Abstract: A camera flash lens for a plurality of light emitting diodes (LEDs) mounted on a board and serving as a light source of a camera flash, includes a plurality of annular lenses corresponding to the plurality of LEDs, respectively. The plurality of annular lenses each include an edge portion extending toward the board to reflect and collect light emitted from the edge of a corresponding LED of the plurality of LEDs, and a central portion having an inner surface with a Fresnel shape or a curved shape to collect light emitted from the top of the corresponding LED.

Abstract: Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.

Abstract: Provided is a photoluminescence liquid crystal display (LCD) using a light source emitting polarized light. The photoluminescence LCD may include a light source emitting polarized light, a light control unit including a liquid crystal layer having a plurality of pixel regions and modulating a polarization direction of the polarized light individually with respect to each of the pixel regions, a polarizer transmitting the modulated light only when the polarized light has a polarization direction, and a photoluminescence layer excited by the light transmitted through the polarizer and emitting excitation light by photoluminescence. Accordingly, an additional polarizer may not be on a rear surface of the light control unit, so that photoluminescence LCD may have a simpler structure and increased light use efficiency.

Abstract: A lighting device comprising two or more solid state light emitters which emit light in the range of 430 nm to 480 nm and one or more lumiphors which emit light in the range of 555 nm to 585 nm. Also, a lighting device comprising two or more solid state light emitters. The lighting devices make a mixture of light which in the absence of any other light would be within an area defined by coordinates (0.32, 0.40), (0.36, 0.48), (0.43, 0.45), (0.42, 0.42), and (0.36, 0.38). The lighting device may further comprise one or more 600 nm to 630 nm light emitters, and the lighting device may emit light within ten MacAdam ellipses of the blackbody locus. Also, packaged solid state light emitters and methods of lighting.

Abstract: A mounting means is provided for mounting a device comprising at least one mounting shield, a pivot bearing arranged in the mounting shield and a rotor mounted perpendicularly in the pivot bearing, an axis of rotation of the rotor being oriented substantially perpendicularly when the device is mounted on the mounting means, and the mounting means having resilient properties. In one embodiment, the resilient properties of the mounting means are direction-dependent, in particular orthotropic. As a consequence of the direction-dependent resilient properties of the mounting means, oscillations excited by a rotary movement of the rotor strike a mounting, the pivot point of which does not coincide with the axis of rotation of the rotor, but is set apart therefrom. This makes it much more difficult to excite the mounting means to form unstable oscillations, so that such oscillations are effectively damped.

Abstract: A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.

Abstract: The present invention relates to an LED module for illumination, and more particularly, to an LED module for illumination capable of enhancing light emitting efficiency by having a light emitting structure, in which the thickness of an insulation substrate with an electrode pattern formed on a top portion thereof is minimized, a heat radiation substrate is formed by integrally attaching a radiator to a bottom surface of the insulation substrate, and LED elements are attached to the electrode pattern of the heat radiation substrate through silver epoxy with excellent heat conductivity as an adhesive agent, so that heat generated from the LED elements can effectively radiate through the radiator, white light is effectively generated from the light emitted from the LED elements, and the white light can be emitted to the outside maximally.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting structure including first and second conductivity type semiconductor layers, and an active layer disposed therebetween, first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively, and a fine pattern for light extraction, formed on a light emitting surface from which light generated from the active layer is emitted. The fine pattern for light extraction is formed as a graded refractive index layer having a refractive index which decreases with vertical distance from the light emitting surface.

Abstract: A solid state emitter package includes a principally red solid state emitter having peak emissions within 590 nm to 680 nm, a principally blue solid state emitter having peak emissions within 400 nm to 480 nm, and at least one of a common leadframe, common substrate, and common reflector, with the package being devoid of any principally green solid state emitters having peak emissions between 510 nm and 575 nm. A solid state emitter package may include at least one electrically conductive path associated with the solid state emitter package that is not in electrical communication with any solid state emitter of the solid state emitter package, with such electrically conductive path being susceptible to inclusion of a jumper or a control element.

Abstract: A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device.

Abstract: Remodeling of body tissue using a bioabsorbable implant that maintains or otherwise mechanically assists a more permanent implant or other treatment take, for example, by the treatment causing fibrosis. For example, the apparatus and methods can be used for hernia, organ prolapse and cosmetic purposes, such as breast and face lifts.

Abstract: An incubation and dry storage apparatus, especially for samples made of organic material, is provided.

Abstract: Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.

Abstract: First, second and third lighting devices each comprise a thermal conduction element, solid state light emitters and a reflective element. In the second device, the conduction element defines an opening; and the emitters and reflective element are mounted on a first side of the conduction element. In the third device, the conduction element defines an opening; a first portion of a first side of the conduction element is in contact with a contact region of a construction surface; and the emitters and reflective element are mounted on the first side. A fourth device comprises a conduction element and emitters; a first portion of a first side of the conduction element is in contact with a contact region of a construction surface; the emitters are mounted on a second portion of the first side of the conduction element; and a second side of the conduction element is exposed to ambient air.

Abstract: A LED epitaxial-Chip with patterned GaN based substrate is provided. The LED epitaxial-Chip includes a substrate, a butter layer formed on the substrate, unintentional doped intrinsic GaN layer formed on the substrate, n-GaN layer formed on the substrate, InGaN active layer formed on the substrate, multiple quantum well formed on the substrate; and p-GaN layer formed on the sapphire substrate. The substrate has DBR reflection layer formed thereon. The DBR reflection layer is layered structure grown by two materials having different refractive index periodically alternate. The reflection layer forms at least two spaced patterned structures on the substrate. A manufacturing method of LED epitaxial-Chip with patterned GaN based substrate is also provided.

Abstract: A lighting device comprises a solid state light emitter, first and second electrodes connected to the emitter, an encapsulant region comprising a silicone compound and a supporting region. The encapsulant region extends to an external surface of the lighting device. At least a portion of the first electrode is surrounded by the supporting region. The encapsulant region and the supporting region together define an outer surface which substantially encompasses the emitter. A method of making a lighting device, comprises electrically connecting first and second electrodes to an emitter; inserting the emitter into mold cavity; inserting an encapsulant composition comprising a one silicone compound; and then inserting a second composition to substantially surround at least a portion of the first electrode.

Abstract: A highly reliable, high voltage AC/DC LED device with integrated protection mechanism is disclosed. The protection element can be a current-limiting resistor, monolithically integrated on LED chip, or a discrete resistor assembled in the lamp package or submount. The protection elements may also include other parts integrated on a submount.

Abstract: There is provided a lighting device, comprising at least one light emitter, at least one reflector and at least one sensor. The sensor is positioned within a region which receives direct light from the light emitter when the light emitter is emitting light. In some embodiments, the light emitter comprises one or more light emitting diode. In some embodiments, the sensor is positioned between the light emitter and a power supply. In some embodiments, the reflector comprises at least one opening, and light emitted by the light emitter passes through the opening to the sensor. In some embodiments, the sensor is sensitive to only some wavelengths of visible light. Some embodiments are back-reflecting lamps, and some are forward-reflecting lamps.