Abstract: Automated systems and methods for processing substrates are described. An automated processing system includes: a vacuum chamber; a substrate support located inside the vacuum chamber and constructed and arranged to support a substrate during processing; and a substrate alignment detector constructed and arranged to detect if the substrate is misaligned as the substrate is transferred into the vacuum chamber based upon a change in a physical condition inside the system. The substrate alignment detector may include a vibration detector coupled to the substrate support. A substrate may be transferred into the vacuum chamber. The position of the substrate may be recorded as it is being transferred into the vacuum chamber. Misalignment of the substrate with respect to the substrate support may be detected. The substrate may be processed. The processed substrate may be unloaded from the vacuum chamber. The position of the processed substrate may be recorded as it is being unloaded from the vacuum chamber.

Abstract: A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

Abstract: The invention provides an apparatus and method for performing a process on a substrate. At least two types of structures may be used to provide a flow path for a substrate so that the substrate may be moved from one processing or loading position to another. The first is a conveyor. The second is a track. The flow path may be a closed continuous loop. Each processing island has a valve for introduction and extraction of the substrate into and out of an interior of the island. The processing island may include load locks, and may include in conjunction therewith an inspection station, a CVD chamber, a PECVD chamber, a PVD chamber, a post-anneal chamber, a cleaning chamber, a descumming chamber, an etch chamber, or a combination of such chambers.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: A technique for heating a substrate support, such as a susceptor, includes establishing respective final temperature setpoints for first and second heating elements in the susceptor. The temperatures of the heating elements are raised to their respective final temperature setpoints based on a predetermined heating rate. The temperatures of the first and second heating elements are controlled so that the difference between the temperatures of the first and second heating elements does not exceed the predetermined value while the temperatures of the heating elements are raised to their respective final temperature setpoints. Controlling the temperatures includes setting interim setpoints for the first and second heating elements, where the interim setpoint for the heating element having the greater heating capacity depends on the current value of the interim setpoint of the other heating element and the predetermined value.

Abstract: A substrate handling apparatus includes a transfer arm having a substrate support. The apparatus includes at least one image acquisition sensor configured to acquire images of a substrate supported by the substrate support. In addition, the apparatus includes a controller coupled to the image acquisition sensor and configured to control the image acquisition sensor to acquire at least one image of the substrate supported on the substrate support. The controller is further configured to receive the images acquired by the image acquisition sensor and to determine an initial position of the substrate based on the acquired images. The controller is further coupled to the substrate support to control movement thereof to move the substrate to a new position based on the substrate's initial position. The apparatus also can be used to determine a substrate identification and to detect certain substrate defects either before or after processing the substrate in a thermal processing chamber.

Abstract: The present invention allows large glass substrates to be rapidly moved from one processing station to another. Such movement occurs such that drives in different chambers are synchronized to move the glass substrates on shuttles at appropriate times. In systems according to the invention, at least a first and second chamber are provided. Typically, the first chamber is a load lock and the second chamber is a processing chamber. A substrate transfer shuttle is used to move substrate along a guide path defined by, e.g., guide rollers. Drive mechanisms are employed for most chambers to drive the shuttle along associated portions of the path. A control system is provided which powers the drive mechanism for the first chamber to drive the substrate transfer shuttle from a first position toward a second position and through an intermediate position. At the intermediate position, the substrate transfer shuttle begins to engage and induce movement of the drive mechanism for the second chamber.

Abstract: A magnetic drive system for moving a substrate transfer shuttle along a linear path between chambers in a semiconductor fabrication apparatus. A rack with rack magnets is secured to the shuttle, and a rotatable pinion with pinion magnets is positioned adjacent the rack so that the pinion magnets can magnetically engage the rack magnets. Thus, rotation of the pinion will cause the shuttle to move along the linear path. The magnets may be oriented with a helix angle between their primary axis and the axis of rotation of the pinion. One rack and one pinion are located on each side of the shuttle. A set of lower guide rollers supports the shuttle, and a set of upper guide rollers prevents the shuttle from lifting off the lower guide rollers.

