Abstract: An etch method includes providing a material layer consisting essentially of a group member selected from the group consisting of an indium oxide (InO), a tin oxide (SnO), a mixture of indium and tin oxides, a compound of indium and of tin and of oxygen having the general formulation In.sub.x Sn.sub.y O.sub.z where z is substantially greater than zero but less than 100% and where the sum x+y fills the remainder of the 100%, and a mixture of the preceding ones of the group members. A reactive gas including a halogen-containing compound and an oxygen-containing compound is supplied to a vicinity of the material layer. Also, an electric field is supplied to react the supplied reactive gas with the material layer so as to form volatile byproducts of reactive gas and the material layer.

Abstract: An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250.degree. C. and 450.degree. C.

Abstract: A substrate processing system can include an evacuable chamber adjacent a process chamber and back-to-back process chambers, or other combinations of evacuable chambers and process chambers. The processing system includes various isolation valves disposed between adjacent chambers, as well as gas flow valves and vacuum valves. A controller controls the respective positions of the various gas flow valves and vacuum valves depending, in part, on whether the various isolation valves are in their open or sealed positions. By controlling the positions of the valves, the flow of gas to and from the different chambers can be controlled, for example, to help maximize throughput, increase efficiency, and reduce the likelihood of cross-contamination between chambers.

Abstract: A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate. A second flow channel can be oriented to distribute gas to an outer portion of the substrate. With different flow channels, the system and method enable separate control of gas distribution for different portions of the substrate. In particular, the flow channels allow separate control of gas flow rate, concentration, and flow time for different areas of the substrate. In this manner, gas distribution can be selectively controlled to compensate for different etch rates across the substrate surface. Also, gas distribution can be controlled as a function of etch rate patterns exhibited by different etch gasses used in successive process steps.

Abstract: A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.

Abstract: A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.

Abstract: A chamber for etching substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member that is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting apparatus and the support member, and in a retracted position to clamp the substrate to the support member.The chamber is especially adapted to etching substrates requiring high power densities, such as substrates having aluminum films, without causing arcing.

Abstract: A method of etching openings in a dielectric layer of a semiconductor device by utilizing a novel etchant gas system of sulfur hexafluoride/chlorine such that sloped sidewalls can be formed in the openings having a desired taper of between about 20.degree. and about 85.degree. for achieving improved step coverage and profile control of the TFT fabrication process.

Abstract: A plasma applicator including a cylindrically-shaped outer tube; a cylindrically-shaped plasma tube located within and concentric with the outer tube, and having a first end and a second end; a first support located at the first end of the plasma tube; a seal surrounding the plasma tube at its first end, compressed between the plasma tube and the first support, and located at a first distance from the first end of the plasma tube; and a shield extending a second distance into the plasma tube.

Abstract: A method of etching an article having a substrate, an etchable film and a mask layer having a pattern formed therein includes the step of exposing the article to an etchant gas mixture which includes a halogen-containing gas and an inert gas. An etching profile is formed which is substantially smooth across an interface between the etchable film and the mask layer. The method is particularly useful in producing components of articles such as flat-panel displays.

Abstract: A plasma-based generator for use with a power source including a plasma tube having a hollow tube body in which a plasma is generated by the power source; a first support structure supporting a downstream end of the plasma tube; and a second support structure holding an upstream end of the plasma tube, the second support structure connected to the first support structure, the second support structure including an expansion joint which changes its length to accommodate a lengthening and a shortening of the plasma tube due to its thermal expansion and contraction when plasma processing is performed within the plasma tube.

Abstract: The structure and method which improves the film thickness uniformity or thickness control when using magnetron sputtering by adjusting the distance between the magnetron or a portion of the magnetron and the sputtering target to provide an improvement in the film thickness uniformity. Shimmed rails, contoured rails, contoured surfaces, cam plates, and cam plate control followers are utilized to achieve an improvement in film thickness uniformity or thickness control due to anomalies in magnetic field as a magnetron assembly moves back and forth when sputtering substrates (utilized primarily for rectangularly shaped substrates).

Abstract: An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 .ANG./min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C.sub.2 H.sub.5 I) is used alone or in combination with another gas such as O.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.

Abstract: A heated substrate support plate for use in a process chamber. The support plate has grooves disposed therein for receiving heating elements. The heating elements are comprised of an outer sheath, a heater coil and a heat-conducting filler material. The heating element is disposed within a groove and compressed to compact the heat-conducting filler material about the heater coil.

Abstract: A method for cleaning a deposition chamber that is used in fabricating electronic devices including the steps of delivering a precursor gas into a remote chamber that is outside of the deposition chamber, activating the precursor gas in the remote chamber via a high power source to form a reactive species, flowing the reactive species from the remote chamber into the deposition chamber, and using the reactive species that is flowed into the deposition chamber from the remote chamber to clean the inside of the deposition chamber.

Abstract: A chamber for processing substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator is disposed on the chamber wall to move the clamping and lifting assembly between the extended and retracted positions.

Abstract: A method of etching openings in a dielectric layer of a semiconductor device by utilizing a novel etchant gas system of sulfur hexafluoride/chlorine such that sloped sidewalls can be formed in the openings having a desired taper of between about 20.degree. and about 85.degree. for achieving improved step coverage and profile control of the TFT fabrication process.

Abstract: A sensor for measuring the temperature of a workpiece including a substrate, wafer, shield or other element in a semiconductor processing system. In the illustrated embodiment, the sensor has a heat shield to reflect away from the heat sensing element, heat from unwanted sources such as susceptors and heating cartridges which can adversely affect the accuracy of the measurement. In addition, the heat shield preferably has a small thermal mass for improved responsivity.

Abstract: An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 80 .ANG./min is disclosed. Chamber pressure is maintained at least as low as 30 mTorr. A reactive gas that includes a halogen hydride such as HCl is used alone or in combination with another reactive gas such as Cl.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.

Abstract: A multi-step CVD method for thin film transistor is disclosed. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.