Abstract: Porous sintered bodies for capacitors formed from valve metals are treated by electrolysis to form a dielectric layer and coated with cathode layers. When standard parallelepiped shapes are used as they were passed, cathode coverage at the sharp corners and edges is non-uniform and failures occur at those locations. Treating pressed anode bodies with an abrasive process alters the sharpness of corners and edges, creating rounded transitions between primary surfaces and remove surface imperfections resultant from the pressing process both of which enhance cathode layer uniformity.
Type:
Grant
Filed:
November 7, 2007
Date of Patent:
November 15, 2011
Assignee:
Kemet Electronics Corporation
Inventors:
Jeffrey Poltorak, Christian Guerrero, Yongjian Qui, Lance Thornton
Abstract: The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.
Type:
Application
Filed:
July 21, 2010
Publication date:
November 3, 2011
Applicant:
Kemet Electronics Corporation
Inventors:
Erik Reed, David Jacobs, Randolph S. Hahn
Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
Type:
Application
Filed:
June 22, 2011
Publication date:
October 20, 2011
Applicant:
Kemet Electronics Corporation
Inventors:
Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
Abstract: A ceramic multilayer surface-mount capacitor with inherent crack mitigation void patterning to channel flex cracks into a safe zone, thereby negating any electrical failures.
Abstract: A method of reforming a wet-tantalum capacitor includes providing a medical device comprising a wet-tantalum capacitor. The capacitor has a rated voltage and including a hydrated anodic deposit. The method further includes charging the capacitor to a voltage that is less than approximately seventy-five percent of the rated voltage and at least partially discharging the capacitor after the charging step. The charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
Abstract: A method for forming a capacitor including forming an anode from a valve metal; forming an oxide on the anode to form an anodized anode; dipping the anodized anode into a slurry of conductive polymer; drying the intrinsically conductive polymer; and providing external terminations in electrical contact with the anode and the conductive polymer.
Type:
Grant
Filed:
May 7, 2008
Date of Patent:
August 2, 2011
Assignee:
Kemet Electronics Corporation
Inventors:
Yongjian Qiu, Randy S. Hahn, Keith R. Brenneman
Abstract: A Zener diode—capacitor combination wherein a Zener diode is mounted in the capacitor body and connected in parallel with the capacitor after the capacitor has been voltage tested. A welded strap or jumper wire completing the diode circuit or a connection of separate terminations during soldering may be used to complete the circuit.
Abstract: A method of forming an electrical component is provided. The method comprises preparing a subassembly by electrically connecting an integrated circuit to a flexible circuit; and attaching the subassembly to a multilayer ceramic capacitor having a mounting surface with a curvature deviation exceeding 0.008 inches per inch.
Type:
Grant
Filed:
September 23, 2008
Date of Patent:
June 14, 2011
Assignee:
Kemet Electronics Corporation
Inventors:
Michael S. Randall, Chris Wayne, John McConnell
Abstract: The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.
Type:
Grant
Filed:
April 3, 2008
Date of Patent:
April 19, 2011
Assignee:
Kemet Electronics Corporation
Inventors:
Erik Reed, David Jacobs, Randolph S. Hahn
Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combination thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?0.0533, 0.0001?s?0.08 and x?0.667s.
Type:
Grant
Filed:
October 22, 2007
Date of Patent:
April 12, 2011
Assignee:
Kemet Electronics Corporation
Inventors:
Michael S. Randall, Corey Antoniades, Daniel E. Barber, Xilin Xu, James Beeson, Pascal Pinceloup, Abhijit Gurav, Thomas Poole, Azizuddin Tajuddin, Ian Burn
Abstract: A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0?x?0.08, 0.0001?s?0.043 and x?1.86s; and b) 0?x?0.0533, 0.0001?s?0.08 and x?0.667s.
Type:
Grant
Filed:
June 11, 2009
Date of Patent:
March 29, 2011
Assignee:
Kemet Electronics Corporation
Inventors:
Michael S. Randall, Corey Antoniades, Daniel E. Barber, Xilin Xu, James Beeson, Pascal Pinceloup, Abhijit Gurav, Thomas Poole, Azizuddin Tajuddin, Ian Burn
Abstract: A method of reforming a wet-tantalum capacitor is disclosed. The method comprises charging the capacitor to a voltage that is substantially less than one of a maximum and rated voltage for the capacitor. The method also comprises providing an open circuit condition and allowing the capacitor to at least partially discharge through leakage current.
Abstract: New designs for multilayer ceramic capacitors are described with high voltage capability without the need of coating the part to resist surface arc-over. One design combines a high overlap area for higher capacitance whilst retaining a high voltage capability. A variation of this design has increased voltage capability over this design as well as another described in the prior art although overlap area and subsequently capacitance is lowered in this case. These designs are compared to the prior art in examples below.
