Abstract: The present invention provides a positive electrode active material for lithium ion batteries having excellent battery property. The positive electrode active material for lithium ion batteries is represented by composition formula: LixNi1?yMyO2+?, wherein M is Co as an essential component and at least one species selected from a group consisting of Sc, Ti, V, Cr, Mn, Fe, Cu, Zn, Ga, Ge, Al, Bi, Sn, Mg, Ca, B and Zr, 0.9?x?1.2, 0<y?0.7, ?>0.05, and an average particle size (D50) is 5 ?m to 15 ?m.

Abstract: A carrier-attached copper foil having good circuit formability is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order, the number of crystal grains per unit cross-sectional area of the ultra-thin copper layer in the through-thickness direction is 0.1 to 5 grains/?m2, and a ten point average roughness Rz of a surface on a side of the ultra-thin copper layer is 0.1 to 2.0 ?m.

Abstract: Copper sulfate which includes a Fe with a concentration of 0.08 ppm by mass or less.

Abstract: In the electrolytic refining of lead in a sulfamate bath, the production of a white residue is suppressed, and a decrease in the lead concentration in the electrolytic solution is suppressed. A method for electrolytically refining lead in a sulfamate bath, comprising performing electrolytic refining at a decomposition rate of sulfamic acid controlled at 0.06%/day or less.

Abstract: An object of the present invention is to provide a method for recovering gold in an ore or a refining intermediate by sufficiently leaching gold in a raw material resulting from the ore or the refining intermediate in an acidic solution containing a copper ion, an iron ion and a halide ion, which can contribute to improve the recovery rate of gold.

Abstract: There is provided a copper-titanium alloy with large fluctuations in Ti concentration. The copper-titanium alloy for electronic components contains 2.0 to 4.0% by mass of Ti and, as a third element, 0 to 0.5% by mass in total of one or more selected from a group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P, with a balance being copper and unavoidable impurities, wherein when crystal grains having <100> orientation in a section parallel to a rolling direction are subjected to area analysis of Ti concentration in a matrix phase, a difference between a maximum Ti concentration and a minimum Ti concentration is 5 to 16% by mass.

Abstract: There is provided a titanium-copper alloy in which the adhesion strength with solder can be increased. The titanium-copper alloy comprises a base material and a plating layer provided on a surface of the base material, wherein the base material contains 1.5 to 5.0% by mass of Ti with a balance consisting of copper and unavoidable impurities, and the plating layer is selected from the group consisting of a Ni plating layer, a Co plating layer, and a Co—Ni alloy plating layer.

Abstract: Copper sulfate which includes an Al with a concentration of 0.08 ppm by mass or less.

Abstract: An Fe-based magnetic material sintered compact containing BN, wherein the Fe-based magnetic material sintered compact has an oxygen content of 4000 wtppm or less. The present invention provides a sintered compact which enables the formation of a magnetic thin film in a thermally assisted magnetic recording media, and in which the generation of cracks and chipping is suppressed when the sintered compact is processed into a sputtering target or the like.

Abstract: A surface-treated copper foil is capable of imparting the profile shape of the substrate surface after removal of the copper foil, the profile shape maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. A resin substrate is provided with a profile shape of the surface maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The surface-treated copper foil has a surface-treated layer formed on a copper foil, and the surface roughness Sz of the surface of the surface-treated layer is 2 to 6 ?m.

Abstract: A sintered compact magnesium oxide target for sputtering has a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm3 or higher, and a whiteness of 60% or less. To uniformly deposit a magnesium oxide film, a magnesium oxide target having a higher purity and a higher density is demanded. An object is to provide a target capable of realizing the above and a method for producing such a target. While a magnesium oxide sintered compact sputtering target is produced by hot-pressing a raw material powder, there is a problem in that color shading occurs in roughly ?60 (within a circle having a diameter of 60 mm) at the center part of the target. Conventionally, no particularly attention was given to this problem. However, in recent years, it has become necessary to investigate and resolve this problem in order to improve the deposition quality.

Abstract: This surface-treated copper foil is characterized in that the amount of adhesion of Si on the copper foil surface is from 3.1 to 300 ?g/dm2, and the amount of adhesion of N on the copper foil surface is from 2.5 to 690 ?g/dm2. The objective of the present invention is to obtain a copper foil having improved peel strength in providing a copper foil for a flexible printed substrate (FPC), in which a copper foil is laminated to a liquid crystal polymer (LCP) suitable for high-frequency applications.

Abstract: Provided is anhydrous nickel chloride having a total content of impurity elements other than gas components of less than 10 wt. ppm; each content of boron, sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, manganese, iron, copper, zinc, arsenic, silver, cadmium, indium, tin, thallium and lead of less than 1 wt. ppm, which can be produced by a method for producing anhydrous nickel chloride comprising the steps of carrying out ion exchange membrane electrolysis in an anolyte and a catholyte separated by an anion exchange membrane using raw metal nickel as an anode, a conductive material as a cathode and high purity hydrochloric acid as an electrolytic solution, to obtain a nickel chloride solution as the anolyte; concentrating the obtained nickel chloride solution by heating it at 80 to 100° C. under atmospheric pressure to obtain a concentrated nickel chloride solution; and dehydrating and drying the resulting concentrated nickel chloride solution by heating it at 180 to 220° C.

Abstract: Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5?Co/Si?5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.

Abstract: A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder.

Abstract: Provided is a tungsten sintered compact sputtering target, wherein the purity of the tungsten is 5N (99.999%) or more, and the content of impurity carbon in the tungsten is 5 wtppm or less. An object of the present invention is to decrease the specific resistance of a tungsten film sputter-deposited by using a tungsten sintered compact sputtering target by reducing a carbon content in the tungsten target.

Abstract: An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein an average length of cracks existing in the IGZO sintered compact is 3 ?m or more and 15 ?m or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.

Abstract: Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium.

Abstract: An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 m?·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided.

Abstract: The present invention provides a method for efficiently leaching copper from copper sulfide ore by separating and recovering iodine, and iron(III) ions to be used are regenerated by a heap of stacked ore in the method for leaching copper from copper sulfide using a sulfuric acid solution containing iodide ions and iron(III) ions as a leaching solution.