Patents Assigned to Kemet Electronics
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Patent number: 11393635Abstract: Provided is an improved overvoltage protection element. The overvoltage protection devices comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.Type: GrantFiled: November 19, 2018Date of Patent: July 19, 2022Assignee: KEMET Electronics CorporationInventors: Iain D. Kinnon, John Bultitude, Lonnie G. Jones
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Patent number: 11393636Abstract: Provided is an improved overvoltage protection element. The overvoltage protection devices comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.Type: GrantFiled: March 20, 2020Date of Patent: July 19, 2022Assignee: KEMET Electronics CorporationInventors: Iain D. Kinnon, John Bultitude, Lonnie G. Jones
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Patent number: 11393637Abstract: Provided is an improved capacitor and a method of making an improved capacitor. The capacitor comprises a hermetically sealed casing with a capacitive element in the hermetically sealed casing. The capacitive element comprises a cathode with an ionic liquid in the cathode.Type: GrantFiled: June 3, 2019Date of Patent: July 19, 2022Assignee: KEMET Electronics CorporationInventors: Antony P. Chacko, Elisabeth Crittendon Key, Philip M. Lessner
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Patent number: 11361908Abstract: An improved method of forming a capacitor, and capacitor formed thereby, is described. The method comprises forming an anode with an anode lead extending therefrom, forming a dielectric on the anode, forming a solid cathode layer on the dielectric and forming a hermetic encasement on the capacitor wherein the hermetic encasement comprises a conformal non-conductive layer.Type: GrantFiled: November 5, 2020Date of Patent: June 14, 2022Assignee: KEMET Electronics CorporationInventors: Antony Chacko, Randolph S. Hahn, David Jacobs, Brandon Summey
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Patent number: 11227719Abstract: A stacked MLCC capacitor is provided wherein the capacitor stack comprises multilayered ceramic capacitors wherein each multilayered ceramic capacitor comprises first electrodes and second electrodes in an alternating stack with a dielectric between each first electrode and each adjacent second electrode. The first electrodes terminate at a first side and the second electrodes second side. A first transient liquid phase sintering conductive layer is the first side and in electrical contact with each first electrode; and a second transient liquid phase sintering conductive layer is on the second side and in electrical contact with each second electrode.Type: GrantFiled: March 1, 2018Date of Patent: January 18, 2022Assignee: KEMET Electronics CorporationInventors: John E. McConnell, Garry L Renner, John Bultitude, Allen Hill
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Patent number: 11178800Abstract: Provided is an improved overvoltage protection element. The overvoltage protection device comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.Type: GrantFiled: July 19, 2019Date of Patent: November 16, 2021Assignee: KEMET Electronics CorporationInventors: Lonnie G. Jones, Iain D. Kinnon, John Bultitude, Nathan A. Reed, Jeffrey W. Bell, George Michael Theis
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Patent number: 11177076Abstract: A capacitor comprising an anode foil; and a conductive polymer layer on the anode foil. The conductive polymer layer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and the polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns. The second particles have an average particle diameter of at least 1 nm to no more than 600 nm.Type: GrantFiled: September 17, 2020Date of Patent: November 16, 2021Assignee: KEMET Electronics CorporationInventors: Ajaykumar Bunha, Antony P. Chacko, Qingping Chen, Yaru Shi, Philip M. Lessner
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Patent number: 11152161Abstract: An improved capacitor is provided. The capacitor comprises a working element wherein the working element comprises an anode comprising a first dielectric on the anode, a cathode and a conductive separator between the first dielectric and cathode. The conductive separator comprises a separator and a first conductive polymer wherein the first conductive polymer at least partially encapsulates the separator. A second conductive polymer at least partially encapsulates the first conductive polymer and wherein the first conductive polymer has a higher conductivity than the second conductive polymer. An anode lead is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.Type: GrantFiled: September 3, 2019Date of Patent: October 19, 2021Assignee: KEMET Electronics CorporationInventors: Victor Andoralov, Miguel Evaristo, Rui A. Monteiro, Philip M. Lessner
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Patent number: 11120949Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: GrantFiled: December 13, 2018Date of Patent: September 14, 2021Assignee: KEMET Electronics CorporationInventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
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Patent number: 11101077Abstract: A dispersion comprising first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.Type: GrantFiled: July 28, 2020Date of Patent: August 24, 2021Assignee: KEMET Electronics CorporationInventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
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Patent number: 11081290Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 ?FV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.Type: GrantFiled: January 13, 2020Date of Patent: August 3, 2021Assignee: KEMET Electronics CorporationInventors: Yaru Shi, Antony P. Chacko, Ajaykumar Bunha, Qingping Chen, Elisabeth Crittendon Key
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Patent number: 11081882Abstract: A protected electric circuit, and method of protecting a protected circuit is provided. The circuit comprises at least one sensitive device wherein the sensitive device operates at a device voltage and has a maximum voltage capability. At least one light emitting diode electrically connected with the sensitive device wherein the light emitting diode has a first trigger voltage wherein the first trigger voltage is above the device voltage and below the maximum voltage capability. When any said extraneous energy above the first trigger energy is experienced the light emitting diode emits photons thereby converting at least some of the extraneous energy to photon energy.Type: GrantFiled: July 16, 2019Date of Patent: August 3, 2021Assignee: KEMET Electronics CorporationInventors: John Bultitude, Lonnie G. Jones, Iain D. Kinnon, Nathan A. Reed, Jeffrey W. Bell
