Abstract: A shield in a PVD vacuum processing chamber having a configuration which minimizes or eliminates particulates originating from flaking or peeling off from the shield and from arcing between the biased target and surrounding grounded pieces is disclosed. The shield has an "h" cross section with the lower arch of the "h" facing a heater assembly which heats the shield to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield is polished to promote the release of H.sub.2 O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield (facing a heater assembly) is treated to have a higher coefficient of surface emissivity than the outer surface to retain more energy and provide more efficient heating.
Type:
Grant
Filed:
September 8, 1994
Date of Patent:
May 21, 1996
Assignee:
Applied Komatsu Technology, Inc.
Inventors:
Akihiro Hosokawa, Richard E. Demaray, David E. Berkstresser