Abstract: (Technical problems to be solved) To provide a method for selecting mineral of molybdenum. (Means for solving the problems) Composition comprising M13 phage for separating a substance containing molybdenum.

Abstract: A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. An object of this invention is to provide a high-quality titanium target for sputtering, in which impurities causing particles and abnormal discharge phenomena are reduced, and which is free from fractures and cracks even during high-rate sputtering, and capable of stabilizing the sputtering characteristics, effectively inhibiting the generation of particles during deposition, and improving the uniformity of deposition.

Abstract: A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components. Provided is a high purity tantalum sputtering target comprising a uniform and fine structure which is adjusted to be within an optimal range and which enables deposition of a uniform film at a high deposition rate in a stable manner.

Abstract: An object of the present invention is to recover a minor metal and/or rare-earth metal. The present invention provides a method for recovering a minor metal and/or rare-earth metal from a post-chlorination residue in titanium smelting. The minor metal and/or rare-earth metal is one or more metal selected from the group consisting of Sc, V, Nb, Zr, Y, La, Ce, Pr, and Nd.

Abstract: Provided is a method for efficiently producing tungsten from a raw material mixture comprising at least one valuable containing tungsten. The present invention relates to a method for producing tungsten, comprising the steps of subjecting a raw material mixture comprising at least one valuable containing tungsten to electrolysis using an organic electrolytic solution to dissolve tungsten in the electrolytic solution; and calcining the electrolytic solution containing dissolved tungsten at a temperature of less than 800° C. to obtain tungsten.

Abstract: A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. By controlling the crystal grain size of the target, or the crystal grain size and the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.

Abstract: Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.

Abstract: The present invention provides a method for removing copper from lithium ion battery scrap containing copper, comprising a leaching step of adding the lithium ion battery scrap to an acidic solution and leaching the lithium ion battery scrap under a condition that an aluminum solid is present in the acidic solution; and a copper separating step of separating copper contained in the acidic solution as a solid from the acidic solution, after the leaching step.

Abstract: A laminate structure having an indium target with the occurrence of defects being well controlled and excellent in adhesion between the indium target and a backing tube is provided. A laminate structure of an indium target and a backing tube wherein a defect area ratio at an indium-backing tube interface is 5.0% or less.

Abstract: The present invention is intended for effectively removing copper, iron, sulfur, which are impurities, from activated carbon on which gold is adsorbed before gold eluting in the point of view of gold recovery, and is related to a method for eluting gold from an activated carbon on which at least sulfur (S) and gold (Au) are adsorbed, whereas the activated carbon is washed with an alkali solution before eluting the gold, and then the gold is eluted from the activated carbon.

Abstract: To provide a surface-treated copper foil that is excellent in adhesiveness to an insulating substrate at ordinary temperature, and is capable of suppressing the formation of blister on application of a thermal load of reflow soldering to a copper-clad laminate board constituted by the copper foil. A surface-treated copper foil having a surface-treated surface, the surface-treated copper foil satisfying one or more of the following conditions (1) to (3): by an XPS measurement at a depth after sputtering from the surface-treated surface for 0.5 min at a rate of 1.1 nm/min (SiO2 conversion), (1) the N concentration is from 1.5 to 7.5 atomic %; (2) the C concentration is from 12 to 30 atomic %; and (3) the Si concentration is 3.1 atomic % or more and the O concentration is from 40 to 48 atomic %.

Abstract: Provided is a backing plate obtaining by bonding an anticorrosive metal and Mo or a Mo alloy, wherein the backing plate comprises, on a surface of the Mo or Mo alloy backing plate to be cooled (cooling surface side), a layer having a thickness corresponding to 1/40 to ? of a total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more types of metals selected from among Cu, Al and Ti, or an alloy thereof. Additionally provided is a sputtering target-backing plate assembly obtained by bonding the foregoing Mo or Mo alloy backing plate and a target formed from a low thermal expansion material. Particularly in semiconductor applications, reductions in size have progressed and control of particles during sputtering has become stricter. The present invention aims to resolve the problem of warpage of sputtering targets formed from low thermal expansion materials and problems occurring with respect to the anticorrosive properties of Mo or Mo alloy backing plates.