Type:
Application
Filed:
July 1, 2010
Publication date:
January 6, 2011
Applicant:
Kemet Electronics Corporation
Inventors:
John Bultitude, James R. Magee, Lonnie G. Jones
Abstract: An improved method for forming a capacitor. The method includes providing a carrier with a channel therein, providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil, securing the metal foil into the channel with the first dielectric away from a channel floor, inserting an insulative material between the metal foil and each side wall of the channel, forming a cathode layer on the first dielectric between the insulative material, forming a conductive layer on the cathode layer and in electrical contact with the carrier, lap cutting the carrier parallel to the metal foil such that the valve metal is exposed, and dice cutting to form singulated capacitors.
Type:
Grant
Filed:
April 7, 2008
Date of Patent:
November 16, 2010
Assignee:
KEMET Electronics Corporation
Inventors:
Keith R. Brenneman, Chris Wayne, Chris Stolarski, John T Kinard, Alethia Melody, Gregory J. Dunn, Remy J. Chelini, Robert T. Croswell
Abstract: A Zener diode-capacitor combination wherein a Zener diode is mounted in the capacitor body and connected in parallel with the capacitor after the capacitor has been voltage tested. A welded strap or jumper wire completing the diode circuit or a connection of separate terminations during soldering may be used to complete the circuit.
Abstract: A capacitor comprising an aluminum anode and a dielectric layer comprising phosphate doped aluminum oxide and process for making the capacitor. The capacitor has a CV Product of at least 9 ?F?V/cm2 at 250 volts. Furthermore, the capacitor is formed by the process of: forming an aluminum plate; contacting the plate with an anodizing solution comprising glycerine, 0.1 to 1.0%, by weight, water and 0.01 to 0.5%, by weight, orthophosphate; applying a voltage to the aluminum plate and determining an initial current; maintaining the first voltage until a first measured current is no more than 50% of the initial current; increasing the voltage and redetermining the initial current; maintaining the increased voltage until a second measured current is no more than 50% of the redetermined initial current, and continuing the increasing of the voltage and maintaining the increased voltage until a final voltage is achieved.
Type:
Grant
Filed:
April 22, 2009
Date of Patent:
August 24, 2010
Assignee:
Kemet Electronics Corporation
Inventors:
John Tony Kinard, Brian John Melody, David Alexander Wheeler, Duane Earl Stenzinger, Albert Kennedy Harrington
Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.
Type:
Grant
Filed:
April 16, 2007
Date of Patent:
July 13, 2010
Assignee:
KEMET Electronics Corporation
Inventors:
Yongjian Qiu, Qingping Chen, Philip M. Lessner, Randy S. Hahn, Cynthia L. Prince, Keith R. Brenneman
Abstract: An improved method for forming a capacitor. The method includes the steps of: providing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate discrete regions of the dielectric; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil with the discrete region of the dielectric.
Type:
Grant
Filed:
February 14, 2008
Date of Patent:
June 29, 2010
Assignees:
Kemet Electronics Corporation, Motorola, Inc.
Inventors:
John D. Prymak, Chris Stolarski, David Jacobs, Chris Wayne, Philip Lessner, John T. Kinard, Alethia Melody, Gregory Dunn, Robert T. Croswell, Remy J. Chelini
Abstract: A method for manufacturing valve metal anodes of electrolytic capacitors by deoxidizing the anodes using Mg vapor in a deoxidizing furnace, removing the anodes from deoxidizing furnace, placing them in sintering furnace, sintering at temperature lower than the temperature conventionally used for sintering in vacuum, and leaching of Mg oxide off the anode surface. The process limits free oxygen and improves morphology of valve metal anodes, which results in improved performance of electrolytic capacitors with these anodes. The process does not require any special equipment or maintenance operations and, thereby, is highly productive due to performing deoxidizing and sintering separately in traditional deoxidizing and sintering furnaces.
Abstract: An electrolyte solution for anodizing a metal and a capacitor comprising the anodized metal. The electrolyte comprises more than about 5%, by weight, and less than about 30%, by weight, water; about 0.1 to 20%, by weight, ionogen and an aprotic polar solvent. The ionogen comprises phosphoric acid and an alkanol amine in an amount, and ratio, sufficient to maintain a pH of about 4 to about 9.
Type:
Grant
Filed:
July 29, 2005
Date of Patent:
March 16, 2010
Assignee:
Kemet Electronics Corporation
Inventors:
Brian John Melody, John Tony Kinard, David Alexander Wheeler