Abstract: Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.

Abstract: A shape measurement device and a shape measurement method according to the present invention measure, for first and second distance measurement units which are disposed so as to be opposed to each other with a measurement object to be measured interposed therebetween and each measure a distance to the measurement object, first and second displacements of the first and second distance measurement units in an opposition direction, and obtain, as a shape of the measurement object, a thickness of the measurement object in the opposition direction, the thickness being corrected with the measured first and second displacements, based on first and second distance measurement results measured by the first and second distance measurement units, respectively.

Abstract: The present invention provides a contact probe pin in which a carbon film having both of conductivity and durability is formed on a base material with a tip divided, wherein Sn adherence can be reduced as much as possible to be able to maintain stable electrical contact over a long period of time, even under such circumstances that the temperature of a usage environment becomes high. The present invention relates to a contact probe pin, including a tip divided into 2 or more projections and repeatedly coming into contact with a test surface at the projection, wherein a carbon film containing a metal element is formed at least on a surface of the projection, and a radius of curvature at an apex part of the projection is 30 ?m or more.

Abstract: Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of <011>±15° to the P value: 40% or lower; and (2) the total area ratio PB of <001>±15° and <111>±15° to the P value: 20% or higher.

Abstract: Provided is a resin-coated saw wire that, when used to cut a workpiece, has a shallow depth of a damaged layer and can give a cut article having a smooth surface. The resin-coated saw wire is used in cutting of the workpiece using a sawing machine and includes a steel wire and a resin coating covering the steel wire surface. The resin coating contains substantially no abrasive grain, has a hardness at 120° C. of 0.07 GPa or more, and has a hardness controlled so as to prevent abrasive grains from coming into the resin coating, which abrasive grains are sprayed during workpiece cutting.

Abstract: A method for cutting a workpiece except silicon includes moving a resin-coated saw wire having a resin coating that covers the surface of a steel wire. In the method, at least one of the resin-coated saw wire or the workpiece is swung, a diamond abrasive grain having an average grain size of more than 0 ?m and 8 ?m or less is sprayed onto the resin-coated saw wire, and a wire running speed of the resin-coated saw wire is 800 m/min or higher.

Abstract: An electrode for use in an input device is formed on a transparent substrate. The electrode has a laminated structure including a first layer, a second layer and a third layer on one surface of the transparent substrate, in this order from the farthest side from the surface. The first layer includes a transparent conductive film. The second layer includes one or more members of a nitride of Mo and a nitride of an Mo alloy. The third layer includes a metal film having a reflectance of 40% or higher and a transmittance of 10% or less.

Abstract: A rotational misalignment between semiconductor wafers constituting a bonded wafer is calculated. A light source is arranged at a position which is on a front side of an opening of a notch and which is separated from an outer edge portion of a bonded wafer by a predetermined interval, and outputs light to irradiate the outer edge portion of the bonded wafer including the notch. A camera receives and photoelectrically converts reflected light that is specularly-reflected by the outer edge portion of the bonded wafer including the notch among the light outputted by the light source in order to output a brightness distribution of the reflected light as an image. A computer analyzes positions of notches from the image outputted by the camera to obtain a notch position misalignment, and further calculates a rotational misalignment between semiconductor wafers using a center position misalignment between the semiconductor wafers.

Abstract: The present invention provides a Cu—In—Ga—Se powder containing Cu, In, Ga and Se in which cracks do not occur during sintering or processing, and a sintered body and sputtering target, each using the same. The present invention relates to a powder containing Cu, In Ga and Se, which contains a Cu—In—Ga—Se compound and/or a Cu—In—Se compound in an amount of 60 mass % or more in total. The powder of the present invention preferably contains an In—Se compound in an amount of 20 mass % or less and/or a Cu—In compound in an amount of 20 mass % or less.

Abstract: An oxide sintered body is obtained by sintering indium oxide, gallium oxide and tin oxide. The oxide sintered body has a relative density of 90% or more and an average grain size of 10 ?m or less. In the oxide sintered body, the relations 30 atomic %?[In]?50 atomic %, 20 atomic %?[Ga]?30 atomic % and 25 atomic %?[Sn]?45 atomic % are satisfied. [In], [Ga] and [Sn] are ratios of contents (atomic %) of indium gallium and tin, respectively, to all metal elements contained in the oxide sintered body. The oxide sintered body has an InGaO3 phase which satisfies the relation [InGaO3]?0.05.

Abstract: In a semiconductor carrier lifetime measuring apparatus A1 of the present invention, at least two types of light having mutually different wavelengths are irradiated onto a semiconductor X to be measured, a predetermined measurement wave is irradiated onto the semiconductor X to be measured, a reflected wave of the measurement wave that has been reflected by the semiconductor X to be measured or a transmitted wave of the measurement wave that has transmitted through the semiconductor X to be measured is detected, and the carrier lifetime in the semiconductor X to be measured is obtained based on the detection results so as to minimize the error. Accordingly, the semiconductor carrier lifetime measuring apparatus A1 configured as described above can more accurately measure the carrier lifetime.

