Abstract: An instrument panel including at least one instrument indicator positioned in the panel. At least one active display is positioned in the panel and is capable of displaying images from data provided to the display.

Abstract: A headgear system which includes headgear with an upper headgear portion for being worn on a user's head. A lower headgear portion extends forwardly relative to a lower front portion of the user's head and below the user's eyes. A display assembly is mounted to the lower headgear portion for being located below at least one of the user's eyes so as not to obstruct the user's vision. The display assembly has a display that is visible when the at least one of the user's eyes looks downwardly. The display assembly is configured to be adjustable by the user while the headgear system is worn by the user for changing the orientation of the display for suitable viewing.

Abstract: Various embodiments of a head-mountable display system can be adapted to allow users to see through or above or below the display assembly. Such range of vision can be achieved by positioning the display assembly into display pods housed in clear plastic; forming the frame into an “S”-shape positioned on the bridge of the nose so as to allow the user to see over it; positioning retractable display pods into a hard support frame, or other means. Various parts of the head-mountable display system, such as temple arms, ear phones, display assembly, and the head band, can be modified so as to achieve ergonomically optimal solution.

Abstract: A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.

Abstract: An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

Abstract: A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal display or a light emitting display.

Abstract: A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

Abstract: The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body. TFT's activate display electrodes formed adjacent the transistors after the tiles have been transferred.

Abstract: A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

Abstract: A camera display system displays information via a matrix display element mounted within a housing that is positioned relative to at least eye of a user. The display is connected to a video or image sensor such that the user can view information or images shown on the display. The display can be mounted to a housing so that the user can move the display in and out of the user's field of view.

Abstract: The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a viewfinder in a electronic image record system such as a digital camera or video camera. The matrix display can be transmissive or reflective using sequential lighting. The system can use an alternating common voltage which allows reduced power consumption. In addition an internal heating system in the display allows the system to be used at low temperatures.

Abstract: High-efficiency light-emitting diode structures are disclosed which reduce the current flow directly underneath the thick p-bonding pad. The devices can further include a light-reflecting layer at the back of the substrate.

Abstract: A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

Abstract: An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

Abstract: Light-emitting diodes (LEDs) have at least one light-emitting surface that is patterned, thereby improving the ratio of internal to external efficiency. In one embodiment, the light-emitting diodes are gallium nitride based group III-V diodes that have a multiple quantum-well active region between an n-doped GaN layer and a p-doped GaN layer. The n-doped GaN layer has a surface that is patterned.

Abstract: A color sequential display operative in one of two alternate modes. The first mode is a color sequential mode in which primary color images are displayed in successive frames while respective background light sources are simultaneously flashed on the display. The second mode is a monochrome mode in which the luminance Y signal is displayed in successive frames along with flashes of background white light.

Abstract: The resistivity of a p-doped III-V or a p-doped II-VI semiconductor material is reduced. The reduction of resistivity of the p-type III-V or a II-VI semiconductor material is achieved by applying an electric field to the semiconductor material. III-V nitride-based light emitting diodes are prepared.

Abstract: A head mounted display system including a high resolution active matrix display which reduces center of gravity offset in a compact design. The active matrix display can be either a liquid crystal display or a light emitting display.

Abstract: The invention relates to device processing, packaging and interconnects that will yield integrated electronic circuitry of higher density and complexity than can be obtained by using conventional multi-chip modules. Processes include the formation of complex multi-function circuitry on common module substrates using circuit tiles of silicon thin-films which are transferred, interconnected and packaged. Circuit modules using integrated transfer/interconnect processes compatible with extremely high density and complexity provide large-area active-matrix displays with on-board drivers and logic in a complete glass-based modules. Other applications are contemplated, such as, displays, microprocessor and memory devices, and communication circuits with optical input and output.

Abstract: A multi-layered structure is fabricated in which a microprocessor is configured in different layers and interconnected vertically through insulating layers which separate each circuit layer of the structure. Each circuit layer can be fabricated in a separate wafer or thin film material and then transferred onto the layered structure and interconnected.