Patents Assigned to Kemet Electronics
  • Publication number: 20130146347
    Abstract: An improved passive electronic stacked component is described. The component has a stack of individual electronic capacitors and a first lead attached to a first side of the stack. A second lead is attached to a second side of the stack. A foot is attached to the first lead and extends inward towards the second lead. A stability pin is attached to one of the foot or the first lead.
    Type: Application
    Filed: December 13, 2011
    Publication date: June 13, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: John E. McConnell, Alan P. Webster, Lonnie G. Jones, Garry L. Renner, Jeffrey Bell
  • Patent number: 8441265
    Abstract: A method for screening electrolytic capacitors places a capacitor in series with a resistor, applying a test voltage and following the charge curve for the capacitor. A high voltage drop across the capacitor indicates high reliability and a low voltage drop is used to reject the piece. The leakage current is not adversely affected during the test.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: May 14, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Jonathan Paulsen, Erik Reed, Yuri Freeman
  • Patent number: 8410536
    Abstract: A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein the foil has a dielectric. A conductive layer is formed on the dielectric. The conductive foil is treated to electrically isolate a region of conductive foil containing the conductive layer from additional conductive foil. A cathodic conductive couple is made between the conductive layer and a cathode trace and an anodic conductive couple is made between the conductive foil and an anode trace.
    Type: Grant
    Filed: January 6, 2012
    Date of Patent: April 2, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: John D. Prymak, Chris Stolarski, Alethia Melody, Antony P. Chacko, Gregory J. Dunn
  • Patent number: 8379371
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: February 19, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey
  • Patent number: 8349030
    Abstract: A process for the manufacturing valve metal anodes is provided. The process includes: providing a valve metal powder; pressing the valve metal powder to form a pellet; first deoxidizing the pellet with a first reducing agent to form a first oxide of reducing agent on the pellet; removing the first oxide of reducing agent from the pellet to form a deoxidized pellet; sintering the deoxidized pellet to form a sintered pellet; second deoxidizing the sintered pellet with a second reducing agent to form a second oxide of reducing agent on the sintered pellet; and removing said second oxide of reducing agent.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: January 8, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner
  • Patent number: 8346355
    Abstract: A method of reforming a wet-tantalum capacitor includes providing a medical device comprising a wet-tantalum capacitor. The capacitor has a rated voltage and including a hydrated anodic deposit. The method further includes charging the capacitor to a voltage that is less than approximately seventy-five percent of the rated voltage and at least partially discharging the capacitor after the charging step. The charging step is performed at a sufficient voltage to dehydrate the anodic deposit while not significantly decreasing the service life of the capacitor.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: January 1, 2013
    Assignees: Medtronic, Inc., Kemet Electronics Corporation
    Inventors: John D. Norton, Brian J. Melody, John Tony Kinard
  • Patent number: 8339769
    Abstract: A method of making an electrolytic capacitor includes providing a first electrode that includes a metal substrate, a carbide layer, and a carbonaceous material. The metal substrate includes a metal selected from the group consisting of titanium, aluminum, tantalum, niobium, zirconium, silver, steel, and alloys and combinations thereof. The method further includes providing a second electrode and an electrolyte.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: December 25, 2012
    Assignees: Medtronic, Inc., Kemet Electronics Corporation
    Inventors: Joachim Hossick Schott, Brian Melody, John Tony Kinard
  • Patent number: 8331078
    Abstract: A multi-layered ceramic capacitor with at least one chip and with first base metal plates in a parallel spaced apart relationship and second base metal plates in a parallel spaced apart relationship wherein the first plates and second plates are interleaved. A dielectric is between the first base metal plates and said second base metal plates and the dielectric has a first coefficient of thermal expansion. A first termination is in electrical contact with the first plates and a second termination is in electrical contact with the second plates. Lead frames are attached to, and in electrical contact with, the terminations wherein the lead frames have a second coefficient of thermal expansion and the second coefficient of thermal expansion is higher than said first coefficient of thermal expansion. The lead frame is a non-ferrous material.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: December 11, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: John E. McConnell, Reggie Phillips, Alan P. Webster, John Bultitude, Mark R. Laps, Lonnie G. Jones, Garry Renner
  • Patent number: 8323361
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Patent number: 8325465
    Abstract: A capacitor is described with an NbO anode. The capacitor has an NbO anode and an NbO anode lead extending from the NbO anode. A dielectric is on the NbO anode and a conductor is on the dielectric.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Randolph S. Hahn
  • Publication number: 20120300370
    Abstract: A capacitor with an anode and a dielectric over the anode. A first conductive polymer layer is over the dielectric wherein the first conductive polymer layer comprises a polyanion and a first binder. A second conductive polymer layer is over the first conductive polymer layer wherein the second conductive polymer layer comprises a polyanion and a second binder and wherein the first binder is more hydrophilic than the second binder.
