Patents Assigned to Kemet Electronics
  • Patent number: 8057883
    Abstract: Porous sintered bodies for capacitors formed from valve metals are treated by electrolysis to form a dielectric layer and coated with cathode layers. When standard parallelepiped shapes are used as they were passed, cathode coverage at the sharp corners and edges is non-uniform and failures occur at those locations. Treating pressed anode bodies with an abrasive process alters the sharpness of corners and edges, creating rounded transitions between primary surfaces and remove surface imperfections resultant from the pressing process both of which enhance cathode layer uniformity.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: November 15, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Jeffrey Poltorak, Christian Guerrero, Yongjian Qui, Lance Thornton
  • Publication number: 20110265299
    Abstract: The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.
    Type: Application
    Filed: July 21, 2010
    Publication date: November 3, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: Erik Reed, David Jacobs, Randolph S. Hahn
  • Publication number: 20110252613
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: June 22, 2011
    Publication date: October 20, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Publication number: 20110252614
    Abstract: A ceramic multilayer surface-mount capacitor with inherent crack mitigation void patterning to channel flex cracks into a safe zone, thereby negating any electrical failures.
    Type: Application
    Filed: June 29, 2011
    Publication date: October 20, 2011
    Applicant: Kemet Electronics Corporation
    Inventor: John D. Prymak
  • Patent number: 8036740
    Abstract: A method of reforming a wet-tantalum capacitor includes providing a medical device comprising a wet-tantalum capacitor. The capacitor has a rated voltage and including a hydrated anodic deposit. The method further includes charging the capacitor to a voltage that is less than approximately seventy-five percent of the rated voltage and at least partially discharging the capacitor after the charging step. The charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: October 11, 2011
    Assignees: Medtronic, Inc., Kemet Electronics Corporation
    Inventors: John D. Norton, Brian J. Melody, John Tony Kinard
  • Patent number: 7990683
    Abstract: A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
    Type: Grant
    Filed: May 7, 2008
    Date of Patent: August 2, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Yongjian Qiu, Randy S. Hahn, Keith R. Brenneman
  • Patent number: 7969711
    Abstract: A Zener diode—capacitor combination wherein a Zener diode is mounted in the capacitor body and connected in parallel with the capacitor after the capacitor has been voltage tested. A welded strap or jumper wire completing the diode circuit or a connection of separate terminations during soldering may be used to complete the circuit.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: June 28, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: John D. Prymak, Eric Jayson Young
  • Patent number: 7958627
    Abstract: A method of forming an electrical component is provided. The method comprises preparing a subassembly by electrically connecting an integrated circuit to a flexible circuit; and attaching the subassembly to a multilayer ceramic capacitor having a mounting surface with a curvature deviation exceeding 0.008 inches per inch.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: June 14, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Michael S. Randall, Chris Wayne, John McConnell
  • Patent number: 7929274
    Abstract: The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: April 19, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Erik Reed, David Jacobs, Randolph S. Hahn
  • Patent number: 7923395
    Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combination thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?0.0533, 0.0001?s?0.08 and x?0.667s.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: April 12, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Michael S. Randall, Corey Antoniades, Daniel E. Barber, Xilin Xu, James Beeson, Pascal Pinceloup, Abhijit Gurav, Thomas Poole, Azizuddin Tajuddin, Ian Burn
  • Patent number: 7916451
    Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.
    Type: Grant
    Filed: June 11, 2009
    Date of Patent: March 29, 2011
    Assignee: Kemet Electronics Corporation
    Inventors: Michael S. Randall, Corey Antoniades, Daniel E. Barber, Xilin Xu, James Beeson, Pascal Pinceloup, Abhijit Gurav, Thomas Poole, Azizuddin Tajuddin, Ian Burn
  • Patent number: 7917217
    Abstract: A method of reforming a wet-tantalum capacitor is disclosed. The method comprises charging the capacitor to a voltage that is substantially less than one of a maximum and rated voltage for the capacitor. The method also comprises providing an open circuit condition and allowing the capacitor to at least partially discharge through leakage current.
    Type: Grant
    Filed: May 7, 2003
    Date of Patent: March 29, 2011
    Assignees: Medtronic, Inc., Kemet Electronics Corporation
    Inventors: John D. Norton, Brian J. Melody, John Tony Kinard
  • Publication number: 20110002082
    Abstract: New designs for multilayer ceramic capacitors are described with high voltage capability without the need of coating the part to resist surface arc-over. One design combines a high overlap area for higher capacitance whilst retaining a high voltage capability. A variation of this design has increased voltage capability over this design as well as another described in the prior art although overlap area and subsequently capacitance is lowered in this case. These designs are compared to the prior art in examples below.