Abstract: Automated systems and methods for processing substrates are described. An automated processing system includes: a vacuum chamber; a substrate support located inside the vacuum chamber and constructed and arranged to support a substrate during processing; and a substrate alignment detector constructed and arranged to detect if the substrate is misaligned as the substrate is transferred into the vacuum chamber based upon a change in a physical condition inside the system. The substrate alignment detector may include a vibration detector coupled to the substrate support. A substrate may be transferred into the vacuum chamber. The position of the substrate may be recorded as it is being transferred into the vacuum chamber. Misalignment of the substrate with respect to the substrate support may be detected. The substrate may be processed. The processed substrate may be unloaded from the vacuum chamber. The position of the processed substrate may be recorded as it is being unloaded from the vacuum chamber.

Abstract: Apparatus and methods for producing a plasma in a plasma chamber are described. One embodiment includes two or more sources of magnetic flux, each of which defines a single magnetic pole adjacent to a plasma chamber window. Each magnetic flux source is laterally spaced apart from any other magnetic flux source so that, during operation of the plasma source, plasma generation in regions of the plasma chamber immediately adjacent to the magnetic flux sources is substantially greater than plasma generation in regions of the plasma chamber located between the two or more sources. Another embodiment includes an antenna positioned adjacent to the plasma chamber window, and a ferromagnetic core positioned adjacent to the antenna. The ferromagnetic core is configured to concentrate magnetic flux in the vicinity of the antenna through the plasma chamber window and into the plasma chamber.

Abstract: Fabrication techniques for an integrated sputtering target assembly include pressure assisted bonding of soldered layers of material, in particular, soldering of the target material to its backing plate; pressure assisted curing of structural adhesives used to join a finned cover plate to a backing plate which between them form passages for fluid cooling; and bonding an electrical insulating layer to the back surface of the backing plate. The pressure to assist in bonding is typically applied by an autoclave. The cooling fluid passages disposed between a cover and a finned backing plate can be sealed by using laser welding or electron beam welding rather than closing the cooling passages with structural adhesives.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.

Abstract: A substrate processing system includes a processing chamber and a plasma source located external to the chamber. A conduit connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head, disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

Abstract: The present invention provides an apparatus and method for sequential deposition of regular series of layers on consecutive substrates in a modular assembly-line like system. The apparatus and method are especially used processing large glass or metal substrates such as are employed in solar panels. The apparatus includes a load lock chamber and a processing chamber coupled to the load lock chamber. Both the load lock chamber and the processing chamber include a platen to support the substrate. Each platen includes slots therein. A substrate transfer shuttle is provided which is moveable along a shuttle path between one position in the load lock chamber and another position in the processing chamber for transferring the substrate between the load lock chamber and the processing chamber. The shuttle may be moved below the level of the platen and may be maintained in the processing chamber during processing.

Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

Abstract: The present invention generally provides a system and method for supporting a substrate having a support frame that minimizes deflection encountered during thermal expansion in a processing chamber. In one embodiment, the support frame comprises one or more longitudinal members coupled to one or more transverse members. The transverse members preferably define a supporting surface on which a heated susceptor is mounted. The longitudinal member is preferably disposed below the heated susceptor, thus minimizing thermal expansion of the longitudinal member. Spacers made of thermally conductive material may be disposed at appropriate locations along the members to provide more uniform distribution of heat within the members.

Abstract: A load lock chamber includes a chamber body having an aperture to allow a substrate to be transferred into or out of the chamber. The load lock chamber is configurable in several configurations, including a base configuration for providing a transition between two different pressures, a heating configuration for heating the substrate and providing a transition between two different pressures, and a cooling configuration for cooling the substrate and providing a transition between two different pressures. Various features of the chamber configurations help increase the throughput of the system by enabling rapid heating and cooling of substrates and simultaneous evacuation and venting of the chamber, and help compensate for thermal losses near the substrate edges, thereby providing a more uniform temperature across the substrate.

Abstract: Isolation valves for selectively sealing a first region from a second region. A gate valve can include a housing which defines a channel between the first and second regions. The valve includes a gate, located in the housing, and displaceable between a stowed position and a deployed position. When the gate is in the stowed position, communication is permitted between the first and second regions. When the gate is in the deployed position, the gate spans the channel and can be controlled to isolate the first and second regions. The valves can be used, for example, in connection with systems for processing large glass substrates. The valves are particularly useful for isolating long rectangular openings, such as the openings in substrate processing chambers. Isolating processing chambers or load lock chambers from one another, for example, in a linear system, is facilitated.

Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.