Abstract: Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.

Abstract: Provided is a sintered body comprising LiCoO2 used for a sputtering target. The area A of a surface of the sintered body that corresponds to a sputtering surface is 200-1500 cm2 and the relative density of the entire sintered body is 75% or higher. When B1 represents the area of a region in which the area ratio that is occupied by pores is 10% or higher in the surface that corresponds to a sputtering surface, the ratio of B1 to the area A is 50% or higher, and the area B2 of a region having a specific resistance of 1.0×102 ?-cm or smaller in the surface that corresponds to a sputtering surface occupies 25% or more of the area A.

Abstract: The invention relates to an Al—Ni—La system Al-based alloy sputtering target where a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 ?m to 3 ?m with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, and a total area of an Al—La system intermetallic compound having an average particle diameter of 0.2 ?m to 2 ?m with respect to a total area of the entire Al—La system intermetallic compound is 70% or more in terms of an area fraction.

Abstract: Provided is an oxide sintered body suitably used for producing an oxide semiconductor film for a display device, the oxide sintered body capable of forming an oxide semiconductor film exerting excellent conductivity, having high relative density and excellent in-plane uniformity, and exhibiting high carrier mobility. This oxide sintered body is obtained by combining and sintering a zinc oxide powder, a tin oxide powder, and an indium oxide powder. The oxide sintered body satisfies the following equation (1) when the oxide sintered body is subjected to X-ray diffraction, Equation (1): [A/(A+B+C+D)]×100?70. In equation (1), A represents the XRD peak intensity in the vicinity of 2?=34°, B represents the XRD peak intensity in the vicinity of 2?=31°, C represents the XRD peak intensity in the vicinity of 2?=35°, and D represents the XRD peak intensity in the vicinity of 2?=26.5°.

Abstract: An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 ?m. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.

Abstract: A contact probe includes a base material, a carbon film provided on a tip of the contact probe and configured to contact with an electrode, and an intermediate layer provided between the carbon film and the base material. The carbon film includes a metal element. A concentration of the metal element in the carbon film surface is lower than an average concentration of the metal element in a whole of the carbon film. The carbon film further includes: a plurality of layers, each of the plurality of layers having a uniform concentration of the metal element along a direction of a thickness of the carbon film; a layer in which the concentration of the metal element is continuously changed along a direction of a thickness of the carbon film; or both thereof.

Abstract: An oxide sintered body is obtained by mixing and sintering a zinc oxide, an indium oxide, a gallium oxide and a tin oxide. The oxide sintered body has a relative density of 85% or more, and has volume ratios satisfying the following expressions (1) to (3), respectively, as determined by X•ray diffractometry: (1) (Zn2SnO4 phase+InGaZnO4 phase)/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3, phase)?75% by volume; (2) Zn2SnO4 phase/(Zn2SnO4 phase+InGaZnO4 phase+In2O3 phase+SnO2 phase+(ZnO)mIn2O3 phase)?30% by volume; and (3) InGaZnO4 phase/(Zn2SnO4 phase+InGaZnO4 phase+In7O3 phase+SnO2 phase+(ZnO)mIn2O3 phase)?10% by volume. and m represents an integer of 2 to 5.

Abstract: This oxide sintered compact is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. As determined by X-ray diffractometry of this oxide sintered compact, the oxide sintered compact has a Zn2SnO4 phase as the main phase and contains an In/In2O3—ZnSnO3 solid solution wherein In and/or In2O3 is solid-solved in ZnSnO3, but a ZnxInyOz phase (wherein x, y and z each represents an arbitrary positive integer) is not detected. Consequently, the present invention was able to provide an oxide sintered compact which is suitable for use in the production of an oxide semiconductor film for display devices and has both high electrical conductivity and high relative density. The oxide sintered compact is capable of forming an oxide semiconductor film that has high carrier mobility.

Abstract: Provided are an oxide sintered body and a sputtering target that are ideal for the production of an oxide semiconductor film for a display device. The oxide sintered body and sputtering target that are provided have both high conductivity and high relative density, are capable of forming an oxide semiconductor film having a high carrier mobility, and in particular, have excellent direct-current discharge stability in that long-term, stable discharge is possible, even when used by the direct-current sputtering method. The oxide sintered body of the invention is an oxide sintered body obtained by mixing and sintering zinc oxide, tin oxide, and an oxide of at least one metal (M metal) selected from the group consisting of Al, Hf, Ni, Si, Ga, In, and Ta. When the in-plane specific resistance and the specific resistance in the direction of depth are approximated by Gaussian distribution, the distribution coefficient ? of the specific resistance is 0.02 or less.