersed in water at 23° C. for 1 hour, and the average opening ratio D2 being an average opening ratio of a cross section of the polishing layer that does not intersect the surface layer when the cross section has been immersed in water at 23° C. for 1 hour.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: February 3, 2015
    Assignee: JSR Corporation
    Inventors: Kotaro Kubo, Yukio Hosaka, Takahiro Okamoto
  • RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION
    Publication number: 20150010866
    Abstract: A resist pattern-forming method includes forming a resist film using a photoresist composition. The resist film is exposed. The exposed resist film is developed. The photoresist composition includes an acid generator and a polymer. The acid generator generates a protonic acid upon application of exposure light. The protonic acid generates a proton. The polymer includes a first structural unit which includes a first group. The first group and the proton form a cationic group. The polymer substantially does not include a structural unit which includes an acid-labile group.
    Type: Application
    Filed: September 19, 2014
    Publication date: January 8, 2015
    Applicant: JSR Corporation
    Inventors: Hitoshi Osaki, Hayato Namai, Shinya Minegishi
  • Rubber composition, production method therefor and tire
    Patent number: 8927656
    Abstract: Objects of the present invention are to provide a rubber composition that can obtain a rubber elastic body having small rolling resistance and excellent impact resilience and a method for producing the same, and to provide a tire having small rolling resistance and excellent impact resilience. The rubber composition of the present invention is obtained by kneading a conjugated diene polymer (A) having a group with bonding reactivity to silica only at one site of one molecule of the polymer, a polymer (B) having groups with bonding reactivity to silica at a plurality of sites of one molecule of the polymer, and a filler (C) containing silica.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: January 6, 2015
    Assignee: JSR Corporation
    Inventors: Takeshi Yuasa, Koji Okada
  • Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition
    Patent number: 8927201
    Abstract: A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: January 6, 2015
    Assignee: JSR Corporation
    Inventors: Kazunori Takanashi, Yoshio Takimoto, Takashi Mori, Kazuo Nakahara, Masayuki Motonari
  • Double patterning method
    Patent number: 8927200
    Abstract: A double patterning method includes providing a first resist film on a substrate using a first photoresist composition. The first resist film is exposed. The exposed first resist film is developed using a first developer to form a first resist pattern. A second resist film is provided in at least space areas of the first resist pattern using a second photoresist composition. The second resist film is exposed. The exposed second resist film is developed using a second developer that includes an organic solvent to form a second resist pattern. The first resist pattern is insoluble or scarcely soluble in the second developer.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: January 6, 2015
    Assignee: JSR Corporation
    Inventors: Kanako Meya, Takeo Shioya, Motoyuki Shima
  • RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME
    Publication number: 20150004547
    Abstract: A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
    Type: Application
    Filed: September 16, 2014
    Publication date: January 1, 2015
    Applicant: JSR Corporation
    Inventors: Gouji WAKAMATSU, Masafumi HORI, Kouichi FUJIWARA, Makoto SUGIURA
  • Radiation-sensitive resin composition
    Patent number: 8921027
    Abstract: A radiation-sensitive resin composition includes an acid-labile group-containing resin, and a compound shown by the following general formula (i). R1 represents a hydrogen atom or the like, R2 represents a single bond or the like, R3 represents a linear or branched unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms or the like, and X+ represents an onium cation.
    Type: Grant
    Filed: December 15, 2011
    Date of Patent: December 30, 2014
    Assignee: JSR Corporation
    Inventors: Ryuichi Serizawa, Nobuji Matsumura, Hirokazu Sakakibara
  • Radiation-sensitive resin composition
    Patent number: 8916333
    Abstract: A radiation-sensitive resin composition includes a polymer and a photoacid generator. The polymer includes a first structural unit shown by a formula (a1), a second structural unit shown by a formula (a2), and a third structural unit having a lactone structure. A content of the first structural unit in the polymer being 50 mol % or more based on total structural units included in the polymer. The first structural unit is preferably a structural unit shown by a formula (a1-1).
    Type: Grant
    Filed: September 28, 2012
    Date of Patent: December 23, 2014
    Assignee: JSR Corporation
    Inventors: Hiroshi Tomioka, Noboru Otsuka, Akimasa Soyano
  • PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM
    Publication number: 20140371466
    Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.
    Type: Application
    Filed: September 4, 2014
    Publication date: December 18, 2014
    Applicant: JSR Corporation
    Inventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
  • PATTERN-FORMING METHOD
    Publication number: 20140363773
    Abstract: A radiation-sensitive resin composition includes a resin including a repeating unit shown by a following general formula (1), a photoacid generator and a photodisintegrating base shown by a following general formula (8). R1 represents a hydrogen atom or a methyl group, and each of R2s individually represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, a linear or branched alkyl group having 1 to 4 carbon atoms, or the like. Each of R18 to R20 individually represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group or a halogen atom, and Z? represents OH?, R—COO?, R—SO3? or an anion shown by a following formula (10), wherein R represents an alkyl group, an aryl group or an alkaryl group.
