Abstract: A backing plate for sputtering targets contains an aluminum alloy having an average coefficient of linear expansion of 23.0×10?6/° C. or less at temperatures of 25° C. to 100° C. This backing plate prevents warp occurring upon bonding with a target, reduces stress occurring upon film deposition (sputtering) of Al—Nd alloy thin films, saves the flattening process of the warp, is reduced in cracking of a brazing filler metal arranged between the target and the backing plate and thereby enables stable film deposition operation over a long period of time.
Abstract: To reduce warp caused by bonding or film deposition and enable stable film deposition over a long time, an assembly for sputtering Al—Nd alloys includes an Al—Nd alloy sputtering target containing an aluminum alloy having a Nd content of 0.1 to 3 atomic %, and a backing plate brazed to the Al—Nd alloy sputtering target, in which the Al—Nd alloy sputtering target has an average coefficient of linear expansion A at temperatures of 25° C. to 100° C., and the backing plate has an average coefficient of linear expansion B at temperatures of 25° C. to 100° C., and A and B satisfy following Condition (1): ?0.15?(B?A)/A<0.
Abstract: The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi].
Type:
Application
Filed:
May 13, 2004
Publication date:
November 18, 2004
Applicants:
Kabushiki Kaisha Kobe Seiko Sho, KOBELCO RESEARCH INSTITUTE, INC.