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Publication number: 20210193400Abstract: An improved capacitor is provided. The capacitor comprises a working element wherein the working element comprises an anode comprising a first dielectric on the anode, a cathode and a conductive separator between the first dielectric and cathode. The conductive separator comprises a separator and a first conductive polymer wherein the first conductive polymer at least partially encapsulates the separator. A second conductive polymer at least partially encapsulates the first conductive polymer and wherein the first conductive polymer has a higher conductivity than the second conductive polymer. An anode lead is in electrical contact with the anode and a cathode lead is in electrical contact with the cathode.Type: ApplicationFiled: March 10, 2021Publication date: June 24, 2021Applicant: KEMET Electronics CorporationInventors: Victor Andoralov, Miguel Evaristo, Rui A. Monteiro, Philip M. Lessner
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Patent number: 11043334Abstract: An improved capacitor is provided. The capacitor comprises an anode comprising a pressed and sintered, preferably tantalum, powder wherein the anode has edge surfaces and parallel major surfaces. The anode further comprises a first set of parallel surface protrusions and a second set of parallel surface protrusions on each parallel major surface wherein the first set of parallel surface protrusions and second set of parallel surface protrusions are not parallel and form a well therebetween. An anode wire extends from an edge surface of the edge surfaces. A dielectric is on the anode and a conductive polymer on said dielectric.Type: GrantFiled: February 7, 2020Date of Patent: June 22, 2021Assignee: KEMET Electronics CorporationInventors: Antony P. Chacko, Christian L. Guerrero, John Joseph Ols
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Patent number: 11037871Abstract: An improved electronic assembly is provided. The electronic assembly comprises a ceramic interposer comprising multiple layers. The active layers of the multiple layers form an embedded capacitor comprising parallel electrodes with a dielectric between adjacent electrodes wherein adjacent electrodes have opposite polarity. A wide band gap device is also on the multilayered ceramic interposer.Type: GrantFiled: August 28, 2019Date of Patent: June 15, 2021Assignee: KEMET Electronics CorporationInventors: Allen Templeton, John Bultitude, Lonnie G. Jones, Philip M. Lessner
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Patent number: 10984955Abstract: An electronic device is described wherein the electronic device comprises a substrate with a first conductive metal layer and a second conductive metal layer. A first microphonic noise reduction structure is in electrical contact with the first conductive metal layer wherein the first microphonic noise reduction layer comprises at least one of the group consisting of a compliant non-metallic layer and a shock absorbing conductor comprising offset mounting tabs with a space there between coupled with at least one stress relieving portion. An electronic component comprising a first external termination of a first polarity and a second external termination of a second polarity is integral to the electronic device and the first microphonic noise reduction structure and the first external termination are adhesively bonded by a transient liquid phase sintering adhesive.Type: GrantFiled: June 12, 2019Date of Patent: April 20, 2021Assignee: KEMET Electronics CorporationInventors: John Bultitude, John E. McConnell, Galen W. Miller
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Patent number: 10950688Abstract: Provided herein is a module for packaging semiconductors comprising: at least one PDC comprising parallel internal electrodes of alternating polarity with a paraelectric dielectric between adjacent internal electrodes wherein the paraelectric dielectric has a permittivity above 10 to no more than 300; and wherein the PDC forms a capacitor couple with at least one semiconductor.Type: GrantFiled: August 5, 2019Date of Patent: March 16, 2021Assignee: KEMET Electronics CorporationInventors: John Bultitude, Lonnie G. Jones, Allen Templeton, Philip M. Lessner
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Patent number: 10947376Abstract: A capacitor and a method of making a capacitor, is provided with improved reliability performance. The capacitor comprises an anode; a dielectric on the anode; and a cathode on the dielectric wherein the cathode comprises a conductive polymer and a polyanion wherein the polyanion is a copolymer comprising groups A, B and C represented by Formula AxByCz as described herein.Type: GrantFiled: May 14, 2019Date of Patent: March 16, 2021Assignee: KEMET Electronics CorporationInventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
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Patent number: 10943742Abstract: A capacitor, and process for forming a capacitor, is described wherein the capacitor comprises a conductive polymer layer. The conductive polymer comprises first particles comprising conductive polymer and polyanion and second particles comprising the conductive polymer and said polyanion wherein the first particles have an average particle diameter of at least 1 micron to no more than 10 microns and the second particles have an average particle diameter of at least 1 nm to no more than 600 nm.Type: GrantFiled: June 10, 2019Date of Patent: March 9, 2021Assignee: KEMET Electronics CorporationInventors: Ajaykumar Bunha, Antony P. Chacko, Yaru Shi, Qingping Chen, Philip M. Lessner
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Patent number: 10879010Abstract: Provided is an improved capacitor formed by a process comprising: providing an anode comprising a dielectric thereon wherein the anode comprises a sintered powder wherein the powder has a powder charge of at least 45,000 ?FV/g; and forming a first conductive polymer layer encasing at least a portion of the dielectric by applying a first slurry wherein the first slurry comprises a polyanion and a conductive polymer and wherein the polyanion and conductive polymer are in a weight ratio of greater than 3 wherein the conductive polymer and polyanion forms conductive particles with an average particle size of no more than 20 nm.Type: GrantFiled: July 26, 2018Date of Patent: December 29, 2020Assignee: KEMET Electronics CorporationInventors: Yaru Shi, Antony P. Chacko, Ajaykumar Bunha, Qingping Chen, Elisabeth Crittendon Key