Abstract: A wafer thickness measurement device of the present invention obtains, based on: first and second interferometer reference measurement results obtained by measuring, with an A-surface optical interferometer and a B-surface optical interferometer, a reference measurement point on a reference piece having the reference measurement point at which the reference piece has a known thickness; first and second distance meter reference measurement results obtained by measuring the reference measurement point with an A-surface distance meter and a B-surface distance meter; first and second interferometer measurement results obtained by measuring a measurement point of the wafer with the A-surface optical interferometer and the B-surface optical interferometer; and first and second distance meter measurement results obtained by measuring the measurement point with the A-surface distance meter and the B-surface distance meter, a number of phases between a reference displacement based on the first and second interferomete

Abstract: An optical system for a shape measuring device of the present invention includes a parallel light irradiation system and an imaging optical system, in which the parallel light irradiation system includes a point light source, a collimator lens, and a telecentric lens having a both side or object side telecentric structure to be irradiated with light from the collimator lens through an object to be measured, the imaging optical system includes an image sensor onto which an image of a portion of the object to be measured, the image by light passing through the telecentric lens is projected, and the point light source includes an LED, a diffusion member that diffuses and emits light from the LED; and a pinhole member having a pinhole into which light from the diffusion member is incident.

Abstract: The cathode member for electron beam generation of the present disclosure includes: 95% by area or more of a single phase or two phases of a compound composed of iridium and cerium. A total content of one or more subcomponents of metallic iridium and an oxide of one or more elements of iridium and cerium is 5% by area or less of the cathode member.

Abstract: An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]?40 atomic %, [In]?15 atomic %, [Sn]?4 atomic % are satisfied.

Abstract: An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]?37 atomic %, [Sn]?15 atomic %, and [Ga]/([In]+[Zn])?0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

Abstract: An oxide sintered body has metal elements of In, Ga, Zn, and Sn and contains Ga2In6Sn2O16, ZnGa2O4, and InGaZnO4. The contents of In, Ga, Zn, and Sn in the oxide sintered body satisfy the relations [Ga]?37 atomic %, [Sn]?15 atomic %, and [Ga]/([In]+[Zn])?0.7, where [In], [Ga], [Zn], and [Sn] represent ratios (atomic %) of In, Ga, Zn, and Sn with respect to all metal elements contained in the oxide sintered body, respectively.

Abstract: An oxide sintered body having metal elements composed of In, Ga, Zn and Sn and containing a hexagonal layered compound represented by InGaO3(ZnO)m (m is an integer of 1 to 6). When ratios (atomic %) of contents of In, Zn and Sn to all metal elements excluding oxygen contained in the oxide sintered body are taken as [In], [Zn] and [Sn], respectively, the relations [Zn]?40 atomic %, [In]?15 atomic %, [Sn]?4 atomic % are satisfied.

Abstract: Disclosed is an aluminum alloy sputtering target containing 0.01 atomic % to 0.04 atomic % in total of at least one element selected from the group consisting of Ni, Cr, Fe, Co and Cu, and 0.01 atomic % to 0.06 atomic % in total of at least one element selected from rare earth elements other than La, the balance being Al and inevitable impurities.

Abstract: A shape measuring apparatus of the present invention measures a variation in a thickness of an object to be measured WA based on an A surface reference interference light and an A surface measuring interference light obtained by performing optical heterodyne interference on a first A surface measuring light and a second A surface measuring light and a B surface reference interference light and a B surface measuring interference light obtained by performing the optical heterodyne interference on a first B surface measuring light and a second B surface measuring light. When the optical heterodyne interference is performed, the shape measuring apparatus makes the first A surface measuring light and the second B surface measuring light equal in frequency and makes the first B surface measuring light and the second A surface measuring light equal in frequency.

Abstract: An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 ?m or less. In the oxide sintered body, the relations 30 atomic %?[In]?50 atomic %, 20 atomic %?[Ga]?30 atomic % and 25 atomic %?[Sn]?45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]?0.05.