    Type: Application
    Filed: May 24, 2012
    Publication date: November 29, 2012
    Applicant: Kemet Electronics Corporation
    Inventor: Antony Chacko
  • Publication number: 20120293917
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Application
    Filed: May 20, 2011
    Publication date: November 22, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yurl Freeman, Steven C. Hussey
  • Patent number: 8310816
    Abstract: A capacitor with an anode, a dielectric on the anode and a cathode on the dielectric. A transition layer is on the cathode wherein the transition layer has a blocking layer. A plated layer is on the transition layer. The cathode is electrically connected to a cathode termination through the transition layer.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventor: Antony P. Chacko
  • Patent number: 8310815
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Patent number: 8308825
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey
  • Patent number: 8268019
    Abstract: A powder compaction press having opposed rib and channel punches which are interleaved and a production method are used to produce capacitor elements having a uniform compaction density and which are free of surface imperfections.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: September 18, 2012
    Assignee: Kemet Electronics Corporation
    Inventor: Jeffrey P. Poltorak
  • Patent number: 8264816
    Abstract: A capacitor with a combined with a resistor and/or fuse is described. This safe capacitor can rapidly discharge through the resistor when shorted. The presence of a fuse in series with the capacitor and results in a resistive failure when this opens during and overcurrent condition. Furthermore, the presence of a resistor in parallel to the capacitor allows the energy to be rapidly dissipated when a failure occurs.
    Type: Grant
    Filed: August 24, 2009
    Date of Patent: September 11, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: John Bultitude, John E. McConnell
  • Patent number: 8262745
    Abstract: The capacitor has a monolithic anode and at least one anode lead wire extending from the anode. At least one sacrificial lead wire extends from the anode. A dielectric layer is on said anode and a cathode layer is on the dielectric layer. The anode lead wire is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.
    Type: Grant
    Filed: July 21, 2010
    Date of Patent: September 11, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Erik Reed, David Jacobs, Randolph S. Hahn
  • Publication number: 20120106032
    Abstract: A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein the foil has a dielectric. A conductive layer is formed on the dielectric. The conductive foil is treated to electrically isolate a region of conductive foil containing the conductive layer from additional conductive foil. A cathodic conductive couple is made between the conductive layer and a cathode trace and an anodic conductive couple is made between the conductive foil and an anode trace.
    Type: Application
    Filed: January 6, 2012
    Publication date: May 3, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: John D. Prymak, Chris Stolarski, Alethia Melody, Anthony P. Chacko, Gregory J. Dunn
  • Publication number: 20120081870
    Abstract: A capacitive interposer, electronic package having the capacitive interposer and electronic device with the electronic package is described. The interposer has a first planar face and a second planar face. An array of upper connections is on the first planar face and opposing lower connections are on the second planar face with conduction paths between each upper connection of the upper connections and a lower connection of the lower connections. At least one power feed-through capacitor is provided. The capacitor is mounted on the first planar face with the first external termination in direct electrical contact with a first upper connection and the second external termination is in direct electrical contact with a second upper connection. At least one upper connection, first external termination and second external termination are arranged for direct electrical contact with element contact pads of a common element.
    Type: Application
    Filed: November 9, 2011
    Publication date: April 5, 2012
    Applicant: Kemet Electronics Corporation
    Inventors: Michael S. Randall, Garry Renner, John D. Prymak, Azizuddin Tajuddin