Abstract: Provided are a contact probe that can realize low adhesion property to an adherend (particularly, Sn contained in the adherend) and secure stable contact resistance over a long period of time, and a connection device including the same. The present invention relates to a contact probe which repeatedly contacts with an electrode, wherein a carbon film including a metal element is formed on a surface of the contact probe which contacts with the electrode, and a concentration of the metal element in the carbon film surface is lower than an average concentration thereof in a whole of the carbon film.

Abstract: The present invention provides a technique capable of suppressing generation of splash even at high-speed deposition by an Al-based alloy sputtering target containing Ni and a rare earth element, wherein when crystallographic orientations <001>, <011>, <111>, <012> and <112> in a normal direction of each sputtering surface at a surface part of the Al-based alloy sputtering target, a ¼×t (t: thickness of the Al-based alloy sputtering target) part thereof and a ½×t part thereof are observed by an electron backscatter diffraction pattern method, the Al-based alloy sputtering target satisfies the requirement (1) that, when a total of area fractions of the <001>±15°, <011>±15° and <112>±15° is defined as R (as for Rat each part, the R at the surface part is defined as Ra, the R at the ¼×t part is defined as Rb, and the R at the ½×t part is defined as Rc), R is 0.35 or more and 0.

Abstract: Disclosed is an austenitic welding material which contains C: 0.01 wt % or less, Si: 0.5 wt % or less, Mn: 0.5 wt % or less, P: 0.005 wt % or less, S: 0.005 wt % or less, Ni: 15 to 40 wt %, Cr: 20 to 30 wt %, N: 0.01 wt % or less, O: 0.01 wt % or less, and the balance of Fe and inevitable impurities, wherein the content of B contained as one of the inevitable impurities in the welding material is 3 wt ppm or less, and the total content of C, P, S, N and O in the welding material is 0.02 wt % or less.

Abstract: An apparatus and method are provided for measuring the end surface of a disk-shaped semiconductor wafer based on its projection image, without the influence of contaminants on the end surface. A rotation supporting mechanism supports a wafer between a first supporting position rotated by +?relative to a predetermined reference position and a second supporting position rotated by ??degrees at two or more supporting positions. An image sensor picks up a projection image of the wafer's end surface. An index value for the end surface is calculated for each of a plurality of obtained projection images. One representative value of the calculated index values or an aggregate value is obtained, and a shape measurement of the wafer's end surface corresponding to the reference supporting position is derived. When the wafer's radius and a chamfer width are set as r and k, ??cos?1 ((r-k)/r) is satisfied.

Abstract: In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.

Abstract: A shape measuring device including a light projecting device for projecting a light flux to a measurement portion, and image pickup device for picking up a projection image of the measurement portion. The light projecting device includes a collimator lens having outgoing light of a point light source pass and collimating the same in a light projection direction and one or more apertures shielding passage of light in a range outside an image pickup range or passage of light in a range inside the image pickup range and outside a boundary located in a range outside a projection image of a measurement portion. Moreover, a parallel supporting portion for supporting a face of the measurement target in parallel with the light projection direction at a position on the center side with respect to the measurement portion in the measurement target supported by a center sucking and supporting mechanism is provided.

Abstract: Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 ?m or less.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 ?m to 3 ?m with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 ?m to 2 ?m with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si.

Abstract: The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 ?m or more and a maximum height (Rz) of 20 ?m or more at a sputtering surface thereof.

Abstract: An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax?Dave)/Dave×100(%) B1=(Dave<Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.

Abstract: Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu—Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 ?m or less, and has a porosity of 0.1% or less.

Abstract: Disclosed is an austenitic welding material which contains C: 0.01 wt % or less, Si: 0.5 wt % or less, Mn: 0.5 wt % or less, P: 0.005 wt % or less, S: 0.005 wt % or less, Ni: 15 to 40 wt %, Cr: 20 to 30 wt %, N: 0.01 wt % or less, 0: 0.01 wt % or less, and the balance of Fe and inevitable impurities, wherein the content of B contained as one of the inevitable impurities in the welding material is 3 wt ppm or less, and the total content of C, P, S, N and O in the welding material is 0.02 wt % or less.

Abstract: Provided is an electric contact member which reduces, to the utmost, peel-off of a carbon film that is caused at the time of use of the electric contact member having at least an edge to keep stable electric contact over a long period of time. Disclosed is an electric contact member which repeatedly contacts with a device under test at a tip part of the electric contact member in which the tip part has an edge, the electric contact member comprising: a base material; an underlying layer comprising Au, Au alloy, Pd or Pd alloy, which is formed on a surface of the base material of the tip part; an intermediate layer which is formed on a surface of the underlying layer; and a carbon film comprising at least one of a metal and a carbide thereof which is formed on a surface of the intermediate layer, wherein the intermediate layer has a lamination structure comprising: an inner layer comprising Ni or Ni alloy; and an outer layer comprising at least one of Cr, Cr alloy, W and W alloy.

Abstract: The present invention provides a contact probe pin having both electrical conductivity and durability and being capable of realizing low adhesion to the device under test (particularly, tin contained therein) and thereby stably maintaining electrical contact over a long period of time. The present invention relates to a contact probe pin comprising: a base material; and a carbon film comprising at least one of a metal and a carbide thereof, wherein the carbon film is continuously formed over the surface of from a tip part of the contact probe pin to a lateral part of the contact probe pin, and a content of the at least one of a metal and a carbide thereof in the carbon film is continuously or intermittently decreased from the tip part toward the lateral part.

Abstract: An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 ?m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Abstract: The present invention provides a contact probe pin having both electrical conductivity and durability and being capable of realizing low adhesion to the device under test (particularly, tin contained therein) and thereby stably maintaining electrical contact over a long period of time. The present invention relates to a contact probe pin comprising: a base material; and a carbon film comprising at least one of a metal and a carbide thereof, wherein the carbon film is continuously formed over the surface of from a tip part of the contact probe pin to a lateral part of the contact probe pin, and a content of the at least one of a metal and a carbide thereof in the carbon film is continuously or intermittently decreased from the tip part toward the lateral part.

Abstract: An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.

Abstract: A sputtering target prepared by the butt joining of metal sheets being made of the same material, wherein an intermetallic compound in a joined portion has an average particle diameter of 60% to 130% of the average particle diameter of the intermetallic compound in a non-joined portion is provided. In the sputtering target, the average particle diameter of an intermetallic compound in a joined portion is approximately the same as that of the intermetallic compound in a non-joined portion.

Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.