Abstract: A shape measuring apparatus of the present invention measures a variation in a thickness of an object to be measured WA based on an A surface reference interference light and an A surface measuring interference light obtained by performing optical heterodyne interference on a first A surface measuring light and a second A surface measuring light and a B surface reference interference light and a B surface measuring interference light obtained by performing the optical heterodyne interference on a first B surface measuring light and a second B surface measuring light. When the optical heterodyne interference is performed, the shape measuring apparatus makes the first A surface measuring light and the second B surface measuring light equal in frequency and makes the first B surface measuring light and the second A surface measuring light equal in frequency.

Abstract: A measurement unit measures a cross-sectional shape of an edge part of a semiconductor wafer. The measurement unit measures a cross-sectional shape of an edge part of a support member. The measurement unit measures a cross-sectional shape of an edge part of a laminated wafer. An analysis unit calculates a thickness of an adhesive agent by subtracting a thickness of the semiconductor wafer and a thickness of the support member from a thickness of the laminated wafer.

Abstract: Disclosed is an oxide sintered body, wherein contents of zinc, indium, gallium and tin relative to all metal elements satisfy the following inequality expressions: 40 atomic %?[Zn]?55 atomic %, 20 atomic %?[In]?40 atomic %, 5 atomic %?[Ga]?15 atomic %, and 5 atomic %?[Sn]?20 atomic %, where the contents (atomic %) of zinc, indium, gallium and tin relative to all metal elements excluding oxygen are respectively taken as [Zn], [In], [Ga] and [Sn], wherein the oxide sintered body has a relative density of 95% or more, and wherein the oxide sintered body includes, as a crystal phase, 5 to 20 volume % of InGaZn2 O5.

Abstract: A measurement unit measures a cross-sectional shape of an edge part of a semiconductor wafer. The measurement unit measures a cross-sectional shape of an edge part of a support member. The measurement unit measures a cross-sectional shape of an edge part of a laminated wafer. An analysis unit calculates a thickness of an adhesive agent by subtracting a thickness of the semiconductor wafer and a thickness of the support member from a thickness of the laminated wafer.

Abstract: To realize a sintered compact containing LiCoO2 which can increase a film deposition rate during sputtering, particularly even when a film is deposited only by pulsed DC discharge sputtering and can suppress the generation of flakes due to sputtering, and which is hardly cracked and is easy to handle. In the sintered compact containing LiCoO2, an average grain size is 10 to 40 ?m, a relative density is 90% or more, and a resistivity is 100 ?·cm or less.

Abstract: An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 ?m. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.

Abstract: An inspection apparatus 20 is for an inspection of a target region 13 including a part of a subsurface portion 12 of a sample 10 having an approximately circular cross section. The inspection apparatus 20 includes an X-ray source 40 that emits X-rays, a crystal plate 70 being a single crystal, and a detector 80. The crystal plate 70 is disposed to reflect and diffract X-rays (refractive X-rays X5) having been emitted by the X-ray source 40 and refracted in the target region 13. The crystal plate 70 is disposed to allow X-rays (rectilinear X-rays X3) having been emitted by the X-ray source 40 and entering the crystal plate 70 without having been incident on the sample 10 to transmit through the crystal plate 70. The detector 80 detects an intensity of the X-rays (reflected and diffracted X-rays X7) reflected and diffracted by the crystal plate 70.

Abstract: Provided is a sputtering target that can reduce the occurrence of flaws while having the same level of conductivity as a conventional aluminum sputtering target. The aluminum sputtering target contains 0.005 atomic % to 0.04 atomic % of Ni; and 0.005 atomic % to 0.06 atomic % of La, with the balance being Al and inevitable impurities.

Abstract: Provided is a sintered body comprising LiCoO2 used for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cm2 and the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0×102 ?-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.

Abstract: A shape measurement device and a shape measurement method according to the present invention measure, for first and second distance measurement units which are disposed so as to be opposed to each other with a measurement object to be measured interposed therebetween and each measure a distance to the measurement object, first and second displacements of the first and second distance measurement units in an opposition direction, and obtain, as a shape of the measurement object, a thickness of the measurement object in the opposition direction, the thickness being corrected with the measured first and second displacements, based on first and second distance measurement results measured by the first and second distance measurement units, respectively.