Abstract: A surface treatment metal powder having any of the following characteristics is provided as a metal powder that can be suitably used for metal AM and has excellent laser absorbing characteristics: the brightness L* of the surface is 0-50; the color difference ?Eab of the surface is 40 or more; the color difference ?L of the surface is ?35 or less; the color difference ?a of the surface is 20 or less; and the color difference ?b of the surface is 20 or less (when determined on the basis of the object color of a white plate (brightness L*=94.14, color coordinate a*=?0.90, color coordinate b*=0.24)).

Abstract: The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials.

Abstract: The present invention provides a Cu—Co—Ni—Si alloy for an electronic component having improved reliability in which in addition to high strength and high electrical conduction, bendability generally difficult to achieve with strength is also provided to a Corson copper alloy. The present invention is a Cu—Co—Ni—Si alloy for an electronic component comprising 0.5 to 3.0% by mass of Co and 0.1 to 1.0% by mass of Ni, a concentration (% by mass) ratio of Ni to Co (Ni/Co) being adjusted in the range of 0.1 to 1.0, the alloy comprising Si so that a (Co+Ni)/Si mass ratio is in the range of 3 to 5, and comprising a balance comprising Cu and unavoidable impurities, wherein a coefficient of variation of concentration ratios of Co to Ni (Co/Ni) measured for at least 100 second-phase particles is 20% or less.

Abstract: The present invention provides a Ni-plated copper or copper alloy material having both excellent hardness and excellent bendability. In the Ni-plated copper or copper alloy material having, an area ratio of a crystal having <001> plane orientation in a crystal plane parallel to a surface of a Ni plating, measured by an electron backscatter diffraction, is 15 to 35%.

Abstract: Provided herein is a carrier-attached copper foil having desirable fine circuit formability. The carrier-attached copper foil includes a carrier, an interlayer, and an ultrathin copper layer in this order. The maximum ridge height Sp as measured with a laser microscope according to ISO 25178 on the surface of the carrier-attached copper foil on the side of the ultrathin copper layer is 0.193 to 3.082 ?m.

Abstract: The present invention controls the fluctuations of Ti concentration in a copper titanium alloy from a perspective different from conventional perspectives to improve the strength and bending workability of the copper titanium alloy. A copper titanium alloy for electronic components comprising 2.0 to 4.0 mass % of Ti, and 0 to 0.5 mass %, in total, of one or more elements selected from the group consisting of Fe, Co, Mg, Si, Ni, Cr, Zr, Mo, V, Nb, Mn, B, and P as a third element, with the balance being copper and unavoidable impurities, wherein a coefficient of variation in a Ti concentration fluctuation curve is 0.2 to 0.

Abstract: The present invention is a sputtering target-backing plate assembly in which the sputtering target is made from Ta having a 02% proof stress of 150 to 200 MPa, and the backing plate is made from a Cu alloy having a 0.2% proof stress of 60 to 200 MPa. The present invention aims to increase the uniformity of the film thickness as well as increase the deposition rate and improve the productivity by reducing, as much as possible, the plastic deformation of the sputtering target caused by the repeated thermal expansion and contraction of the sputtering target-backing plate assembly as a bimetal.

Abstract: The present invention relates to a NbO2 sintered compact characterized in that the intensity proportion of the X-ray diffraction peak intensity of a (001) plane or (110) plane of Nb2O5 relative to the X-ray diffraction peak intensity of a (400) plane of NbO2 is 1% or less. The present invention provides, without using an expensive NbO2 material, a NbO2 sintered compact that can be applied to a sputtering target for forming a high-quality variable resistance layer for a ReRAM. In particular, it is an object of the present invention to provide a single phase NbO2 sintered compact having a high density suitable for stabilizing sputtering.