Abstract: Provided herein is a carrier-attached copper foil having desirable laser drillability through an ultrathin copper layer, preferred for fabrication of a high-density integrated circuit substrate. The carrier-attached copper foil includes an interlayer and an ultrathin copper layer that are provided in this order on one or both surfaces of a carrier. The surface roughness Sz and the surface roughness Sa on the interlayer side of the ultrathin copper layer satisfy Sz?3.6 ?m, and Sz/Sa?14.00 as measured with a laser microscope in case of detaching the carrier from the carrier-attached copper foil according to JIS C 6471 after the carrier-attached copper foil is laminated to an insulating substrate from the ultrathin copper layer side under a pressure of 20 kgf/cm2 and heated at 220° C. for 2 hours.

Abstract: A target is formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target are bonded. A production method of such a target is provided. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

Abstract: A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 ?m or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.

Abstract: A carrier-attached copper foil having good circuit formability is provided. The carrier-attached copper foil has a carrier, an intermediate layer and an ultra-thin copper layer in this order, the average grain size of crystal grains that form the ultra-thin copper layer is 1.05 to 6.5 ?m, and a ten point average roughness Rz of a surface on a side of the ultra-thin copper layer is 0.1 to 2.0 ?m.

Abstract: The present invention provides: an InP wafer optimized from the viewpoint of small edge roll-off (ERO) and sufficiently high flatness even in the vicinity of a wafer edge; and a method for effectively producing the InP wafer. The InP wafer having a roll-off value (ROA) of from ?1.0 ?m to 1.0 ?m is obtained by using a method including: performing a first stage polishing under a processing pressure of from 10 to 200 g/cm2 for a processing time of from 0.1 to 5 minutes, while supplying a polishing solution containing bromine to at least one side of an InP single crystal substrate that will form the InP wafer; and performing a second stage polishing under a processing pressure of from 200 to 500 g/cm2 for a processing time of from 0.5 to 10 minutes, provided that the processing pressure is higher than that of the first stage polishing by 50 g/cm2 or higher.

Abstract: A C-containing FePt-based sputtering target for forming a magnetic recording film, wherein a ratio of an X-ray diffraction peak intensity of a graphite (002) plane in a cross section perpendicular to a sputtering surface relative to an X-ray diffraction peak intensity of a graphite (002) plane in a plane horizontal to a sputtering surface is 2 or more. A magnetic recording layer is configured from a magnetic phase such as an Fe—Pt alloy and a nonmagnetic phase that separates the magnetic phase, and the sputtering target is a ferromagnetic material sputtering target in which carbon is used as a nonmagnetic phase material. When sputtered, the ferromagnetic material sputtering target is effective in preventing the generation of particles caused by an abnormal discharge originating from carbon, which is prone to aggregate.

Abstract: Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

Abstract: A ruthenium sputtering target, wherein a Si content is 10 to 100 wtppm, a total content of unavoidable impurities excluding gas components is 50 wtppm or less, and a remainder is Ru. By suppressing the crystal growth of ruthenium or a ruthenium alloy and reducing the generation of coarse crystal grains, arcing that occurs during sputtering is minimized, particle generation is reduced, and yield is improved.

Abstract: The punching processing method of the present invention is a punching processing method in which a metallic sheet material 1a is sequentially subjected to multiple punching processing steps by a punch and a die, comprising, in first step punching processing, forming a first step punched surface 2 on the sheet material 1a, and then in second step punching processing, forming a second step punched surface 3 on the sheet material 1a by punching the sheet material 1a such that the second step punched surface 3 and the first step punched surface 2 are crossed with each other, thereby forming matching portions 5 at positions where the first step punched surface 2 and the second step punched surface 3 intersect, wherein after the first step punching processing and before the second step punching process, the method further comprises subjecting the sheet material 1a to swaging processing that sandwiches and crushes matching portion forming portions 5a of the sheet material 1a, which will form the matching portions 5,

Abstract: An activated carbon regeneration method of the present invention is for eluting gold from activated carbon on which the gold has been adsorbed and thereafter recycling, in adsorption of the gold, the used activated carbon from which the gold has been eluted, the method including: washing the used activated carbon with an acidic washing liquid, alkaline washing liquid or neutral washing liquid; and when the used activated carbon is washed with the acidic washing liquid, keeping the acidic washing liquid after the washing in an acidic region, or when the used activated carbon is washed with the alkaline washing liquid or neutral washing liquid, keeping the alkaline washing liquid or neutral washing liquid after the washing in an alkaline region or neutral region.