    Type: Application
    Filed: August 21, 2014
    Publication date: December 11, 2014
    Applicant: JSR Corporation
    Inventors: Atsushi Nakamura, Tsutomu Shimokawa, Junichi Takahashi, Takayoshi Abe, Tomoki Nagai, Tomohiro Kakizawa
  • Positive tone organic solvent developed chemically amplified resist
    Patent number: 8900802
    Abstract: Provided is a method for developing positive-tone chemically amplified resists with an organic developer solvent having at least one polyhydric alcohol, such as ethylene glycol and/or glycerol, alone or in combination with an additional organic solvent, such as isopropyl alcohol, and/or water. The organic solvent developed positive tone resists described herein are useful for lithography pattern forming processes; for producing semiconductor devices, such as integrated circuits (IC); and for applications where basic solvents are not suitable, such as the fabrication of chips patterned with arrays of biomolecules or deprotection applications that do not require the presence of acid moieties.
    Type: Grant
    Filed: February 23, 2013
    Date of Patent: December 2, 2014
    Assignees: International Business Machines Corporation, JSR Corporation
    Inventors: Robert D. Allen, Ramakrishnan Ayothi, Luisa D. Bozano, William D. Hinsberg, Linda K. Sundberg, Sally A. Swanson, Hoa D. Truong, Gregory M. Wallraff
  • Radiation-sensitive resin composition
    Patent number: 8895223
    Abstract: The radiation-sensitive resin composition includes a compound represented by a following formula (1), and a resin. The resin has an acid-dissociable group, is insoluble or hardly soluble in an alkali, and turns to be soluble in an alkali when the acid-dissociable group is dissociated. R represents a hydrogen atom or a hydrocarbon group having 1 to 20 carbon atoms, R1 represents a hydrocarbon group having 1 to 20 carbon atoms or the like, R2 to R5 each independently represent an alkyl group having 1 to 4 carbon atoms, an alicyclic hydrocarbon group having 4 to 20 carbon atoms, or the like, and R6 represents a halogen atom or the like.
    Type: Grant
    Filed: March 23, 2012
    Date of Patent: November 25, 2014
    Assignee: JSR Corporation
    Inventors: Mitsuo Sato, Kazuo Nakahara, Hiromitsu Nakashima
  • Composition for formation of upper layer film, and method for formation of photoresist pattern
    Patent number: 8895229
    Abstract: A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R1 is hydrogen or the like; R2 is single bonds or the like; and R3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: November 25, 2014
    Assignee: JSR Corporation
    Inventors: Yukio Nishimura, Norihiko Sugie, Hiromitsu Nakashima, Norihiro Natsume, Daita Kouno
  • Radiation-sensitive resin composition
    Patent number: 8889335
    Abstract: A radiation-sensitive resin composition includes a compound represented by a formula (1), and a polymer that serves as a base resin. R1 is a monovalent group that includes at least two groups of —CO—, —NH—, —S—, and —SO2—, the at least two groups being each identical or different. A is a divalent hydrocarbon group or a divalent fluorohydrocarbon group having 1 to 5 carbon atoms. R is a fluorine atom or a hydrogen atom. a is an integer from 1 to 4. In a case where a plurality of R are present, each of the plurality of R is either identical or different. M+ is a monovalent cation.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: November 18, 2014
    Assignee: JSR Corporation
    Inventor: Ken Maruyama
  • Substrate treating method, stack and semiconductor device
    Patent number: 8889524
    Abstract: A method that includes, in the sequence set forth, (1) temporarily fixing a substrate onto a support via a temporary fixing material including a central section (A) having two or more layers and a peripheral section (B) with solvent resistance, section (B) being in contact with a peripheral portion of the support on the substrate side and with a peripheral portion of the substrate on the support side, section (A) being in contact with a central portion of the support on the substrate side and with a central portion of the substrate on the support side, the temporary fixing thus resulting in a stack in which section (A) is covered with the support, section (B) and the substrate; (2) processing the substrate and/or transporting the stack; (3) dissolving section (B) with a solvent; and (4) heating the residue of the temporary fixing material and separating the substrate from the support.
    Type: Grant
    Filed: May 1, 2013
    Date of Patent: November 18, 2014
    Assignee: JSR Corporation
    Inventors: Seiichirou Takahashi, Hirofumi Gotou
  • Radiation-sensitive resin composition and radiation-sensitive acid generating agent
    Patent number: 8889336
    Abstract: A radiation-sensitive resin composition includes a compound represented by a formula (1), and a base polymer. A represents —CO— or —CH2—. R1 represents a hydrocarbon group having 1 to 30 carbon atoms, a heterocyclic group having 3 to 30 ring atoms, or a combination of a first group and a second group. The first group is —CO—, —COO—, —OCO—, —O—CO—O—, —NHCO—, —CONH—, —NH—CO—O—, —O—CO—NH—, —NH—, —S—, —SO—, —SO2—, —SO2—O— or a combination thereof, and the second group is a hydrocarbon group having 1 to 30 carbon atoms, a heterocyclic group having 3 to 30 ring atoms or a combination thereof. A part or all of hydrogen atoms included in the hydrocarbon group and the heterocyclic group are not substituted or substituted. M+ represents a monovalent cation.
    Type: Grant
    Filed: May 30, 2013
    Date of Patent: November 18, 2014
    Assignee: JSR Corporation
    Inventor: Ken Maruyama