Abstract: A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

Abstract: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.

Abstract: A method and apparatus for cleaning a CVD chamber including optoelectronic detection of the completion or endpoint of the cleaning procedure once a ratio of emission lines reaches a threshold value. The method comprises the steps of: providing a plasma of a cleaning gas into the chamber and creating a plasma from the cleaning gas. The intensity of emission lines of the cleaning gas and of at least one background gas in the chamber are monitored. A ratio of the intensity of the cleaning gas emission line to the intensity of the background gas emission line is determined and monitored as a function of time. The determined ratio is compared to a preset threshold calibration value. The flow of gas is controlled based on the comparing step. The apparatus includes a cleaning gas supply with a valved inlet providing an entrance to the interior of the chamber for passing cleaning gas to the interior of the chamber. A detector having an optical input is disposed for sensing the electromagnetic radiation.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: A method and apparatus for cleaning a CVD chamber including optoelectronic detection of the completion or endpoint of the cleaning procedure once a ratio of emission lines reaches a threshold value. The method comprises the steps of: providing a plasma of a cleaning gas into the chamber and creating a plasma from the cleaning gas. The intensity of emission lines of the cleaning gas and of at least one background gas in the chamber are monitored. A ratio of the intensity of the cleaning gas emission line to the intensity of the background gas emission line is determined and monitored as a function of time. The determined ratio is compared to a preset threshold calibration value. The flow of gas is controlled based on the comparing step. The apparatus includes a cleaning gas supply with a valved inlet providing an entrance to the interior of the chamber for passing cleaning gas to the interior of the chamber. A detector having an optical input is disposed for sensing the electromagnetic radiation.

Abstract: The present invention provides an apparatus and method for substrate transport. In systems according to the invention, at least a first and second chamber are provided. The first chamber may be a load lock and the second chamber a processing chamber. A substrate transfer shuttle is provided and is moveable along a linear path defined by guide rollers between one position in the first chamber and another position in the second chamber. In this way, the substrate may be transferred, in both a forward and a reverse direction, between the first chamber and the second chamber. The substrate transfer shuttle is structured so that a substrate may be removed therefrom by moving a support in one of the chambers from a lowered position to an intermediate position, after which the substrate transfer shuttle may be removed from the chamber.

Abstract: A process and apparatus for etching an exposed region of a multi-layer metal having at least two layers: a layer of aluminum or aluminum alloy, and an underlying layer of refractory metal. The etching process includes at least two steps. In a first step, the aluminum layer is etched by processing the substrate with a first plasma chemistry that etches aluminum. Optionally a portion, but not all, of the refractory metal layer also is etched by the first plasma chemistry. In a subsequent second step, the remainder of the refractory metal layer is etched by a second plasma chemistry that etches the lower refractory metal much faster than it etches aluminum. The invention minimizes undercutting of the aluminum side wall as the refractory metal layer becomes depleted.

Abstract: A magnetic drive system for moving a substrate transfer shuttle along a linear path between chambers in a semiconductor fabrication apparatus. A rack with rack magnets is secured to the shuttle, and a rotatable pinion with pinion magnets is positioned adjacent the rack so that the pinion magnets can magnetically engage the rack magnets. Thus, rotation of the pinion will cause the shuttle to move along the linear path. The magnets may be oriented with a helix angle between their primary axis and the axis of rotation of the pinion. One rack and one pinion are located on each side of the shuttle. A set of lower guide rollers supports the shuttle, and a set of upper guide rollers prevents the shuttle from lifting off the lower guide rollers.

Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining a portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: The present invention generally provides a system and method for supporting a substrate having a support frame that minimizes deflection encountered during thermal expansion in a processing chamber. In one embodiment, the support frame comprises one or more longitudinal members coupled to one or more transverse members. The transverse members preferably define a supporting surface on which a heated susceptor is mounted. The longitudinal member is preferably disposed below the heated susceptor, thus minimizing thermal expansion of the longitudinal member. Spacers made of thermally conductive material may be disposed at appropriate locations along the members to provide more uniform distribution of heat within the members.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: The present invention relates generally to a clamping and alignment assembly for a substrate processing system. The clamping and aligning assembly generally includes a shadow frame, a floating plasma shield and a plurality of insulating alignment pins. The shadow frame comprises a plurality of tabs extending inwardly therefrom and is shaped to accommodate a substrate. The tabs comprise protruding contact surfaces for stabilizing a substrate on a support member during processing. The insulating alignment pins are disposed at a perimeter of a movable support member and cooperate with an alignment recess formed in the shadow frame to urge the shadow frame into a desired position. Preferably, the floating plasma shield is disposed on the insulating alignment pins in spaced relationship between the support member and the shadow frame to shield the perimeter of the support member during processing.

Abstract: Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.

Abstract: Isolation valves for selectively sealing a first region from a second region. A gate valve can include a housing which defines a channel between the first and second regions. The valve includes a gate, located in the housing, and displaceable between a stowed position and a deployed position. When the gate is in the stowed position, communication is permitted between the first and second regions. When the gate is in the deployed position, the gate spans the channel and can be controlled to isolate the first and second regions. The valves can be used, for example, in connection with systems for processing large glass substrates. The valves are particularly useful for isolating long rectangular openings, such as the openings in substrate processing chambers. Isolating processing chambers or load lock chambers from one another, for example, in a linear system, is facilitated.

Abstract: A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.

Abstract: A method of transferring and processing a substrate in an evacuable chamber which is located adjacent a process chamber and back-to-back process chambers, and other combinations of evacuable chambers and process chambers. The method includes the use of various isolation valves disposed between adjacent chambers, as well as gas flow valves and vacuum valves. By controlling the positions of the valves, the flow of gas to and from the different chambers can be controlled.

Abstract: A sputter deposition apparatus and method having a sputtering target that is tilted and a shield that intercepts particles that may fall from the target so that the particles do not deposit on the workpiece. The invention permits the workpiece to be oriented horizontally. More specifically, the sputtering target is mounted higher than the workpiece position and is oriented at an angle of 30 to 60 degrees relative to the vertical axis. The shield occupies an area such that any vertical line extending vertically downward from the front surface of the target to a point on the workpiece intersects the shield above said point.