Abstract: Provided herein is a carrier-attached copper foil having desirable fine circuit formability. The carrier-attached copper foil includes a carrier, an interlayer, and an ultrathin copper layer in this order. The maximum trough depth Sv as measured with a laser microscope according to ISO 25178 on a surface of a bismaleimide-triazine resin substrate exposed by detaching the carrier and etching and removing the ultrathin copper layer after the carrier-attached copper foil is heat pressed against the resin substrate from the ultrathin copper layer side under the pressure of 20 kgf/cm2 at 220° C. for 2 hours is 0.181 to 2.922 ?m.

Abstract: Provided is a high-purity copper-chromium alloy sputtering target comprising 0.1 to 10 wt % of Cr and the remainder being Cu and inevitable impurities, wherein when the number of precipitated Cr grains in a 100 ?m square area is counted at different five areas randomly selected on the surface of the target, the difference between the largest and the smallest numbers of counted precipitated Cr grains is less than 40. The term “precipitated Cr grains” refers to the grains each having a Cr content of 70% or more and having a grain size of 1 to 20 ?m. Thus, a thin film having excellent uniformity can be formed by adding an appropriate amount of a Cr element to copper and reducing the in-plane Cr variation of the sputtering target. In particular, the invention provides a high-purity copper-chromium alloy sputtering target that is useful for improving the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.

Abstract: A copper alloy sputtering target having a composition comprising 1.0 to 5.0 at % of Mn, 0.1 to 4.0 at % of Al, and remainder being Cu and unavoidable impurities, wherein a compositional variation in a plane of the sputtering target is within 20%. The present invention provides a copper alloy sputtering target capable of forming a semiconductor element wiring material, particularly a stable and uniform seed layer which is free of aggregation during copper electroplating, and which has superior sputter deposition properties, and a semiconductor element wiring formed using the copper alloy sputtering target.

Abstract: Provided is an electromagnetic shielding material having improved electromagnetic shielding properties. The present invention relates to an electromagnetic shielding material having a structure in which at least two metal foils are laminated via at least one insulating layer, the electromagnetic shielding material comprising at least one metal oxide layer on at least one boundary surface over which each metal foil is in contact with the insulating layer, the metal oxide layer having a thickness of from 1 to 30 nm.

Abstract: The present invention is intended to provide a rolled copper foil for a secondary battery negative electrode current collector which can satisfactorily suppress rupture of the copper foil caused by stress generation or the like due to volume change of an active material. A rolled copper foil for a secondary battery negative electrode current collector, wherein a tensile strength in a direction parallel to the rolling direction is 600 MPa or more, and a breaking elongation in the direction parallel to the rolling direction is 2.0% or more; and wherein a tensile strength in a direction orthogonal to the rolling direction is 640 MPa or more, and a breaking elongation in the direction orthogonal to the rolling direction is 3.5% or more.

Abstract: Provided are: copper chloride which can provide an organometallic complex that contains impurities at a small content and therefore has high purity; a CVD raw material; a copper wiring film; and a method for producing copper chloride. Copper chloride which has purity of 6 N or more and has an Ag content of 0.5 wtppm or less.

Abstract: Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of niobium as an essential component, and having a purity of 99.999% or more excluding niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which yields stable plasma and superior film evenness (uniformity).

Abstract: A sputtering target for a magnetic recording medium, wherein an average grain area of a B-rich phase is 90 ?m2 or less. A process for producing a sputtering target for a magnetic recording medium, wherein an alloy cast ingot is subject to heat treatment, thereafter subject to primary rolling which includes at least one pass of cold rolling, thereafter subject to secondary rolling, and machined to prepare a target. The obtained sputtering target for a magnetic recording medium has few cracks in the B-rich phase and has a high leakage flux density, and by using this target, it is possible to stabilize the discharge during sputtering, suppress arcing which occurs from cracks in the B-rich phase, and suppress the generation of particles.

Abstract: A method for processing lithium ion battery scrap includes a leaching step of leaching lithium ion battery scrap and subjecting the resulting leached solution to solid-liquid separation to obtain a first separated solution; an iron removal step of adding an oxidizing agent to the first separated solution and adjusting a pH of the first separated solution in a range of from 3.0 to 4.0, then performing solid-liquid separation and removing iron in the first separated solution to obtain a second separated solution; and an aluminum removal step of neutralizing the second separated solution to a pH range of from 4.0 to 6.0, then performing solid-liquid separation and removing aluminum in the second separated solution to obtain a third separated solution.

Abstract: The present invention provides a surface-treated copper foil capable of imparting the profile shape of the substrate surface after removal of the copper foil, the profile shape maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The present invention also provides a resin substrate provided with a profile shape of the surface maintaining fine wiring formability and achieving satisfactory adhesion of electroless copper plating coating. The surface-treated copper foil of the present invention is a surface-treated copper foil, wherein a surface-treated layer is formed on a copper foil, and the proportion of the area corresponding to the particles of the surface of the surface-treated layer is 0.1 to 0.85.