    Type: Application
    Filed: July 1, 2010
    Publication date: January 6, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: John Bultitude, James R. Magee, Lonnie G. Jones
  • Patent number: 7833292
    Abstract: An improved method for forming a capacitor. The method includes providing a carrier with a channel therein, providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil, securing the metal foil into the channel with the first dielectric away from a channel floor, inserting an insulative material between the metal foil and each side wall of the channel, forming a cathode layer on the first dielectric between the insulative material, forming a conductive layer on the cathode layer and in electrical contact with the carrier, lap cutting the carrier parallel to the metal foil such that the valve metal is exposed, and dice cutting to form singulated capacitors.
    Type: Grant
    Filed: April 7, 2008
    Date of Patent: November 16, 2010
    Assignee: KEMET Electronics Corporation
    Inventors: Keith R. Brenneman, Chris Wayne, Chris Stolarski, John T Kinard, Alethia Melody, Gregory J. Dunn, Remy J. Chelini, Robert T. Croswell
  • Patent number: 7833293
    Abstract: A Zener diode-capacitor combination wherein a Zener diode is mounted in the capacitor body and connected in parallel with the capacitor after the capacitor has been voltage tested. A welded strap or jumper wire completing the diode circuit or a connection of separate terminations during soldering may be used to complete the circuit.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: November 16, 2010
    Assignee: KEMET Electronics Corporation
    Inventors: John D. Prymak, Eric Jayson Young
  • Patent number: 7780835
    Abstract: A capacitor comprising an aluminum anode and a dielectric layer comprising phosphate doped aluminum oxide and process for making the capacitor. The capacitor has a CV Product of at least 9 ?F?V/cm2 at 250 volts. Furthermore, the capacitor is formed by the process of: forming an aluminum plate; contacting the plate with an anodizing solution comprising glycerine, 0.1 to 1.0%, by weight, water and 0.01 to 0.5%, by weight, orthophosphate; applying a voltage to the aluminum plate and determining an initial current; maintaining the first voltage until a first measured current is no more than 50% of the initial current; increasing the voltage and redetermining the initial current; maintaining the increased voltage until a second measured current is no more than 50% of the redetermined initial current, and continuing the increasing of the voltage and maintaining the increased voltage until a final voltage is achieved.
    Type: Grant
    Filed: April 22, 2009
    Date of Patent: August 24, 2010
    Assignee: Kemet Electronics Corporation
    Inventors: John Tony Kinard, Brian John Melody, David Alexander Wheeler, Duane Earl Stenzinger, Albert Kennedy Harrington
  • Patent number: 7754276
    Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: July 13, 2010
    Assignee: KEMET Electronics Corporation
    Inventors: Yongjian Qiu, Qingping Chen, Philip M. Lessner, Randy S. Hahn, Cynthia L. Prince, Keith R. Brenneman
  • Patent number: 7745281
    Abstract: An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: June 29, 2010
    Assignees: Kemet Electronics Corporation, Motorola, Inc.
    Inventors: John D. Prymak, Chris Stolarski, David Jacobs, Chris Wayne, Philip Lessner, John T. Kinard, Alethia Melody, Gregory Dunn, Robert T. Croswell, Remy J. Chelini
  • Patent number: 7731893
    Abstract: A method for manufacturing valve metal anodes of electrolytic capacitors by deoxidizing the anodes using Mg vapor in a deoxidizing furnace, removing the anodes from deoxidizing furnace, placing them in sintering furnace, sintering at temperature lower than the temperature conventionally used for sintering in vacuum, and leaching of Mg oxide off the anode surface. The process limits free oxygen and improves morphology of valve metal anodes, which results in improved performance of electrolytic capacitors with these anodes. The process does not require any special equipment or maintenance operations and, thereby, is highly productive due to performing deoxidizing and sintering separately in traditional deoxidizing and sintering furnaces.
    Type: Grant
    Filed: November 13, 2007
    Date of Patent: June 8, 2010
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip Michael Lessner
  • Patent number: 7678259
    Abstract: An electrolyte solution for anodizing a metal and a capacitor comprising the anodized metal. The electrolyte comprises more than about 5%, by weight, and less than about 30%, by weight, water; about 0.1 to 20%, by weight, ionogen and an aprotic polar solvent. The ionogen comprises phosphoric acid and an alkanol amine in an amount, and ratio, sufficient to maintain a pH of about 4 to about 9.
    Type: Grant
    Filed: July 29, 2005
    Date of Patent: March 16, 2010
    Assignee: Kemet Electronics Corporation
    Inventors: Brian John Melody, John Tony Kinard, David Alexander Wheeler