Abstract: A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer defects, and in turn capable of forming a pattern having a fine and favorable shape. A composition for pattern formation contains a block copolymer that forms a phase separation structure by directed self-assembly, and a solvent, in which the block copolymer has a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of the main chain and links to the first block, in which the first group is a monovalent group that forms a compound having C log P of no less than 2.4 provided that a methyl group is bonded thereto.

Abstract: A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

Abstract: A resist pattern-forming method is provided, including: providing a resist film using a photoresist composition; exposing the resist film; and developing the resist film exposed, the photoresist composition containing a polymer having a weight average molecular weight of no less than 1,000 and no greater than 7,500 and having a structural unit that includes an acid-labile group that is dissociated by an action of an acid, a radiation-sensitive acid generator and a solvent composition, and the photoresist composition having a content of solids of no less than 20% by mass and no greater than 60% by mass. The photoresist composition preferably has a viscosity of no less than 50 mPa·s and no greater than 150 mPa·s at 25° C.

Abstract: A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. R1 represents an alkali-labile group. A represents an oxygen atom, —NR?—, —CO—O—# or —SO2—O—##, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R? represents a hydrogen atom or an alkali-labile group, and “#” and “##” each indicate a bonding hand bonded to R1.

Abstract: A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; M+ represents a monovalent cation; and R3 represents a monovalent organic group having 1 to 30 carbon atoms.

Abstract: Provided is a cell adhesion inhibitor which exhibits low cytotoxicity and an excellent cell adhesion prevention effect; a tool and an apparatus each having a surface modified through application of the cell adhesion inhibitor thereto; a method for producing each of the surface-modified tool and apparatus; a biomedical structure and a production method therefor; and a microchannel device and a production method therefor. The invention provides a cell adhesion inhibitor comprising, as an active ingredient, a polymer comprising a repeating unit having a sulfinyl group in a side chain thereof.

Abstract: A liquid immersion lithography upper-layer film-forming composition includes (A) a polymer that includes a structural unit (I) shown by the following formula (1), and (S) a solvent. R1 in the formula (1) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. The polymer (A) preferably further includes a structural unit (II) that includes a sulfo group. The polymer (A) preferably further includes a structural unit (III) shown by the following formula (3). R2 in the formula (3) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R3 represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom.

Abstract: A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

Abstract: A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

Abstract: To provide a copolymer latex having a small particle size, which has a sufficient adhesion strength as a binder and a low viscosity and excellent handling properties in a composition containing a filler and the like, a composition for coating paper using the copolymer latex, and a coated paper having a coating layer formed by the composition. A copolymer latex contains a copolymer comprising: (A) 20 to 80% by mass of a structural unit derived from an aliphatic conjugated diene monomer, (B) 4 to 15% by mass of a structural unit derived from an unsaturated carboxylic acid monomer, and (C) 5 to 76% by mass of a structural unit derived from other copolymerizable monomer, wherein the total of (A), (B) and (C) being 100% by mass, and has a number average particle size of 30 to 80 nm by measurement with a transmission electron microscope, and has a viscosity of 50 to 400 mPa·s at a solid content of 48% by mass.

Abstract: In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Abstract: A photoresist composition includes a polymer that includes a first structural unit shown by a formula (1), and an acid generator. R1 represents a hydrogen atom, a fluorine atom, a methyl group, or a trifluoromethyl group. R2 represents a divalent hydrocarbon group having 1 to 10 carbon atoms. A represents —COO—*, —OCO—*, —O—, —S—, or —NH—, wherein “*” indicates a site bonded to R3. R3 represents a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms. The polymer preferably further includes a second structural unit that includes an acid-labile group.

Abstract: A stack includes a substrate material that has a circuit surface and that is temporarily fixed on a support via a temporary fixing material. The temporary fixing material includes a temporary fixing material layer (I) that is in contact with the circuit surface of the substrate material and a temporary fixing material layer (II) that is formed on the support-facing surface of the layer (I). The temporary fixing material layer (I) is formed of a temporary fixing composition (i) that includes a thermoplastic resin (Ai), a polyfunctional (meth)acrylate compound (Bi), and a radical polymerization initiator (Ci), and the temporary fixing material layer (II) is formed of a temporary fixing composition (ii) that includes a thermoplastic resin (Aii) and a release agent (Dii).

Abstract: A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; M+ represents a monovalent cation; and R3 represents a monovalent organic group having 1 to 30 carbon atoms.

Abstract: A method for processing a structure. The structure is formed and includes a substrate, a substructure having a sidewall and disposed on the substrate, a first polymer structure disposed on the substrate, and a second polymer structure disposed on the substrate such that the first polymer structure is disposed between the sidewall and the second polymer structure. An aspect ratio of the first polymer structure, the second polymer structure, or both is reduced in a reducing step. One polymer structure (i.e., the first polymer structure or the second polymer structure) is selectively removed from the structure such that a remaining polymer structure (i.e., the second polymer structure or the first polymer structure) remains disposed on the external surface of the substrate after the one polymer structure has been selectively removed, wherein the aspect ratio of the remaining polymer structure was reduced in the reducing step.

Abstract: A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

Abstract: A red pixel has a chromaticity coordinate in the CIE colorimetric system in use by a light emitting element containing quantum dots as a light source, satisfying 0.670?x?0.680, and a film thickness of 3.0 ?m or less. A green pixel has a chromaticity coordinate in the CIE colorimetric system in use by the light emitting element as a light source, satisfying 0.690?x?0.710, and a film thickness of 3.0 ?m or less. The color filter has at least one of the red pixel and the green pixel. A display device comprises a color filter having at least one of the red pixel and the green pixel, and the light emitting element containing quantum dots.

Abstract: A radiation-sensitive resin composition includes an acid generating agent to generate a compound represented by a following formula (1) by irradiation with a radioactive ray. In the formula (1), R1 represents a monovalent organic group having 1 to 20 carbon atoms. R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. The compound represented by the formula (1) is preferably a compound represented by a following formula (1-1). In the formula (1-1), R2 is as defined in the above formula (1). X represents an electron attractive group. R3 represents a monovalent organic group having 1 to 20 carbon atoms.

Abstract: A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Ar1 and Ar2 each independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract: A radiation-sensitive resin composition includes an acid generating agent to generate a compound represented by a following formula (1) by irradiation with a radioactive ray. In the formula (1), R1 represents a monovalent organic group having 1 to 20 carbon atoms. R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. The compound represented by the formula (1) is preferably a compound represented by a following formula (1-1). In the formula (1-1), R2 is as defined in the above formula (1). X represents an electron attractive group. R3 represents a monovalent organic group having 1 to 20 carbon atoms.